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7602033 Low resistance tunneling magnetoresistive sensor with composite inner pinned layer  
A high performance TMR sensor is fabricated by employing a composite inner pinned (AP 1 ) layer in an AP 2 /Ru/AP 1 pinned layer configuration. In one embodiment, there is a 10 to 80 Angstrom...
7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element  
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy...
7598579 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current  
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10 6 A/cm 2 is disclosed. The MTJ has a Co 60 Fe 20 B 20 /MgO/Co 60 Fe 20 B 20 configuration where...
7595520 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same  
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
7582941 Magnetic memory device and method of fabricating the same  
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device...
7573112 Methods and apparatus for sensor having capacitor on chip  
A magnetic sensor comprises a plurality of layers including a substrate having circuitry, at least one conductive layer to interconnect the circuitry, and an insulator layer to electrically...
7569902 Enhanced toggle-MRAM memory device  
A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic...
7564110 Electrical lapping guides made from tunneling magnetoresistive (TMR) material  
Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A...
7528457 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R  
An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX...
7508042 Spin transfer MRAM device with magnetic biasing  
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in...
7495303 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements  
A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured...
7492022 Non-magnetic semiconductor spin transistor  
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the...
7476953 Integrated sensor having a magnetic flux concentrator  
An integrated sensor has a magnetic field sensing element and first and second relatively high magnetically permeable members forming a gap, wherein the magnetic field element is disposed within...
7476919 MRAM cell structure and method of fabrication  
An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching...
7468282 Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element  
A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic...
7420365 Single chip MR sensor integrated with an RF transceiver  
At least one magnetic field sensing device and an RF transceiver are integrated in a discrete, single-chip package. Rather than requiring at least two separate chips to wirelessly transmit the...
7391091 Magnetic particle flow detector  
A ferromagnetic thin-film based magnetic field detection system having a substrate supporting a magnetic field sensor in a channel with a first electrical conductor supported on the substrate...
7372119 Cross-shaped Hall device having extensions with slits  
A Hall device of the present invention includes a cross-shaped magnetometric sensing surface, a pair of power terminal portions and a pair of output terminal portions. The surface is formed of a...
7358599 Optical semiconductor device having a lead frame and electronic equipment using same  
An optical semiconductor device 1 a includes a lead frame 4 having an aperture 7 , a submount 8 disposed on one surface of the lead frame 4 to close the aperture 7 , a semiconductor...
7345477 Magnetic detection device including resistance adjusting unit  
In a magnetic detection device for obtaining an output from between a variable resistance element using the magnetoresistance effect and a reference resistance element, a balance between resistance...
7339245 Hall sensor  
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor...
7330371 Method and structure for generating offset fields for use in MRAM devices  
A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer...
7313013 Spin-current switchable magnetic memory element and method of fabricating the memory element  
A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at...
7312506 Memory cell structure  
A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located...
7309903 Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device  
A pin junction element ( 10 ) includes a ferromagnetic p-type semiconductor layer ( 11 ) and a n-type semiconductor layer ( 12 ) which are connected via an insulating layer ( 13 ), and which shows...
7307304 Ferroelectric materials and ferroelectric memory device made therefrom  
A ferroelectric material includes a compound of formula (I): (Pb 1−x−z Ba z A x )(B y Zr 1−y )O 3 , (I)
7285814 Dynamic random access memory circuitry and integrated circuitry  
A method of forming a conductive contact to a conductive structure includes forming a conductive structure received within and projecting outwardly from a first insulative material. A second...
7272033 Magnetic film structure using spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor device  
Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor...
7262449 MTJ element for magnetic random access memory  
A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape...
7259437 High performance spin-valve transistor  
The invention generally relates to the field of spintronics, a branch of electronics using the magnetic spin properties of electrons. More particularly, the invention relates to the field of...
7230343 High density memory array having increased channel widths  
A memory array having decreased cell sizes and having transistors with increased channel widths. More specifically, pillars are formed in a substrate such that sidewalls are exposed. The sidewalls...
7211199 Magnetically-and electrically-induced variable resistance materials and method for preparing same  
Provided are new compositions of ruthenates in the pervoskite and layered pervoskite family, wherein the ruthenate compositions exhibit large magnetoresistance (MR) and electric-pulse-induced...
7208808 Magnetic random access memory with lower switching field  
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel...
7205622 Vertical hall effect device  
A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more...
7199435 Semiconductor devices containing on-chip current sensor and methods for making such devices  
Semiconductor devices containing a MOSFET and an on-chip current sensor in the form of a magnetic resistive element are described. The magnetic resistive element (MRE) is proximate the MOSFET in...
7193288 Magnetoelectric transducer and its manufacturing method  
A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The...
7141859 Porous gas sensors and method of preparation thereof  
Devices including conductometric porous silicon gas sensors, methods of fabricating conductometric porous silicon gas sensors, methods of selecting a device, methods of detecting a concentration of...
7141843 Integratable polarization rotator  
Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the...
7133309 Method and structure for generating offset fields for use in MRAM devices  
A method for generating an offset field for a magnetic random access memory (MRAM) device includes forming a first pinned layer integrally with a wordline, and forming a second pinned layer...
7129534 Magneto-resistive memory and method of manufacturing the same  
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
7126181 Capacitor constructions  
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more...
7122852 Structure/method to fabricate a high performance magnetic tunneling junction MRAM  
An MTJ (magnetic tunneling junction) MRAM (magnetic random access memory) cell is formed on a conducting lead and magnetic keeper layer that is capped by a sputter-etched Ta layer. The Ta layer has...
7084467 Spin valve transistor with self-pinned antiparallel pinned layer structure  
A spin valve transistor includes an emitter, a collector, a base between the emitter and the collector, a spin valve which includes a free layer structure, a self-pinned antiparallel (AP) pinned...
7067349 Ion path polymers for ion-motion memory  
Methods and systems for improving at least one of carrier ion/charge mobility, distribution and permeability in a semiconducting polymer layer of a microelectronic device are disclosed. The methods...
7057249 Magnetic memory device  
A memory device includes a first surface having memory chips disposed thereon, the memory chips defining an exterior face of the memory device, and a second surface opposite the exterior face. A...
7053165 Semiconductor integrated circuit including an inductor and method of manufacturing the same  
A semiconductor integrated circuit device, and method of manufacturing the same, includes an inductor with improved inductance and an improved quality factor (Q-factor) that can be miniaturized. In...
7005715 Magnetic storage device and method of fabricating the same  
Problems in reliability and cross-talk of MRAM, which are intrinsically ascribable to the structure thereof, are solved at the same time. In a magnetic storage device ( 1 ) having write word lines...
7002229 Self aligned Hall with field plate  
A self aligned Hall sensor system and method are disclosed. A substrate can be provided. A Hall element and a plurality of contacts can then be formed upon the substrate wherein contacts are...
6960816 System and method for sensing a magnetic field  
A magnetic field sensor includes a transistor device having a base region, an emitter region, and a collector region. A barrier region disposed between the emitter region and the collector region...
6956269 Spin-polarization of carriers in semiconductor materials for spin-based microelectronic devices  
Spin-based microelectronic devices can be realized by utilizing spin-polarized ferromagnetic materials positioned near, or embedded in, a semiconductor channel of a microelectronic device. Applying...
Matches 1 - 50 out of 173 1 2 3 4 >