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4210923 |
Edge illuminated photodetector with optical fiber alignment
A silicon photodetector capable of long wavelength response which includes means for aligning an optical fiber for edge illumination. The detector is formed in a silicon body (11 and 12) with major...
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4202000 |
Diode capable of alternately functioning as an emitter and detector of light of the same wavelength
The invention relates to a diode capable of alternately operating as a detector and emitter of light in the same frequency band. This diode comprises an active zone disposed between two localizing...
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4142200 |
Semiconductor photodiodes
The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is...
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4129878 |
Multi-element avalanche photodiode having reduced electrical noise
Avalanche photodiodes include a substrate of a high resistivity material having at least a first surface. The substrate is of a particular conductivity type. In the substrate and at the first...
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4128843 |
GaP Directed field UV photodiode
A GaP photodiode having a shallow PN junction and an internal directed surface electric field exhibits high quantum efficiency in detecting ultraviolet wavelengths.
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4127932 |
Method of fabricating silicon photodiodes
Described is a method of fabricating front-illuminated silicon photodiodes having high quantum efficiency, a short response time, (high gain and low excess noise in the case of avalanche diodes),...
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4083062 |
Avalanche photodiode with reduced avalanche breakdown voltage
An avalanche photodiode has a rectification barrier formed by an n + -layer and a p-type layer of a low doping concentration. A thin p-layer having a higher doping concentration than a p - -layer...
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4037244 |
Avalanche photodiode
An avalanche photodiode has an avalanche voltage relatively low. In one of the two elements of the junction there is a zone doped more heavily than said element and having the same conductivity type.
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3959646 |
Avalanche photo-diodes
An avalanche photodiode whose avalanche voltage is relatively low, comprises a detector region, which is p-type doped to sufficiently small depth at its central region in order for the reverse...
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3921191 |
Photoresponsive junction device having an active layer of altered conductivity glass
The conductivity of a body of ionically impermeable glassy amorphous material is controllably altered by driving or diffusing suitable impurities into the body of material. Impurities are driven...
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3886579 |
Avalanche photodiode
A photodiode comprises a four-layer hyperabrupt junction semiconductor having p +n νn + or n +p πp + structure and a guard ring of p or n type layer, enclosing the p-n junction defined in the p...
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3745429 |
CONTROLLABLE JUNCTION DEVICE AND RADIATION-GENERATING METHOD OF UTILIZING IT
A controllable junction device and a radiation-generating method of utilizing said device; more particularly, a controllable junction device which usually functions as a resistor but is also able...
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3745424 |
SEMICONDUCTOR PHOTOELECTRIC TRANSDUCER
A semiconductor photoelectric transducer comprising a unitary structure of an avalanche photo-diode and an amplifying transistor.
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3622844 |
AVALANCHE PHOTODIODE UTILIZING SCHOTTKY-BARRIER CONFIGURATIONS
An avalanche Schottky-barrier photodiode includes a symmetrical metallic grid network deposited over a semiconductor substrate and surrounded by one or more metallic guard rings. When a...
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3560755 |
HIGH SENSITIVITY RADIATION DETECTOR
A photodetector diode operating with avalanche characteristics is energized through a regulator which, when the temperature of this diode varies, compensates for this variation by acting upon the...
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3544794 |
AVALANCHE PHOTODIODE DETECTION APPARATUS
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3534231 |
LOW BULK LEAKAGE CURRENT AVALANCHE PHOTODIODE
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3514846 |
METHOD OF FABRICATING A PLANAR AVALANCHE PHOTODIODE
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3453435 |
AVALANCHE PHOTODETECTOR UTILIZING AN A-C COMPONENT OF BIAS FOR SUPPRESSING MICROPLASMAS
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3448351 |
CRYOGENIC AVALANCHE PHOTODIODE OF INSB WITH NEGATIVE RESISTANCE CHARACTERISTIC AT POTENTIAL GREATER THAN REVERSE BREAKDOWN
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3403306 |
Semiconductor device having controllable noise characteristics
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