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7623166 |
Solid-state imaging device with high pixel count that includes color filter with high color reproducibility and camera that uses it
A solid-state imaging device is composed of a P-type semiconductor layer, an interlayer insulation film, a multilayer interference filter and condenser lenses which have been successively laminated...
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7622786 |
EMI shielding for imager devices
A module that provides EMI shielding for imager devices is disclosed which includes a die comprising an imager device and a plurality of contact pads, a stack positioned above the imager device,...
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7622057 |
Phosphor and vacuum ultraviolet excited light-emitting device
A phosphor and a vacuum ultraviolet excited light-emitting device are disclosed. The phosphor comprises a compound represented by the following formula (1)
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7619672 |
Retrograde well structure for a CMOS imager
A retrograde well structure for a CMOS imager that improves the quantum efficiency and signal-to-noise ratio of the imager. The retrograde well comprises a doped region with a vertically graded...
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7618839 |
Pinned photodiode structure and method of formation
An imager having a photodiode with a shallow doping profile with respect to the top surface of a substrate is disclosed. An imager with a graded pinned surface layer, self-aligned to a gate stack...
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7616904 |
Waveguide photodetector with integrated electronics
A germanium on silicon waveguide photodetector disposed on a silicon on insulator (SOI) substrate. The photodetector is incorporated into a section of a planar silicon waveguide on the substrate....
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7612425 |
Image sensor with a transparent plate having refractive index changing regions
An image sensor includes: a light source that irradiates a light on an object; a lens body that converges a reflection of the light from the object; a plurality of IC chips that receive the...
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7612393 |
Active photosensitive structure with buried depletion layer
An imager pixel has a photosensitive JFET structure having a channel region located above a buried charge accumulation region. The channel region has a resistance characteristic that changes...
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7612392 |
Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same
Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor...
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7611393 |
Electroluminescent devices and displays with integrally fabricated address and logic devices fabricated by printing or weaving
Improved electroluminescent and photonic devices with integrated logic and control circuits are disclosed. Low mobility, contact barrier, space charge limitation and carrier balancing are provided...
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7608906 |
Simultaneous unipolar multispectral integrated technology (SUMIT) detectors
A multi-color photo sensor having a first photodiode with a first p-type layer and a first n-type layer, the first photodiode generates charge when illuminated with photons of a first wavelength...
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7608903 |
Image sensor with SOI substrate
An imager pixel utilizing a silicon-on-insulator substrate, a photodiode in said substrate below the buried oxide, and a dual contact to said photodiode and methods of forming said imager pixel....
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7605398 |
Apparatus of high dynamic-range CMOS image sensor and method thereof
The present invention discloses an apparatus of high dynamic-range CMOS image sensor and method thereof. The present invention utilize a pixel circuit outputting an output signal, wherein the pixel...
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7598581 |
Image sensor with decreased optical interference between adjacent pixels
An image sensor with decreased optical interference between adjacent pixels is provided. An image sensor, which is divided into a pixel region and a peripheral region, the image sensor including a...
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7595540 |
Semiconductor device and method of manufacturing the same
A semiconductor device including a package ( 2 ) having a plurality of wall portions ( 9 a ) and a plurality of conductor portions ( 4 ), a semiconductor element such as a solid-state image pickup...
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7595217 |
Method of manufacturing a CMOS image sensor
A CMOS image sensor may include at least one of: a semiconductor substrate over which a photodiode and transistors are formed; passivation layers formed over a semiconductor substrate; and color...
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7592654 |
Reduced crosstalk CMOS image sensors
CMOS image sensor having high sensitivity and low crosstalk, particularly at far-red to infrared wavelengths, and a method for fabricating a CMOS image sensor. A CMOS image sensor has a substrate,...
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7586200 |
Light emitting diode chip with reflective layer thereon
A light emitting diode including a substrate, a semiconductor layer, multiple electrodes, a passivation layer, multiple under bump metallurgy (UBM) layers and a reflective layer is provided. The...
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7586168 |
High performance photosensor
A photosensor includes a photovoltage generator for generating a photovoltage, and a comparator for determining a number of integer multiples of a threshold voltage associated with the photosensor....
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7586167 |
Detecting plasmons using a metallurgical junction
A sensor device includes a substrate having first and second regions of first and second conductivity types, respectively. A junction having a band-gap is formed between the first and second...
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7586166 |
Electronic and optoelectronic devices having nanoparticles configured by patterned ferroelectric material
Disclosed are electronic, plasmonic and opto-electronic components that are prepared using patterned photodeposited nanoparticles on a substrate surface. Also disclosed are ferroelectric...
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7582909 |
Mounting and adhesive layer for semiconductor components
An assembly and adhesive layer for semiconductor components is arranged between a silicon support (submount) and an electronic functional element for the formation of an electrically-conducting...
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7564079 |
Solid state imager device with leakage current inhibiting region
In a case when a structure of forming a p+ layer on a substrate rear surface side is employed in order to prevent dark current generation from the silicon boundary surface, various problems occur....
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7560748 |
Light emitting diode unit
A light emitting diode unit including a base ( 100 ) made of anodized aluminum and a printed board ( 101 ) attached to the base ( 100 ) and the printed board ( 101 ) including a predetermined...
