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8164124 Photodiode with multi-epi films for image sensor  
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate; a first epitaxy semiconductor layer disposed on the semiconductor...
8115270 Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current  
An electrostatic discharge protection device includes a first bipolar transistor having a collector terminal connected with a first power supply terminal, an emitter terminal connected with the...
8022496 Semiconductor structure and method of manufacture  
A structure comprises a single wafer with a first subcollector formed in a first region having a first thickness and a second subcollector formed in a second region having a second thickness,...
7939905 Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current  
According to an embodiment of the present invention, an electrostatic breakdown protection method protects a semiconductor device from a surge current impressed between a first terminal and a...
7829970 Junction barrier schottky diode having high reverse blocking voltage  
A junction barrier Schottky diode has an N-type well having surface and a first impurity concentration; a p-type anode region in the surface of the well, and having a second impurity concentration;...
7709923 Metal-base nanowire transistor  
A metal-base transistor is suggested. The transistor comprises a first and a second electrode (2, 6) and base electrode (6) to control current flow between the first and second electrode. The first...
7528459 Punch-through diode and method of processing the same  
A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area (16) is deposited onto at least part of the first p-doped well's (9)...
7470980 Apparatus and method for manufacturing a display device substrate  
An apparatus and method for manufacturing a display device substrate are provided. In one embodiment, the apparatus comprises a clamp for clamping an edge of a plastic substrate, and a tension...
7262498 Assembly with a ring and bonding pads formed of a same material on a substrate  
An assembly includes a substrate, a device coupled to the substrate; a ring formed on the substrate; and one or more bonding pads formed on the substrate, wherein the ring and bonding pads are...
7190007 Isolated fully depleted silicon-on-insulator regions by selective etch  
The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions;...
7019378 Field-shielded SOI-MOS structure free from floating body effects, and method of fabrication therefor  
A silicon-on-insulator structure provides an effective drift field for holes, and simultaneously enhanced recombination centers for holes and electrons. The structure includes a silicon substrate,...
6670650 Power semiconductor rectifier with ring-shaped trenches  
A high-speed, soft-recovery semiconductor device that reduces leakage current by increasing the Schottky ratio of Schottky contacts to pn junctions. In one embodiment of the present invention, an...
6417554 Latch free IGBT with schottky gate  
A three layer IGBT which cannot latch on is provided with a trench gate and a Schottky contact to the depletion region surrounding the trench gate. An emitter contact is connected to base diffusion...
6351018 Monolithically integrated trench MOSFET and Schottky diode  
A monolithically integrated Schottky diode together with a high performance trenched gate MOSFET. A MOS enhanced Schottky diode structure is interspersed throughout the trench MOSFET cell array to...
6208012 Zener zap diode and method of manufacturing the same  
The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain...
5536966 Retrograde NWell cathode Schottky transistor and fabrication process  
An improved Schottky transistor structure (6), including a bipolar transistor structure (7) and a Schottky diode structure (8), is formed by retrograde diffusing relatively fast diffusing atoms to...
5371400 Semiconductor diode structure  
Desirably, a Schottky barrier semiconductor diode has low forward direction rising voltage and high inverse direction yield voltage. A semiconductor device is provided with a first metal producing...
5111253 Multicellular FET having a Schottky diode merged therewith  
A semiconductor power switching device comprises a multicellular FET structure with a Schottky barrier diode structure interspersed therewith with at least some of the FET cells being free of...
4969027 Power bipolar transistor device with integral antisaturation diode  
A high power bipolar transistor device includes an integral antisaturation Schottky diode resulting from direct contact between the metallic base electrode and the collector region of the...
4965643 Schottky diode for integrated circuits  
An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may...
4943742 Schottky barrier diode clamp transistor  
A semiconductor device used for, particularly, an output stage of a logic circuit is formed by a Schottky.barrier.diode clamping transistor. A clamping circuit is provided between a collector and a...
4835580 Schottky barrier diode and method  
The preferred embodiments include Schottky barrier diode (80) clmaped bipolar transistors for use in planar integrated circuits with the diode (80) being formed in a trench to increase junction...
4823172 Vertical MOSFET having Schottky diode for latch-up prevention  
In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p+ or n+ substrate, a p type channel region, and an n+ source region, there is...
4811065 Power DMOS transistor with high speed body diode  
This inventive DMOS transistor provides faster turn-on switching than prior art lateral and vertical DMOS transistors in dV/dt situations and prevents catastrophic failures from high dV/dt's. The...
4807008 Static memory cell using a heterostructure complementary transistor switch  
A heterostructure complementary transistor switch (HCTS) is fabricated using epitaxial layers on a substrate to form the desired P-N-P-N (or N-P-N-P) complementary structure in III-V compound...
4806787 Schmitt circuit for semiconductor integrated circuit  
A Schmitt circuit for a semiconductor integrated circuit has resistances of predetermined resistors of the Schmitt circuit respectively selected from a plurality of resistances so as to obtain...
