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7626241 |
Thin film interference ripple reduction
A thin film structure for an optical sensor to achieve a wavelength window with nearly ripple free reflection and transmission has different areas of thin film with two or more different thicknesses.
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7619269 |
Semiconductor device, manufacturing process thereof and imaging device
A semiconductor device including a pixel region in which one or more pixels are formed and a DRAM cell region in which one or more DRAM cells for storing output signals from the pixels are formed,...
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7615396 |
Photodiode stack for photo MOS relay using junction isolation technology
A novel photodiode stack which comprising of more than 3 photodiodes connected in series to produce a large photovoltaic voltage in the presence of light using junction isolation technology.
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7611918 |
CMOS image sensor and method for fabricating the same
A CMOS image sensor and a method of fabricating the same are provided. The CMOS image sensor includes: an epitaxial layer of a first conductivity type, formed in a semiconductor substrate of the...
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7608906 |
Simultaneous unipolar multispectral integrated technology (SUMIT) detectors
A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength...
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7608905 |
Independently addressable interdigitated nanowires
An apparatus has multiple sets of independently addressable interdigitated nanowires. Nanowires of a set are in electrical communication with other nanowires of the same set and are electrically...
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7608903 |
Image sensor with SOI substrate
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel....
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7605398 |
Apparatus of high dynamic-range CMOS image sensor and method thereof
The present invention discloses an apparatus of high dynamic-range CMOS image sensor and method thereof. The present invention utilize a pixel circuit outputting an output signal, wherein the pixel...
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7601992 |
Light detecting element and control method of light detecting element
A light detecting element 1 including an element formation layer 22 which contains a well region 31. A surface electrode 25 is formed on the layer 22 through an insulating layer 24. The...
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7601910 |
Organic photovoltaic devices
The present invention generally relates to organic photosensitive optoelectronic devices. More specifically, it is directed to organic photovoltaic devices, e.g., organic solar cells. Further, it...
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7589366 |
Solid-state imaging device and method for manufacturing the same
A solid-state imaging device includes a semiconductor substrate ( 1 ) with a photodetector portion ( 15 ). The photodetector portion ( 15 ) includes a p-type first impurity region (surface...
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7586528 |
Color sensor and color image pickup method
A color sensor comprises: light reception elements that generate color signals corresponding to stimulus values of colors in an RGB color system, the stimulus values of colors comprising a stimulus...
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7586172 |
Blooming control method for a photodiode and corresponding integrated circuit
The photodiode comprises an upper pn junction (D 1 ) formed between an upper layer and an intermediate layer supported by one portion of a semiconductor substrate. A lower junction is formed...
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7586108 |
Radiation detector, method of manufacturing a radiation detector and lithographic apparatus comprising a radiation detector
The invention relates to a radiation detector, a method of manufacturing a radiation detector and a lithographic apparatus comprising a radiation detector. The radiation detector has a...
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7579668 |
Method for photo-detecting and apparatus for the same
A method for photo-detecting and an apparatus for the same are provided. The apparatus for photo-detecting includes a first P-N diode and a second P-N diode. The first P-N diode, has a first P-N...
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7579637 |
Image sensing device for reducing pixel-to-pixel crosstalk
An image sensor and a method of fabricating the image sensor are provided. The image sensor includes a semiconductor substrate having a first conductivity type, a deep well having a second...
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7569868 |
Image pickup device and image pickup system
There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a...
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7557418 |
Semiconductor photoreceptor device
A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an...
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7554170 |
Variably responsive photosensor
A photosensor includes a plurality of photosensitive regions including a first photosensitive region connected to a first voltage reference, and at least one additional photosensitive region. A...
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7550792 |
Solid-state imaging device and manufacturing method thereof
A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed...
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7545016 |
Integrated layer stack arrangement, optical sensor and method for producing an integrated layer stack arrangement
An integrated layer stack arrangement, an optical sensor and a method for producing an integrated layer stack arrangement is disclosed. Generally, an integrated layer stack arrangement includes a...
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7544975 |
Photodiode
A forward light monitoring photodiode having a high reflection film with low dark current for detecting forward light emitted from a laser diode and power of the laser diode in spite of the change...
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7541659 |
Photo-detector for detecting image signal of infrared laser radar and method of manufacturing the same
A photo-detector, in which metal wiring for connecting electrodes is arranged on a planarized surface and thus the metal wiring arrangement is simplified, and a method of manufacturing the same are...
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7538403 |
PIN diode structure with zinc diffusion region
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first...
