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7608905 |
Independently addressable interdigitated nanowires
An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically...
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7605440 |
Pixel cell isolation of charge storage and floating diffusion regions using doped wells
A pixel having a well-isolated charge storage region or floating diffusion region may be obtained by providing a separate P-well around the storage region or floating diffusion region. In one...
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7589366 |
Solid-state imaging device and method for manufacturing the same
A solid-state imaging device includes a semiconductor substrate ( 1 ) with a photodetector portion ( 15 ). The photodetector portion ( 15 ) includes a p-type first impurity region (surface...
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7579668 |
Method for photo-detecting and apparatus for the same
A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N...
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7554170 |
Variably responsive photosensor
A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A...
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7541659 |
Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are...
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7538403 |
PIN diode structure with zinc diffusion region
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first...
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7535037 |
Solid state image sensor devices having non-planar transistors
CMOS image sensor devices are provided, wherein active pixel sensors are designed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag...
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7535073 |
Solid-state imaging device, camera module and electronic equipment module
To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which...
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7535042 |
Pixel cell with a controlled output signal knee characteristic response
A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate...
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7531885 |
Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus
A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a...
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7504702 |
Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent...
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7495264 |
Semiconductor device with high dielectric constant insulating film and manufacturing method for the same
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the...
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7485939 |
Solid-state imaging device having a defect control layer and an inversion layer between a trench and a charge accumulating area
An inversion layer is formed in a part as a boundary between (a) a defect control layer formed along a trench surface for isolating pixel calls and (b) a photo diode. The defect control layer is a...
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7432578 |
CMOS image sensor with enhanced photosensitivity
A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least...
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7394141 |
Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same
A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the...
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7385272 |
Method and apparatus for removing electrons from CMOS sensor photodetectors
An improved CMOS sensor integrated circuit is disclosed, along with methods of making the circuit and computer readable descriptions of the circuit.
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7382007 |
Solid-state image pickup device and manufacturing method for the same
A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a...
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7345355 |
Complementary junction-narrowing implants for ultra-shallow junctions
Methods are disclosed for forming ultra shallow junctions in semiconductor substrates using multiple ion implantation steps. The ion implantation steps include implantation of at least one...
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7329557 |
Method of manufacturing solid-state imaging device with P-type diffusion layers
A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode...
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7297590 |
Method for fabricating an integrated pin diode and associated circuit arrangement
A method for producing an integrated PIN photodiode. The PIN photodiode contains a doped region of a first conduction type near the substrate and a doped region that is remote from the substrate....
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7217982 |
Photodiode having voltage tunable spectral response
A photodetector ( 10 ) includes a substrate ( 12 ) having a surface; a first layer ( 14 ) of semiconductor material that is disposed above the surface, the first layer containing a first dopant at...
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7202511 |
Near-infrared visible light photon counter
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral...
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7199412 |
Image sensor with surface regions of different doping
A production method for an image sensor which is provided with a plurality of sensor portions arranged on a semiconductor substrate and each having a first photodiode constituted by a first region...
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7176532 |
CMOS active pixel sensor with improved dark current and sensitivity
An active pixel sensor which provides reduced dark current, improved sensitivity, and improved modulation transfer function. An N well, surrounded by a P well is formed in a P type epitaxial...
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7164164 |
Display device and photoelectric conversion device
A display device has display elements provided inside of pixels, each being formed in vicinity of intersections of signal lines and scanning lines aligned in matrix form; and photoelectric...
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7151305 |
Photoelectric conversion device, and image sensor and image input system making use of the same
In a photoelectric conversion device including a first-conductivity type first semiconductor region located in a pixel region, a second-conductivity type second semiconductor region provided in the...
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7132724 |
Complete-charge-transfer vertical color filter detector
A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a...
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7126052 |
Isoelectronic surfactant induced sublattice disordering in optoelectronic devices
A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to...
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7122734 |
Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers
A method of reducing propagation of threading dislocations into active areas of an optoelectronic device having a III–V material system includes growing a metamorphic buffer region in the...
