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8183122 Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film  
Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an...
8183551 Multi-terminal phase change devices  
Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified...
8183570 Thin film transistor array panel  
A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are...
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same  
The invention is related to a semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same. For P-type device, the method...
8178380 Method for selectively establishing an electrical connection in a multi-terminal phase change device  
Phase change devices, and particularly multi-terminal phase change devices, include first and second active terminals bridged together by a phase-change material whose conductivity can be modified...
8168518 Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device  
A gate insulating film (13) is formed on a substrate (1) so as to cover a gate electrode (11), and an amorphous silicon film (semiconductor thin film) (15) is further formed. A light absorption...
8168971 Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain  
The invention relates to a semiconductor structure and method of manufacturing and more particularly to a CMOS device with at least one embedded SiGe layer in the source/drain region of the PFET,...
8164080 Diode structures and resistive random access memory devices having the same  
A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode...
8158984 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same  
A thin film transistor (TFT), including a crystalline semiconductor pattern on a substrate, a gate insulating layer on the crystalline semiconductor pattern, the gate insulating layer having two...
8143609 Three-terminal cascade switch for controlling static power consumption in integrated circuits  
A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM...
8120032 Active device array substrate and fabrication method thereof  
A fabrication method of an active device array substrate is disclosed. A first metal material layer, a gate insulation material layer, a channel material layer, a second metal material layer, and a...
8101947 System and method for manufacturing a thin-film device  
A thin-film device includes a plurality of circuit components defining an operational region of the thin-film device, an unpatterned channel portion (108, 340) disposed on the plurality of circuit...
8093593 Semiconductor device having multichannel transistor  
A first shape of semiconductor region having on its one side a plurality of sharp convex top-end portions is formed first and a continuous wave laser beam is used for radiation from the above...
8088634 Methods of adding pads and one or more interconnect layers to the passivated topside of a wafer including connections to at least a portion of the integrated circuit pads thereon  
A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The...
8089065 Organic thin film transistors  
A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric...
8089067 Semiconductor device  
A self emission silicon emission display is provided at a low price, which contains silicon and oxygen which exist in abundance on the earth as the main component and which can be easily formed by...
8058649 Thin-film transistor and method of manufacturing the same  
In one embodiment, a thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, first and second electrodes and a protective layer. The semiconductor pattern is formed on the...
8049223 Semiconductor device with large blocking voltage  
A junction FET having a large gate noise margin is provided. The junction FET comprises an n− layer forming a drift region of the junction FET formed over a main surface of an n+ substrate made o...
7994903 Display device and vehicle  
A vehicle has a display device which widens the field of view (visible area) reflected by a side mirror or a back mirror mounted on the vehicle. To enable a driver driving the vehicle to confirm...
7981715 MEMS/NEMS structure comprising a partially monocrystalline anchor and method for manufacturing same  
The invention relates to a method for producing a MEMS/NEMS structure from a substrate made in a monocrystalline semiconductor material, the structure comprising a flexible mechanical element...
7977182 Method of manufacturing MISFET with low contact resistance  
Described herein is a method of manufacturing a semiconductor device realizing higher performance by reducing contact resistance of an electrode. In the method, a gate insulating film, a gate...
7943929 Thin film transistor and method of fabricating the same  
A thin film transistor and method of fabricating the same are provided. The thin film transistor includes: a metal catalyst layer formed on a substrate, and a first capping layer and a second...
7928436 Methods for forming germanium-on-insulator semiconductor structures using a porous layer and semiconductor structures formed by these methods  
A semiconductor structure that includes a monocrystalline germanium-containing layer, preferably substantially pure germanium, a substrate, and a buried insulator layer separating the...
7923724 Phase change memory that switches between crystalline phases  
A phase change memory may transition between two crystalline states. In one embodiment, the phase change material is a chalcogenide which transitions between face centered cubic and hexagonal...
7915520 Photoelectric conversion device and manufacturing method thereof  
A photoelectric conversion device comprising: a pin-type photoelectric conversion layer constituted of a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer,...
7915103 Method for fabricating a flat panel display  
The method for fabricating a flat panel display includes performing a first crystallization process to re-crystallize an amorphous silicon layer on a glass substrate to make the amorphous silicon...
7910924 Liquid crystal display apparatus and manufacturing method therefor  
A liquid crystal apparatus is provided wherein the liquid crystal layer comprises a section formed by polymerizing a polymerizable compound in the presence of a liquid crystal by selectively...
