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7629626 Semiconductor device having insulated gate bipolar transistor  
One of the aspects of the present invention is to provide a semiconductor device, which includes a semiconductor layer of a first conductive type having first and second surfaces. The semiconductor...
7619284 Over charge protection device  
An over-voltage protection device includes a substrate including an upper surface and a lower surface; a first electrode provided on the upper surface of the substrate; a second electrode provided...
7615863 Multi-dimensional wafer-level integrated antenna sensor micro packaging  
An integrated packaging assembly for an MMIC that uses the semiconductor wafers on which circuit elements are fabricated as the package. The packaging assembly includes a plurality of semiconductor...
7612426 Schottky barrier diode and diode array  
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and...
7612371 Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors  
The present invention addresses detection of charge-induced defects through test structures that can be easily incorporated on a wafer to detect charge-induced damage in the back-end-of-line...
7588958 Schottky barrier diode and manufacturing method thereof  
To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a...
7566935 ESD structure without ballasting resistors  
An electrostatic discharge (ESD) structure connected to a bonding pad in an integrated circuit comprising: a P-type substrate with one or more first P+ regions connected to a low voltage supply...
7566915 Guard ring extension to prevent reliability failures  
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal...
7554164 Semiconductor device having a gap between a gate electrode and a dummy gate electrode  
A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper...
7547586 Method of making a self aligned ion implanted gate and guard ring structure for use in a sit  
A method of making a semiconductor structure for use in a static induction transistor. Three layers of a SiC material are on a substrate with the top layer covered with a thick oxide. A mask having...
7547572 Method of protecting semiconductor chips from mechanical and ESD damage during handling  
A method and apparatus are provided for protecting a semiconductor device from damage. The method includes the steps of providing a active semiconductor device on a surface of the semiconductor...
7538346 Semiconductor device  
A semiconductor device is disclosed. The device includes a substrate and a first wiring layer overlying the substrate. The first wiring layer comprises a first wiring area surrounded by a first...
7525178 Semiconductor device with capacitively coupled field plate  
A termination region of a semiconductor die is provided, which includes one or more field rings arranged in the termination region, one or more metal field plates, and an insulation layer disposed...
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7498651 Junction termination structures for wide-bandgap power devices  
Disclosed are a variety of junction termination structures for high voltage semiconductor power devices. The structures are specifically aimed at providing a high breakdown voltage while being...
7492018 Isolating substrate noise by forming semi-insulating regions  
An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed...
7466005 Recessed termination for trench schottky device without junction curvature  
A trench type Schottky device has a guard ring diffusion of constant depth between the outermost of an active trench and an outer surrounding termination trench. The junction curvature of the guard...
7453128 Semiconductor device and method for fabricating the same  
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in...
7436039 Gallium nitride semiconductor device  
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer...
7417265 Schottky diode structure with enhanced breakdown voltage and method of manufacture  
In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent...
7409660 Method and end cell library for avoiding substrate noise in an integrated circuit  
A method of avoiding substrate noise in an integrated circuit includes steps of receiving as input an integrated circuit design that includes at least a portion of a block for placement and routing...
7408206 Method and structure for charge dissipation in integrated circuits  
Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a...
7397103 Semiconductor with damage detection circuitry  
Disclosed herein are novel damage detection circuitries implemented on the periphery of a semiconductor device. The circuitries disclosed herein enable the easy identification of cracks and...
7394137 Semiconductor device  
A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating...
7391093 Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film  
A semiconductor device has a semiconductor device chip with upper and lower terminal electrodes, and upper and lower frames bonded to the upper and lower terminal electrodes, respectively, with...
7388272 Chip package and producing method thereof  
A chip package including a carrier, a chip, a stiffener and a molding compound is provided. A producing method of the chip package includes the steps of disposing a bottom surface of the chip on...
7307329 Electronic device with guard ring  
An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged...
7276771 Diode and method for manufacturing the same  
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode...
7276743 Retaining ring with conductive portion  
A retaining ring for use with electrochemical mechanical processing is described. The retaining ring has a generally annular body formed with a conductive portion and a non-conductive portion. The...
7274077 Trench transistor  
A trench transistor has a cell array, in which at least one cell array trench ( 2 ) is provided, and an edge structure framing the cell array. An edge trench ( 15 ) spaced apart from the cell array...
7265436 Non-repeated and non-uniform width seal ring structure  
A method of forming an improved seal ring structure is described. A continuous metal seal ring is formed along a perimeter of a die wherein the metal seal ring is parallel to the edges of the die...
7247888 Film forming ring and method of manufacturing semiconductor device  
There is here disclosed a film forming ring including a ring main body being made of an insulating material and formed in an annular shape along an edge of a substrate on which a film forming...
7145211 Seal ring for mixed circuitry semiconductor devices  
In mixed-component, mixed-signal, semiconductor devices, selective seal ring isolation from the substrate and its electrical potential is provided in order to segregate noise sensitive circuitry...
7141860 LDMOS transistor  
An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode...
7135718 Diode device and transistor device  
A semiconductor device having improved breakdown voltage is provided. A diode device of the present invention includes relay diffusion layers provided between guard ring portions. Therefore, a...
7129558 Chip-scale schottky device  
A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for...
7112865 Diode and method for manufacturing the same  
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode...
7098521 Reduced guard ring in schottky barrier diode structure  
Schottky barrier diodes use a dielectric separation region to bound an active region. The dielectric separation region permits the elimination of a guard ring in at least one dimension. Further,...
7091572 Fast recovery diode with a single large area p/n junction  
A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide...
7071525 Merged P-i-N schottky structure  
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy...
7064408 Schottky barrier diode and method of making the same  
A power Schottky rectifier device having pluralities of trenches are disclosed. The Schottky barrier rectifier device includes field oxide region having p-doped region formed thereunder to avoid...
7061067 Schottky barrier diode  
To reduce a reverse leakage current in a Schottky barrier diode with achieving a lower forward voltage Vf and a smaller capacitance than in the related art, a Schottky barrier diode includes a...
7053453 Substrate contact and method of forming the same  
A substrate contact and semiconductor chip, and methods of forming the same. The substrate contact is employable with a semiconductor chip formed from a semiconductor substrate and includes a seal...
7019377 Integrated circuit including high voltage devices and low voltage devices  
An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device. The Schottky barrier diode includes a lightly doped p-well as guard ring while the low voltage devices...
6995446 Isolating phase change memories with schottky diodes and guard rings  
A phase change memory may be made using an isolation diode in the form of a Shottky diode between a memory cell and a word line. To reduce the leakage currents associated with the Shottky diode, a...
6949454 Guard ring structure for a Schottky diode  
A Schottky device having a substrate layer of a first conductivity type having a surface, and a guard ring formed over the surface of the substrate layer and also surrounding a barrier region of...
6949401 Semiconductor component and method for producing the same  
A method for producing a semiconductor component with adjacent Schottky ( 5 ) and pn ( 9 ) junctions positions in a drift area ( 2, 10 ) of a semiconductor material. According to the method, a...
6940131 MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication  
The present invention includes a MOS device ( 100 ) that has a P-type substrate ( 102 ) and an N-type drain region ( 104 ) formed within the substrate ( 102 ). An annular N-type source region ( 106...
6936905 Two mask shottky diode with locos structure  
A power Schottky rectifier device and method of making the same are disclosed. The Schottky rectifier device including a LOCOS structure and two p-type doping regions, which are positioned one...
6858912 Photodetector circuit  
A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard...
Matches 1 - 50 out of 171 1 2 3 4 >