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7545013 |
Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics
A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of...
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7521264 |
Spin injection control using electric current
Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region...
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7476953 |
Integrated sensor having a magnetic flux concentrator
An integrated sensor has a magnetic field sensing element and first and second relatively high magnetically permeable members forming a gap, wherein the magnetic field element is disposed within...
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7468282 |
Tunneling magnetoresistive element, semiconductor junction element, magnetic memory and semiconductor light emitting element
A pin junction element includes a ferromagnetic p-type semiconductor layer and a n-type semiconductor layer which are connected via an insulating layer, and which shows a tunneling magnetic...
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7388268 |
Compound semiconductor multilayer structure, hall device, and hall device manufacturing method
Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least...
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7349247 |
Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage
A magnetic switching element includes: a ferromagnetic layer which is substantially pinned in magnetization in one direction; and a magnetic semiconductor layer provided within a range where a...
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7339245 |
Hall sensor
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor...
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7309903 |
Tunneling magnetoresistance device semiconductor junction device magnetic memory and semiconductor light-emitting device
A pin junction element ( 10 ) includes a ferromagnetic p-type semiconductor layer ( 11 ) and a n-type semiconductor layer ( 12 ) which are connected via an insulating layer ( 13 ), and which shows...
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7262449 |
MTJ element for magnetic random access memory
A magnetic random access memory according to an aspect of the present invention comprises a first magnetic layer in which a magnetization state is fixed, a second magnetic layer which has a shape...
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7244997 |
Magneto-luminescent transducer
An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from...
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7239000 |
Semiconductor device and magneto-resistive sensor integration
A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric...
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7208808 |
Magnetic random access memory with lower switching field
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel...
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7193288 |
Magnetoelectric transducer and its manufacturing method
A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The...
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7173275 |
Thin-film transistors based on tunneling structures and applications
A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the...
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7170173 |
Magnetically lined conductors
A conductor with improved magnetic field per current ratio is disclosed. The conductor includes a magnetic liner lining a second surface and sides thereof. The corners of the conductor where the...
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7164181 |
Spin injection devices
Devices such as transistors, amplifiers, frequency multipliers, and square-law detectors use injection of spin-polarized electrons from one magnetic region, into another through a control region...
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7164180 |
Magnetoresistive random-access memory device
Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified...
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7141843 |
Integratable polarization rotator
Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the...
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7129534 |
Magneto-resistive memory and method of manufacturing the same
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
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7053165 |
Semiconductor integrated circuit including an inductor and method of manufacturing the same
A semiconductor integrated circuit device, and method of manufacturing the same, includes an inductor with improved inductance and an improved quality factor (Q-factor) that can be miniaturized. In...
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7019371 |
Current-in-plane magnetic sensor including a trilayer structure
A current-in-plane magnetic sensor comprises a sensor stack including first and second layers of ferromagnetic material, a first nano-oxide layer positioned adjacent to the first layer of...
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6921953 |
Self-aligned, low-resistance, efficient MRAM read/write conductors
The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor...
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6903429 |
Magnetic sensor integrated with CMOS
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two...
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6879012 |
Giant planar hall effect in epitaxial ferromagnetic semiconductor devices
Ferromagnetic semiconductor-based compositions, systems and methods that enable studies of the dynamics and magnetoresistance of individual magnetic domain walls, and which provide enhanced...
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6878979 |
Spin switch and magnetic storage element using it
A spin switch that can be driven with voltage. This spin switch includes the following: a ferromagnetic material; a magnetic semiconductor magnetically coupled to the ferromagnetic material; an...
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6867468 |
Magnetic shielding for reducing magnetic interference
A magnetic memory array comprises a plurality of magnetic memory cells, a magnetic shielding disposed adjacent to at least one of the magnetic memory cells to reduce magnetic interference with...
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6861718 |
Spin valve transistor, magnetic reproducing head and magnetic information storage system
A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a...
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6833599 |
Sensitivity enhancement of semiconductor magnetic sensor
A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate....
