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7538367 |
Avalanche photodiode
The present invention provides an avalanche photodiode capable of raising productivity. An n-type InP buffer layer, an n-type GaInAs light absorption layer, an n-type GaInAsP transition layer, an...
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7511357 |
Trenched MOSFETs with improved gate-drain (GD) clamp diodes
A MOSFET device that includes a first Zener diode connected between a gate metal and a drain metal of said semiconductor power device for functioning as a gate-drain (GD) clamp diode. The GD clamp...
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7071525 |
Merged P-i-N schottky structure
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy...
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7015556 |
Packaging substrate and manufacturing method thereof, integrated circuit device and manufacturing method thereof, and saw device
A basic portion layer 21 of a substrate electrode 12 a connected to a projecting electrode 13 electrically and mechanically on a substrate member of ceramics. The substrate member on which...
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7012337 |
Semiconductor device including a photosensitive resin covering at least a portion of a substrate having a via hole
A semiconductor device includes a substrate with a via hole. An electrode is formed on a surface of the substrate so that a portion of the electrode extends through the via hole. A photosensitive...
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6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of...
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6921952 |
Torsion spring for MEMS structure
A torsion spring for a MEMS structure has a plurality of beams, each beam having two ends wherein both ends are fixed to a predetermined area, and at least one connection bar disposed at a right...
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6855587 |
Gate-controlled, negative resistance diode device using band-to-band tunneling
A new gate-controlled, negative resistance diode device is achieved. The device comprises, first, a semiconductor layer in a substrate. The semiconductor layer contains an emitter region and a...
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6759744 |
Electronic circuit unit suitable for miniaturization
The electronic circuit unit of the present invention includes first and second insulating substrates on respective surfaces of which wiring patterns are formed, and thick-film passive elements...
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6274922 |
Fabrication of high power semiconductor device with a heat sink and integration with planar microstrip circuitry
A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar...
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6075276 |
ESD protection device using Zener diodes
A semiconductor device is provided which includes a first conductivity type semiconductor substrate, a second conductivity type Zener region formed in a surface layer of the first conductivity type...
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5917227 |
Light-emitting-diode array and light-emitting-diode element
A light-emitting-diode array includes a non-doped compound semiconductor layer between a substrate and a first compound semiconductor layer. A plurality of isolation regions extend from the first...
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5612556 |
Monolithic integration of microwave silicon devices and low loss transmission lines
A monolithic integrated circuit capable of operation in the microwave range which is fabricated using silicon technology wherein transmission line interconnects are fabricated along with active...
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5559359 |
Microwave integrated circuit passive element structure and method for reducing signal propagation losses
A passive element structure and method for a microwave integrated circuit reduces signal propagation losses. In one approach, a passive element (10) has an insulating layer (12) overlying a silicon...
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5371400 |
Semiconductor diode structure
Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing...
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5343065 |
Method of controlling surge protection device hold current
The hold current of a breakover type surge protection device is increased by irradiating the device with γ or x rays so as to form crystal lattice defects in the semiconductor regions thereof.
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5278444 |
Planar varactor frequency multiplier devices with blocking barrier
A planar frequency tripler comprised of two semiconductor diode structures connected back-to-back by an n + doped layer (N + ) of semiconductor material utilizes an n doped semiconductor material...
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5140382 |
Microwave integrated circuit using a distributed line with a variable effective length
In this invention, a distributed constant line on a microwave IC is formed of a Schottky metal, and a semiconductor conductive layer contacting the distributed constant line at least at one...
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5086329 |
Planar gallium arsenide NPNP microwave switch
A microwave switch is provided for controlling the transmission of microw energy in a microstrip transmission line structure. The microwave switch comprises an electrically conducting ground plane...
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4706041 |
Periodic negative resistance microwave structures and amplifier and oscillator embodiments thereof
Structures (30) with IMPATT type diodes (34) located periodically along a transmission line (38-32) to simulate a distributed diode are disclosed. Preferred embodiments include incorporation of the...
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H000029 |
Tunnett diode and method of making
A TUNNETT (tunneling transit time) electronic device comprising a very thin injector uniformly doped at a high concentration, a thin drift region of lower doping of the same semiconductivity type,...