4752813 Schottky diode and ohmic contact metallurgy  
A Schottky barrier diode and ohmic contact metallurgy which is especially suited for shallow-junction bipolar semiconductor devices. The metallurgy comprises a thin layer of an at least 95 atomic %...
4613887 Semiconductor device with a means for discharging carriers  
In an output transistor of transistor-transistor logic (TTL) circuits, an output transistor of TTL is provided with, in a region between a p-type base region and the p-type semiconductor substrate...
4586071 Heterostructure bipolar transistor  
A heterojunction bipolar transistor having an ohmic contact at the intersection of the base and an adjacent region serving as emitter or collector that forms an ohmic contact to the base and a...
4443808 Semiconductor device  
A semiconductor device having a high breakdown voltage transistor and a Schottky barrier diode. The Schottky barrier diode is formed in a surface portion of a semiconductor layer adjacent to the...
4394673 Rare earth silicide Schottky barriers  
In the practice of this disclosure, rare earth disilicide low Schottky barriers (.ltorsim.0.4 eV) are used as low resistance contacts to n-Si. Further, high resistance contacts to p-Si (Schottky...
4333100 Aluminum Schottky contacts and silicon-aluminum interconnects for integrated circuits  
A silicon substrate integrated circuit having a layer of aluminum forming Schottky contacts with lightly doped N conductivity regions and silicon doped aluminum forming ohmic contacts to heavily...
4316202 Semiconductor integrated circuit device having a Schottky barrier diode  
An integrated Schottky barrier diode having a low forward voltage is disclosed. It has been discovered that, contrary to previous theory, the mathematical relationships between the contact area of...
4282538 Method of integrating semiconductor components  
A dielectric-isolated PNP transistor with Schottky protection, either alone or as one of an integrated pair of complementary bipolar transistors has complete dielectric isolation from neighboring...
4253105 Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device  
A semiconductor power device comprises a semiconductor pellet having first and second opposing major surfaces, including, in series, emitter, base and collector regions forming a PNP transistor....
4228448 Bipolar integrated semiconductor structure including I2 L and linear type devices and fabrication methods therefor  
This disclosure relates to a bipolar integrated semiconductor structure that has incorporated therein both I2 L and linear type bipolar devices. The integrated structure utilizes a double epitaxial...
4178603 Schottky transistor with low residual voltage  
A planar transistor has its base-collector-pn-junction bridged with a Schottky diode, wherein the degree of coupling of the Schottky diode is modified by means of a semiconducting layer with...
4156246 Combined ohmic and Schottky output transistors for logic circuit  
A silicon semiconductor integrated logic circuit of the injection or merged transistor logic type has output contacts in which ohmic and Schottky barrier portions are combined. A portion of the...
4127860 Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact  
A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor...
4121116 Component for logic circuits and logic circuits equipped with this component  
A component for integrated logic circuits comprises two complementary transistors integrated on the same substrate. A Schottky diode is connected in parallel with the output electrode and prevents...
4084174 Graduated multiple collector structure for inverted vertical bipolar transistors  
A graduated multiple collector structure for inverted vertical bipolar transistors, integrated injection logic devices and the like. The invention increases the gain of more distant collectors...
4079408 Semiconductor structure with annular collector/subcollector region  
Disclosed is a semiconductor structure with an annular collector/subcollector region. The base area with the emitter, is positioned over the collector/subcollector region only, resulting in a...
4069428 Transistor-transistor-logic circuit  
Disclosed is a transistor-transistor-logic (TTL) circuit which is testable by D. C. Testing Techniques. The improvement includes a high impedance network for providing sufficient base drive to...
4062033 Schottky barrier type semiconductor device  
A Schottky barrier is formed between a semiconductor substrate and a metal contact and stabilized by a polycrystalline silicon layer containing oxygen in the range between 2 and 45 atomic percent...
4035907 Integrated circuit having guard ring Schottky barrier diode and method  
Integrated circuit having a guard ring Schottky barrier diode therein in which first and second layers of metallization are provided overlying the Schottky barrier diode which are brought into...
4032796 Logic dot-and gate circuits  
A logic family is provided capable of accomplishing a logic function for each transistor used, i.e. one transistor per logic gate. A plurality of logic gate types are shown, each capable of a...
4032962 High density semiconductor integrated circuit layout  
An integrated logic circuit having a novel layout in a semiconductor substrate. The area required for the circuits within the substrate is substantially less than that of prior layouts. Each...
4015283 High speed element of an integrated circuit with a majority carrier junction having a large current capability  
In an element of an integrated circuit including a transistor and a "majority carrier diode" at least one terminal of which is connected to the base or collector of said transistor, the "majority...
4005469 P-type-epitaxial-base transistor with base-collector Schottky diode clamp  
A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N- conductivity type contiguous...
3953866 Cross coupled semiconductor memory cell  
A semiconductor memory cell, and a method for fabrication, including a one conductivity semiconductor body having a major surface and an opposite conductivity layer formed on said major surface...
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