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7633135 Bottom anode Schottky diode structure and method  
This invention discloses a bottom-anode Schottky (BAS) diode that includes an anode electrode disposed on a bottom surface of a semiconductor substrate. The bottom-anode Schottky diode further...
7612426 Schottky barrier diode and diode array  
A Schottky barrier diode includes a first semiconductor layer and a second semiconductor layer successively formed above a semiconductor substrate with a buffer layer formed between the first and...
7608904 Semiconductor device components with conductive vias and systems including the components  
A semiconductor device component includes at least one conductive via. The at least one conductive via may include a seed layer for facilitating adhesion of a conductive material within the via...
7608907 LDMOS gate controlled schottky diode  
An improved diode is disclosed. The diode comprises a Schottky diode and a LDMOS device coupled in series with the Schottky diode. In a preferred embodiment, a forward current from the Schottky...
7602036 Trench type Schottky rectifier with oxide mass in trench bottom  
A trench type junction barrier rectifier has silicon dioxide spacers at the bottom of trenches in a silicon surface and beneath the bottom of a conductive polysilicon filler in the trench. A...
7586173 Method and apparatus for using flex circuit technology to create a reference electrode channel  
A method of creating a sensor that may include applying a first conductive material on a first portion of a substrate to form a reference electrode and depositing a first mask over the substrate,...
7541640 Vertical field-effect transistor and method of forming the same  
A semiconductor device, a method of forming the same, and a power converter including the semiconductor device. In one embodiment, the semiconductor device includes a heavily doped substrate, a...
7528459 Punch-through diode and method of processing the same  
A monolithically integrated punch-through diode with a Schottky-like behavior. This is achieved as a Schottky-metal area ( 16 ) is deposited onto at least part of the first p-doped well's ( 9 )...
7525171 Semiconductor device and a method of manufacturing the same  
A semiconductor device has a semiconductor (e.g., a silicon substrate), an electrically conductive region (e.g., a source region and a drain region) which is in contact with the semiconductor to...
7485941 Cobalt silicide schottky diode on isolated well  
A Schottky diode is formed on an isolated well (e.g., a P-well formed in a buried N-well), and utilizes cobalt silicide (CoSi 2 ) structures respectively formed on heavily doped and lightly doped...
7453133 Silicide/semiconductor structure and method of fabrication  
A preferred embodiment of the present invention comprises a dielectric/metal/2 nd energy bandgap (E g ) semiconductor/1 st E g substrate structure. In order to reduce the contact resistance, a...
7432579 Semiconductor device with horizontal MOSFET and Schottky barrier diode provided on single substrate  
A MOS field-effect transistor includes a semiconductor substrate of a first-conductivity type, a semiconductor layer of the first-conductivity type, a source region of a second-conductivity type, a...
7429523 Method of forming schottky diode with charge balance structure  
a Schottky diode having a semiconductor region is formed as follows. A plurality of charge control electrodes are formed in the semiconductor region so as to influence an electric field in the...
7402852 Charge coupled device having a back electrode  
A charge coupled device (CCD) is disclosed which has a semiconductor body ( 20 ) comprising polymer or oligomer semiconductor material in place of the conventional silicon. A back electrode ( 22 )...
7388271 Schottky diode with minimal vertical current flow  
A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second...
7345350 Process and integration scheme for fabricating conductive components, through-vias and semiconductor components including conductive through-wafer vias  
A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole...
7312510 Device using ambipolar transport in SB-MOSFET and method for operating the same  
A device using an ambipolar transport of an SB-MOSFET and a method for operating the same are provided. The SB-MOSFET includes: a silicon channel region; a source and a drain contacted on both...
7238976 Schottky barrier rectifier and method of manufacturing the same  
A Schottky barrier rectifier, in accordance with embodiments of the present invention, includes a first conductive layer and a semiconductor. The semiconductor includes a first doped region, a...
7211865 Silicided body contact SOI device  
A semiconductor device includes a dielectric layer, a semiconductor layer provided above the dielectric layer, a gate dielectric layer provided above the semiconductor layer, a gate electrode...
7199442 Schottky diode structure to reduce capacitance and switching losses and method of making same  
A SiC Schottky barrier diode (SBD) is provided having a substrate and two or more epitaxial layers, including at least a thin, lightly doped N-type top epitaxial layer, and an N-type epitaxial...
7193291 Organic Schottky diode  
An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other...
7141860 LDMOS transistor  
An LDMOS transistor has a Schottky diode inserted at the center of a doped region of the LDMOS transistor. A Typical LDMOS transistor has a drift region in the center. In this case a Schottky diode...
7129558 Chip-scale schottky device  
A chip-scale schottky package which has at least one cathode electrode and at least one anode electrode disposed on only one major surface of a die, and solder bumps connected to the electrode for...
7102207 Semiconductor device having rectifying action  
A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer...
7078770 Fully depleted silicon-on-insulator CMOS logic  
A extractor implanted region is used in a silicon-on-insulator CMOS memory device. The extractor region is reversed biased to remove minority carriers from the body region of partially depleted...
7061066 Schottky diode using charge balance structure  
In accordance with an embodiment of the invention, a Schottky diode includes a metal layer in contact with a semiconductor region to form a Schottky barrier therebetween. A first trench extends in...
7019377 Integrated circuit including high voltage devices and low voltage devices  
An integrated circuit includes a high voltage Schottky barrier diode and a low voltage device. The Schottky barrier diode includes a lightly doped p-well as guard ring while the low voltage devices...