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4352115 |
Transit time diode with an input structure formed by a matrix of micropoints
A semiconducting diode utilizing the transit time of electrical charge carriers in a semiconductor medium, having an input structure formed by a matrix of micropoints, said matrix consisting of a...
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4286276 |
Dual Schottky contact avalanche semiconductor structure with electrode spacing equal to EPI layer thickness
A semiconductor structure comprising two conventional electrodes of an avalanche diode and furthermore a supplementary electrode. In a preferred embodiment the conventional and supplementary...
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4201604 |
Process for making a negative resistance diode utilizing spike doping
A modified Read-type diode having an extremely thin doping spike and with the electric field in the drift region terminated before the buffer zone. The buffer zone and a drift region are first...
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4197551 |
Semiconductor device having improved Schottky-barrier junction
A semiconductor device having an improved non-diffusive Schottky-barrier junction and metallization layers and method for producing the same. A thin layer of a Schottky-barrier forming metal such...
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4106959 |
Producing high efficiency gallium arsenide IMPATT diodes utilizing a gas injection system
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped...
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4060820 |
Low noise read-type diode
A Read-type avalanche diode having a low noise measure and capable of attaining output signal powers of one watt or more. An effective injection current is defined as the conduction current in the...
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4034394 |
Schottky semiconductor device
A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal...
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4033810 |
Method for making avalanche semiconductor amplifier
A microwave semiconductor amplifier or oscillator system in which a semiconductor device has an avalanching region at a junction and a heat sink having a higher thermal conductivity than said...
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4001858 |
Simultaneous molecular beam deposition of monocrystalline and polycrystalline III(a)-V(a) compounds to produce semiconductor devices
Described is a molecular beam technique for fabricating semiconductor devices from Group III(a)-V(a) compounds. To form planar isolated devices, an amorphous insulative layer is formed on selected...
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3986192 |
High efficiency gallium arsenide impatt diodes
The operating frequency of an IMPATT diode depends on the width of the depletion region formed during operation. The frequency of high efficiency GaAs IMPATT diodes comprising a non-uniformly doped...
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3921192 |
Avalanche diode
An avalanche diode including an active region having a barrier side and a collector side in which the net activator concentration in a first zone of the active region adjacent the barrier side is...
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3904449 |
Growth technique for high efficiency gallium arsenide impatt diodes
High efficiency GaAs Schottky barrier IMPATT diodes comprising a non-uniformly doped depletion region are fabricated by instantaneously injecting a known volume of a known concentration of dopant...
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3896479 |
Reduced stresses in III-V semiconductor devices
Substrate tensile stresses resulting from the combination of an electroplated gold or silver heat sink with a metal contact on III-V semiconductor devices, such as GaAs IMPATT diodes, may be...
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3739243 |
SEMICONDUCTOR DEVICE FOR PRODUCING OR AMPLIFYING ELECTRIC OSCILLATIONS
A Tunnel Transit Time Microwave Device is described, employing a Schottky barrier.
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3701050 |
SOLID STATE MICROWAVE OSCILLATING DEVICE
The present invention provides a device for producing microwave oscillations which generally comprises a solid state oscillating element and a cavity resonator, said element comprising a...
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3655540 |
METHOD OF MAKING SEMICONDUCTOR DEVICE COMPONENTS
Extremely thin semiconductor wafers are formed by growing an N-conductivity epitaxial layer on an N + -type substrate. A Schottky barrier contact is formed on the epitaxial layer and the assembly...
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3638082 |
PNPN IMPATT DIODE HAVING UNEQUAL ELECTRIC FIELD MAXIMA
This invention relates to a high-frequency semiconductor device wherein the internal built-in electric field distribution in a semiconductor is made to have two peak values under a DC bias...
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3621466 |
NEGATIVE RESISTANCE AVALANCHE DIODE STRUCTURES
Undesired electron trapping in a Read diode is prevented in one embodiment by using a p+pnin+ structural configuration. In another embodiment, a metal-nin+ configuration is used, with the...
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3493823 |
NEGATIVE-RESISTANCE SEMICONDUCTOR DEVICE FOR HIGH FREQUENCIES
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3466512 |
IMPACT AVALANCHE TRANSIT TIME DIODES WITH HETEROJUNCTION STRUCTURE
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3558366 |
Title is not available
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