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8114468 Methods of forming a non-volatile resistive oxide memory array  
A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising...
8080858 Semiconductor component having a space saving edge structure  
A Semiconductor component having a space saving edge structure is disclosed. One embodiment provides a first side, a second side, an inner region, an edge region adjoining the inner region in a...
8034655 Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays  
A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Insulative material is deposited over the...
7944035 Double sided semiconduction device with edge contact and package therefor  
A semiconductor die has devices such as MOSgated devices, diodes and the like formed into the top and bottom surfaces of the die. One terminal of each of the devices terminal in the interior center...
7884442 Integrated circuit resistor  
An integrated circuit resistor is provided that comprises a mesa 14 between electrical contacts 16 and 18. The electrical resistance between electrical contacts 16 and 18 is selectively increased...
7782577 MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture  
A magnetic random access memory structure comprising an anti-ferromagnetic layer structure, a crystalline ferromagnetic structure physically coupled to the anti-ferromagnetic layer structure and a...
7772580 Integrated circuit having a cell with a resistivity changing layer  
In an embodiment of the invention, an integrated circuit having a cell is provided. The cell may include a field effect transistor structure which includes a gate stack and a resistivity changing...
7741178 Method for fabricating vertical channel transistor in semiconductor device  
A method for fabricating a vertical channel transistor in a semiconductor device includes forming a plurality of pillars arranged in a first direction and a second direction crossing the first...
7629665 Semiconductor component with a channel stop zone  
A semiconductor component has a semiconductor body (100) having a basic doping and a first and second side, an inner region (103) arranged between the first and second sides, and an edge region...
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation  
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7515454 CBRAM cell and CBRAM array, and method of operating thereof  
According to one embodiment of the present invention, a CBRAM cell includes a solid electrolyte block having at least three solid electrolyte contacting areas, electrodes electrically connected to...
7498651 Junction termination structures for wide-bandgap power devices  
Disclosed are a variety of junction termination structures for high voltage semiconductor power devices. The structures are specifically aimed at providing a high breakdown voltage while being...
7385273 Power semiconductor device  
A power semiconductor device that includes a plurality of gate structure each having a gate insulation of a first thickness, and a termination region, the termination including a field insulation...
7183626 Passivation structure with voltage equalizing loops  
A semiconductor device which includes a passivation structure formed with a conductive strip of resistive material that crosses itself once around the active region of the device to form a first...
7135742 Insulated gate type semiconductor device and method for fabricating same  
An insulated gate type semiconductor device comprised of a semiconductor layer serving as an active region isolated from a semiconductor substrate by a substrate isolation insulating film and a...
7119379 Semiconductor device  
A semiconductor device disclosed herein comprises: a first base region which is of a first conductivity type; a second base region which is of a second conductivity type and which is selectively...
7098495 Magnetic tunnel junction element structures and methods for fabricating the same  
Magnetic tunnel junction (“MTJ”) element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amo...
7084478 Load resistor with dummy contact substantially free of charge build up during etching process  
A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to...
6946717 High voltage semiconductor device  
A compound semiconductor device is comprising a compound semiconductor substrate (219) having a ground plane (205); an active element (201) disposed on the substrate; a passive element (211)...
6943406 Semiconductor device  
According to the present invention, there is provided a semiconductor device having, a semiconductor substrate having a surface on which an insulating layer is formed, a first-conductivity-type...
6879005 High withstand voltage semiconductor device  
A high withstand voltage semiconductor device, comprises: a substrate, a semiconductor layer formed on an upper surface of the substrate, a lateral semiconductor device formed in a surface region...
6873028 Surge current chip resistor  
A chip resistor comprising a substrate having opposite parallel symmetrical first and second surfaces, a central longitudinal plane of symmetry, separate and spaced first and second resistive...
6864521 Method to control silver concentration in a resistance variable memory element  
A method for controlling silver doping of a chalcogenide glass in a resistance variable memory element is disclosed herein. The method includes forming a thin metal containing layer having a...
6831312 Amorphous alloys for magnetic devices  
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at...
6750506 High-voltage semiconductor device  
A high-voltage semiconductor device includes: a drain region; a metal electrode electrically connected to the drain region; and electrically floating plate electrodes formed on a field insulating...
6724021 Semiconductor devices and their peripheral termination  
A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone (20) between a first (21, 23, 31a) and second (22) device regions adjacent to...
6700175 Vertical semiconductor device having alternating conductivity semiconductor regions  
There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n−-type semiconductor region and a p−-type semiconductor region are arr...
6680515 Lateral high voltage transistor having spiral field plate and graded concentration doping  
A lateral high voltage transistor device is disclosed. The transistor includes a gate, a drain, and a source. The drain is located apart from the gate to form an intermediate drift region. The...
