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7615839 |
Semiconductor device and manufacturing method thereof
Since VF and IR characteristics of a Schottky barrier diode are in a trade-off relationship, there has heretofore been a problem that an increase in a leak current is unavoidable in order to...
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7612426 |
Schottky barrier diode and diode array
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and...
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7476956 |
Gallium nitride based diodes with low forward voltage and low reverse current operation
New Group III based diodes are disclosed having a low on state voltage (V f ) and structures to keep reverse current (I rev ) relatively low. One embodiment of the invention is Schottky barrier...
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7470940 |
Ultraviolet detector
An UV detector, comprising: a sapphire substrate; a high temperature AlN buffer layer grown on the sapphire substrate; an intermediate temperature GaN buffer layer grown on the high temperature AlN...
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7453133 |
Silicide/semiconductor structure and method of fabrication
A preferred embodiment of the present invention comprises a dielectric/metal/2 nd energy bandgap (E g ) semiconductor/1 st E g substrate structure. In order to reduce the contact resistance, a...
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7449710 |
Vacuum jacket for phase change memory element
A memory device including a phase change element and a vacuum jacket. The device includes a first electrode element; a phase change element in contact with the first electrode element; an upper...
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7436039 |
Gallium nitride semiconductor device
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer...
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7388272 |
Chip package and producing method thereof
A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on...
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7388271 |
Schottky diode with minimal vertical current flow
A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second...
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7368762 |
Heterojunction photodiode
The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy E g1 . When reverse-biased, the...
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7345350 |
Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias
A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole...
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7262434 |
Semiconductor device with a silicon carbide substrate and ohmic metal layer
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and...
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7211824 |
Organic semiconductor diode
The present invention relates to organic semiconductor diodes, in particular, to the diodes with nonlinear current-voltage characteristics, which are used for power switching, rectifying variable...
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7193291 |
Organic Schottky diode
An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other...
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7176537 |
High performance CMOS with metal-gate and Schottky source/drain
A semiconductor device having a metal/metal silicide gate and a Schottky source/drain and a method of forming the same are provided. The semiconductor device includes a gate dielectric overlying a...
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7141861 |
Semiconductor device and manufacturing method there
A problem in related art according to which an increase in leak current cannot be avoided in order to obtain a low forward voltage VF as forward voltage VF and reverse leak current IR...
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7105907 |
Gallium nitride compound semiconductor device having schottky contact
A buffer layer, an undoped gallium nitride layer, and an n-type gallium nitride active layer are formed on a sapphire substrate. Ohmic contacts and a Schottky contact are then formed on the n-type...
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7084475 |
Lateral conduction Schottky diode with plural mesas
A lateral conduction Schottky diode includes multiple mesa regions upon which Schottky contacts are formed and which are at least separated by ohmic contacts to reduce the current path length and...
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7084423 |
Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the...
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7071525 |
Merged P-i-N schottky structure
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy...
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7071526 |
Semiconductor device having Schottky junction electrode
A GaN semiconductor device with improved heat resistance of the Schottky junction electrode and excellent power performance and reliability is provided. In this semiconductor device having a...
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7061067 |
Schottky barrier diode
To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a...
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7023030 |
MISFET
A metal insulator semiconductor field effect transistor (MISFET) is disclosed comprising a source layer being made with a material having a source band-gap (EG 2 ) and a source mid-gap value (EGM 2...
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6969900 |
Semiconductor diode capable of detecting hydrogen at high temperatures
A semiconductor diode with hydrogen detection capability includes a semiconductor substrate, a doped semiconductor active layer formed on the substrate and made from a compound having the formula...
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6960782 |
Electronic devices with fullerene layers
Described is an electronic device comprising a junction formed between a first fullerene layer having a first doping concentration and a second fullerene layer having a second doping concentration...
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6949806 |
Electrostatic discharge protection structure for deep sub-micron gate oxide
The present disclosure provides a deep submicron electrostatic discharge (ESD) protection structure for a deep submicron integrated circuit (IC) and a method for forming such a structure. The...
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6949401 |
Semiconductor component and method for producing the same
A method for producing a semiconductor component with adjacent Schottky ( 5 ) and pn ( 9 ) junctions positions in a drift area ( 2, 10 ) of a semiconductor material. According to the method, a...
