Matches 1 - 50 out of 394 1 2 3 4 5 6 7 8 >

AcclaimIP-ad

Match Document Document Title
9041059 Semiconductor structure for antenna switching circuit  
A manufacturing method for antenna switching circuit includes the following steps of: providing a GaAs wafer, which includes a capping layer; disposing an isolation layer to the GaAs wafer for...
9029974 Semiconductor device, junction field effect transistor and vertical field effect transistor  
A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the...
9018685 Semiconductor structure for an electronic interruptor power switch  
The invention relates to a structure comprising an n-type substrate (1) having a bottom surface (10) and a top surface (11), a drain (D) contacting the bottom surface (10) of the substrate (1), a...
9006858 High-voltage trench junction barrier Schottky diode  
In a Schottky diode having an n+-type substrate, an n-type epitaxial layer, at least two p-doped trenches introduced into the n-type epitaxial layer, mesa regions between adjacent trenches, a...
8993444 Method to reduce dielectric constant of a porous low-k film  
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for...
8969995 Semiconductor device and rectifier system  
High-efficiency Schottky diodes (HED) and rectifier systems having such semiconductor devices are provided, which Schottky diodes (HED) are composed of at least one Schottky diode combined with an...
8969993 Wide gap semiconductor device and method for manufacturing same  
A wide gap semiconductor device includes a substrate and a Schottky electrode. The substrate formed of a wide gap semiconductor material has a main face, and includes a first-conductivity-type...
8969927 Gate contact for a semiconductor device and methods of fabrication thereof  
Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a...
8963276 Semiconductor device including a cell array having first cells and second cells interspersed around the arrangement of the first cells  
A semiconductor device that can achieve a high-speed operation at a time of switching, and the like. The semiconductor device includes: a p-type buried layer buried within an n−-type semiconductor...
8963167 Diode energy converter for chemical kinetic electron energy transfer  
An improved diode energy converter for chemical kinetic electron energy transfer is formed using nanostructures and includes identifiable regions associated with chemical reactions isolated...
8952481 Super surge diodes  
The present disclosure relates to a semiconductor device having a Schottky contact that provides both super surge capability and low reverse-bias leakage current. In one preferred embodiment, the...
8946725 Vertical gallium nitride JFET with gate and source electrodes on regrown gate  
A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A...
8936964 Silicon carbide schottky-barrier diode device and method for manufacturing the same  
The present invention provides a silicon carbide Schottky-barrier diode device and a method for manufacturing the same. The silicon carbide Schottky bather diode device includes a primary n−...
8933531 Semiconductor device having schottky diode structure  
A semiconductor device including a base substrate; a semiconductor layer which is disposed on the base substrate and has a 2-Dimensional Electron Gas (2DEG) generated within the semiconductor...
8928031 Nanotube semiconductor devices  
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a second...
8916946 Optical semiconductor device  
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present...
8912621 Trench schottky devices  
During fabrication of a semiconductor device, a width of semiconductor mesas between isolation trenches in the semiconductor device is varied in different regions. In particular, the width of the...
8912622 Semiconductor device  
A semiconductor device includes a first-conductivity-type semiconductor substrate, a first first-conductivity-type semiconductor layer, a second first-conductivity-type semiconductor layer, a...
8901661 Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor device  
A semiconductor device includes a source metallization and a semiconductor body. The semiconductor body includes a first field-effect structure including a source region of a first conductivity...
8896084 Semiconductor device  
A semiconductor device includes a first semiconductor region of a first conductivity type and formed of a material having a band gap wider than that of silicon; a first layer selectively disposed...
8890277 Graphite and/or graphene semiconductor devices  
Various embodiments are provided for graphite and/or graphene based semiconductor devices. In one embodiment, a semiconductor device includes a semiconductor layer and a semimetal stack. In...
8890278 Semiconductor device  
Reliability of a semiconductor device is improved by suppressing reverse voltage deterioration at the time of reverse bias junction barrier Schottky diode using a substrate containing SiC. In a...
8884395 Schottky diode and method for fabricating the same  
A Schottky diode includes a deep well formed in a substrate, an isolation layer formed in the substrate, a first conductive type guard ring formed in the deep well along an outer sidewall of the...
8878329 High voltage device having Schottky diode  
A high voltage device having a Schottky diode integrated with a MOS transistor includes a semiconductor substrate a Schottky diode formed on the semiconductor substrate, at least a first doped...
8878327 Schottky barrier device having a plurality of double-recessed trenches  
A Schottky barrier device includes a semiconductor substrate, a first contact metal layer, a second contact metal layer and an insulating layer. The semiconductor substrate has a first surface,...
