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7629665 Semiconductor component with a channel stop zone  
A semiconductor component has a semiconductor body ( 100 ) having a basic doping and a first and second side, an inner region ( 103 ) arranged between the first and second sides, and an edge region...
7595532 Semiconductor memory devices and methods of forming the same  
A semiconductor memory device includes a semiconductor substrate including an insulating layer, a charge storage region of a first conductivity type on the insulating layer, and an insulating film...
7592683 Semiconductor device with improved electrostatic tolerance  
A semiconductor device comprises a P − -type semiconductor substrate ( 15 ), an N − -type semiconductor substrate ( 21 ) formed on the P − -type semiconductor substrate ( 15 ), an upper...
7589393 Semiconductor structure of a high side driver for two high voltage nodes with partially linked deep wells and method for manufacturing the same  
A semiconductor structure of a high side driver includes an ion-doped junction. The ion-doped junction includes a substrate, a first deep well and a second deep well, a first heavy ion-doped region...
7560787 Trench field plate termination for power devices  
In accordance with an embodiment of the invention, a semiconductor power device includes an active region configured to conduct current when the semiconductor device is biased in a conducting...
7521342 Semiconductor structure with high-voltage sustaining capability and fabrication method of the same  
A semiconductor structure with high-voltage sustaining capability. A semiconductor structure with high-voltage sustaining capability includes a first well region of a first conductivity type. A...
7521774 Semiconductor diode and method for the production thereof  
In a semiconductor system 20 made up of multiple sublayers, a sublayer over the largest part of a cross-sectional area BC in the interior of the semiconductor system borders immediately on the...
7411272 Semiconductor device and method of forming a semiconductor device  
A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one...
7355261 Thin film device, thin film device module, and method of forming thin film device module  
A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 10 8 Ω·cm to 10 10 ...
7355257 Semiconductor superjunction device  
A semiconductor superjunction device has a superjunction structure formed in a drift region of the device. The superjunction structure has alternately arranged n-type regions and p-type...
7327008 Structure and method for mixed-substrate SIMOX technology  
The present invention provides a semiconductor structure that includes a substrate having a crystal lattice; a first structure formed in a first region of the substrate, the first structure...
7327007 Semiconductor device with high breakdown voltage  
A technique is provided which allows easy achievement of a semiconductor device with desired breakdown voltage. In a high-potential island region defined by a p impurity region, an n + impurity...
7321142 Field effect transistor  
On an SiC single crystal substrate, an electric field relaxation layer and a p− type buffer layer are formed. The electric field relaxation layer is formed between the p− type buffer layer and...
7304356 IGBT or like semiconductor device of high voltage-withstanding capability  
A multiple-cell insulated-gate-bipolar-transistor chip is disclosed which includes a semiconductor substrate having formed therein a p + -type collector region and an n − -type base region, with...
7301179 Semiconductor device having a high breakdown voltage transistor formed thereon  
An ion-through region 100, 102 is provided as a first opening in a passivation film 90 on a source electrode 70 and a drain electrode 80 . The passivation film 90 is coated with a sealing...
7279768 Semiconductor device for overvoltage protection  
In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across an upper...
7259440 Fast switching diode with low leakage current  
A fast switching diode includes an n− layer having an upper surface and a lower surface and a first edge and a second edge, the second edge provided on an opposing side of the first edge. A...
7244975 High-voltage device structure  
A high-voltage device structure includes a high-voltage device disposed on a semiconductor substrate. The semiconductor includes an active region and an isolation region, and the high-voltage...
7230310 Super-junction voltage sustaining layer with alternating semiconductor and High-K dielectric regions  
A semiconductor power device includes a device feature layer, a substrate contact layer and a voltage-sustaining layer between them. The voltage-sustaining layer includes alternating semiconductor...
7180133 Method and structure for addressing hot carrier degradation in high voltage devices  
In a method and structure for a high voltage LDMOS with reduced hot carrier degradation, the thick field oxide is eliminated and a reduced surface field achieved instead by including adjacent p+...
7135751 High breakdown voltage junction terminating structure  
A high breakdown voltage junction terminating structure having a loop-like RESURF structure formed on a SOI substrate is disclosed. A lateral IGBT, a lateral FWD, an output stage element and a...
7106628 Semiconductor device having enhanced breakdown voltage  
A semiconductor device has: a main circuit including a plurality of MOS transistors operating at a first voltage; a memory requiring an operation at a second voltage higher than the first voltage;...
7081656 CMOS constructions  
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more...
7049663 ESD protection device with high voltage and negative voltage tolerance  
An electrostatic discharge protection device with high voltage and negative voltage tolerance is provided. The electrostatic discharge protection device comprises: a first type substrate; a first...
6989566 High-voltage semiconductor device including a floating block  
A high-voltage semiconductor device includes: a semiconductor region; a doped contact region; an isolating region; a metal electrode which is electrically connected with the doped contact region;...
6921945 Semiconductor device with structure for improving breakdown voltage  
A semiconductor layer ( 10 ) provided on a BOX (buried oxide) layer ( 2 ) includes a first P-type region ( 11 ), an N + -type region ( 12 ), and an N − type region ( 13 ) which together form a...
