Matches 101 - 150 out of 171 < 1 2 3 4 >
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5444274 Photodetector and opto-electronic integrated circuit  
A photodetector of the present invention is devised to reduce the dark current by employing a novel guard ring structure suitable for a mesa type photodiode (PD). Namely, the PD of the present...
5444280 Photodetector comprising avalanche photosensing layer and interline CCD readout layer  
The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally...
5438217 Planar avalanche photodiode array with sidewall segment  
A planar photosensitive device, such as an array of APDs, includes a planar block of n type semiconductor material having a plurality of p type wells in the block surrounded by a foundation of n...
5346837 Method of making avalanche photodiode  
A method of making an avalanche photodiode includes depositing a light-absorbing semiconductor layer of a first conductivity type on a semiconductor substrate of the first conductivity type;...
5343055 Avalanche photodiode structure with Mg doping and method  
An avalanche photodiode structure has a graded magnesium guard ring formed by diffusion from an organic-metallic source. Suitably masked APD layers are placed in an open flow reactor and heated...
5338947 Avalanche photodiode including a multiplication layer and a photoabsorption layer  
An avalanche photodiode includes a multiplication layer and a photoabsorption layer, and the multiplication layer is formed of a semiconductor superlattice structure composed of a number of well...
5311044 Avalanche photomultiplier tube  
A small, rugged photomultiplier tube is achieved by closely spacing a large area avalanche "photodetector" with respect to a photocathode in an opaque casing having a window for incident light. The...
5311038 Photoelectric converter with electron injection preventive layer  
An improved photoelectric converter with reduced dark current includes a first electrode on a substrate covered by a semiconductor layer for photoelectric conversion. A second electrode is disposed...
5281844 Avalanche photodiode  
A novel avalanche photodiode includes an n-type semiconductor substrate, an n-type light-absorbing layer on the substrate, an n-type multiplication layer on the light-absorbing layer, and a p-type...
5272364 Semiconductor photodetector device with short lifetime region  
A semiconductor photodetector device includes a second conductivity type region extending through a first conductivity type window layer to a first conductivity type light absorbing layer and a...
5233209 Guard ring structure with graded Be implantation  
An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5×10 14 per cm 2 and subsequently annealed to provide a guard ring profile with a p+core...
5204539 Avalanche photodiode with hetero-periodical structure  
An avalanche photodiode includes an avalanche multiplication layer of a hetero-periodical structure consisting of alternately provided barrier and well layers. Each barrier layer includes a...
5189309 Avalanche photodiode with AliNAsP cap layer  
A photodiode having a GaInAs light-absorbing layer on an InP substrate which can reduce temperature dependence of the spectral responsivity as well as enable the optical power measurement with less...
5179430 Planar type heterojunction avalanche photodiode  
In a planar type heterojunction avalanche photodiode comprising a light absorbing layer of a first conduction type provided on a substrate of the first conduction type, an avalanche multiplication...
5162885 Acoustic charge transport imager  
An Acoustic Charge Transport Imager, suitable for use as a High Definition Television (HDTV) camera element, is disclosed in which an array of amorphous hydrogenated silicon based avalanche...
5157473 Avalanche photodiode having guard ring  
For providing an avalanche photodiode having a good guard ring effect and a high speed response, a body of semiconductor materials is prepared, which includes a window layer of n-type InP...
5144381 Semiconductor light detector utilizing an avalanche effect and having an improved guard ring structure  
A semiconductor light detector includes a first semiconductor layer of a first conductivity type having a multi-layer structure including a light absorbing layer and an avalanche multiplicating...
5132747 Avalanche photo diode  
An avalanche photo diode in which the guard ring portion and the front of the pn junction of the light receiving portion are formed at the same depth from the surface of an InP layer, so that the...
5115291 Electrostatic silicon accelerometer  
A solid state accelerometer having an all silicon sensor for measuring accelerational and gravitational forces. The accelerometer measuring system also has associated electronics that include an...
5101255 Amorphous photoelectric conversion device with avalanche  
Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals...
5075750 Avalanche photodiode with adjacent layers  
An avalanche photodiode (APD) includes an InP layer, a carrier multiplication layer, a light-absorbing layer, a light-reflecting layer, and an electrode. The carrier multiplication layer is...
5057891 Planar heterojunction avalanche photodiode  
A planar heterojunction avalanche photodiode (APD) having a first semiconductor layer of a first conductivity type for generating carriers by absorbing light, a second semiconductor layer of the...
5021854 Silicon avalanche photodiode array  
A wafer of neutron transmutation doped silicon having a pn junction between extended opposite surfaces is formed with bevelled edges. A plurality of reverse biased signal contacts is disposed on...
4972242 Silicon avalanche photodiode with low multiplication noise  
There is provided an n + -p-π-p + APD having a shallow and abrupt p-n junction located about 1 to 2 μm into the APD and having a p-type conductivity region containing acceptors in an...
