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7339245 Hall sensor  
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor...
7208808 Magnetic random access memory with lower switching field  
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel...
7205622 Vertical hall effect device  
A vertical Hall effect apparatus, including methods thereof. A substrate layer can be provided upon which an epitaxial layer is formed. The epitaxial layer is surrounded vertically by one or more...
7129534 Magneto-resistive memory and method of manufacturing the same  
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
7095070 Method for fabricating Bi thin film and device using the same  
In a method for fabricating a Bi thin film having a great MR (magnetoresistance) at room temperature and a method for fabricating a spintronics device using the same, the Bi thin film is fabricated...
7002229 Self aligned Hall with field plate  
A self aligned Hall sensor system and method are disclosed. A substrate can be provided. A Hall element and a plurality of contacts can then be formed upon the substrate wherein contacts are...
6927475 Power generator and method for forming same  
A power generator. The power generator includes a first substrate, a second substrate, a magnetic film, a first metal layer, a second metal layer and an electricity storage device. The second...
6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors  
The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor...
6903431 Substrate method and apparatus  
This invention relates to an apparatus and methods for reducing the impedance mismatch problem encountered by differential signaling in conductive core substrates, while maintaining adherence to...
6903429 Magnetic sensor integrated with CMOS  
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two...
6861717 Device for defecting a magnetic field, magnetic field measure and current meter  
A device for detecting a magnetic field, e.g., a magnetic field meter and an ammeter are described, the device having a first lateral magnetotransistor and a second lateral magnetotransistor, and...
6833599 Sensitivity enhancement of semiconductor magnetic sensor  
A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate....
6734514 Hall effect sensor  
A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer...
6727563 Offset-reduced hall element  
A Hall element comprises a region having a non-zero Hall constant, a first contact for supplying an operating current to the region, a third contact for conducting the operating current from the...
6693332 Current reference apparatus  
A current reference, which may be fabricated on a die, as part of an integrated circuit, or in various other forms, is disclosed. The current reference includes two current sources, both of which...
6646315 Conductive film layer for hall effect device  
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility...
6573713 Transpinnor-based switch and applications  
A transpinnor switch is described having a network of thin-film elements in a bridge configuration, selected ones of the thin-film elements exhibiting giant magnetoresistance. The switch also...
6509620 Flexure coupling block for motion sensor  
A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a...
6492697 Hall-effect element with integrated offset control and method for operating hall-effect element to reduce null offset  
A Hall-effect element includes an isolating layer and an active layer of a first electrical conductivity type disposed on the isolating layer, the active layer having a surface. A first set of...
6342713 Method of operating a magnetoelectronic device  
A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately...
6329696 Semiconductor device with electric converter element  
A semiconductor device with an electric converter element on a diaphragm is provided, in which the diaphragm has an improved thermal shielding or blocking capability from a semiconductor substrate...
6278271 Three dimensional magnetic field sensor  
A magnetic field sensor for measurement of the three components (B x , B y , B z ) of a magnetic field comprises a Hall-effect element (1) and an electronic circuit (22). The Hall-effect element...
6114719 Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell  
A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to...
6104075 Semiconductor temperature sensor  
A polysilicon gate layer, a first n + diffusion region serving as a drain region, and a second n + diffusion region serving as a source region form a MOSFET, and then an operating point of the...
6064083 Hybrid hall effect memory device and method of operation  
A hybrid memory device combines a ferromagnetic layer and a Hall Effect device. The ferromagnetic layer is magnetically coupled to a portion of a Hall plate, and when such plate is appropriately...
6031273 All-metal, giant magnetoresistive, solid-state component  
A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of...
5821596 Batch fabricated semiconductor micro-switch  
A micro-switch having a flexible conductive membrane which is moved by an external force, such as pressure from an air flow, to establish a connection between contact pads. The conductive membrane...
5757055 Triple drain magneto field effect transistor with high conductivity central drain  
A triple drain magnetic field effect transistor (MagFET) for measuring magnetic field. The disclosed MagFET has a gate, a source, a center drain and two lateral drains and generates an increased...
