Matches 1 - 50 out of 96 1 2 >
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7629665 Semiconductor component with a channel stop zone  
A semiconductor component has a semiconductor body ( 100 ) having a basic doping and a first and second side, an inner region ( 103 ) arranged between the first and second sides, and an edge region...
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation  
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A...
7598585 Structure for preventing leakage of a semiconductor device  
A structure for preventing leakage of a semiconductor device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7525178 Semiconductor device with capacitively coupled field plate  
A termination region of a semiconductor die is provided, which includes one or more field rings arranged in the termination region, one or more metal field plates, and an insulation layer disposed...
7388266 Structure for leakage prevention of a high voltage device  
A structure for preventing leakage of a high voltage device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line...
7385273 Power semiconductor device  
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation...
7372111 Semiconductor device with improved breakdown voltage and high current capacity  
The superjunction semiconductor device includes a drain drift section, which includes a first alternating conductivity type layer formed of first n-type regions and first p-type regions arranged...
7279768 Semiconductor device for overvoltage protection  
In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across an upper...
7193255 Semiconductor device with floating conducting region placed between device elements  
Floating conducting regions at floating potentials are placed on a substrate surface between adjacent conducting regions to which predetermined potentials are applied. This makes it possible to...
7135742 Insulated gate type semiconductor device and method for fabricating same  
An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a...
7119379 Semiconductor device  
A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively...
7112865 Diode and method for manufacturing the same  
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode...
7049663 ESD protection device with high voltage and negative voltage tolerance  
An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first...
6992362 Semiconductor with high-voltage components and low-voltage components on a shared die  
A method and apparatus for increasing a breakdown voltage of a semiconductor device. The semiconductor device is constructed within an epitaxial tub of a first conductivity type formed within a...
6943406 Semiconductor device  
According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type...
6943410 High power vertical semiconductor device  
A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high...
6870201 High voltage resistant edge structure for semiconductor components  
The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones...
6815793 Body of a semiconductor material with a reduced mean free path length  
A body ( 1 ) consisting of a doped semiconductor material with a pn junction ( 10 ) and an area ( 2 ) of reduced mean free path length (λr) for free charge carriers is disclosed. Said area ( 2 )...
6787873 Semiconductor device for providing a noise shield  
A first guard ring formed by high concentration ion diffusion is established around the transistor formation region of the semiconductor substrate. A second guard ring is established around the...
6770917 High-voltage diode  
A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a...
6750506 High-voltage semiconductor device  
A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating...
6724042 Super-junction semiconductor device  
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or...
6724063 Photodiode and photodiode module  
Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction...
6693327 Lateral semiconductor component in thin-film SOI technology  
A lateral semiconductor element ( 10 ) in thin-film SOI technology comprises an insulator layer ( 14 ) which rests on a substrate ( 12 ) and is buried under a thin silicon film ( 16 ), on top of...
6646304 Universal semiconductor wafer for high-voltage semiconductor components  
A universal semiconductor wafer for high-voltage semiconductor components includes at least one layer of a first conductivity type which is provided on a semiconductor substrate of the first...
6639270 Non-volatile memory cell  
A non-volatile memory cell includes a MOS transistor having a ring arrangement and comprising a floating gate, a center electrode at a center of the ring arrangement and surrounding the floating...
6621122 Termination structure for superjunction device  
A termination structure for a superjunction device on which the net charge between P pylons in an N − termination region is intentionally unbalanced and is negative. The P pylons in the...
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein  
A power semiconductor device including first and second assembly units. The first assembly of units includes a first semiconductor region of a second conductivity type selectively formed in a first...
6603186 Bipolar transistor with base drive circuit protection  
An n+ type emitter region and a p-type base region are formed in contact with one main surface of an n-type collector region, a p-type cathode region is formed in a ring shape in contact with the...
6570251 Under bump metalization pad and solder bump connections  
The present invention relates to an improved method of forming and structure for under bump metallurgy (“UBM”) pads for a flip chip which reduces the number of metal layers and requires the use...
