Matches 51 - 100 out of 171 < 1 2 3 4 >
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6614086 Avalanche photodetector  
There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located...
6583482 Hetero-interface avalance photodetector  
An avalanche photodetector (APD) is made from composite semiconductor materials. The absorption region of the APD is formed in a n-type InGaAs layer. The multiplication region of the APD is formed...
6570083 Photovoltaic generators with light cascade and varying electromagnetic flux  
A photovoltaic generator including at least one photovoltaic cell, and a transparent matrix placed with at least one optically active material with an absorption wavelength λa and a reemission...
6541836 Semiconductor radiation detector with internal gain  
An avalanche drift photodetector (ADP) incorporates extremely low capacitance of a silicon drift photodetector (SDP) and internal gain that mitigates the surface leakage current noise of an...
6489659 Non-hermetic APD  
A non-hermetic APD for operation in a moisture-containing ambient comprises an InP/InGaAsP-containing Group III-V compound semiconductor body and a p-n junction formed in the body. Typically the...
6445020 Semiconductor light-receiving device  
A semiconductor light-receiving device 1 a comprises a first InP layer 12 having a first conductive type region 20 a , a second InP layer 16 having a second conductive type, and an InGaAs...
6437233 Solar cell having multi-quantum well layers transitioning from small to large band gaps and method of manufacture therefor  
A solar cell comprises a superstrate formed from a material that is transparent to light, a first layer formed of delta doped silicon, a plurality of layers formed from semiconductor materials,...
6392282 BiCMOS-integrated photodetecting semiconductor device having an avalanche photodiode  
An APD is provided, said APD having an N-type first buried region (cathode) formed on a P-type substrate, and P-type first, second layer, and fourth semiconductor region (anode) formed thereon. A...
6384462 Planar hetero-interface photodetector  
A planar avalanche photodetector (APD) is fabricated by forming a, for example, InGaAs absorption layer on a p + -type semiconductor substrate, such as InP, and wafer-bonding to the absorption...
6365951 Methods on constructing an avalanche light emitting diode  
Methods of laying out avalanche light emitting diodes (LEDs) are described in which a heavily impurity doped region of one type of polarity, a second, lighter doped region of like polarity, and a...
6359322 Avalanche photodiode having edge breakdown suppression  
The present disclosure relates to an avalanche photodiode having edge breakdown suppression. The photodiode comprises a p contact and an n contact, as well as a plurality of device layers disposed...
6353238 Method of using a wide wavelength range high efficiency avalanche light detector with negative feedback  
A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The...
6316715 Multijunction photovoltaic cell with thin 1st (top) subcell and thick 2nd subcell of same or similar semiconductor material  
A multijunction photovoltaic cell comprises a first subcell that initially receives incident light upon the photovoltaic cell, with the first subcell being made of a first material system, having a...
6265727 Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions  
A solar blind p-i-n photodiode where the active i-region has a bandgap larger than the bandgap of one or both of the n-type and p-type regions. The preferred embodiment photodiode is GaN based and...
6222209 Wide wavelength range high efficiency avalanche light detector with negative feedback  
A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The...
6188083 Diodes with quantum-wave interference layers  
A pin diode, having a p-layer, an n-layer, and an i-layer sandwiched by the p-layer and the n-layer, is constituted by a quantum-wave interference unit with a plurality of pairs of a first layer W...
6166320 Tandem solar cell  
A solar cell that is capable of having a thickness optimum for the highest photoelectric conversion efficiency and achieves reduction of carrier recombination loss is provided. For this purpose, a...
6111299 Active large area avalanche photodiode array  
A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a...
6104047 Avalanche photodiode with thin built-in depletion region  
The present invention relates to an avalanche photodiode having a simple structure, high reliability, and a high speed response on the order of Gbps. This photodiode is formed by depositing...
6072201 Hole-injection type separate absorption and multiplication avalanche photodiode  
An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and...
5977602 Semiconductor device having an oxygen-rich punchthrough region extending through the length of the active region  
A semiconductor device having an oxygen-rich punchthrough region under the channel region, and a process for fabricating such a device are disclosed. In accordance with one embodiment, a...
5912478 Avalanche photodiode  
An avalanche photodiode having an absorption zone, a multiplication zone, and a transition zone disposed between the absorption zone and the multiplication zone, the transition zone being doped and...
5880490 Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation  
The disclosed invention includes an apparatus and method for detecting radiation in a detector. The radiation to be detected ionizes the atoms in the intrinsic silicon lattice of the detector to...
5874752 Light detecting device  
A light detecting device includes a first conductivity type semiconductor substrate; an insulating semiconductor window layer disposed on the substrate; a concavity in a region of the window layer...