7902557 Semiconductor light emitting device and a method of manufacturing the same  
Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically...
7898042 Two-terminal switching devices and their methods of fabrication  
Two-terminal switching devices characterized by high on/off current ratios and by high breakdown voltage are provided. These devices can be employed as switches in the driving circuits of active...
7897966 Method for manufacturing flat substrates  
For avoiding the metallic inner surface of a PECVD reactor to influence thickness uniformity and quality uniformity of a μc-Si layer (19) deposited on a large-surface substrate, (15) before each ...
7893433 Thin films and methods of making them  
Thin, smooth silicon-containing films are prepared by deposition methods that utilize a silicon containing precursor. In preferred embodiments, the methods result in Si-containing films that are...
7875529 Semiconductor devices  
Methods, devices, modules, and systems providing semiconductor devices in a stacked wafer system are described herein. One embodiment includes a first wafer for NMOS transistors in a CMOS...
7875511 CMOS structure including differential channel stressing layer compositions  
A CMOS structure includes an n-FET device comprising an n-FET channel region and a p-FET device comprising a p-FET channel region. The n-FET channel region includes a first silicon material layer...
7838886 Thin film transistor array panel  
A thin film transistor array panel, in which a middle storage electrode and a storage electrode overlapping a drain electrode of a thin film transistor thereby forming a storage capacitance are...
7800195 Semiconductor apparatus having temperature sensing diode  
A semiconductor apparatus is provided. The semiconductor apparatus includes a semiconductor substrate and a temperature sensing diode that is disposed on a surface part of the semiconductor...
7781765 Mask for crystallizing polysilicon and a method for forming thin film transistor using the mask  
A mask for forming polysilicon has a first slit region where a plurality of horizontal slit patterns are arranged in the vertical direction while bearing the same width, a second slit region where...
7777226 Polycrystalline silicon thin film, fabrication method thereof, and thin film transistor without directional dependency on active channels fabricated using the same  
A polycrystalline silicon thin film to be used in display devices, the thin film comprising adjacent primary grain boundaries that are not parallel to each other and do not contact each other,...
7768002 Transparent organic thin film transistor  
A transparent organic thin film transistor, which contains a p-type organic semiconductor material employed in a semiconductor active layer of the transparent organic thin film transistor, wherein...
7768587 Array substrate for liquid crystal display device and method of manufacturing the same  
An array substrate for a liquid crystal display device includes a substrate, a gate line on the substrate, a data line crossing the gate line to define a pixel region, a thin film transistor...
7755085 Semiconductor device and method for fabricating same  
A semiconductor device has an IC chip with a thickness of equal to or less than 100 μm and includes a semiconductor substrate. A device forming region is within the depth of approximately equal to ...
7745822 Thin film transistor and thin film transistor substrate including a polycrystalline semiconductor thin film having a large heat capacity part and a small heat capacity part  
A TFT and the like capable of realizing performances such as a low threshold voltage value, high carrier mobility and a low leak current easily. A TFT consists of a polycrystalline Si film having a...
7745268 Method for manufacturing a semiconductor device with irradiation of single crystal semiconductor layer in an inert atmosphere  
To provide a semiconductor device with high performance and low cost and a manufacturing method thereof. A first region including a separated (cleavage) single-crystal semiconductor layer and a...
7745935 Method to create super secondary grain growth in narrow trenches  
The present invention relates to a method for obtaining enlarged Cu grains in small trenches. More specifically it related to a method for creating enlarged copper grains or inducing super...
7737448 Thin film transistor array panel and manufacture thereof  
A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line...
7728327 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material  
Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor...
7700947 Semiconductor device  
A metallic element is effectively removed from a semiconductor film crystallized by using the metallic element. The concentration distribution of phosphorous or antimony in the depth direction of...
7655938 Phase change memory with U-shaped chalcogenide cell  
A phase change memory may be made of a chalcogenide material having a U-shape. The U-shaped chalcogenide may transition between amorphous and crystalline phases in an upper part of a vertical...
7642178 Semiconductor device, method for manufacturing the same and method for evaluating the same  
A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second...
7629260 Organosilane hardmask compositions and methods of producing semiconductor devices using the same  
Provided herein are hardmask compositions that include an organosilane polymer prepared by the reaction of one or more compounds of Formula (I) Si(OR1)(OR2)(OR3)R4 wherein R1, R2 and R3 may each...
7629617 Light-emitting device  
The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a...
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