Matches 201 - 250 out of 287 < 1 2 3 4 5 6 >
Match Document Document Title
6355966 Methods of forming an integrated circuitry isolation trench, method of forming integrated circuitry, and integrated circuitry  
A method of forming an integrated circuitry trench isolation region includes etching a first portion of an isolation trench into a semiconductor substrate. The first portion has laterally opposing...
6351018 Monolithically integrated trench MOSFET and Schottky diode  
A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to...
6348718 Integrated CMOS circuit for use at high frequencies  
The invention relates to an integrated CMOS circuit for use at high frequencies with active CMOS components ( 12 ) and passive components ( 16, 18, 20 ). The active CMOS components ( 12 ) are...
6337286 Method for etching metals using organohalide compounds  
A process for plasma etching metal films comprising the steps of forming a noble gas plasma, then transporting the noble gas plasma to a mixing chamber. An organohalide is added to the noble gas...
6323531 Two-chip power IC having an improved short-circuit response  
The invention relates to a two-chip power IC, in which a sensor chip having a sensor is mounted on a switch chip having a switch. The sensor is electrically connected to the switch in order to turn...
6316815 Structure for isolating integrated circuits in semiconductor substrate and method for making it  
A trench isolation structure characterized by a dielectric stud filling and spanning a trench in a semiconductor substrate is suggested for isolating the integrated circuits fabricated in the...
6291875 Microfabricated structures with electrical isolation and interconnections  
The invention is directed to a microfabricated device. The device includes a substrate that is etched to define mechanical structures at least some of which are anchored laterally to the remainder...
6259123 High voltage power MOS device  
A switching device is described having a semiconductor substrate with a front side and a back side. The switching device includes a first transistor which includes a first region adjacent the front...
6232646 Shallow trench isolation filled with thermal oxide  
A semiconductor apparatus and method for producing shallow trench isolation. The method includes the steps providing a semiconductor substrate member fabricated having a thin barrier oxide layer on...
6228511 Structure and process for thin film interconnect  
This invention relates generally to a structure and process for thin film interconnect, and more particularly to a structure and process for a multilayer thin film interconnect structure with...
6222213 Semiconductor integrated circuit device  
In order that an internal logic circuit area and an outside input/output cell group are easily connected, a plurality of input/output cell groups for performing signal transfer with an external...
6198150 Integrated circuit with deep trench having multiple slopes  
A quick, deep, clean two step trench process for an SOI/bonded wafer substrate 100 is disclosed. A first isotropic plasma etch using SF6 is made through an opening 40 in the photoresist layer on...
6194772 High-voltage semiconductor device with trench structure  
A structure for high-voltage semiconductor devices that have trench structure, substantially facilitating the integration of the high-voltage devices and the low-voltage devices, is disclosed. The...
6188110 Integration of isolation with epitaxial growth regions for enhanced device formation  
A method of forming integrated isolation regions and active regions includes first forming a plurality of dielectric layers upon a semiconductor substrate. Then, a patterned mask is applied to...
6097067 Semiconductor device with electrically isolated transistor  
In a semiconductor apparatus comprises a signal input portion having an amplifying circuit including one, two or more insulating gate type transistors (MIS Tr), one MIS Tr or at least one (M1) of...
6091657 Integrated circuit having protection of low voltage devices  
When flash memory devices are scaled down into the deep-submicron regime, tub erase is being increasingly deployed because it features lower erase current and better reliability performance than...
6081004 BiCMOS compacted logic array  
A repeating cell structure in a semiconductor substrate for a BiCMOS logic gate array. The cell structure has three regions shaped as columns. The first columnar region is a P-well and has four...
5986304 Punch-through prevention in trenched DMOS with poly-silicon layer covering trench corners  
The present invention includes a substrate of a first conductivity type having a top surface including at least two intersecting trenches disposed therein with an insulating layer lining the...
5962907 Semiconductor device and method of manufacturing the same  
A semiconductor device having a memory device and a logic device formed together on a single chip is provided. A first element region and a second element region of a semiconductor substrate are...
5920107 Semiconductor integrated circuit device with high integration density  
In a semiconductor device having a PN junction element separating region, in order to reduce a width of the PN junction element separating region without sacrifice of a punch-through breakdown...
5898677 Integrated circuit device having a switched routing network  
Signal area efficiency in integrated circuit designs is improved by increasing the information efficiency of signal wiring on an integrated circuit. Candidate signals are selected for combination...
5870621 Quadrilateral multichip computer systems and printed circuit boards therefor  
A computer system (6) includes a printed circuit board (302), a microprocessor chip (102), a peripheral unit chip (110), a card interface chip (112), and a display controller chip (114) mounted on...
5861658 Inorganic seal for encapsulation of an organic layer and method for making the same  
An inorganic seal for encapsulation of an organic layer during passivation of an integrated circuit device and method for making the same is disclosed. The seal creates a structure which forms an...
5834822 Image sensor  
An image sensor includes a substrate on which a light-receiving element and a thin-film transistor for transferring an output from the light-receiving element are formed, and a silicon integrated...
5828120 Semiconductor device and production method thereof  
A semiconductor device equipped on the same substrate thereof with a first area isolated for device isolation by a first device isolation structure and with a second area isolated for device...
5821600 Isolation by active transistors with grounded gates  
An isolation gate structure is formed between active areas on a P-type semiconductor substrate. The isolation structure includes a thick gate oxide layer over which is formed a P-doped...