5866936 Mesa-structure avalanche photodiode having a buried epitaxial junction  
A mesa-structure avalanche photodiode in which a buffer region in the surface of the mesa structure effectively eliminates the sharply-angled, heavily doped part of the cap layer that existed...
5818096 Pin photodiode with improved frequency response and saturation output  
A pin photodiode having a structure capable improving the frequency response and the saturation output while maintaining the effective internal quantum efficiency and CR time constant. A pin...
5808350 Integrated IR, visible and NIR sensor and methods of fabricating same  
An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that...
5783838 Non-single crystalline semiconductor photo detector with super lattice  
Described is a semiconductor photo detector comprising, between two electrodes, at least one of said electrodes being a transparent electrode, an optical absorption layer which is composed of a...
5767560 Photoelectric conversion device and method of driving the same  
A photoelectric conversion device including: a photoelectric conversion portion having a light absorbing layer disposed between charge injection inhibition layers and having a predetermined...
5763903 Avalanche photodiode for light detection  
An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second...
5757057 Large area avalanche photodiode array  
A large area avalanche photodiode device that has a plurality of contacts formed on a bottom side that are isolated from each other by various kinds of isolation structures. In one embodiment, a...
5744849 Photoelectric converting device and image processing apparatus using the same  
A photoelectric converting device has a photoelectric converting part which consists of a light absorbing layer of a predetermined forbidden band width Eg1 and a carrier multiplying layer,...
5744850 Photoelectric conversion semiconductor device  
A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N + -type impurity domain whose impurity concentration is higher...
5719414 Photoelectric conversion semiconductor device with insulation film  
A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second...
5693151 Photovoltaic device  
A photovoltaic means, e.g. a solar cell in which mobile charge carriers are generable by incident optical radiation contains a semiconductor body of a material having such an energy band structure...
5665998 Geometric enhancement of photodiodes for low dark current operation  
A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small...
5656835 Solid state imager and its driving method  
A very high sensitive solid state imager is realized by employing a multiplication process which includes avalanche multiplication of charges as generated by an incident light at each of several...
5654578 Superlattice avalanche photodiode with mesa structure  
A superlattice avalanche photodiode with a mesa structure is provided, which enables to keep its noise characteristic low for a long time without decreasing the dynamic range for high-speed...
5610416 Avalanche photodiode with epitaxially regrown guard rings  
A SAM avalanche photodiode formed with an epitaxially regrown guard ring and a planar P-N junction defined between a cap layer and a multiplication layer. The multiplication layer is part of a...
5602413 Avalanche phototransistor  
A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical,...
5589008 Photovoltaic cell and method for fabrication of said cell  
A photovoltaic cell (10) having a semiconductor substrate (11), a front passivation layer (12) arranged on the substrate, an emitter layer (14) having a first conductivity type (p or n), a front...
5583352 Low-noise, reach-through, avalanche photodiodes  
A new reach-through APD structure which includes a five-layer, double-drift-region, double-junction device, having a p + -p-n-p - -n + structure. The middle three layers of the new APD...
5569942 Avalanche photo-diode for producing sharp pulse signal  
An n - -InGaAs first photo-absorbing layer, an n + -InP multiplication layer, and a p + -type photo-incident region are formed on the first major surface of an n + -InP substrate. An n - ...
5552629 Superlattice avalance photodiode  
A semiconductor device according to the invention includes an electric field buffer layer, a superlattice multiplication layer and a cap layer, which are laminated. Around a mesa side surface, a...
5539221 Staircase avalanche photodiode  
An avalanche photodiode is provided which consists of a staircase APD with a periodic multilayer structure graded in composition from InAlAs to InGa x Al (1-x) As (x>0.1) as the multiplication...
5504365 Spatial light modulation device  
A spatial light modulation device, in which at least a photoconductor structure and a light modulator have a multilayer structure. In this spatial light modulation device, the photoconductor...
5457327 Avalanche photodiode with an improved multiplication layer  
The invention provides an avalanche photodiode multilayer structure comprising an absorption layer for absorbing photons and subsequent generation of electron hole pairs, a field relaxation layer...
5453860 Spatial light modulator having a photoconductor with grooves and a quantum efficiency greater than unity  
A spatial light modulator includes: a modulating layer having optical properties changeable depending on the strength of an applied electric field; a pair of transparent electrode layers...
5453629 Photoelectric conversion device having at least one step-back layer  
A photoelectric conversion device includes a plurality of photoelectric conversion units and a signal output unit. The signal output unit has at least one storage device for storing electrical...
5446308 Deep-diffused planar avalanche photodiode  
A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in...
Matches 51 - 100 out of 171 < 1 2 3 4 >