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7622772 Electronic apparatuses, silicon-on-insulator integrated circuits, and fabrication methods  
An electronic apparatus includes an insulative substrate containing an aluminum-based glass and a layer containing a semiconductive material over the substrate. The insulative substrate can include...
7527704 Method for preparing film structure comprising ferroelectric single crystal layer  
A film structure of a ferroelectric single crystal which can be beneficially used in the fabrication of high-performance electric or electronic parts or devices is prepared by adhering a...
7492009 Semiconductor device having silicon on insulator structure and method of fabricating the same  
A semiconductor device capable of making an effective use of a support substrate as interconnect is proposed. The semiconductor device (chip 4 ) of the present invention has a first Si substrate ...
7479696 Integrated BST microwave tunable devices fabricated on SOI substrate  
A tunable microwave device includes a SOI structure. A buffer layer is formed on the SOI structure. A microwave film layer is formed on the buffer layer. The microwave film layer comprises BST...
7423324 Double-gate MOS transistor, double-gate CMOS transistor, and method for manufacturing the same  
In a double-gate MOS transistor, a substrate, an insulating layer, and a semiconductor layer are formed or laminated in that order, an opening extending to the insulating layer is formed in the...
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device  
An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example,...
7382015 Semiconductor device including an element isolation portion having a recess  
A non-volatile semiconductor memory device, which is intended to prevent data destruction by movements of electric charges between floating gates and thereby improve the reliability, includes...
7327008 Structure and method for mixed-substrate SIMOX technology  
The present invention provides a semiconductor structure that includes a substrate having a crystal lattice; a first structure formed in a first region of the substrate, the first structure...
7315064 Bonded wafer and method of producing bonded wafer  
The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane...
7291894 Vertical charge control semiconductor device with low output capacitance  
In accordance with an embodiment of the present invention, a MOSFET includes at least two insulation-filled trench regions laterally spaced in a first semiconductor region to form a drift region...
7285825 Element formation substrate for forming semiconductor device  
A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major...
7259428 Semiconductor device using SOI structure having a triple-well region  
A semiconductor device includes a support substrate, a buried insulation film, provided on the support substrate, having a thickness of 5 to 10 nm, a silicon layer provided on the buried insulation...
7247908 Method of fabricating a FinFET  
A FinFET structure and method of forming a FinFET device. The method includes: (a) providing a semiconductor substrate, (b) forming a dielectric layer on a top surface of the substrate; (c) forming...
7244990 Semiconductor device  
On an SOI substrate, a hydrogen ion implantation section in which distribution of hydrogen ions peaks in a BOX layer (buried oxide film layer), and a single-crystal silicon thin-film transistor are...
7183585 Semiconductor device and a method for the manufacture thereof  
To provide a semiconductor device that excels in the manufacturing efficiency and device reliability, and a method for the manufacture thereof. The side of a device is composed of scribed grooves ...
7180109 Field effect transistor and method of fabrication  
The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed...
7170109 Heterojunction semiconductor device with element isolation structure  
A technique enabling to improve element isolation characteristic of a semiconductor device is provided. An element isolation structure is provided in a semiconductor substrate in which a silicon...
7166894 Schottky power diode with SiCOI substrate and process for making such diode  
The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide ( 16 ) insulated from a solid carrier ( 12 ) by a buried layer of...
7148543 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions  
A semiconductor chip includes a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base substrate...
7109551 Semiconductor device  
A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and...
7075151 Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the same  
A semiconductor memory device comprises a substrate; a first semiconductor layer of a first conduction type having a single crystalline structure isolated from the substrate by an insulator layer;...
6995447 Silicon on insulator device having trench isolation layer and method for manufacturing the same  
A silicon-on-insulator (SOI) device and a method for manufacturing the same includes a substrate, which includes a base layer, a buried oxide layer, and a semiconductor layer, and an isolation...
6967376 Divot reduction in SIMOX layers  
A method of fabricating a silicon-on-insulator (SOI) having a superficial Si-containing layer that has a reduced number of tile and divot defects is provided. The method includes the steps of:...
6965149 Epitaxial semiconductor wafer and a manufacturing method thereof  
An epitaxial semiconductor wafer having a wafer substrate made of semiconductor single crystal, an epitaxial layer deposited on a top surface of said wafer substrate and a polysilicon layer...
6965147 Semiconductor device including transistors formed in semiconductor layer having single-crystal structure isolated from substrate  
A semiconductor device includes a substrate, a semiconductor layer of a first conductivity type having a single-crystal structure, and a plurality of transistors each including a first gate...
6958516 Discriminative SOI with oxide holes underneath DC source/drain  
A selective SOI structure having body contacts for all the devices while excluding the buried oxide that is directly underneath diffusions of DC nodes such as applied voltage Vdd, ground GND,...
6933586 Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens  
An electrical interconnect structure on a substrate, includes a first porous dielectric layer with surface region from which a porogen has been removed; and an etch stop layer disposed upon the...
