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8183661 Semiconductor die with event detection for reduced power consumption  
According to one exemplary embodiment, a power managing semiconductor die with reduced power consumption includes a power island including an event detection block and an event qualification block....
8174052 Standard cell libraries and integrated circuit including standard cells  
A standard cell library includes a first power rail, a second power rail, a third power rail, a first standard cell, and second standard cells. The first power rail extends in a first direction....
8163627 Method of forming isolation layer of semiconductor device  
A method of forming an isolation layer of a semiconductor device is disclosed herein, the method comprising the steps of providing a semiconductor substrate in which a tunnel insulating layer and a...
8164157 Signal absorption induction circuit  
This patent pertains to a new technique of increasing the amount of energy absorbed by an antenna. It accomplishes this by broadcasting a spike that attracts the signal when the fields of its...
8164155 Semiconductor device and method of manufacturing the same  
A method for manufacturing a semiconductor device includes forming an N-well and a P-well formed in a semiconductor substrate. An isolation layer may be formed in the semiconductor substrate. At...
8159009 Semiconductor device having strain material  
A semiconductor device having strain material is disclosed. In a particular embodiment, the semiconductor device includes a first cell including a first gate between a first drain and a first...
8148203 Technique for stable processing of thin/fragile substrates  
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the...
8138529 Package configurations for low EMI circuits  
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain...
8136071 Three dimensional integrated circuits and methods of fabrication  
The invention relates to multi-planar logic components in a three-dimensional (3D) integrated circuit (IC) apparatus configuration. A multi-planar integrated circuit connected by through silicon...
8120139 Void isolated III-nitride device  
Isolation of III-nitride devices may be performed with a dopant selective etch that provides a smooth profile with little crystal damage in comparison to previously used isolation techniques. The...
8115274 Fuse structure and method for manufacturing same  
A fuse structure includes a substrate, a fuse conductive trace disposed closer to a first chip surface than to a second chip surface facing away from the first chip surface, a metallization layer...
8115256 Semiconductor device  
A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes...
8114739 Semiconductor device with oxygen-diffusion barrier layer and method for fabricating same  
Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer...
8110890 Method of fabricating semiconductor device isolation structure  
A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one...
8102024 Semiconductor integrated circuit and system LSI including the same  
A semiconductor integrated circuit having a diode element includes a diffusion layer which constitutes the anode and two diffusion layers which are provided on the left and right sides of the anode...
8103025 Surface mountable transducer system  
The present invention relates to a surface mountable acoustic transducer system, comprising one or more transducers, a processing circuit electrically connected to the one or more transducers, and...
8084297 Method of implementing a capacitor in an integrated circuit  
A method of implementing a capacitor in an integrated circuit package is disclosed. The method comprises coupling the capacitor to a first surface of a substrate of the integrated circuit package;...
8076196 Semiconductor device and fabrication method for the same  
The semiconductor device includes: memory cells each having a first multilayer electrode including a first lower electrode made of a first conductive film and a first upper electrode made of a...
8072077 Semiconductor memory device  
Disclosed herein is a semiconductor memory device for reducing a junction resistance and increasing amount of current throughout the unit cell. A semiconductor memory device comprises plural unit...
8063467 Semiconductor structure and method of manufacture  
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material to...
8053346 Semiconductor device and method of forming gate and metal line thereof with dummy pattern and auxiliary pattern  
A gate in a semiconductor device is formed to have a dummy gate pattern that protects a gate. Metal lines are formed to supply power for a semiconductor device and transfer a signal. A...
8044394 Semiconductor wafer with electrically connected contact and test areas  
The invention relates to an arrangement of contact areas and test areas on patterned semiconductor chips. The contact areas and the test areas are electrically connected to one another via a...
8039921 Wiring structure, semiconductor device and manufacturing method thereof  
A semiconductor device with a high-strength porous modified layer having a pore size of 1 nm or less, which is formed, in a multilayer wiring forming process, by forming a via hole and a wiring...
8035188 Semiconductor device  
Plural I/O cells (14) having electrode pads for wire bonding (13) are disposed with spaces (55) between them in the vicinity of a corner of an I/O region (11) of a semiconductor substrate (10), and...
8035189 Semiconductor constructions  
The invention includes methods of forming oxide structures under corners of transistor gate stacks and adjacent trenched isolation regions. Such methods can include exposure of a semiconductor...
8030731 Isolated rectifier diode  
An isolated diode comprises a floor isolation region, a dielectric-filled trench and a sidewall region extending from a bottom of the trench at least to the floor isolation region. The floor...
8026570 Semiconductor integrated circuit device having power switch controller with gate insulator thickness for controlling multiple power switches  
A semiconductor integrated circuit device having a control signal system for avoiding failure to check an indefinite signal propagation prevention circuit, for facilitating a check included in an...
