|
Match
|
Document |
Document Title |
|
|
7321157 |
CoSb3-based thermoelectric device fabrication method
A method of fabricating a CoSb 3 -based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode,...
|
|
|
7034328 |
Vertical geometry InGaN LED
A vertical geometry light emitting diode is disclosed that is capable of emitting light in the red, green, blue, violet and ultraviolet portions of the electromagnetic spectrum. The light emitting...
|
|
|
6881984 |
Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode
A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are...
|
|
|
6172370 |
Lateral PN arrayed digital x-ray image sensor
An X-ray imaging array is described together with a method for its manufacture. The array is defined by a set of PN junctions in a silicon wafer that extend all the way through between the two...
|
|
|
5434531 |
High voltage tolerant switch constructed for a low voltage CMOS process
An integrated circuit which includes a pair of serially arranged P channel transistor devices connected with their source and drain terminals in series. The devices are constructed as N well...
|
|
|
5285090 |
Contacts to rod shaped Schottky gate fets
Electrical ohmic contacts are made to a matrix of silicon having conductive rods embedded therein without making contact to any of the rods. Those rods which extend to the surface in the selected...
|
|
|
4633282 |
Metal-semiconductor field-effect transistor with a partial p-type drain
A metal-semiconductor field-effect transistor (MESFET) is provided with a p-type region adjacent the n-type region under the drain contact. Holes injected from this p-type region compensate the...
|
|
|
4549196 |
Lateral bipolar transistor
A lateral bipolar transistor is described incorporating at least two grooves extending from the upper surface and spaced apart by a predetermined amount from which impurities are introduced to form...
|
|
|
4207670 |
Method for making a solid state neuron
Temperature gradient zone melting is utilized to make a solid state neuron which mimics the conducting nerve pulses by a biological nerve cell and its nerve fiber.
|
|
|
4163983 |
Solid state neuron
A semiconductor neuron comprises a tunnel diode having a region of recrystallized semiconductor material formed in situ in a columnar structure body of semiconductor material by thermal gradient...
|
|
|
4157564 |
Deep diode devices
Deep diodes which extend in straight lines through a silicon wafer are produced by migrating aluminum droplets through the wafer while maintaining a finite temperature gradient through the wafer in...
|
|
|
4071378 |
Process of making a deep diode solid state transformer
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant...
|
|
|
4063966 |
Method for forming spaced electrically isolated regions in a body of semiconductor material
An array of vapor deposited metal wires is migrated by TGZM through a body of semiconductor material to divide the body into a plurality of individual regions electrically isolated from each other....
|
|
|
4063272 |
Semiconductor device and method of manufacture thereof
Disclosed is a semiconductor device and a method for the manufacture thereof. A semiconductor wafer with three stacked regions is provided. An inner region exhibits one conductivity type and the...
|
|
|
4042448 |
Post TGZM surface etch
Disclosed is a technique useful in the manufacture of semiconductor devices. A semiconductor wafer is provided and isolation regions are formed therein by the temperature gradient zone melting...
|
|
|
4032960 |
Anisotropic resistor for electrical feed throughs
An anistropic resistor for electrical feed throughs embodies a body of semiconductor material having at least one channel region of recrystallized material of the body formed therein. The channel...
|
|
|
4032955 |
Deep diode transistor
A deep diode transistor includes at least one of the emitter, the collector and the base regions comprising recrystallized material of the semiconductor substrate embodying the transistor. Each...
|
|
|
4030116 |
High aspect ratio P-N junctions by the thermal gradient zone melting technique
A thermal gradient zone melting technique is employed to migrate an array of metal buttons through a body of semiconductor material to form high aspect ratio P-N junctions therein. Semiconductor...
|
|
|
4024566 |
Deep diode device
When an aluminum-rich droplet is migrated along the [100] axis of a silicon crystal during a thermal gradient zone melting operation, a droplet is displaced appreciably from its thermal trajectory...
|
|
|
4024565 |
Deep diode solid state transformer
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of dopant...
|
|
|
4011582 |
Deep power diode
One region of a large area semiconductor power diode comprises recrystallized semiconductor material formed in situ, and joined to a second region, by temperature gradient zone melting.
|
|
|
4006040 |
Semiconductor device manufacture
An improved method of initiating the moving of a molten zone of a metal-rich semiconductor material through a solid body of the same semiconductor material embodies the sintering of the metal to...
|
|
|
3995309 |
Isolation junctions for semiconductor devices
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the...
|
|
|
3990093 |
Deep buried layers for semiconductor devices
A deep buried electrical layer is provided in a semiconductor device by thermal gradient zone melting.
|
|
|
3988772 |
Current isolation means for integrated power devices
The minority carrier lifetime is drastically reduced in an integrated semiconductor power device by introducing deep level impurities such, for example, as gold, silver, platinum, nickel and copper...
|
|
|
3988771 |
Spatial control of lifetime in semiconductor device
Deep level impurities such, for example, as gold, platinum, silver, nickel and copper, are introduced into selected regions of semiconductor devices by directional solidification to reduce the...
|
|
|
3988770 |
Deep finger diodes
Deep finger diodes in a body of semiconductor material are fabricated by a thermal gradient zone melting process. A liquid wire or droplet is migrated into the body through one surface to a depth...
|
|
|
3988769 |
High voltage diodes
A high voltage diode has a lamellar structured body of semiconductor material. The lamellar structure is produced by the thermal gradient zone melting process method of thermo migrating metal...
|
|
|
3988766 |
Multiple P-N junction formation with an alloy droplet
A droplet of alloy material containing at least two semiconductor dopant type elements, each of which has a different ratio of diffusivity, is thermomigrated by a thermal gradient zone melting...
|
|
|
3988764 |
Deep diode solid state inductor coil
An array of columnar structures are provided in a body of semiconductor material. The material of each columnar structure is recrystallized material of the body having solid solubility of a dopant...
|
|
|
3988763 |
Isolation junctions for semiconductors devices
Isolation junctions in semiconductor devices are formed by selected regions of specified conductivity wherein each region has a substantially uniform thickness and resistivity throughout the...
|
|
|
3988760 |
Deep diode bilateral semiconductor switch
A deep diode bilateral semiconductor switch has a lamellar body of single crystal semiconductor material of at least five alternate first and second regions of different and opposite type...
|
|
|
3982270 |
Deep diode varactors
A varactor has a lamellar structure of a plurality of abutting regions of alternate and opposite type conductivity. The structure is produced by thermal gradient zone melting processing.
|
|
|
3982269 |
Semiconductor devices and method, including TGZM, of making same
A homogeneous integrated power structure embodies solid state control or signal devices and power devices integrated monolithically to achieve optimum physical characteristics of each device...
|
|
|
3982268 |
Deep diode lead throughs
A body of semiconductor material has two major opposed surfaces. A region of recrystallized semiconductor material having solid solubility of a dopant material therein is disposed within, and...
|
|
|
3979230 |
Method of making isolation grids in bodies of semiconductor material
An isolation grid is produced by the migration of a metal-rich liquid zone of material through a body of semiconductor material. Planar orientation of the surface through which migration is...
|
|
|
3515574 |
METHOD FOR METALLIZING A BORON NITRIDE CONTAINING BODY
|
|
|
3510368 |
METHOD OF MAKING A SEMICONDUCTOR DEVICE
|
|
|
3001895 |
Semiconductor devices and method of making same
|
|
|
3000768 |
Semiconductor device with controlled zone thickness
|
|
|
2894862 |
Method of fabricating p-n type junction devices
|
|
|
2813048 |
Temperature gradient zone-melting
|