6852585 Semiconductor circuit arrangement and a method for producing same  
A semiconductor circuit arrangement includes a circuit element embedded in a semiconductor substrate of a first conductivity type in an integrated manner and is provided with at least one gate...
6847092 Microelectronic capacitor structure with radial current flow  
A capacitor for a semiconductor device and a method of manufacturing a capacitor for a semiconductor device is disclosed that uses radial current flow. The capacitor includes a semiconductor...
6835981 Semiconductor chip which combines bulk and SOI regions and separates same with plural isolation regions  
A semiconductor chip comprises a base substrate, a bulk device region having a bulk growth layer on a part of the base substrate, an SOI device region having a buried insulator on the base...
6798037 Isolation trench structure for integrated devices  
An integrated device having a substrate wherein a buried layer and an epitaxial region have been formed, and an isolation structure adapted to define a plurality of isolation wells for integrating...
6717214 SOI-LDMOS device with integral voltage sense electrodes  
The present invention provides a semiconductor device of the SOI-LDMOS type in which the field plate is divided into a plurality of electrically isolated sub-field plates. At least two of the...
6703679 Low-resistivity microelectromechanical structures with co-fabricated integrated circuit  
A microfabricated device includes a substrate having a device layer and substantially filled, isolating trenches; a doped region of material formed by photolithographically defining a region for...
6661076 Semiconductor device  
A semiconductor device in which the potential of a conductive support substrate can be kept to be a predetermined potential, while an SOI substrate is used as a chip substrate, without adding a new...
6583489 Method for forming interconnect structure with low dielectric constant  
The present invention provides a method for forming low dielectric constant inter-metal dielectric layer. The method comprises providing a semiconductor substrate and forming a first dielectric...
6552407 Communication module having a structure for reducing crosstalk  
Disclosed herein is a communication module, comprising a semiconductor chip in which channels for allowing signal converting means to convert current signals inputted from input terminals to...
6541861 Semiconductor device manufacturing method including forming step of SOI structure and semiconductor device having SOI structure  
A semiconductor manufacturing method has the steps of preparing an SOI substrate having a supporting substrate, an insulating film formed above the supporting substrate, a semiconductor region...
6489654 Silicon-on-insulator (SOI) substrate  
There is provided a method of fabricating a silicon-on-insulator substrate, including the steps of (a) forming a silicon substrate at a surface thereof with an oxygen-containing region containing...
6469361 Semiconductor wafer  
Techniques for etching a wafer layer using multiple layers of the same photoresistant material and structures formed using such techniques are provided. In a method, first, multiple layers of the...
6455894 Semiconductor device, method of manufacturing the same and method of arranging dummy region  
Provided are a semiconductor device capable of satisfactorily solving a floating-body problem and a hot carrier problem which often arise in an SOI device and of causing a widely distributed...
6448614 Circuit-incorporating photosensitive device  
A circuit-incorporating photosensitive device comprising: an SOI wafer including a first silicon substrate, a second silicon substrate, and an oxide film; a photodiode formed in a first region of...
6445055 Semiconductor integrated circuit device and manufacturing method thereof  
A circuit region 2 on a main surface of an SOI substrate, and a isolating region 9 b defined by insulating isolation trenches 4 a and 4 b are connected by a wiring resistor, or a diffused...
6429486 Semiconductor support substrate potential fixing structure for SOI semiconductor device  
A semiconductor device of a SOI (silicon on insulator) structure includes a P-type silicon support substrate, a first insulating layer formed on the semiconductor support substrate, and an SOI...
6424017 Silicon-on-sapphire transducer  
A method for making silicon-on-sapphire transducers including the steps of forming a first silicon layer on a first side of a first sapphire wafer; bonding a second sapphire wafer to the first side...
6339243 High voltage device and method for fabricating the same  
The disclosed high voltage device includes a semiconductor substrate, and a first semiconductor layer formed between an underlying first insulating layer and an overlying second insulating layer...
6218685 Semiconductor device and method for fabricating the same  
A semiconductor device includes two or more semiconductor elements provided on a semi-insulating substrate with a buffer layer and an interlevel film being interposed therebetween, an element...
6111304 Semiconductor diffused resistor and method for manufacturing the same  
According to the present invention, a semiconductor device, and method for producing the same, is provided comprising: a resistance component formed in a component active region enclosed by a...
6051874 Diode formed in a surface silicon layer on an SOI substrate  
A diode is formed by forming a PN junction region 6 with a p region 5 formed on a buried oxide film 19 side and an n region 7 formed on the surface side in a surface silicon layer 3 which is...
5977606 Dielectric isolated high voltage semiconductor device  
A dielectric isolated high voltage semiconductor device having an arrangement for extending a depletion layer of a main junction beyond an insulating layer containing an island to a semiconductor...
5920093 SOI FET having gate sub-regions conforming to t-shape  
A semiconductor device (120) is formed in a silicon-on-insulator (SOI) substrate (135). The semiconductor device (120) has a channel region (126) that is controlled by a gate structure (129). The...
Matches 1 - 50 out of 112 1 2 3 >