8022498 Electrostatic discharge management apparatus, systems, and methods  
Apparatus, systems, and methods may include managing electrostatic discharge events by using a semiconductor device having a non-aligned gate to implement a snap-back voltage protection mechanism....
8021989 Method for high topography patterning  
One inventive aspect is related to a method for isolating structures of a semiconductor material, comprising providing a pattern of the semiconductor material comprising at least one elevated line,...
8022497 Semiconductor device comprising insulating film  
A semiconductor device capable of preventing an interlayer dielectric film from deterioration resulting from a liquid such as a chemical solution penetrating into the interlayer dielectric film and...
8013415 Semiconductor device having a circular-arc profile on a silicon surface  
A semiconductor device includes a shallow isolation trench (STI) structure on a silicon substrate for isolating element-forming regions from one another. The surface region of the silicon substrate...
8003488 Shallow trench isolation structure compatible with SOI embedded DRAM  
A deep trench is formed in a semiconductor-on-insulator (SOI) substrate and a pad layer thereupon. A conductive trench fill region is formed in the deep trench. A planarizing material layer having...
7999348 Technique for stable processing of thin/fragile substrates  
A semiconductor on insulator (SOI) wafer includes a semiconductor substrate having first and second main surfaces opposite to each other. A dielectric layer is disposed on at least a portion of the...
7999349 Front-rear contacts of electronics devices with induced defects to increase conductivity thereof  
An electronic device is proposed. The device is integrated in a chip including at least one stacked layer having a front surface and a rear surface opposite the front surface, the device including:...
7994609 Shielding for integrated capacitors  
A capacitor in an integrated circuit (“IC”) includes a core capacitor portion having first conductive elements electrically connected to and forming a part of a first node of the capacitor for...
7994550 Semiconductor structures having both elemental and compound semiconductor devices on a common substrate  
A semiconductor structure comprising: a substrate; a seed layer supported by the substrate; an elemental semiconductor layer disposed over a first portion of the seed layer; and a compound...
7982279 Method of manufacturing stacked-type semiconductor device  
A method of manufacturing a stacked-type semiconductor device, including the steps of: forming dividing grooves, having a depth corresponding to a finished thickness for a plurality of first chips...
7977762 Effective shield structure for improving substrate isolation of analog circuits from noisy digital circuits on a system-on-chip (SOC)  
An integrated circuit (IC) is disclosed to include a central area of the IC that is partitioned into a first section containing at least one digital circuit and a second section containing at least...
7956437 Isolation structures for integrated circuits  
A variety of isolation structures for semiconductor substrates include a trench formed in the substrate that is filled with a dielectric material or filled with a conductive material and lined with...
7952160 Packaged voltage regulator and inductor array  
Inductors packaged with a voltage regulator for an integrated circuit within the same package are deposited to a sufficient thickness to reduce resistance and improve the quality factor....
7948051 Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same  
A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having...
7944016 Power managing semiconductor die with event detection circuitry in thick oxide for reduced power consumption  
According to one exemplary embodiment, a power managing semiconductor die with reduced power consumption includes a power island including an event detection block and an event qualification block....
7932295 Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device  
A method of forming an organic silica-based film, including: applying a composition for forming an insulating film for a semiconductor device, which is cured by using heat and ultraviolet...
7923820 Method of producing a porous dielectric element and corresponding dielectric element  
A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from...
7916571 Apparatus for implementing multiple integrated circuits using different gate oxide thicknesses on a single integrated circuit die  
An apparatus comprising plurality of functional integrated circuit blocks, each manufactured with different oxide thicknesses on a monolithic integrated circuit die, is described. Using different...
7906828 High-voltage integrated circuit device including high-voltage resistant diode  
A high-voltage integrated circuit includes a low-voltage circuit region having a plurality of semiconductor devices, which operate with respect to a ground voltage, a high-voltage circuit region...
7906383 Stress transfer in an interlayer dielectric by providing a stressed dielectric layer above a stress-neutral dielectric material in a semiconductor device  
By forming a stressed dielectric layer on different transistors and subsequently relaxing a portion thereof, the overall process efficiency in an approach for creating strain in channel regions of...
7902611 Integrated circuit well isolation structures  
An integrated circuit is provided with transistor body regions that may be independently biased. Some of the bodies may be forward body biased to lower threshold voltages and increase transistor...
7902627 Capacitive isolation circuitry with improved common mode detector  
An integrated circuit having voltage isolation capabilities comprising a first galvanically isolated area of the integrated circuit containing a first group of functional circuitry for processing a...
7902986 RFID tag  
An RFID tag of the present invention is provided to suppress variations in the capacity component that occur during physical coupling between an antenna and a semiconductor chip as part of the...
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