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7622731 Cross-point memory array  
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first...
7619311 Memory cell device with coplanar electrode surface and method  
A memory device described herein includes a bit line having a top surface and a plurality of vias. The device includes a plurality of first electrodes each having top surfaces coplanar with the top...
7619237 Programmable resistive memory cell with self-forming gap  
A memory device has a first electrode, a second electrode, and memory material defining an inter-electrode current path between the first electrode and the second electrode. A gap is formed by...
7615771 Memory array having memory cells formed from metallic material  
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
7615769 Nonvolatile memory device and fabrication method thereof  
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM...
7612358 Nonvolatile nanochannel memory device using mesoporous material  
A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer...
7608851 Switch array circuit and system using programmable via structures with phase change materials  
A programmable via structure that includes at least two phase change material vias each directly contacting a heating element, the via structure further including a first terminal in contact with a...
7608850 Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same  
A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source...
7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method  
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch...
7589344 Semiconductor device and method of producing the same  
In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely...
7582890 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof  
Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel...
7579615 Access transistor for memory device  
An access transistor for a resistance variable memory element and methods of forming the same are provided. The access transistor has first and second source/drain regions and a channel region...
7579614 Magnetic random access memory  
A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer...
7579613 Thin film fuse phase change RAM and manufacturing method  
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating...
7577024 Streaming mode programming in phase change memories  
A streaming programming mode may be implemented on user command in a phase change memory. In the streaming programming mode, accelerated programming may be achieved by ramping up to a voltage that...
7573058 Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories  
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change...
7569846 Phase-change memory device including nanowires and method of manufacturing the same  
A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the...
7569844 Memory cell sidewall contacting side electrode  
A memory cell includes a memory cell layer over a memory cell access layer. The memory cell access layer comprises a bottom electrode. The memory cell layer comprises a dielectric layer and a side...
7566895 Phase change memory device and method for fabricating the same  
A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and...
7560724 Storage device with reversible resistance change elements  
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having...
7560723 Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication  
A resistance variable memory cell and method of forming the same. The memory cell includes a first electrode and at least one layer of resistance variable material in contact with the first...
7551476 Resistive memory having shunted memory cells  
A memory includes a bit line and a plurality of resistive memory cells coupled to the bit line. Each resistive memory cell is programmable to each of at least three resistance states. The memory...
7551473 Programmable resistive memory with diode structure  
Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are...
7550756 Semiconductor memory  
In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an...
7547906 Multi-functional chalcogenide electronic devices having gain  
Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of...
7541607 Electrically rewritable non-volatile memory element and method of manufacturing the same  
A non-volatile memory element includes a bottom electrode 12 , a bit line 14 provided on the bottom electrode 12 , and a recording layer 15 containing phase change material connected between...
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array  
A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper...
7531824 High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate  
An apparatus and method for fabricating high value inductors embedded on semiconductor integrated circuit. The apparatus and method involve forming a conductor on the semiconductor substrate. Once...
7528402 Electrically rewritable non-volatile memory element  
A non-volatile semiconductor memory device includes a plurality of lower electrodes arranged in a matrix manner, a plurality of recording layer patterns, each being arranged on the lower electrode,...
7525117 Chalcogenide devices and materials having reduced germanium or telluruim content  
A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid...
7521705 Reproducible resistance variable insulating memory devices having a shaped bottom electrode  
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at...
7521704 Memory device using multi-layer with a graded resistance change  
A memory device using a multi-layer with a graded resistance change is provided. The memory device includes: a lower electrode; a data storage layer being located on the lower electrode and having...
7521372 Method of fabrication of phase-change memory  
A phase-change memory and fabrication method thereof. The phase-change memory comprises a transistor, and a phase-change material layer. In particular, the phase-change material layer is directly...
7514705 Phase change memory cell with limited switchable volume  
A memory cell comprises a dielectric layer and a phase change material. The dielectric layer defines a trench having both a wide portion and a narrow portion. The narrow portion is substantially...
7511294 Resistive memory element with shortened erase time  
A resistive memory element for reversibly switching between a high-resistance OFF state and a low-resistance ON state includes a reactive electrode, an inert electrode and a solid electrolyte...
7491963 Non-volatile memory structure  
A non-volatile memory cell utilizes a programmable conductor random access memory (PCRAM) structure instead of a polysilicon layer for a floating gate. Instead of storing or removing electrons from...
7491962 Resistance variable memory device with nanoparticle electrode and method of fabrication  
A chalcogenide-based programmable conductor memory device and method of forming the device, wherein a nanoparticle is provided between an electrode and a chalcogenide glass region. The method of...
7488968 Multilevel phase change memory  
A multilevel phase change memory may be formed of a chalcogenide material formed between a pair of spaced electrodes. The cross-sectional area of the chalcogenide material may decrease as the...
7485891 Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memory  
A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between...
7482621 Rewritable nano-surface organic electrical bistable devices  
A bistable electrical device that is convertible between a low resistance state and a high resistance state. The device includes at least one layer of organic low conductivity material that is...
7479650 Method of manufacture of programmable conductor memory  
Programmable conductor memory cells in a stud configuration are fabricated in an integrated circuit by blanket deposition of layers. The layers include a bottom electrode in contact with a...
7476892 Storage node, phase change memory device and methods of operating and fabricating the same  
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
7473574 Memory element with improved contacts  
A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall...
7470924 Phase change RAM device with increased contact area between word line and active area  
A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device...
7470923 Semiconductor integrated circuit device  
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a...
7465952 Programmable non-volatile resistance switching device  
A memory element comprises a first number of electrodes and a second number of electrically conducting channels between sub-groups of two of said electrodes, the channels exhibiting an electrical...
7462857 Memory device including resistance-changing function body  
A resistance-changing function body includes an object made of a first substance and interposed between a first electrode and a second electrode, and a plurality of particles made of a second...
7459717 Phase change memory cell and manufacturing method  
A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second...
7456421 Vertical side wall active pin structures in a phase change memory and manufacturing methods  
A programmable resistor memory, such as a phase change memory, with a memory element comprising narrow vertical side wall active pins is described. The side wall active pins comprise a programmable...
7453082 Small electrode for a chalcogenide switching device and method for fabricating same  
A memory cell and a method of fabricating the memory cell having a small active area are provided. By forming a spacer in a window that is sized at the photolithographic limit, in one embodiment, a...
Matches 1 - 50 out of 177 1 2 3 4 >