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7582920 |
Apparatus comprising an avalanche photodiode
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of...
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7560751 |
Semiconductor photo-detecting element
In a semiconductor photo-detecting element (an avalanche photodiode), a high-sensitivity element is obtained by incorporating a multiplication layer having high-performance multiplication...
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7538403 |
PIN diode structure with zinc diffusion region
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first...
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7525588 |
CMOS APS with stacked avalanche multiplication layer and low voltage readout electronics
An image sensor includes a pixel having a protection circuit connected to a charge multiplying photoconversion layer. The protection circuit prevents the pixel circuit from breaking down when the...
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7521737 |
Light-sensing device
A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are expitaxially grown in one single...
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7501698 |
Method and system for an improved power distribution network for use with a semiconductor device
Systems and methods for a structure for a power distribution network intended to distribute power from a PCB to a semiconductor device on a package. These improved power distribution networks may...
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7453131 |
Photodiode detector and associated readout circuitry
A photodetector circuit incorporates an APD detector structure ( 10 ) comprising a p− silicon handle wafer ( 12 ) on which a SiO 2 insulation layer ( 14 ) is deposited in known manner. During...
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7432537 |
Avalanche photodiode structure
An avalanche photodiode (APD) includes an anode layer, a cathode layer, an absorption layer between the anode layer and the cathode layer, a first multiplying stage between the absorption layer and...
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7378689 |
Apparatus comprising an avalanche photodiode
Avalanche photodiodes are provided, wherein the APDs provide both high optical coupling efficiency and low dark count rate. The APDs are formed such that their cap layer has an active region of...
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7348608 |
Planar avalanche photodiode
A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact...
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7332785 |
Dye-sensitized solar cell
A dye-sensitized solar cell with high conversion efficiency is provided. The dye-sensitized solar cell according to the present invention has, between an electrode ( 2 ) formed on a surface of a...
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7326970 |
Metamorphic avalanche photodetector
A metamorphic avalanche photodetector includes a substrate, and an active structure supported on the substrate. The active structure has a metamorphic absorption structure that absorbs light and...
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7271376 |
Avalanche photodiode with reduced sidewall defects
A photodetector circuit incorporates an avalanche photodiode structure having a contact layer ( 14 ) forming an ohmic contact over an annular region ( 18 ) with the annular guard ring ( 8 ). In the...
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7268339 |
Large area semiconductor detector with internal gain
A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped...
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7233051 |
Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
A semiconductor waveguide based optical receiver is disclosed. An apparatus according to aspects of the present invention includes an absorption region including a first type of semiconductor...
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7216423 |
Manufacturing process for smaller active areas in flat panel X-ray detectors
The present invention relates to a method for forming an active area or flat panel in an X-ray detector device. The method comprises forming at least one flat form factor panel in a first size on a...
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7196390 |
Solid state image wavelength converter
A method for encoding information that is encoded in spatial variations of the intensity of light ( 24 ) of a first wave-length into light of a second wavelength, the method comprising: generating...
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7122453 |
Methods of patterning radiation, methods of forming radiation-patterning tools, and radiation-patterning tools
The invention includes a method of patterning radiation. The radiation is simultaneously passed through a structure and through a subresolution assist feature that is transmissive of at least a...
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7098519 |
Avalanche radiation detector
The invention relates to an avalanche radiation detector comprising a semiconductor substrate (HK) with a front side (VS) and a back side (RS), an avalanche region (AB) which is arranged in the...
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7075165 |
Embedded waveguide detectors
A method of fabricating a detector that involves: forming a trench in a substrate, the substrate having an upper surface; forming a first doped semiconductor layer on the substrate and in the...
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7061065 |
Light emitting diode and method for producing the same
The present invention discloses an LED (light emitting diode), which primarily includes a transparent window, such as a glass substrate, an LED epitaxial layer including at least an active layer,...
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7057253 |
Combination of intrinsic and shape anisotropy for reduced switching field fluctuations
A magnetic memory cell and method of manufacturing thereof, wherein the angle between the shape anisotropy axis and the intrinsic anisotropy axis of the magnetic material layer is optimized to...
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7045761 |
Self-pixelating focal plane array with electronic output
The present application is directed to a self-pixelating focal plane array and includes a photodetection portion having a body defining a self-pixelating active detection region, and a readout...
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7038251 |
Semiconductor device
A semiconductor device has a structure reducing resistances to a high frequency current. The semiconductor device includes a semi-insulating substrate, a first n-type layer made of a compound...
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7002156 |
Detection system including avalanche photodiode for use in harsh environments
A detection system for detecting gamma rays including a scintillator crystal for receiving at least one gamma ray and generating at least one ultraviolet ray and an avalanche photodiode for...
