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8183552 |
Semiconductor memory device
A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a...
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8173987 |
Integrated circuit 3D phase change memory array and manufacturing method
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements...
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8173486 |
Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
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8168538 |
Buried silicide structure and method for making
Methods for manufacturing buried silicide lines are described herein, along with high density stacked memory structures. A method for manufacturing an integrated circuit as described herein...
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8164081 |
Memory devices and formation methods
A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a...
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8158967 |
Integrated memory arrays
Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed...
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8154005 |
Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. Two-terminal devices such as passive element memory cells...
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8154004 |
Hybrid MRAM array structure and operation
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
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8154006 |
Controlling the circuitry and memory array relative height in a phase change memory feol process flow
A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic...
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8148708 |
Resistive memory device and method of fabricating the same
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a...
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8148711 |
Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the...
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8148707 |
Ovonic threshold switch film composition for TSLAGS material
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
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8143612 |
Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
An array of “mushroom” style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on the separation layer and forming an arr...
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8143611 |
Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer,...
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8143610 |
Semiconductor phase-change memory device
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion...
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8138574 |
PCM with poly-emitter BJT access devices
A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction...
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8139393 |
Method and apparatus for non-volatile multi-bit memory
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material...
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8138489 |
Non-volatile semiconductor storage device and method of manufacturing the same
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements...
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8129709 |
Nonvolatile memory device
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select...
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8129707 |
Semiconductor integrated circuit device
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a...
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8129708 |
Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same
A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a...
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8124950 |
Concentric phase change memory element
A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase...
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8125011 |
Vertical cell edge junction magnetoelectronic device family
Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element....
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8124951 |
Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof
A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction...
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8125021 |
Non-volatile memory devices including variable resistance material
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
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8120003 |
Nanowire magnetic random access memory
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
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8120005 |
Phase change memory devices and their methods of fabrication
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
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8120004 |
Storage node, phase change memory device and methods of operating and fabricating the same
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
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8113437 |
RFID device with memory unit having memristor characteristics
An RFID device may ensure a stable sensing margin by employing a ReRAM. In an embodiment the RFID includes: a radio signal transceiver configured to transmit/receive a radio signal to/from an...
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8115282 |
Memory cell device and method of manufacture
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material...
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8115188 |
Memory element and display device
Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in...
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8101936 |
SnSe-based limited reprogrammable cell
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first...
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8101937 |
Multistate nonvolatile memory elements
Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable...
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8097871 |
Low operational current phase change memory structures
Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational...
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8097875 |
Semiconductor memory device
A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween,...
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8093576 |
Chemical-mechanical polish termination layer to build electrical device isolation
A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned...
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8093578 |
Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element
The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured...
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8093577 |
Three-dimensional phase-change memory array
A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first...
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8093575 |
Memristive device with a bi-metallic electrode
A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and...
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8084762 |
Resistive memory
A memory device includes an array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure comprising a first signal electrode, a second signal...
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8084760 |
Ring-shaped electrode and manufacturing method for same
An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as...
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8080817 |
Memory cells
In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing...
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8076664 |
Phase change memory with layered insulator
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating...
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8071396 |
Embedded phase-change memory and method of fabricating the same
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and...
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8071969 |
Semiconductor memory device and method for manufacturing same
A semiconductor memory device includes a word line interconnect layer having a plurality of word lines extending in a word line direction and a bit line interconnect layer having a plurality of bit...
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8071972 |
Silicon based nanoscale crossbar memory
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second...
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8071456 |
Semiconductor device and method of manufacturing the same
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film...
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8071968 |
Phase change memory device and method for manufacturing the same
A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements,...
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8067761 |
Self-aligned memory cells and method for forming
The invention provides a memory cell based on variable resistance material memory element that includes an access device having a pillar structure that may also include a protective sidewall layer....
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8062923 |
Thin film fuse phase change cell with thermal isolation pad and manufacturing method
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating...
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