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6787868 |
Microlenses for integrated optical devices
The invention provides integrated optical matching elements for use in integrated optical devices. The matching elements each comprise one or more lenses. The lenses may have low index contrast...
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6756649 |
High speed electron tunneling device and applications
A modulator includes a voltage source, a first arrangement including first and second non-insulating layers configured such that a modulation voltage from the voltage source can be applied there...
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6734514 |
Hall effect sensor
A metrological Hall effect sensor with sensitivity to temperature less than 250 ppm/° C. and with high Hall effect coefficient for temperatures greater than 200° C. formed in a multilayer...
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6683359 |
Hall effect device with multiple layers
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high...
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6646315 |
Conductive film layer for hall effect device
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility...
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6630882 |
Composite magnetic sensor
Composite galvanomagnetic devices having a desired combination of properties in specific temperature ranges and magnetic field ranges and so combined that desired properties are provided over an...
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6621100 |
Polymer-, organic-, and molecular-based spintronic devices
This invention relates to organic based spintronic devices, and electronic devices comprising them, including spin valves, spin tunnel junctions, spin transistors and spin light-emitting devices....
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6600202 |
Compact sensing apparatus having reduced cross section and methods of mounting same
A compact sensing apparatus having reduced cross section and methods are provided for sensing the magnitude and direction of an electrical or magnetic field. The compact sensing apparatus and...
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6542068 |
Vertical hall effect sensor and a brushless electric motor having a vertical hall effect sensor
A vertical Hall sensor includes a semiconductor crystal with three or more arm sections that are arranged at a uniform angle distance to each other. A central electrode and external current...
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6512369 |
Temperature compensated voltage divider with a magnetoresistor and a reference resistor
A magnetoresistor voltage divider includes a bottom layer disposed on a substrate. A middle layer is disposed on the bottom layer. A top layer is disposed on the middle layer. The bottom and top...
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6509620 |
Flexure coupling block for motion sensor
A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a...
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6504197 |
Magnetic memory element and magnetic memory using the same
A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an...
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6445024 |
Ramp-edge structured tunneling devices using ferromagnet electrodes
The fabrication of ferromagnet-insulator-ferromagnet magnetic tunneling junction devices using a ramp-edge geometry based on, e.g., (La 0.7 Sr 0.3 ) MnO 3 , ferromagnetic electrodes and a SrTiO 3 ...
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6429498 |
Sensor for measuring a magnetic field
The invention relates to a sensor for measuring a magnetic field. The inventive sensor has a high level of measuring sensitivity compared to a Hall probe, comprising several electrically...
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6426539 |
Bolometric detector with intermediate electrical insulation and manufacturing process for this detector
Bolometric detector with intermediate electrical insulation and manufacturing process for this detector. According to the invention, at least two electrodes are formed facing the same face of a...
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6396114 |
Magneto-electric device
A hall device portion 15 is formed in the right side of a silicon substrate 11. A first magnetic film 23 is formed on the surface of an etched groove 19 formed in the reverse side of the...
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6307241 |
Integrable ferromagnets for high density storage
Submicron ferromagnets, of selected size and spacing, are introduced into semiconductor by means of ion implantation and subsequent heat treatments. The resulting semiconductor contains...
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6114719 |
Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to...
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5939764 |
Direct current voltage transformer
The DC transformer includes structure having a high mobility, two-dimensional electron gas contained within a plane therein. A magnetic field is maintained normal to the electron gas plane and the...
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5831513 |
Magnetic field sensing device
A magnetic field sensing device for simultaneously measuring all components of a magnetic field is disclosed. The present invention includes a conductive stack formed in a semiconductor substrate,...
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5808349 |
Magnetized photoconductive semiconductor switch
A strong magnetic field is applied to a photoconductive semiconductor switch to make the opening time of the switch independent of the recombination time of the photoionized semiconductor. As a...
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5543988 |
Hall sensor with high spatial resolution in two directions concurrently
A magnetic sensor, memory, and magnetic imager has been described for sensing a magnetic field in two directions concurrently incorporating a bar of semiconductor material having a rectangular...
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