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7595542 Periphery design for charge balance power devices  
A charge balance semiconductor power device comprises an active area having strips of p pillars and strips of n pillars arranged in an alternating manner, the strips of p and n pillars extending...
7589377 Gate structure with low resistance for high power semiconductor devices  
In accordance with an embodiment of the present invention, a gate structure for a U-shape Metal-Oxide-Semiconductor (UMOS) device includes a dielectric layer formed into a U-shape having side walls...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7566925 Image sensor and method of fabricating the same  
Image sensors and methods of fabricating the same are provided. The image sensor includes a blocking pattern disposed on photodiodes. The blocking pattern is formed of insulation material having a...
7560787 Trench field plate termination for power devices  
In accordance with an embodiment of the invention, a semiconductor power device includes an active region configured to conduct current when the semiconductor device is biased in a conducting...
7541660 Power semiconductor device  
A The semiconductor device has a heavily doped substrate and an upper layer with doped silicon of a first conductivity type disposed on the substrate, the upper layer having an upper surface and...
7525178 Semiconductor device with capacitively coupled field plate  
A termination region of a semiconductor die is provided, which includes one or more field rings arranged in the termination region, one or more metal field plates, and an insulation layer disposed...
7385273 Power semiconductor device  
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation...
7211861 Insulated gate semiconductor device  
An insulated gate semiconductor device, includes an isolating structure shaped in a circulating section along the periphery of a semiconductor substrate to isolate that part from an inside device...
7180158 Semiconductor device and method of manufacture  
A semiconductor component and method of manufacture, including an insulated gate bipolar transistor (IGBT) ( 100 ) including a semiconductor substrate ( 110 ) having a first conductivity type and...
7166866 Edge termination for silicon power devices  
A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conduction type disposed on the substrate. The upper layer comprises a...
7049675 High withstand voltage semiconductor device  
A high withstand voltage semiconductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration...
7049663 ESD protection device with high voltage and negative voltage tolerance  
An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first...
7042046 Super-junction semiconductor device and method of manufacturing the same  
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or...
6943410 High power vertical semiconductor device  
A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high...
6940138 Semiconductor device, semiconductor gate array, electro-optical device, and electronic equipment  
A structure is provided which suppresses a parasitic bipolar effect without decreasing the breakdown voltage at the junctions between the excessive carrier extracting region and source/drain...
6870201 High voltage resistant edge structure for semiconductor components  
The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones...
6847091 Vertical semiconductor component having a reduced electrical surface field  
A vertical semiconductor component having a semiconductor body of a first conductivity type is described. In a surface region of the semiconductor body, at least one zone of a second conductivity...
6828645 Voltage withstanding structure for a semiconductor device  
A semiconductor device comprising: a semiconductor substrate, a dielectric film formed on the semiconductor substrate, a first electrode and a second electrode separated from each other on the...
6770917 High-voltage diode  
A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a...
6744112 Multiple chip guard rings for integrated circuit and chip guard ring interconnect  
An integrated circuit having structure for isolating circuit sections having at least one differing characteristic. The structure includes a chip guard ring for each circuit section having the at...
6743703 Power diode having improved on resistance and breakdown voltage  
A two-terminal power diode has improved reverse bias breakdown voltage and on resistance includes a semiconductor body having two opposing surfaces and a superjunction structure therebetween, the...
6693339 Semiconductor component and method of manufacturing same  
A semiconductor component includes a first semiconductor region ( 110, 210 ) having a first conductivity type and a second semiconductor region ( 120, 220 ) above the first semiconductor region and...
6693327 Lateral semiconductor component in thin-film SOI technology  
A lateral semiconductor element ( 10 ) in thin-film SOI technology comprises an insulator layer ( 14 ) which rests on a substrate ( 12 ) and is buried under a thin silicon film ( 16 ), on top of...
6646304 Universal semiconductor wafer for high-voltage semiconductor components  
A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first...
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein  
A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first...
6603186 Bipolar transistor with base drive circuit protection  
An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the...
6576935 Bidirectional semiconductor device and method of manufacturing the same  
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The...
6555893 Bar circuit for an integrated circuit  
The present invention provides a bar circuit for reducing cross talk and eddy current of an integrated circuit. The bar circuit comprises a semiconductor substrate with a first conductivity type; a...