6949401 Semiconductor component and method for producing the same  
A method for producing a semiconductor component with adjacent Schottky ( 5 ) and pn ( 9 ) junctions positions in a drift area ( 2, 10 ) of a semiconductor material. According to the method, a...
6921957 Low forward voltage drop schottky barrier diode and manufacturing method therefor  
A new low forward voltage drop Schottky barrier diode and its manufacturing method are provided. The method includes steps of providing a substrate, forming plural trenches on the substrate, and...
6917082 Gate-body cross-link circuitry for metal-oxide-semiconductor transistor circuits  
A gate-body cross-linked metal-oxide-semiconductor transistor circuit is provided for use in integrated circuits. The circuit has parallel metal-oxide-semiconductor transistors. The sources of the...
6878994 MOSgated device with accumulated channel region and Schottky contact  
A MOSgated device has spaced vertical trenches lined with a gate oxide and filled with a P type polysilicon gate. The gate oxide extends along a vertical N − channel region disposed between an N...
6855983 Semiconductor device having reduced on resistance  
A trench gate type semiconductor device has an ON resistance that has been reduced. The device has a drain electrode on one side of the substrate and has a drift region, channel region, source...
6855999 Schottky diode having a shallow trench contact structure for preventing junction leakage  
A method for fabricating a Schottky diode using a shallow trench contact to reduce leakage current in the fabrication of an integrated circuit device is described. An insulating layer is deposited...
6831345 High withstand voltage semiconductor device  
A high withstand voltage semicnductor device does not show any significant fall of its withstand voltage if the impurity concentration of the RESURF layer of a low impurity concentration...
6787871 Integrated schottky barrier diode and manufacturing method thereof  
An integrated Schottky barrier diode chip includes a compound semiconductor substrate, a plurality of Schottky barrier diodes formed on the substrate and an insulating region formed on the...
6784489 Method of operating a vertical DMOS transistor with schottky diode body structure  
A method of operating a vertical DMOS transistor associated with a Schottky diode, the method including diverting current from flowing through a body-to-drain pn junction diode to flowing through...
6774451 Mos transistor for high density integration circuits  
This invention relates to a MOS transistor made in the thin film of silicon of an SOI chip ( 10 ), said thin film ( 13 ) being slightly doped and of less than 30 nm in thickness, the source ( 14 )...
6762098 Trench DMOS transistor with embedded trench schottky rectifier  
An integrated circuit having a plurality of trench Schottky barrier rectifiers within one or more rectifier regions and a plurality of trench DMOS transistors within one or more transistor regions....
6753588 Semiconductor rectifier  
A semiconductor rectifier includes an intermediate semiconductor region ( 29 ) extending between anode ( 9 ) and cathode ( 7 ) contacts. A trenched gate ( 19 ) with insulated sidewalls ( 15 ) and...
6737704 Transistor and method of manufacturing the same  
A technique is provided which makes it possible to reduce the area of a power MOSFET. A power MOSFET 1 according to the invention is a trench type in which a source region 27 is exposed on both...
6724047 Body contact silicon-on-insulator transistor and method  
A method for fabricating a body contact silicon-on-insulator transistor ( 10 ) includes forming a semiconductor substrate ( 12 ) over an insulator ( 14 ) and lightly doping the semiconductor...
6717229 Distributed reverse surge guard  
A diode ( 20 ), having first and second conductive layers ( 24,26 ), a conductive pad ( 28 ), and a distributed reverse surge guard ( 22 ), provides increased protection from reverse current...
6708022 Power amplification system and mobile radio communication terminal  
A power amplifier system has a high frequency power amplifier circuit section employing source-grounded enhancement type n-channel MESFETs for receiving a drain bias voltage and a gate bias voltage...
6703678 Schottky barrier field effect transistor large in withstanding voltage and small in distortion and return-loss  
A Schottky barrier field effect transistor has a gate electrode formed with a field plate in order to achieve a high withstanding voltage, where the thickness of the dielectric layer between the...
6674131 Semiconductor power device for high-temperature applications  
In a SiC substrate ( 10 ), a first active region ( 12 ) composed of n-type heavily doped layers ( 12 a ) and undoped layers ( 12 b ), which are alternately stacked, and a second active region ( 13...
6627967 Schottky barrier diode  
A Schottky barrier diode has a Schottky contact region formed in an n epitaxial layer disposed on a GaAs substrate and an ohmic electrode surrounding the Schottky contact region. The ohmic...
6624493 Biasing, operation and parasitic current limitation in single device equivalent to CMOS, and other semiconductor systems  
Disclosed are semiconductor devices including at least one junction which is rectifying whether the semiconductor is caused to be N or P-type, by the presence of applied gate voltage field induced...
6605854 Schottky diode with bump electrodes  
The package size of a diode is made smaller. On the element forming face of a semiconductor substrate having a p − -type conductive type, after a hyper-abrupt p + n + junction of a p + -type...
6509609 Grooved channel schottky MOSFET  
A grooved channel Schottky contacted MOSFET has asymmetric source and drain regions. The MOSFET includes an undoped silicon substrate with a background doping concentration of less than about 10 17...
6462393 Schottky device  
An improved Schottky device, having a low resistivity layer of semiconductor material, a high resistivity layer of semiconductor material and a buried dopant region positioned in the high...
Matches 1 - 50 out of 163 1 2 3 4 >