4935795 Avalanche photodiode with uniform avalanche multiplication  
An APD of the invention has its avalanche multiplication layer, made of a material which can cause a resonant impact ionization therein, between its window layer having a big band gap energy and...
4933731 Superlattice imaging device  
A semiconductor imaging element for generating an electrical signal representing the intensity of incident light includes an avalanche photodiode, having sequential p-type, intrinsic, and n-type...
4894526 Infrared-radiation detector device  
A narrow-bandwidth, high-speed infrared radiation detector is based on tunneling of photo-excited electrons out of quantum wells. Infrared radiation incident on a superlattice of doped quantum...
4857973 Silicon waveguide with monolithically integrated Schottky barrier photodetector  
The invention comprises a Schottky barrier type infrared photodetector which is monolithically integrated on a silicon waveguide. A Schottky barrier contact is positioned directly on a silicon...
4840916 Process for fabricating an avalanche photodiode  
Disclosed is an avalanche photodiode wherein a light absorption layer and a multiplication layer are first grown on substrate. The multiplication layer is then mesa-etched and another semiconductor...
4801990 HgCdTe avalanche photodiode  
An HgCdTe avalanche photodiode for use at ambient temperature comprises an Hg 1 -x Cd x Te crystal substrate in which x is chosen between substantially 0.35 and substantially 0.5, a PN junction is...
4745451 Photodetector array and a method of making same  
A photodetector array having reflector means positioned over the low response regions between elements of the array. Light incident on the reflector means is reflected into a high response region...
4722907 Method of forming an avalanche semiconductor photo-detector device and a device thus formed  
An avalanche photodetector of the heterojunction type comprises an intermediate region between two end regions made from distinct semiconductor materials. The intermediate region comprises a...
4684969 Heterojunction avalanche photodiode  
An avalanche photodiode comprising an uppermost layer of one conductivity type, a second layer of the other conductivity type wherein the electrons or hole having the greater ionization rate are...
4654678 Avalanche photodiode  
The invention is an improved avalanche photodiode having reduced electrical noise arising from spurious surface generation of charge carriers. The avalanche photodiode includes active and...
4616247 P-I-N and avalanche photodiodes  
High-speed p-i-n and avalanche photodetectors (photodiodes) use a heavily doped buried layer to greatly limit minority carriers generated by incident light in the buried layers and the substrates...
4587544 Avalanche photodetector  
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region,...
4586066 Avalanche photodetector  
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region,...
4586068 Solid state photomultiplier  
A solid state photon detector includes a semiconducting blocking layer with sufficiently low donor and acceptor concentrations that substantially no charge transport can occur by an impurity...
4586067 Photodetector with isolated avalanche region  
The invention relates to an avalanche photodetector having a charge-multiplication region which is spatially separated from the detector surfaces. This photodetector includes an absorptive region,...
4561007 Double mesa avalanche photodetector  
The invention relates to a photodetector wherein the avalanche region is separated from the detector surfaces by a region in which the electric field under reverse bias will be less than in the...
4505765 Manufacturing method for a planar photodiode with hetero-structure  
In a method for manufacturing an avalanche photodiode with an epitaxial layer sequence on a carrier body, the carrier body is not the substrate for an epitaxy of the photodiode. One of the...
4463368 Silicon avalanche photodiode with low k.sub.eff  
An n-p-π-p + Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater...
4458260 Avalanche photodiode array  
The invention is an APD array having a plurality of p-n junctions. The p-n junctions comprise a plurality of separate regions which extend a distance into a semiconductor body from a surface...
4403397 Method of making avalanche photodiodes  
A quadrant avalanche photodiode with large surface areas is made using photolithographic planar technology. The use of proton bombardment creates semi-insulating material around the quadrants....
4366377 Dual sensitivity optical sensor  
A dual sensitivity photodetector comprising a central region comprising a relatively high sensitivity reach through avalanche photo diode and a surrounding region comprising a relatively lower...
4326211 N+PP-PP-P+ Avalanche photodiode  
A radiation-sensitive semiconductor device includes a radiation-detecting avalanche diode which has a semiconductor layer structure made up of four layers of the same type conductivity. The fourth...
4323909 Planar avalanche diode with a breakdown voltage between 4 and 8 volts  
A diode comprising a N-type substrate in which is formed a P-type guard ring and a central diffusion of the same type but of reduced depth. Part of the central diffusion layer is interrupted by a...
4321611 Avalanche photodetector for fiber-optical system and method of making same  
A detector for luminous radiation transmitted by an optical fiber comprises an avalanche photodiode whose light-receiving surface, separated by a high-resistivity portion of a semiconductor body...
4277793 Photodiode having enhanced long wavelength response  
The light entry surface or back surface of an avalanche or p-i-n photodiode is contoured in a regular array of indentations which are hemispherical or almost hemispherical in shape. Light incident...
4215358 Mesa type semiconductor device  
A P type semiconductor layer is epitaxially grown on an N + type semiconductor substrate to form a PN junction between them so as to expose its circumference to the peripheral surface of the...
Matches 101 - 150 out of 171 < 1 2 3 4 >