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7557418 |
Semiconductor photoreceptor device
A semiconductor light detecting device includes an n-contact layer selectively disposed on an Fe—InP substrate. An optical waveguide layer is disposed on the n-contact layer and includes an...
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7557397 |
Pixel with asymmetric transfer gate channel doping
A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion...
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7557391 |
Organic light-emitting display device
An organic light-emitting display device wherein an IR drop across a first electrode can be prevented. The organic light-emitting display device includes a substrate; a plurality of stripe-shaped...
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7551329 |
Led chip mounting structure and image reader having same
An LED chip mounting structure provided by the present invention includes a wiring board with a mounting pad an LED chip with an electrode facing the mounting pad a bump disposed between the...
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7550814 |
Solid-state imaging device
A solid-state imaging device including: a plurality of photosensitive cells, each having a photodiode, arranged on a semiconductor substrate ( 1 ) in a matrix; and a peripheral driving circuit that...
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7550811 |
Image pickup device and method of manufacturing the same
The present invention relates to an image pickup device, etc., having a structure such that electrostatic discharge is unlikely to occur when an FOP and a CCD reading part are joined. This image...
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7550731 |
Coversion apparatus and imaging system
A conversion apparatus includes a pixel region, on a substrate, including a plurality of pixels arranged in a matrix, with each pixel having a conversion element that converts radiation into...
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7547608 |
Polysilicon hard mask for enhanced alignment signal
A method is provided for forming a polysilicon layer on a substrate and aligning an exposure system with an alignment feature of the substrate through the polysilicon layer. In such method, a...
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7545011 |
Semiconductor mount
A mount for a semiconductor device has a first surface with at least one contact region and a second surface. The mount has a substrate to receive the second surface of the semiconductor device and...
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7544884 |
Manufacturing method for large-scale production of thin-film solar cells
A method of manufacturing improved thin-film solar cells entirely by sputtering includes a high efficiency back contact/reflecting multi-layer containing at least one barrier layer consisting of a...
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7544532 |
Infrared photodiodes and sensor arrays with improved passivation layers and methods of manufacture
InSb infrared photodiodes and sensor arrays with improved passivation layers and methods for making same are disclosed. In the method, a passivation layer of AlInSb is deposited on an n-type InSb...
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7542085 |
Image sensor with a capacitive storage node linked to transfer gate
A CMOS imaging system with increased charge storage capacitance of pixels yet decreased physical size, kTC noise and active area. A capacitor is linked to the transfer gate and provides a storage...
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7538404 |
Optical semiconductor device and method for manufacturing the same
An optical semiconductor device includes a first light receiving region and a second light receiving region provided on a substrate and the first and second light receiving regions include light...
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7538403 |
PIN diode structure with zinc diffusion region
A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first...
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7531885 |
Photoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus
A primary object of the present invention is to provide a photoelectric conversion apparatus with less leak current in a floating diffusion region. In order to obtain the above object, a...
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7527999 |
Cd1−xZnxS high performance TCR material for uncooled microbolometers used in infrared sensors and method of making same
A Cd 1-x Zn x S film material, with a high value of thermal coefficient of resistance, in the range of 1.5% to 3.7%. The Cd 1-x Zn x S material has excellent characteristics for use in a...
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7525131 |
Photoelectric surface and photodetector
Disclosed is a photoelectric surface including: a first group III nitride semiconductor layer that produces photoelectrons according to incidence of ultraviolet rays; and a second group III nitride...
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7518204 |
Semiconductor device
A semiconductor device includes a semiconductor substrate formed of at least two kinds of group III elements and nitrogen, an active layer formed on the semiconductor substrate, and a nitride...
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7518171 |
Photo diode and related method for fabrication
A method for fabricating a photo diode first involves providing a substrate. A doping area is then formed on the substrate. Afterwards, a dielectric layer, and a first poly-silicon layer are formed...
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7518143 |
Solid-state imaging device, line sensor and optical sensor and method of operating solid-state imaging device
A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state...
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7514666 |
Composite receiver assembly having a circuit board on which multiple receiver devices that operate on different sets of wavelengths are mounted
Multiple devices that operate at different wavelengths of light are incorporated into a single composite assembly to reduce the amount of space that is needed to incorporate the assembly into a...
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7508573 |
Optical switch structure
A structure of an optical switch makes the optical switch capable of receiving broadband signals. And the manufacturing procedure is simplified.
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7508046 |
Photodetector
A photodetector having a mechanism of suppressing light crosstalk includes a plurality of photodiodes disposed on a common semiconductor substrate, each photodiode including an absorption layer...
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7508044 |
End face sensor and method of producing the same
An end face sensor device and a method of producing the sensor device, where the sensor device has flexibility or bendability independent of its shape and is suitable for constructing various...
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7504666 |
Optical semiconductor package with compressible adjustment means
An optical semiconductor package includes a support with a passage to receive a ring holding a lens situated facing an optical sensor. The support has, in the passage, at least one local release...
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7498649 |
Electro-optical device and electronic apparatus
An electro-optical device includes an insulating substrate, a switching element, at least one PIN diode, and at least one reflector. The switching element includes a first polysilicon semiconductor...
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