6624472 Semiconductor device with voltage sustaining zone  
A semiconductor body has first and second opposed major surfaces. A first region meets the first major surface and at least one second region meets the second major surface. The semiconductor body...
6614088 Breakdown improvement method and sturcture for lateral DMOS device  
In a lateral DMOS device 10 breakdown voltage is controlled by a voltage divider 50 coupled at opposite ends to the source 18 and drain 19. The divider node N1 between first and second resistive...
6608351 Semiconductor device comprising a high-voltage circuit element  
The performance of high-voltage devices is often influenced by charge-creep effects in the package. In order to avoid the resultant degradation, a bleeder may be used between the device and the...
6525390 MIS semiconductor device with low on resistance and high breakdown voltage  
The invention provides a semiconductor device, manufactured with low manufacturing costs, that prevents the breakdown voltage from lowering. The semiconductor device according to the invention...
6492689 Semiconductor device switching regulator used as a DC regulated power supply  
In a driving power IC including a starter circuit comprising a main-switch (MS) transistor, a starter switch (SS) for starting the MS transistor and a start resistor (or a resistor element) SR, the...
6462377 Insulated gate field effect device  
A semiconductor body (10) has first and second opposed major surfaces (10a and 10b), with a first region (11) of one conductivity type and a plurality of body regions (32) of the opposite...
6452245 Semiconductor device  
The present invention provides a semiconductor device capable of improving a withstand voltage for a wire placed in the neighborhood of a contact. When the direction in which a wiring layer extends...
6353252 High breakdown voltage semiconductor device having trenched film connected to electrodes  
A plurality of trenches are formed in a drift region between a p-type body region and an-type buffer region. A silicon oxide film is formed on the side and bottom of each of the trenches, and an...
6201290 Resistor having moisture resistant layer  
A resistor comprising a substrate typically made of aluminum, a pair of top electrode layers made of a thin noble metal film disposed on both ends of the top face of the substrate, and a resistance...
6198126 Semiconductor device and power converter using same  
A high voltage semiconductor device is provided with a p layer which forms a main pn-junction, a plurality of p layers which surround the p layer in a ring form, a ring-like n+ layer which further...
6166418 High-voltage SOI thin-film transistor  
A high-voltage SOI thin-film transistor includes a semiconductor thin film of a first conductivity type which is embedded in an insulator layer disposed on a semiconductor body. The semiconductor...
6064094 Over-voltage protection system for integrated circuits using the bonding pads and passivation layer  
A protection system for integrated circuits which prevents inadvertent damage caused by over-voltage power surges by extending the passivation layer of an integrated circuit over the bonding pads...
6046479 Electronic devices comprising thin-film transistors  
A large-area electronic device, such as an AMLCD, has switching TFTs (Tp) in a matrix and circuit TFTs (Ts) in a peripheral drive circuit. Both the TFTs (Tp, Ts) comprise a field-relief region...
5994189 High withstand voltage semiconductor device and manufacturing method thereof  
An n- layer is formed on a main surface of a p-type semiconductor substrate. A p- diffusion region is formed at a surface of n- layer. A p diffusion region is formed contiguous to one end of p-...
5880513 Asymmetric snubber resistor  
An asymmetric snubber resistor in accordance with the present invention includes a cathode, an N+ region, an N- region, a plurality of P+ regions, and an anode. The N+ region is disposed over the...
5864167 Semiconductor device  
In a MOSFET or other high voltage device, an annular channel stopper (4) extends around the outer periphery (14) of a body portion (11) with which a device region (15) forms a p-n junction (5)...
5844293 Semiconductor device with improved dielectric breakdown strength  
A semiconductor device is provided with improved resistance to dielectric breakdown due to high voltage resulting from static electricity applied to a dielectric film thereof, where a conductive...
5637908 Structure and technique for tailoring effective resistivity of a SIPOS layer by patterning and control of dopant introduction  
An increase in breakdown voltage of a semiconductor device upon which a layer of high resistance material, such as SIPOS, has been formed is achieved by controllably modifying the physical...
5627385 Lateral silicon carbide transistor  
A lateral silicon carbide transistor (10) utilizes a modulated channel region (18) to form an accumulation region that facilitates a low on-resistance. A doped region of the channel layer forms a...
5554878 Intergrated high-voltage resistor including field-plate layers  
A high-voltage resistor integrated on a semiconductor substrate with opposite sign conductivity, and being of a type with one end connected to the substrate and another end connected to a lower...
5552625 Semiconductor device having a semi-insulating layer  
A semiconductor device has a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type contacted by respective first and second...
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