5789793 Dielectrically isolated well structures  
A method for fabricating a semiconductor device comprising fabricating a sacrificial wafer having a substrate wafer which includes a diffused layer and one or two epi layers. The sacrificial wafer...
5789792 Isolation trench structures protruding above a substrate surface  
A structure includes an element isolating region for isolating a transistor formation region having an MOS transistor from other element formation region. Two or more trenches is formed at a...
5786604 Element-isolated hydrogen-terminated diamond semiconductor device and its manufacturing method  
A diamond semiconductor device having at least one MESFET integrated on a single diamond substrate and insulated from other semiconductor elements is made by preparing a homoepitaxial diamond film...
5773872 Semiconductor device having an integrated differential circuit with an improved common-mode rejection ratio (CMRR)  
Capacitors C1 and C2, as insulation layer separated elements forming an element pair of a differential circuit, have a common independent N well formed independently of an N well connected to a...
5767561 Integrated circuit device with isolated circuit elements  
A device with at least one noise-sensitive element, at least one noise-generating element, and a porous silicon barrier in the substrate is disclosed. The porous silicon barrier isolates the...
5723895 Field effect transistor formed in semiconductor region surrounded by insulating film  
A field effect semiconductor device includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type provided above the first...
5723896 Integrated circuit structure with vertical isolation from single crystal substrate comprising isolation layer formed by implantation and annealing of noble gas atoms in substrate  
An integrated circuit structure vertically isolated electrically from the underlying substrate is formed in/on a single crystal semiconductor substrate, such as a silicon semiconductor wafer, by...
5693970 Dynamic random access memory device comprising memory cells having capacitor formed above cell transistor and peripheral circuit for improving shape and aspect ratio of contact hole in the peripheral circuit and producing method thereof  
A polycrystal silicon layer is used to a cell plate of a capacitor in a memory cell portion including a plurality of memory cells, and a Si 3 N 4 film layer is used to form a capacitor above a...
5677564 Shallow trench isolation in integrated circuits  
The invention concerns fabrication of oxide-filled isolation trenches in integrated circuits. The invention etches a network of trenches in the surface of a uniformly doped wafer which has...
5640026 Compound semiconductor device including implanted isolation regions  
A method of performing element separation by ion implantation for a compound semiconductor device includes performing first ion implantation into the entire contour of the device periphery region...
5621239 SOI device having a buried layer of reduced resistivity  
In a semiconductor device, first and second substrates are supported with respective first major surfaces in opposing, parallel and spaced relationship. A conductor layer of low resistivity...
5610854 Semiconductor memory device and fabrication process thereof  
A method for fabricating a semiconductor memory device includes the steps of forming, in a semiconductor substrate of a first conductivity type, a well of a second opposite conductivity type by...
5583788 Automatic layout design method of wirings in integrated circuit using hierarchical algorithm  
A method, according to a hierarchical processing used for a computer-aided design system, for automatically wiring a circuit by dividing a region into a plurality of coarse global grids. The...
5576575 Semiconductor conversion device  
A semiconductor conversion device is disclosed with particular utility in connection with minimizing malfunctions of the device's switching elements. The conversion device according to the present...
5479036 Fieldless split-gate EPROM/Flash EPROM  
A device and method of manufacturing the device comprising a self-aligned, split-gate EPROM/Flash EPROM array device. Ions are implanted into locations in a doped well in a substrate to form buried...
5479038 Semiconductor device having a multilevel metallization  
Upper and lower metallizations are formed on a semiconductor substrate so as to prevent the upper metallization from being inferior wherein the semiconductor substrate includes a plurality of...
5440162 ESD protection for submicron CMOS circuits  
An ESD protection circuit for the pads of an integrated circuit (IC) using silicide-clad diffusions is disclosed. The circuit uses a robust N+ diode with N-well block, an output NFET and a large...
5416354 Inverted epitaxial process semiconductor devices  
A semiconductor device is disclosed having improved vertical gain symmetry, and which includes thick, lightly-doped regions which are dielectrically isolated and provided by at least two separately...
5401984 Semiconductor component for transient voltage limiting  
A semiconductor component for limiting transient voltages on the signal or other supply lines of a system, includes, in a common semiconductor body, a plurality of multi-junction diodes connected...
5399900 Isolation region in a group III-V semiconductor device and method of making the same  
A semiconductor device having in a body of a group III-V semiconductor material at least one isolation region which is stable at temperatures up to about 900° C. The isolation region is formed of...
5400278 Semiconductor memory device and method of manufacturing the same  
In a semiconductor memory device according to the present invention, a conductive layer is formed on a field oxide film in a boundary region on the main surface of a semiconductor substrate. A...
5399898 Multi-chip semiconductor arrangements using flip chip dies  
Multi-chip, multi-tier semiconductor arrangements based upon single and double-sided flip-chips are described. The double-sided flip chips provide raised bump contact means on both major surfaces...
5381033 Dielectrics dividing wafer  
A dielectrics dividing wafer is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of...
5374833 Structure for suppression of field inversion caused by charge build-up in the dielectric  
The invention relates to an integrated circuit including one or more amorphous silicon layers for neutralizing charges which occur in various dielectric layers during fabrication. The amorphous...
Matches 201 - 250 out of 287 < 1 2 3 4 5 6 >