6518589 Dual mode FET & logic circuit having negative differential resistance mode  
An electronic device includes a FET that is capable of operating in a negative differential resistance mode as well as in a conventional FET mode. The selection of the mode can be accomplished by...
6507050 Thyristors having a novel arrangement of concentric perimeter zones  
The forward and reverse blocking voltage capability of a thyristor in accordance with the invention is substantially independent of the active thyristor area (Aa), thereby facilitating its design...
6489666 Semiconductor device with improved heat suppression in peripheral regions  
A semiconductor device ( 102 ) comprises an N type semiconductor substrate ( 1 ). A P layer ( 22 ) is formed in a first surface (S 1 ) of the semiconductor substrate ( 1 ), and a P layer ( 23 ) is...
6486524 Ultra low Irr fast recovery diode  
A FRED device having an ultralow I rr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P...
6465863 Power diode structure  
The invention relates to a power diode structure having improved dynamic characteristics which comprises a semiconductor body of a first conduction type. A semiconductor zone of the other...
6445054 Semiconductor device  
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate...
6441455 Low dosage field rings for high voltage semiconductor device  
The active area of a semiconductor die is surrounded by a plurality of concentrically spaced ring shaped P type diffusions. The diffusions have a low concentration produced by a total boron implant...
6410950 Geometrically coupled field-controlled-injection diode, voltage limiter and freewheeling diode having the geometrically coupled field-controlled-injection diode  
A pin diode includes an inner zone, a cathode zone and an anode zone. A boundary surface between the inner zone and the anode zone is at least partly curved and/or at least one floating region...
6369424 Field effect transistor having high breakdown withstand capacity  
A field effect transistor having a high breakdown withstand capacity is provided. An active region 7 a is surrounded by a fixed potential diffusion layer 16 , and a channel region 15 is formed...
6262466 Lateral semiconductor structure for forming a temperature-compensated voltage limitation  
A lateral semiconductor structure having a punch-through diode for forming a temperature-compensated voltage limitation in which the space charge resistance is reduced through a lateral arrangement...
6242786 SOI Semiconductor device with field shield electrode  
A field shield portion consisting of a kind of transistor is formed to electrically insulate an NMOS region of a memory cell from other regions. The field shield portion includes a field shield...
6215168 Doubly graded junction termination extension for edge passivation of semiconductor devices  
A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conductivity type disposed on the substrate. The upper layer includes...
6177713 Free wheel diode for preventing destruction of a field limiting innermost circumferential layer  
An anode electrode metal layer composed of aluminum is formed in a region on the inner side than an anode layer formed on a main surface of a semiconductor substrate. Thus, an impurity diffusion...
6091108 Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage  
A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and...
6081009 High voltage mosfet structure  
A high voltage MOSFET with low on-resistance and a method of lowering the on-resistance for a specific device breakdown voltage of a high voltage MOSFET. The MOSFET includes a blocking layer of a...
6066884 Schottky diode guard ring structures  
The specification describes Schottky barrier devices with distributed guard rings. In one embodiment the guard ring only partially overlaps the barrier. In another embodiment the guard ring is...
5969400 High withstand voltage semiconductor device  
A semiconductor device includes a first semiconductor layer of a first conductivity type having first and second main surfaces, a second semiconductor layer of a second conductivity type...
5959342 Semiconductor device having a high voltage termination improvement  
A high voltage semiconductor device having an improved junction termination extension for increasing the surface breakdown junction voltage. The device comprises a semiconductor substrate (10) of a...
5903020 Silicon carbide static induction transistor structure  
A static induction transistor having a silicon carbide substrate upon which is deposited a silicon carbide layer arrangement. The layer arrangement has a plurality of spaced gate regions for...
5864167 Semiconductor device  
In a MOSFET or other high voltage device, an annular channel stopper (4) extends around the outer periphery (14) of a body portion (11) with which a device region (15) forms a p-n junction (5)...
5841181 Semiconductor apparatus having field limiting rings  
It is an object to provide a semiconductor apparatus having improved dielectric breakdown strength characteristics both by eliminating the discontinuity caused to the interface between a...
Matches 1 - 50 out of 112 1 2 3 >