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7538395 |
Method of forming low capacitance ESD device and structure therefor
In one embodiment, the ESD device uses highly doped P and N regions deep within the ESD device to form a zener diode that has a controlled breakdown voltage.
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7535073 |
Solid-state imaging device, camera module and electronic equipment module
To provide a back-illuminated type solid-state imaging device capable of color separation of pixels without using a color filter, and a camera module and an electronic equipment module which...
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7535042 |
Pixel cell with a controlled output signal knee characteristic response
A pixel cell with controlled leakage is formed by modifying the location and gate profile of a high dynamic range (HDR) transistor. The HDR transistor may have the gate profile of a transfer gate...
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7531885 |
Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus
A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7504702 |
Silicon-based visible and near-infrared optoelectric devices
In one aspect, the present invention provides a silicon photodetector having a surface layer that is doped with sulfur inclusions with an average concentration in a range of about 0.5 atom percent...
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7504701 |
Optical unit featuring both photoelectric conversion chip and semiconductor chip wrapped with flexible sheet
In an optical unit including a photoelectric conversion chip adapted to be optically connected to an optical fiber, and a semiconductor chip for driving the photoelectric conversion chip, both the...
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7498650 |
Backside illuminated CMOS image sensor with pinned photodiode
A backside illuminated CMOS image sensor having an silicon layer with a front side and a backside, the silicon layer liberates charge when illuminated from the backside with light, an active pixel...
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7482667 |
Edge viewing photodetecter
An edge viewing semiconductor photodetector may be provided. Light may be transmitted through an optical fiber conduit comprising a core region surrounded by a cladding region. The light may be...
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7482195 |
High mobility high efficiency organic films based on pure organic materials
A method of purifying small molecule organic material, performed as a series of operations beginning with a first sample of the organic small molecule material. The first step is to purify the...
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7470966 |
Photodiode with controlled current leakage
The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled...
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7453131 |
Photodiode detector and associated readout circuitry
A photodetector circuit incorporates an APD detector structure ( 10 ) comprising a p− silicon handle wafer ( 12 ) on which a SiO 2 insulation layer ( 14 ) is deposited in known manner. During...
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7439597 |
Poly diode structure for photo diode
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a...
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7436038 |
Visible/near infrared image sensor array
A MOS or CMOS sensor for high performance imaging in broad spectral ranges including portions of the infrared spectral band. These broad spectral ranges may also include portions or all of the...
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7432578 |
CMOS image sensor with enhanced photosensitivity
A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least...
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7432530 |
Solid-state imaging device and method of manufacturing same
A solid-state imaging device includes: a substrate; a photo-receiving portion formed in the substrate; a wiring layer formed on the substrate and having a trench being formed on a region directly...
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7423305 |
Solid-state image sensing device having high sensitivity and camera system using the same
A solid-state image sensing device includes a plurality of pixels. Each pixel has a photodiode, a first transistor, and a second transistor. The photodiode is constituted by a...
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7420235 |
Solid-state imaging device and method for producing the same
In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an...
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7417272 |
Image sensor with improved dynamic range and method of formation
Embodiments of the invention provide an image sensor having an improved dynamic range. A pixel cell comprises at least one transistor structure. The transistor structure comprises at least one...
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7411265 |
Photodiode and phototransistor
A phototransistor includes a first-conduction-type lower region, a second-conduction-type upper region disposed on the first region, a second-conduction-type electrode contact region of a high...
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7411232 |
Semiconductor photodetecting device and method of manufacturing the same
A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of...
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7400022 |
Photoreceiver cell with color separation
A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising:...
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7397076 |
CMOS image sensor with dark current reduction
Disclosed are a CMOS image sensor and a fabrication method thereof, which is adequate to reduce dark current. The CMOS image sensor comprises a device isolation region and an active region, which...
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7394141 |
Substrate for forming a solid-state image pickup element, solid-state image pickup element using the same, and method of producing the same
A substrate for a solid-state image pickup element, comprising: an n-type silicon substrate; and an n-type epitaxial growth layer formed on a surface of the n-type silicon substrate, wherein the...
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7385238 |
Low dark current image sensors with epitaxial SiC and/or carbonated channels for array transistors
A pixel cell having a substrate with a isolation channel formed of higher carbon concentrate such as SiC or carbonated silicon. The channel comprising SiC or carbonated silicon is provided over the...
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7382007 |
Solid-state image pickup device and manufacturing method for the same
A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a...
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