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7608913 Noise isolation between circuit blocks in an integrated circuit chip  
An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first...
7598588 Semiconductor structure and method of manufacture  
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor device includes a plurality of rectilinear structures,...
7592685 Device and methodology for reducing effective dielectric constant in semiconductor devices  
Semiconductor structure includes an insulator layer having at least one interconnect feature and at least one gap formed in the insulator layer spanning more than a minimum spacing of interconnects.
7586173 Method and apparatus for using flex circuit technology to create a reference electrode channel  
A method of creating a sensor that may include applying a first conductive material on a first portion of a substrate to form a reference electrode and depositing a first mask over the substrate,...
7579669 Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof  
A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has...
7576405 Semiconductor integrated circuit for reducing leak current through MOS transistors  
A semiconductor device is composed of: a power control region within which function cells are arranged; a basic power supply line overlapping said power control region, and positioned in a power...
7573116 Etch aided by electrically shorting upper and lower sidewall portions during the formation of a semiconductor device  
A method used to fabricate a semiconductor device comprises etching a dielectric layer, resulting in an undesirable charge buildup along a sidewall formed in the dielectric layer during the etch....
7573064 Dielectric actuator or sensor structure and method of making it  
The present invention relates to dielectric actuators or sensors of the kind wherein electrostatic attraction between two electrodes located on an elastomeric body leads to a compression of the...
7569899 Semiconductor integrated circuit  
Logic LSI includes first power domains PD 1 to PD 4, thick-film power switches SW 1 to SW 4, and power switch controllers PSWC 1 to PSWC 4. The thick-film power switches are formed by...
7564114 Semiconductor devices and methods of manufacture thereof  
Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
7560794 DUV laser annealing and stabilization of SiCOH films  
A method of fabricating a dielectric film comprising atoms of Si, C, O and H (hereinafter SiCOH) that has improved insulating properties as compared with prior art dielectric films, including prior...
7557421 Hybrid radio frequency integrated circuit using gallium nitride epitaxy layers grown on a donor substrate  
The present invention is a hybrid integrated circuit comprising at least two semiconductor dies. A high performance semiconductor die includes high performance epitaxy layers grown on a donor...
7550855 Vertically spaced plural microsprings  
A plurality of vertically spaced-apart microsprings are provided to increase microspring contact force, contact area, contact reliability, and contact yield. The microspring material is deposited,...
7545276 Semiconductor device  
The present invention provides a semiconductor device including an antenna, and at least a first integrated circuit and a second integrated circuit which are connected to the antenna, wherein the...
7544896 Forming a porous dielectric layer and structures formed thereby  
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a dielectric layer utilizing a plasma, wherein the plasma comprises a porogen and...
7538408 Inhibition of parasitic transistor operation in semiconductor device  
A semiconductor device includes a surface layer on the side of a first principal surface of a p-semiconductor substrate, a high side n-isolation-diffused region and a low side n-isolation-diffused...
7528052 Method for fabricating semiconductor device with trench isolation structure  
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a...
7518209 Isolation of a high-voltage diode between a high-voltage region and a low-voltage region of an integrated circuit  
Provided is a high-voltage integrated circuit device including a high-voltage resistant diode. The device includes a low-voltage circuit region having a plurality of semiconductor devices, which...
7518194 Current amplifying integrated circuit  
Present invention proposes a dramatic improvement of CMOS IC technology by providing high speed bipolar current amplifiers compatible with CMOS technological process while retaining the footprint...
7514761 Triple operation voltage device  
A triple operation voltage device including a first type substrate, a high voltage (HV) first type well, a second type well, a low voltage (LV) device well, and a middle voltage (MV) device well is...
7504703 Semiconductor integrated circuit device  
A semiconductor integrated circuit device includes a semiconductor substrate having a first surface. First wells of first conductive type are formed on the semiconductor substrate. Second wells of...
7493582 Pattern layout and layout data generation method  
A transistor layout including a diffusion region and a gate line. The gate line intersects part of the diffusion region in an overlapping manner. The layout includes an L-shaped bent portion...
7492988 Ultra-compact planar AWG circuits and systems  
Planar AWG circuits and systems are disclosed that use air trench bends to increase planar circuit compactness.
7485942 Films deposited at glancing incidence for multilevel metallization  
Systems, devices and methods are provided to improve performance of integrated circuits by providing a low-k insulator. One aspect is an integrated circuit insulator structure that includes a...
7482661 Pattern forming method and semiconductor device manufactured by using said pattern forming method  
A pattern forming method includes determining an allowable value of an etching conversion difference, obtaining a maximum distance between patterns generating the etching conversion difference...
7476957 Semiconductor integrated circuit  
An integrated circuit includes: a first well of a first conductivity type; a second well of a second conductivity type coming into contact with the first well at a well boundary extending in a gate...