5654566 Magnetic spin injected field effect transistor and method of operation  
A new hybrid magnetic spin injected-FET structure can be used as a memory element for the nonvolatile storage of digital information, as well as in other environments, including for example logic...
5652445 Hybrid hall effect device and method of operation  
A modified Hall Effect device can be used as a memory element for the nonvolatile storage of digital information. The novel device includes a ferromagnetic layer that covers a portion of a Hall...
5583367 Monolithic integrated sensor circuit in CMOS technology  
The invention relates to a monolithic integrated sensor circuit, fabricated in CMOS technology, in which the circuit implemented on the semiconductor chip is connected to the ground connection via...
5572058 Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer  
A vertical Hall element is formed within the epitaxial layer of a semiconductor and isolated from other components by a P type isolation diffusion. A position defining diffusion is used to...
5530345 An integrated halleffect apparatus for detecting the position of a magnetic element  
For detecting the position of a magnetic element having a field component zeroing in at least one point in space, typically in a plane, a plurality of elementary Hall-effect sensors are integrated...
5528067 Magnetic field detection  
A solid state triode employs the Hall effect to asymmetrically proportion flow of current through different branches of a number of cascaded bifurcated N- charge carrier channels (10,18,20),...
5514899 Dual-emitter lateral magnetometer  
A magnetometer or magnetic field sensor includes semiconductor material deposited laterally on an insulating substrate. The semiconductor material is alternating regions of n- and p-type silicon...
5502325 Integrated magnetoresistive sensor  
A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the...
5446307 Microelectronic 3D bipolar magnetotransistor magnetometer  
A pyramid shaped etch is made in an n or p type silicon substrate, or any symmetric etch with slanted edges, with p or n type implants in the slanted edges of the etch to form a PN junction. On...
5442221 Hall effect sensor  
A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of...
4995261 Field-based movement sensing apparatus  
A transducer for measuring strain in an object on which the transducer is placed includes a flexible, generally planar frame member for placement on the object. The frame member, in turn, includes...
4982254 Differentially magnetically sensitive diode structure  
A three terminal differentially sensitive magnetic diode structure is described. It offers high magnetic sensitivity and utilizes the Lorentz field potential modulation of injected carriers at the...
4829352 Integrable Hall element  
An inventive Hall element formed from semiconductor material is disclosed. The inventive Hall element comprises a plurality of interconnected portions formed in a common semiconductor layer....
4673964 Buried Hall element  
A Hall element incorporated inside a semiconductor body has a P-N junction barrier which surrounds the active zone of the Hall element in all directions. The output of the Hall element is connected...
4660065 Hall effect device with surface potential shielding layer  
A semiconductor Hall effect device having a stable and more controllable offset voltage is formed, in one embodiment, of an N-type silicon epitaxial layer overlying a P-type silicon substrate, and...
4516144 Columnated and trimmed magnetically sensitive semiconductor  
A Hall effect semiconductor device is provided with means for clipping or focusing emitted carriers to form a centralized columnated beam, and trimming means for accurately controlling the amount...
4315273 Compound semiconductor Hall effect element  
A hall effect element of the type having a semi-insulating substrate of a single crystal of a compound semiconductor such as GaAs and an either n-type or p-type conducting layer which is formed on...
4276555 Controlled avalanche voltage transistor and magnetic sensor  
A heretofore undiscovered suddenly conducting avalanche voltage effect is described with relationship to a new family of hybrid transistors. The devices constructed also exhibit magnetic...
4141026 Hall effect generator  
A semiconductor body has formed on it at least two hall effect plates each having a pair of oppositely positioned current contacts and a pair of oppositely positioned hall voltage contacts, the...
4123772 Multisegment Hall element for offset voltage compensation  
A semiconductor device having a Hall element in which, in order to reduce the offset, the Hall element consists of an even number of sub-Hall elements provided in one semiconductor body and the...
4028718 Semiconductor Hall element  
A semiconductor Hall element consists of a substantially rectangular main island and at least one small island of semiconductor material, one conductivity type disposed in an epitaxial...
4025941 Hall element  
A Hall element comprises a thin plate of n-type Si, the face of which accords with a {110} atomic plane, wherein the direction from one current electrode to the other current electrode is...
Matches 1 - 50 out of 70 1 2 >