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8183552 Semiconductor memory device  
A semiconductor memory device having a first wiring layer which is provided on a first insulator, and which extends in a first direction, and a non-volatile memory cell which is provided in a...
8173987 Integrated circuit 3D phase change memory array and manufacturing method  
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements...
8173486 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
8168538 Buried silicide structure and method for making  
Methods for manufacturing buried silicide lines are described herein, along with high density stacked memory structures. A method for manufacturing an integrated circuit as described herein...
8164081 Memory devices and formation methods  
A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a...
8158967 Integrated memory arrays  
Some embodiments include methods of forming memory arrays. A stack of semiconductor material plates may be patterned to subdivide the plates into pieces. Electrically conductive tiers may be formed...
8154005 Non-volatile memory arrays comprising rail stacks with a shared diode component portion for diodes of electrically isolated pillars  
An integrated circuit including vertically oriented diode structures between conductors and methods of fabricating the same are provided. Two-terminal devices such as passive element memory cells...
8154004 Hybrid MRAM array structure and operation  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
8154006 Controlling the circuitry and memory array relative height in a phase change memory feol process flow  
A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic...
8148708 Resistive memory device and method of fabricating the same  
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a...
8148711 Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using nonvolatile memory element  
A nonvolatile semiconductor apparatus of the present invention comprises (103), a second electrode (105), and a resistance variable layer (104) disposed between the first electrode (103) and the...
8148707 Ovonic threshold switch film composition for TSLAGS material  
A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
8143612 Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing  
An array of “mushroom” style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on the separation layer and forming an arr...
8143611 Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method  
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer,...
8143610 Semiconductor phase-change memory device  
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion...
8138574 PCM with poly-emitter BJT access devices  
A phase change memory (PCM) includes an array comprising a plurality of memory cells, a memory cell comprising a phase change element (PCE); and a PCE access device comprising a bipolar junction...
8139393 Method and apparatus for non-volatile multi-bit memory  
A memory device that selectably exhibits first and second logic levels. A first conductive material has a first surface with a first memory layer formed thereon, and a second conductive material...
8138489 Non-volatile semiconductor storage device and method of manufacturing the same  
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements...
8129709 Nonvolatile memory device  
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select...
8129707 Semiconductor integrated circuit device  
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a...
8129708 Highly integrated phase change memory device having micro-sized diodes and method for manufacturing the same  
A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a...
8124950 Concentric phase change memory element  
A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase...
8125011 Vertical cell edge junction magnetoelectronic device family  
Magnetoelectronic devices are fabricated by joining the edge of one ferromagnetic thin film element with the top, or bottom, portion of a second ferromagnetic, or nonmagnetic, thin film element....
8124951 Phase change memory device with alternating adjacent conduction contacts and fabrication method thereof  
A phase change memory device and an associated method of making same are presented. The phase change memory device, includes first wiring lines, second wiring lines, memory cells, and conduction...
8125021 Non-volatile memory devices including variable resistance material  
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
8120003 Nanowire magnetic random access memory  
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
8120005 Phase change memory devices and their methods of fabrication  
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
8120004 Storage node, phase change memory device and methods of operating and fabricating the same  
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
8113437 RFID device with memory unit having memristor characteristics  
An RFID device may ensure a stable sensing margin by employing a ReRAM. In an embodiment the RFID includes: a radio signal transceiver configured to transmit/receive a radio signal to/from an...
8115282 Memory cell device and method of manufacture  
According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material...
8115188 Memory element and display device  
Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in...
8101936 SnSe-based limited reprogrammable cell  
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first...
8101937 Multistate nonvolatile memory elements  
Multistate nonvolatile memory elements are provided. The multistate nonvolatile memory elements contain multiple layers. Each layer may be based on a different bistable material. The bistable...
8097871 Low operational current phase change memory structures  
Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational...
8097875 Semiconductor memory device  
A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween,...
8093576 Chemical-mechanical polish termination layer to build electrical device isolation  
A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned...
8093578 Nonvolatile memory element, nonvolatile memory element array, and method for manufacturing nonvolatile memory element  
The present invention is configured such that a resistance variable element (16) and a rectifying element (20) are formed on a substrate (12). The resistance variable element (16) is configured...
8093577 Three-dimensional phase-change memory array  
A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first...
8093575 Memristive device with a bi-metallic electrode  
A memristive device having a bimetallic electrode includes a memristive matrix, a first electrode and a second electrode. The first electrode is in electrical contact with the memristive matrix and...
8084762 Resistive memory  
A memory device includes an array of memory structures disposed in rows and columns and constructed over a substrate, each memory structure comprising a first signal electrode, a second signal...
8084760 Ring-shaped electrode and manufacturing method for same  
An electrode structure and a method for manufacturing an integrated circuit electrode includes forming a bottom electrode comprising a pipe-shaped member, filled with a conductive material such as...
8080817 Memory cells  
In some embodiments, a memory cell includes a transistor gate spaced from a channel region by gate dielectric; a source region on one side of the channel region; and a drain region on an opposing...
8076664 Phase change memory with layered insulator  
A phase change memory may be formed with an insulator made up of two different layers having significantly different thermal conductivities. Pores may be formed within the stack of insulating...
8071396 Embedded phase-change memory and method of fabricating the same  
An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and...
8071969 Semiconductor memory device and method for manufacturing same  
A semiconductor memory device includes a word line interconnect layer having a plurality of word lines extending in a word line direction and a bit line interconnect layer having a plurality of bit...
8071972 Silicon based nanoscale crossbar memory  
The present application describes a crossbar memory array. The memory array includes a first array of parallel nanowires of a first material and a second array of parallel nanowires of a second...
8071456 Semiconductor device and method of manufacturing the same  
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film...
8071968 Phase change memory device and method for manufacturing the same  
A phase change memory device and a method of manufacturing the same are presented. The phase change memory device includes a silicon substrate, a first insulation layer, cell switching elements,...
8067761 Self-aligned memory cells and method for forming  
The invention provides a memory cell based on variable resistance material memory element that includes an access device having a pillar structure that may also include a protective sidewall layer....
8062923 Thin film fuse phase change cell with thermal isolation pad and manufacturing method  
A memory device comprising a first electrode having a top side, a second electrode having a top side and an insulating member between the first electrode and the second electrode. The insulating...
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