8860169 Semiconductor device comprising a Schottky barrier diode  
The present invention aims to enhance the reliability of a semiconductor device equipped with a Schottky barrier diode within the same chip, and its manufacturing technology. The semiconductor...
8860168 Schottky isolated NMOS for latch-up prevention  
An integrated circuit structure includes a substrate, a semiconductor device supported by the substrate, and a guard ring structure disposed around the semiconductor device, the guard ring...
8847395 Microelectronic device having metal interconnection levels connected by programmable vias  
A microelectronic device, including: a substrate and a plurality of metal interconnection levels stacked on the substrate; a first metal line of a given metal interconnection level; a second metal...
8836071 Gallium nitride-based schottky barrier diode with aluminum gallium nitride surface layer  
A method of fabricating a Schottky diode using gallium nitride (GaN) materials includes providing an n-type GaN substrate having a first surface and a second surface. The second surface opposes...
8823013 Second Schottky contact metal layer to improve GaN schottky diode performance  
A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact...
8816468 Schottky rectifier  
A semiconductor rectifier includes a semiconductor substrate having a first type of conductivity. A first layer, which is formed on the substrate, has the first type of conductivity and is more...
8816466 Protective element for electronic circuits  
A protective element for electronics has at least one Schottky diode and at least one Zener diode which are located between a power supply and the electronics, the anode of the Schottky diode...
8809902 Power semiconductor diode, IGBT, and method for manufacturing thereof  
A power semiconductor diode is provided. The power semiconductor diode includes a semiconductor substrate having a first emitter region of a first conductivity type, a second emitter region of a...
8796088 Semiconductor device and method of fabricating the same  
A semiconductor device and a method of fabricating the semiconductor device is provided. In the method, a semiconductor substrate defining a device region and an outer region at a periphery of the...
8796808 MOS P-N junction schottky diode device and method for manufacturing the same  
A MOS P-N junction Schottky diode device includes a substrate having a first conductivity type, a field oxide structure defining a trench structure, a gate structure formed in the trench structure...
8772900 Trench Schottky barrier diode and manufacturing method thereof  
The present invention discloses a trench Schottky barrier diode (SBD) and a manufacturing method thereof. The trench SBD includes: an epitaxial layer, formed on a substrate; multiple mesas,...
8766395 Schottky device  
A device includes a Schottky barrier formed by a metal-semiconductor junction between a semiconductor nanowire and a metal contact. The metal contact at least partly encloses a circumferential...
8765523 Method for manufacturing semiconductor device including Schottky electrode  
A method for manufacturing a semiconductor device includes the steps of preparing a substrate made of silicon carbide and having an n type region formed to include a main surface, forming a p type...
8742534 Semiconductor device having lateral diode  
A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater...
8742533 Constant current semiconductor device having a schottky barrier  
This invention reveals a constant current semiconductor device of an N-type or a P-type epitaxial layer on a semi-insulating substrate, the device is treated by using a Schottky barrier to cut off...
8729601 Nanotube semiconductor devices  
Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a first...
8704322 Optical semiconductor device  
The present invention is intended to provide a compact and simple optical semiconductor device that reduces crosstalk (leakage current) between light receiving elements. According to the present...
8680643 Junction barrier Schottky (JBS) with floating islands  
A Schottky diode includes a Schottky barrier and a plurality of dopant regions disposed near the Schottky barrier as floating islands to function as PN junctions for preventing a leakage current...
8653534 Junction Barrier Schottky diodes with current surge capability  
An electronic device includes a silicon carbide drift region having a first conductivity type, a Schottky contact on the drift region, and a plurality of junction barrier Schottky (JBS) regions at...
8653600 High-voltage monolithic schottky device structure  
A semiconductor device includes a pillar formed on a substrate of the same conductivity type. The pillar has a vertical thickness that extends from a top surface down to the substrate. The pillar...
8648437 Trench sidewall contact Schottky photodiode and related method of fabrication  
A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the...
8642882 Electron-jump chemical energy converter  
A method and a device for converting energy uses chemical reactions in close proximity to or on a surface to convert a substantial fraction of the available chemical energy of the shorter lived...
8643085 High-voltage-resistant semiconductor component having vertically conductive semiconductor body areas and a trench structure  
A high-voltage-resistant semiconductor component (1) has vertically conductive semiconductor areas (17) and a trench structure (5). These vertically conductive semiconductor areas are formed from...
8633560 Semiconductor device  
A semiconductor device capable of decreasing a reverse leakage current and a forward voltage is provided. In the semiconductor device, an anode electrode undergoes Schottky junction by being...
8629525 Second contact schottky metal layer to improve GaN schottky diode performance  
A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based...
Matches 1 - 50 out of 394 1 2 3 4 5 6 7 8 >