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7115925 |
Image sensor and pixel having an optimized floating diffusion
An active pixel includes a a photosensitive element formed in a semiconductor substrate. A transfer transistor is formed between the photosensitive element and a floating diffusion and selectively...
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7078741 |
Enhanced photodetector
The present invention includes a photodiode having a first p-type semiconductor layer and an n-type semiconductor layer coupled by a second p-type semiconductor layer. The second p-type...
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7057256 |
Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent...
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7034347 |
Charge detecting device
There is provided a charge detecting device that can convert an accumulated charge to a voltage at a low voltage and a high efficiency, and has a large dynamic range of an output voltage and...
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7009185 |
Ultraviolet detector and manufacture method thereof
The present invention relates to an ultraviolet detector and manufacture method thereof, in which a buffer layer is formed on a baseplate and a P-type GaN layer is formed on the baseplate by using...
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7002156 |
Detection system including avalanche photodiode for use in harsh environments
A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for...
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6995444 |
Ultrasensitive photodetector with integrated pinhole for confocal microscopes
Photodetector device comprising a semiconductor substrate ( 1 ) of a first type of conductivity connected to a first electrode ( 2 ). Said substrate comprises an active area ( 4 ) made up of...
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6956273 |
Photoelectric conversion element and solid-state image sensing device, camera, and image input apparatus using the same
In a photoelectric conversion element which is formed by alternately stacking a region of a first conductivity type and a region of a second conductivity type as a conductivity type opposite to the...
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6949809 |
Light receiving element, light detector with built-in circuitry and optical pickup
A light receiving element, comprising a semiconductor structure comprising at least a first conductivity type semiconductor layer, a first, second conductivity type semiconductor layer provided on...
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6940009 |
Solar cell
Improved solar cell composed of an upper layer or mesh of a conductive nature, a lower layer or mesh also of a conductive nature, and a series of intermediate semiconductor layers composed of a...
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6933488 |
Variable electronic shutter in CMOS imager with improved anti smearing techniques
A leakage compensated snapshot imager provides a number of different aspects to prevent smear and other problems in a snapshot imager. The area where the imager is formed may be biased in a way...
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6909162 |
Surface passivation to reduce dark current in a CMOS image sensor
A method for reducing dark current in a photodiode is disclosed. The photodiode comprises a N-well formed in a P-substrate. The method comprises doping the surface of said N-well with a nitrogen...
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6897559 |
Silicon-based thin film forming apparatus, silicon-based thin film forming method and semiconductor element
There is provided an apparatus for forming a plurality of silicon-based thin films on a substrate using a plurality of deposited film forming vessels that can form silicon-based thin films of...
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6838741 |
Avalanche photodiode for use in harsh environments
An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250...
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6831344 |
Photo detect element and an optical semiconductor device
An optical semiconductor device of the present invention is equipped with a photo detect element 10 comprising a photo detect part 7 provided with two photodiodes having two photodiodes having...
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6809391 |
Short-wavelength photodiode of enhanced sensitivity with low leak current and method of manufacturing photodiode
A photodiode comprises an optical detection portion for detecting an optical signal and outputting a photoelectric conversion signal. The optical detection portion has a semiconductor substrate of...
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6803614 |
Solid-state imaging apparatus and camera using the same apparatus
An AE/AF solid-state imaging apparatus exhibiting suitable characteristics of spectral sensitivities of an AE sensor and an AF sensor respectively, is actualized, wherein visual sensitivity...
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6784513 |
Semiconductor light receiving device and electronic apparatus incorporating the same
A semiconductor light receiving device is provided, which comprises a semiconductor substrate, a collector region, a base region, and an emitter region, an insulating film covering the surface of...
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6777769 |
Light-receiving element, light-receiving element array and light-receiving module and method for high frequency characteristics
A light-receiving element, comprises an absorption layer formed on a semiconductor substrate, a window layer formed on the absorption layer, a first electrode formed on the window layer, a second...
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6756618 |
CMOS color image sensor and method for fabricating the same
The present invention relates to a complementary metal-oxide semiconductor (CMOS) image sensor. Particularly, the present invention provides effects of suppressing electrical and optical...
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