6566726 Semiconductor device and power converter using the same  
To reduce the field intensity on the termination surface, almost not affecting the on-characteristic, a drift layer is made of two layers, an n-layer and n − layer, and a termination region is...
6525389 High voltage termination with amorphous silicon layer below the field plate  
A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two...
6525390 MIS semiconductor device with low on resistance and high breakdown voltage  
The invention provides a semiconductor device, manufactured with low manufacturing costs, that prevents the breakdown voltage from lowering. The semiconductor device according to the invention...
6492689 Semiconductor device switching regulator used as a DC regulated power supply  
In a driving power IC including a starter circuit comprising a main-switch (MS) transistor, a starter switch (SS) for starting the MS transistor and a start resistor (or a resistor element) SR, the...
6489666 Semiconductor device with improved heat suppression in peripheral regions  
A semiconductor device ( 102 ) comprises an N type semiconductor substrate ( 1 ). A P layer ( 22 ) is formed in a first surface (S 1 ) of the semiconductor substrate ( 1 ), and a P layer ( 23 ) is...
6486524 Ultra low Irr fast recovery diode  
A FRED device having an ultralow I rr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P...
6455911 Silicon-based semiconductor component with high-efficiency barrier junction termination  
A silicon-based semiconductor component includes a high-efficiency barrier junction termination. In the semiconductor component, a silicon semiconductor region takes on the depletion region of an...
6441455 Low dosage field rings for high voltage semiconductor device  
The active area of a semiconductor die is surrounded by a plurality of concentrically spaced ring shaped P type diffusions. The diffusions have a low concentration produced by a total boron implant...
6369424 Field effect transistor having high breakdown withstand capacity  
A field effect transistor having a high breakdown withstand capacity is provided. An active region 7 a is surrounded by a fixed potential diffusion layer 16 , and a channel region 15 is formed...
6252289 Electrical contact and housing for use as an interface between a testing fixture and a device under test  
An electrical contact, preferably made from a gold-plated, beryllium-copper flat stock which allows radio-frequency signal to pass with low noise, is provided within a housing. The electrical...
6215168 Doubly graded junction termination extension for edge passivation of semiconductor devices  
A silicon semiconductor die comprises a heavily doped silicon substrate and an upper layer comprising doped silicon of a first conductivity type disposed on the substrate. The upper layer includes...
6215167 Power semiconductor device employing field plate and manufacturing method thereof  
A power semiconductor device having an breakdown voltage improving structure and a manufacturing method thereof are provided. A collector region and a base region create a pn junction between them....
6198126 Semiconductor device and power converter using same  
A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further...
6177713 Free wheel diode for preventing destruction of a field limiting innermost circumferential layer  
An anode electrode metal layer composed of aluminum is formed in a region on the inner side than an anode layer formed on a main surface of a semiconductor substrate. Thus, an impurity diffusion...
6166418 High-voltage SOI thin-film transistor  
A high-voltage SOI thin-film transistor includes a semiconductor thin film of a first conductivity type which is embedded in an insulator layer disposed on a semiconductor body. The semiconductor...
6150702 Lateral high-voltage semiconductor device having an outwardly extended electrode  
The breakdown strength of a lateral diode using a field plate is improved. There are provided a track-like first field plate connected to an anode electrode, a track-like second field plate formed...
6078085 Semiconductor integrated circuit and layout apparatus in which guard-ring is interposed between input-output circuits  
A semiconductor integrated circuit is made up of a plurality of input-output circuit portions which are aligned at irregular intervals between a core portion and an external portion, a first...
6064103 Device with a P-N junction and a means of reducing the risk of breakdown of the junction  
The arrangement with a pn-junction and the measure for reducing the risk of a breakdown of the junction is composed of a combination of a field plate (4) and a stop electrode respectively having a...
6023092 Semiconductor resistor for withstanding high voltages  
A resistor on a semiconductor wafer comprising a silicon substrate, a first doped layer in a predetermined area on the silicon substrate, a second doped layer within a predetermined area of the...
Matches 1 - 50 out of 96 1 2 >