6900518 Semiconductor device  
A power semiconductor device has an active region that includes a drift region. At least a portion of the drift region is provided in a membrane which has opposed top and bottom surfaces. In one...
6873012 SOI component  
A semiconductor component has a semiconductor substrate, an insulation layer located on the semiconductor substrate, and a semiconductor layer that is arranged on the insulation layer. A first...
6847080 Semiconductor device with high and low breakdown voltage and its manufacturing method  
The objective of this invention is to provide a semiconductor device and its manufacturing method with which the offset can be kept fixed even in high breakdown voltage MOS transistors, and that...
6828605 Field-effect-controlled semiconductor component and method of fabricating a doping layer in a vertically configured semiconductor component  
A field-effect-controllable semiconductor component has at least one source zone and at least one drain zone of a first conductivity type, and at least one body zone of a second conductivity type....
6815793 Body of a semiconductor material with a reduced mean free path length  
A body ( 1 ) consisting of a doped semiconductor material with a pn junction ( 10 ) and an area ( 2 ) of reduced mean free path length (λr) for free charge carriers is disclosed. Said area ( 2 )...
6768170 Superjunction device with improved avalanche capability and breakdown voltage  
A superjunction device has a plurality of equally spaced P columns in an N − epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge...
6740952 High withstand voltage semiconductor device  
A semiconductor device includes a stable high withstand voltage lateral MISFET device which suppresses a gradual withstand voltage drop under high voltage and humidity conditions. In a MISFET...
6724021 Semiconductor devices and their peripheral termination  
A semiconductor device, such as a power MOSFET, Schottky rectifier or p-n rectifier, has a voltage-sustaining zone ( 20 ) between a first ( 21, 23, 31 a ) and second ( 22 ) device regions adjacent...
6717230 Lateral device with improved conductivity and blocking control  
An LDMOS device is made on a semiconductor substrate 112 . It has an N+ source and drain regions 120, 132 are formed within a P well region 122 . An interlevel dielectric layer 140 ...
6696741 High breakdown voltage PN junction structure, and related manufacturing process  
PN junction structure including a first junction region of a first conductivity type, and a second junction region of a second conductivity type, wherein between said first and second junction...
6683363 Trench structure for semiconductor devices  
A MOS trench structure integrated with a semiconductor device for enhancing the breakdown characteristics of the semiconductor device, comprises a semiconductor substrate, a plurality of parallel...
6653669 Device for the adjustment of circuits after packaging  
An integrated circuit includes an adjustment resistor, and at least one control transistor connected to a first voltage reference. An adjustment element is connected in parallel with the adjustment...
6649995 Semiconductor device and method of manufacturing the same  
A Schottky diode that achieves a predetermined reverse-direction breakdown voltage even if a state of a surface in a vicinity of a Schottky junction interface changes due to a welding of a bonding...
6621116 Enhanced EPROM structures with accentuated hot electron generation regions  
An EPROM structure includes a NMOS transistor integrated with a capacitor. The terminal names of the NMOS transistor follow the conventional nomenclature: drain, source, body and gate. The gate of...
6607972 Method for producing an edge termination suitable for high voltages in a basic material wafer prefabricated according to the principle of lateral charge compensation  
An edge termination is produced that is capable of handling high voltages. The edge termination is produced in a base material wafer that is produced in accordance with the principle of lateral...
6600206 High voltage semiconductor device having high breakdown voltage isolation region  
A high voltage semiconductor device is provided. The high voltage semiconductor device includes a tow voltage region, a high voltage region, and a high breakdown voltage isolation region. The high...
6583453 Semiconductor device having a voltage-regulator device  
A semiconductor device providing an improved effect of suppressing variation with time of reverse breakdown voltage applied to PN junction, particularly, a voltage-regulator device, is provided....
6486541 Semiconductor device and fabrication method  
A thin-film semiconductor device comprising at least a semiconductor element and a wiring is disclosed. A thin film of a protective insulating material is formed on the lower surface of the...
6476457 Semiconductor device with drift layer  
A semiconductor device includes a semiconductor substrate having a first conductive type impurity, a well having a second conductive type impurity formed in a predetermined region of the...
6469359 Semiconductor device and a method for production thereof  
A semiconductor device of planar structure has a pn-junction ( 10 ) formed by a first layer ( 1 ) doped according to a first conductivity type, n or p, and on top thereof a second layer ( 2 ) doped...
6462382 MOS type semiconductor apparatus  
A MOS type semiconductor apparatus is provided which includes a main MOS type semiconductor device, an internal control circuit connected between a control input terminal (G) and a control input...
6445054 Semiconductor device  
A semiconductor device comprises an active area with a voltage termination structure located adjacent to the active area at an edge portion of the device. The edge portion comprises a substrate...
6439514 Semiconductor device with elements surrounded by trenches  
Pch-MOS transistors to which a power supply potential is applied are respectively surrounded by first trenches, and Nch-MOS transistors to which a ground potential is applied are respectively...
6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device  
A power device has its main junction formed in a central portion of an N-type substrate. A P-type layer is formed in a peripheral surface portion of the substrate. A P − -type RESURF layer of a...
Matches 1 - 50 out of 151 1 2 3 4 >