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6885077 |
Schottky diode
A Schottky diode has a Schottky junction formed by a thin metal layer and/or metal silicide layer at the top side of a doped well in a semiconductor body or substrate. In contrast to the...
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6791154 |
Integrated semiconductor circuit device having Schottky barrier diode
An integrated semiconductor circuit device comprising a diode bridge circuit formed of a Schottky barrier diode and a periphery circuit formed of a MOS transistor which are formed on a single...
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6787871 |
Integrated schottky barrier diode and manufacturing method thereof
An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the...
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6633071 |
Contact on a P-type region
The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of...
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6627967 |
Schottky barrier diode
A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic...
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6610999 |
Multiple stage high power diode
A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface...
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6605868 |
Insulating substrate including multilevel insulative ceramic layers joined with an intermediate layer
An insulating substrate ( 1 ) has insulative ceramic layers ( 2, 3 ) laid one upon another, an intermediate layer ( 4 ) made of a material that is different from a material of the ceramic layers...
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6576973 |
Schottky diode on a silicon carbide substrate
A vertical Schottky diode including an N-type silicon carbide layer of low doping level formed by epitaxy on a silicon carbide substrate of high doping level. The periphery of the active area of...
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6551911 |
Method for producing Schottky diodes and Schottky diodes
A method for producing Schottky diodes having a protective ring in an edge region of a Schottky contact. The protective ring is produced by a protective ring material that is deposited onto a...
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6545298 |
Compound semiconductor rectifier device structure
A rectifier structure that exhibits a low turn-on voltage and allows rapid switching without ringing is provided. The structure utilizes a thin epitaxial layer interposed between the two layers...
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6525389 |
High voltage termination with amorphous silicon layer below the field plate
A termination structure and reduced mask process for its manufacture for either a FRED device or any power semiconductor device comprises at least two concentric diffusion guard rings and two...
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6509651 |
Substrate-fluorescent LED
A substrate-fluorescent LED having a fluorescent-impurity doped substrate and an epitaxial emission structure including an active layer and being made on the substrate. The epitaxial emission...
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6486524 |
Ultra low Irr fast recovery diode
A FRED device having an ultralow I rr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P...
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6452244 |
Film-like composite structure and method of manufacture thereof
On a semiconductor layer 1 consisting of a substrate of a semiconductor single crystal or the like, a metallic layer 2 of a thickness of 20 nm or less is formed. The metallic layer 2 ...
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6396076 |
Test structures for substrate etching
A test structure determines the trench depth from etching in a resistive substrate. The test structure has a first contact and a second contact to the substrate. Between the first and second...
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6362495 |
Dual-metal-trench silicon carbide Schottky pinch rectifier
A dual-metal-trench silicon carbide Schottky pinch rectifier having a plurality of trenches formed in an n-type SiC substrate, with a Schottky contact having a relatively low barrier height on a...
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6320205 |
Edge termination for a semiconductor component, a schottky diode having an edge termination, and a method for producing the schottky diode
An edge termination for a semiconductor component containing a semiconductor body formed of silicon carbide. The edge termination has at least one diode chain that is insulated from the...
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6303998 |
Semiconductor device having a chip mounted on a rectangular substrate
A semiconductor device 14 capable of reducing the warpage in a substrate is provided. A semiconductor chip 12 is mounted on a substrate 10 made of an electro-insulating material by flip-chip...
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6160278 |
Hydrogen-sensitive palladium (PD) membrane/semiconductor schottky diode sensor
In this invention, a new, simple and small-size hydrogen-sensitive palladium (Pd) membrane/semiconductor Schottky diode sensor has been developed and fabricated. First, a high quality undoped GaAs...
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6093952 |
Higher power gallium nitride schottky rectifier
A Schottky high power rectifier having a nitride insulator formed on the surface of a GaN substrate. The nitride insulator increases the electric field breakdown suppression at or near the surface...
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6087702 |
Rare-earth schottky diode structure
A method for forming a Schottky diode structure is disclosed. The method includes the steps of: a) Providing a substrate; b) forming a rare-earth containing layer over the substrate; and c) forming...
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6060757 |
High frequency RF diode with low parasitic capacitance
An RF diode, and method for its manufacture, in which a well, doped n-conductive or p-conductive, is formed in a high-ohmic silicon substrate. A silicon epitaxial layer is provided over a first...
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5961741 |
Metal semiconductor optical device
The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface...
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