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7053458 |
Suppressing radiation charges from reaching dark signal sensor
An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from...
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7053422 |
Solid-state self-emission display and its production method
The present invention provides a solid state light-emissive display apparatus of high brightness and efficiency, high reliability, and of thin type, and method of manufacturing the same at low...
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7042058 |
Image sensor with guard ring for suppressing radiation charges
An image sensor and method is provided to improve the measurement of a dark signal reference while substantially suppressing radiation charges that enter an active area of the image sensor from...
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7030453 |
Bolometric detector with an antenna
The invention relates to a bolometric detector comprising a receiving antenna ( 2 a , 2 b , 2 c , 2 d ) for collecting electromagnetic waves and a resistive load for converting the power of...
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7012327 |
Phased array antenna using (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates
A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”)...
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7002158 |
Solid-state radiation detector using a single crystal of compound semiconductor InSb
A high-purity InSb single crystal not artificially doped with impurities is used as a radiation detecting medium. In order to obtain diode characteristics, a Au.Pd alloy is used to form a surface...
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6969896 |
Photodetector biasing scheme
A photodetector having a semiconductor conversion layer is described. The photodetector is configured to receive x-rays incident on its substrate with the substrate-side contact biased so that the...
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6965169 |
Hybrid integrated circuit package substrate
A hybrid integrated circuit (IC) package substrate at least comprising a plurality of patterned conductive layers stacked over each other. The outermost patterned conductive layer has a plurality...
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6963118 |
Hybrid active and electronic circuit with evanescent coupling
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least...
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6911352 |
Semiconductor device and method of manufacturing same
A semiconductor device which is capable of suppressing short-circuit currents caused to flow through defective areas in a first semiconductor layer can be manufactured at high yield, by utilizing a...
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6909099 |
X-ray detector and method of fabricating therefore
An array substrate for use in an X-ray sensing device includes a silicon insulator on a thin film transistor. The silicon insulator is silicon nitride or silicon oxide that has a strong adhesive...
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6909159 |
Method and apparatus to make a semiconductor chip susceptible to radiation failure
Methods and apparatus are provided for reducing the overall radiation hardness of a semiconductor chip. A radiation detector and a failure memory are provided. A disable signal or signals is...
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6903432 |
Photosensitive device
A photosensitive device for enabling high speed detection of electromagnetic radiation. The device includes recessed electrodes for providing a generally homogeneous electric field in an active...
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6885788 |
Light-reception/emission device built-in module with optical and electrical wiring combined therein, method for producing the module and assembling member of the module
A light reception/emission device built-in module with optical and electrical wiring combined therein includes: an optical waveguide layer including a core portion and a cladding portion; first and...
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6872983 |
High speed optical transceiver package using heterogeneous integration
The invention includes an opto-electronic device with a device region having a bottom surface and a top surface, and a top emitting/illumination window, an isolation region, wherein the isolation...
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6870237 |
Repeated structure of nanometer thin films with symmetric or asymmetric configuration for SPR signal modulation
A symmetric or asymmetric multilayer structure based on the technique of surface plasmon resonance (SPR) has been applied for modulation of resonant angle and wavelength. The fabrication of this...
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6861719 |
Device for detecting three-dimensional electromagnetic radiation and method for making same
A device for detecting electromagnetic radiation including at least one detection circuit including a non-cooled thermal detector and an associated reading circuit, and a method for producing the...
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6849913 |
Integrated circuit including an inductor, active layers with isolation dielectrics, and multiple insulation layers
A semiconductor substrate made of P − type or P −− type silicon having a thickness of approximately 700 μm and a resistivity of 10 Ω·cm to 1000 Ω·cm is provided, a BOX layer with a...
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6798030 |
Two-dimensional image detecting device and manufacturing method thereof
In a two-dimensional image detecting device, an active-matrix substrate and an opposing substrate are bonded to each other via conductive connecting members and space keeping members, that are...
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6784434 |
Imaging array and method for manufacturing same
A method for fabricating a radiation detector including at least one Thin Film Transistor (TFT) includes forming a low resistance data line strap unitary with a light block element on the TFT.
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6764872 |
Microelectromechanical switch
A microelectromechanical switch includes a substrate, an insulator layer disposed outwardly from the substrate, and an electrode disposed outwardly from the insulator layer. The switch also...
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6762071 |
Method for fabricating a metal-oxide electron tunneling device for solar energy conversion
A method for fabricating an electron tunneling device on a substrate includes forming a first non-insulating layer on the substrate and providing a first amorphous layer. The method further...
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6756651 |
CMOS-compatible metal-semiconductor-metal photodetector
A novel photodetector CMOS-compatible photodetector is disclosed in which photo-generation of carriers (electrons) is carried out in the metal of the electrodes, rather than as electron-hole pairs...
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6753469 |
Very high efficiency, miniaturized, long-lived alpha particle power source using diamond devices for extreme space environments
A power source converts α-particle energy into electricity by coulomb collision in doped diamond films. Alpha particle decay from curium-244 creates electron-hole pairs by freeing electrons and...
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6747330 |
Current mirror circuit with interconnected control electrodies coupled to a bias voltage source
A current mirror circuit is described which includes a current input terminal ( 14 A), a current output terminal ( 14 B) and a common terminal ( 14 C). A first controllable semiconductor element (T...