7471146 Optimized circuits for three dimensional packaging and methods of manufacture therefore  
An embodiment of the present invention provides an apparatus, comprising an integrated circuit, wherein a first portion of the integrated circuit is placed on a top tier substrate and a second...
7468535 Self-aligned integrated electronic devices  
A process for self-aligned manufacturing of integrated electronic devices includes: forming, in a semiconductor wafer having a substrate, insulation structures that delimit active areas and project...
7466190 Charge pump with four-well transistors  
In one embodiment, a (negative-voltage) charge pump with one or more stages that receives a (high) input voltage and generates a higher-magnitude (negative) output voltage. Each stage has two...
7465986 Power semiconductor device including insulated source electrodes inside trenches  
A power semiconductor device includes a plurality of trenches formed within a semiconductor body, each trench including one or more electrodes formed therein. In particular, according to...
7450793 Semiconductor device integrated with opto-electric component and method for fabricating the same  
A semiconductor device integrated with opto-electric component and method for fabricating the same provides a wafer with a plurality of optical transmitter/receiver components, and each of the...
7446382 Method and apparatus for fabrication of passivated microfluidic structures in semiconductor substrates  
A method and apparatus for fabrication of passivated microfluidic structures is disclosed. The method includes providing a substrate having a microfluidic structure formed therein. The microfluidic...
7440449 High speed switching module comprised of stacked layers incorporating t-connect structures  
A compact multi-stage switching network ( 100 ), and a router ( 510 ) incorporating such multi-stage switching network, adapted for simultaneously routing a plurality of data packets from a first...
7439603 Non-volatile memory device and fabricating method thereof  
The present invention provides a non-volatile memory device and fabricating method thereof, by which a cell size can be lowered despite high degree of cell integration and by which the device...
7436042 Circuit for driving gate of power MOSFET  
A circuit for driving a gate of a power metal-oxide semiconductor field effect transistor (MOSFET), which uses a higher voltage than a gate controller is provided. The circuit is able to safely and...
7424688 Designing and fabrication of a semiconductor device  
Designing method of an electronic device subjected to a chemical mechanical polishing process in a fabrication process thereof is conducted according to the steps of: dividing a substrate surface...
7420248 Programmable random logic arrays using PN isolation  
Disclosed are a programmable, random logic device array, and a method of forming such a device. The device comprises a substrate, and a semiconductor layer above the substrate. That semiconductor...
7420239 Dielectric layer forming method and devices formed therewith  
Embodiments in accordance with the present invention provide alternative materials, and methods of forming such materials, that are effective as dielectric layers. Such embodiments include forming...
7417297 Film or layer of semiconducting material, and process for producing the film or layer  
SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm 2 , and a surface roughness of 0.2 nm RMS.
7414437 Nanomechanical computer  
An electromechanical switching device employs a first nanoscale pillar shuttling charge between opposed charged electrodes. Motion of the first pillar is coupled to a second set of pillars...
7414292 Semiconductor device and its manufacturing method  
A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon...
7411270 Composite capacitor and method for forming the same  
An electronic assembly ( 98 ) includes a substrate ( 20 ), a capacitor having first and second conductors ( 38,54 ) formed over the substrate, a first set of conductive members ( 76 ) formed over...
7411267 Semiconductor integrated circuit device  
The invention provides a semiconductor integrated circuit device with improved designing efficiency while achieving higher functions. An inner circuit is surrounded by a plurality of cells in which...
7410872 Sealing method for electronic devices formed on a common semiconductor substrate and corresponding circuit structure  
A method for sealing electronic devices formed on a semiconductor substrate includes forming a plurality of first electronic devices adjacent a first portion of the semiconductor substrate, with...
7405459 Semiconductor device comprising porous film  
The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels...
7402884 Low crosstalk substrate for mixed-signal integrated circuits  
An integrated circuit laminate with a metal substrate for use with high performance mixed signal integrated circuit applications. The metal substrate provides substantially improved crosstalk...
7402883 Back end of the line structures with liner and noble metal layer  
A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure,...
7396723 Method of manufacturing EEPROM device  
A method of manufacturing an EEPROM device can reduce the cell area. The method of manufacturing an Electrically Erasable Programmable Read-Only Memory (EEPROM) includes forming a mask pattern over...
7394143 Semiconductor integrated circuit device  
Repeaters are arranged at arbitrary positions to substantially improve transmission speed of a signal. In the semiconductor integrated circuit device 1, repeater regions 10 where repeaters are...
7394142 Bulk-isolated PN diode and method of forming a bulk-isolated PN diode  
A technique for making a bulk isolated PN diode. Specifically, a technique is provided for making a voltage clamp with a pair of bulk isolated PN diode. Another embodiment provides for a voltage...
Matches 1 - 50 out of 283 1 2 3 4 5 6 >