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6995444 |
Ultrasensitive photodetector with integrated pinhole for confocal microscopes
Photodetector device comprising a semiconductor substrate ( 1 ) of a first type of conductivity connected to a first electrode ( 2 ). Said substrate comprises an active area ( 4 ) made up of...
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6963089 |
Avalanche photo-detector with high saturation power and high gain-bandwidth product
An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output...
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6956273 |
Photoelectric conversion element and solid-state image sensing device, camera, and image input apparatus using the same
In a photoelectric conversion element which is formed by alternately stacking a region of a first conductivity type and a region of a second conductivity type as a conductivity type opposite to the...
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6956251 |
On-p-GaAs substrate Zn1−xMgxSySe1−y pin photodiode and on-p-GaAs substrate Zn1−xMgxSySe1−y avalanche photodiode
A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic...
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6936868 |
Sequential mesa avalanche photodiode capable of realizing high sensitization and method of manufacturing the same
A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of...
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6936806 |
Photoelectric conversion device and solid-state image sensing device using the same
Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered...
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6919609 |
High speed detectors having integrated electrical components
An opto-electronic device configured as a photodetector has a capacitor and/or resistor monolithically formed on a surface of the photodetector. The capacitor capacitively couples the AC ground of...
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6900512 |
Light-receiving module
This invention relates to a light-receiving module in which transmission impedance of lead terminals are matched by simple method. The module has a semiconductor light-receiving device, such as a...
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6894324 |
Silicon-on-insulator diodes and ESD protection circuits
A silicon-on-insulator (SOI) gated diode and non-gated junction diode are provided. The SOI gated diode has a PN junction at the middle region under the gate, and which has more junction area than...
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6894322 |
Back illuminated photodiodes
A highly reflecting back illuminated diode structure allows light that has not been absorbed by a semiconductor absorbing region to be back reflected for at least a second pass into the absorbing...
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6885040 |
Wavelength-selective photo detector
A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption...
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6885039 |
Semiconductor photodetector and avalanche photodiode
There is provided a semiconductor photodetector which comprises (i) an InP substrate( 1 ), (ii) an optical waveguide( 5 ) having an N-type semiconductor layer( 32 ) formed on the InP substrate( 1...
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6870239 |
Avalanche photodiode having an extrinsic absorption region
An avalanche photodiode comprises, in various implementations, a p-doped absorption region fabricated from a first material and joined along a hetero-junction with one side of an intrinsic...
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6861681 |
On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode
A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic...
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6858912 |
Photodetector circuit
A photodetector circuit incorporates an avalanche photodiode (APD) 300 produced by epitaxy on a CMOS substrate 302 with implanted n-well 304 and p-well 306. The n-well 304 has an implanted p+ guard...
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6838741 |
Avalanche photodiode for use in harsh environments
An aspect of the present invention is directed to an avalanche photodiode (APD) device for use in oil well drilling applications in harsh, down-hole environments where shock levels are near 250...
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6826637 |
Implementing for buffering devices in circuit layout to ensure same arriving time for clock signal from source root to output bonding pads
An implementing method for buffering devices is provided, so as to dispose the buffering devices on a chip. The chip includes a signal source root and the number X of output bonding pads, in which...
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6800914 |
Semiconductor photodetector device and manufacturing method thereof
Reducing a dark current in a semiconductor photodetector provided with a second mesa including an regrown layer around a first mesa. An n-type buffer layer, a n-type multiplication layer, a p-type...
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6747296 |
Avalanche photodiode multiplication region and avalanche photodiode with low impact ionization rate ratio
An avalanche photodiode charge-carrier multiplication region comprises a first region fabricated from a first material having a first impact ionization threshold and a second region joined to the...
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6730979 |
Recessed p-type region cap layer avalanche photodiode
A recessed p-type region cap layer avalanche photodiode ( 12 ) is provided. The photodiode ( 12 ) includes a semiconductor substrate ( 30 ) and a semiconductor stack ( 32 ), which is electrically...
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6724018 |
Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode
A blue-violet-near-ultraviolet pin-photodiode with small dark current, high reliability and long lifetime. The pin-photodiode has a metallic n-electrode, a n-ZnSe single crystal substrate, an...
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6713768 |
Junction-side illuminated silicon detector arrays
A junction-side illuminated detector array of pixelated detectors is constructed on a silicon wafer. A junction contact on the front-side may cover the whole detector array, and may be used as an...
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6707075 |
Method for fabricating avalanche trench photodetectors
A method of forming an avalanche trench optical detector device on a semiconductor substrate, comprising forming a first set and a second set of trenches in the substrate, wherein trenches of the...
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6635908 |
Burying type avalanche photodiode and fabrication method thereof
The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a...
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6614086 |
Avalanche photodetector
There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located...
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