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6740947 |
MRAM with asymmetric cladded conductor
An asymmetric cladded conductor structure for a magnetic field sensitive memory cell is disclosed. One or both of the conductors that cross the memory cell can include an asymmetric cladding that...
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6734516 |
Monolithic lead-salt infrared radiation detectors and methods of formation
A hybridized Lead-Salt infrared radiation detector includes a focal plane having a substrate and a sensitized, delineated Lead-Salt layer upon the substrate, the delineations forming a plurality of...
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6713954 |
Light-emitting element
A light-emitting element includes a transparent substrate, a III-V nitride semiconductor layer including rare earth metal elements which is formed on said transparent substrate, and an irradiation...
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6707126 |
Semiconductor device including a PIN photodiode integrated with a MOS transistor
A semiconductor device is provided which has high sensitivity and excellent electrical power saving due to a structure in which an element having a pin photodiode and a MOS transistor which are...
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6683360 |
Multiple or graded epitaxial wafers for particle or radiation detection
The present invention provides a particle or electromagnetic radiation sensor structure, comprising a substrate ( 13 ) having a major surface and a sensitive layer ( 16 ) on the major surface of...
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6642562 |
CMOS type solid imaging device
A solid imaging device including: a semiconductor substrate of a first conductivity type; a layer of a second conductivity type formed on a surface of the semiconductor substrate, the layer at...
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6639073 |
Ruthenium complex useful as sensitizer, dye-sensitized oxide semiconductor electrode and solar cell using same
A ruthenium complex represented by the following formula: RuL 1 L 2 X wherein L 1 represents a 2,2′;6′,2″-terpyridine compound having at least one group selected from a carboxyl group, a...
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6624503 |
Electromagnetic filtering structure
A filter board for filtering electromagnetic emissions from an electronic device couples to a conductive housing in the device. The filter board includes a plurality of filter components connected...
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6614051 |
Device for monitoring substrate charging and method of fabricating same
A charge monitoring device comprising one or more capacitor-resistor pairs. The one or more capacitor-resistor pairs comprise a resistor and a capacitor connected in series. The capacitor comprises...
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6597049 |
Conductor structure for a magnetic memory
A conductor structure for a magnetic memory is disclosed. The conductor structure includes one or more conductors that have a width that is less than a dimension of a memory cell in a direction the...
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6590195 |
Solid-state image sensor with reduced smear and noise
A solid-state image sensor includes a semiconductor bulk region of a first conductivity type; at least a drain region of a second conductivity type selectively provided in the semiconductor bulk...
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6579740 |
Method of making a thin film sensor
In a thin-film infrared sensor, (100)-oriented semiconductor substrate is used for the sensor fabrication. A surface of the substrate is partially masked to provide an unmasked section where a...
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6566722 |
Photo sensor in a photo diode on a semiconductor wafer
A method of forming a photo sensor in a photo diode is provided. The photo diode is formed in a semiconductor wafer. The semiconductor wafer includes a substrate with a first conductive type, and...
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6534704 |
Solar cell
A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made...
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6525386 |
Non-protruding optoelectronic lens
An optoelectronic component has a lens that is formed in the surface of an encapsulant surrounding a semiconductor diode element. With respect to emitters, the lens reduces internal reflection and...
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6518597 |
IR sensor and method for fabricating the same
Infrared ray sensor and method for fabricating the same, the method including the steps of (a) forming a diaphragm on a substrate, (b) forming and patterning a semiconductor film on the diaphragm...
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6512809 |
Radiation detector for an X-ray computed tomography apparatus
A detector for a computed tomography apparatus has a number of photodiodes arranged in row form on a printed circuit board, wherein the photodiodes are in each case formed from a substrate and an...
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6504153 |
Semiconductor infrared detecting device
In a semiconductor infrared image pick-up system, thermo-sensing sections arrayed in a matrix format are supported by a supporting section above a base substrate in a floating state such that they...
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6501683 |
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device includes memory cell, charge buildup damage reducer and damage reducer controller. The memory cell includes floating and control gates formed over a...
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6495894 |
Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate
A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, c≧0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, z≧0) are formed in turn on a substrate. The...
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6441469 |
Semiconductor memory configuration with dummy components on continuous diffusion regions
The semiconductor memory configuration has at least two memory cell arrays. The open area between the strips of the sense-amp transistors in the two memory cell arrays contains dummy transistors....
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6373116 |
Two-dimensional image detector
In a two-dimensional image detector in accordance with the present invention, an active matrix substrate includes: a gate insulating film provided on gate electrodes and storage capacitance...
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6350989 |
Wafer-fused semiconductor radiation detector
Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive...
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6348356 |
Method and apparatus for determining the robustness of memory cells to alpha-particle/cosmic ray induced soft errors
Method for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes. In one embodiment, the method includes the steps of estimating energies of...
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6344679 |
Diode with alterable conductivity and method of making same
A semiconductor device ( 102 ) having a plurality of diodes ( 100 ) with alterable electrical conductivity by a source of energy ( 30 ), e.g., a laser, external to the semiconductor device. The...
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