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5502325 |
Integrated magnetoresistive sensor
A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the...
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5442221 |
Hall effect sensor
A Hall effect sensor of two-dimensional electron gas type comprising, on an insulating substrate, a quantum well structure, a carrier injection layer adjacent to the quantum well structure, of...
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5416353 |
Netoresistance effect element
A magnetoresistance effect element is prepared by successively forming one upon the other a first magnetic layer, a P- or N-type semiconductor layer, a second magnetic layer, and a magnetization...
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5371388 |
Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor
An electron wave interference device includes a source electrode for injecting electrons therethrough, a drain electrode for taking out electrons therethrough, channel means for propagating...
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5332911 |
Semiconductor component with adiabatic transport in edge channels
A semiconductor radiation detector with layer-wise construction and a contive region having a two-dimensional or quasi one-dimensional electron or hole gas is provided in which adiabatic transport...
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5324977 |
Hybrid ferromagnetic integrated circuit device
A hybrid integrated circuit device has a magnetic sensor formed directly on a substrate by photolithography. Alternatively, a flip chip type magnetic sensor is mounted on a substrate by fusion. The...
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5323050 |
Collector arrangement for magnetotransistor
A collector arrangement for a magnetotransistor (10, 25, 30) and a method for making the magnetotransistor (10, 25, 30). A portion of a semiconductor substrate (11) is doped to form a base region...
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5229621 |
Magnetic semiconductor element and a magneto-optical read out head
A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is...
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5198879 |
Heterojunction semiconductor device
A heterojunction semiconductor device utilizing a quantum-mechanical effect comprises a first compound semiconductor (e.g., AlGaAs) layer and a second compound semiconductor (e.g., GaAs) layer...
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5191223 |
Device for selective magnetization and method
A method and device are disclosed for converting electronic signals into magnetic signals in DMS materials by generating carriers in selected regions of the materials. The carriers comprise either...
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5173758 |
Hall generator with four arms
A Hall generator includes a substrate body of single crystalline semi-insulating gallium arsenide having a surface. A thin layer, no greater than about 5 micrometers in thickness, of single...
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5041891 |
Hall IC formed in GaAs substrate
A Hall element and an amplifier for amplifying an output generated from the Hall element are formed in a GaAs substrate. The Hall element has a current path extending at an angle of 45°±10° to a...
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4978938 |
Magnetoresistor
A magnetoresistive sensor that includes a very thin film of monocrystalline semiconductive material, having at least a moderate carrier mobility and no greater than a moderate carrier density. The...
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4926226 |
Magnetic field sensors
A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by...
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4912451 |
Heterojunction magnetic field sensor
The heterojunction magnetic field sensor is basically a heterojunction structure forming a two-dimensional electron gas layer having a high carrier mobility at the junction portion of at least two...
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4908685 |
Magnetoelectric transducer
A magnetoelectric transducer comprising a group III-V compound semiconductor thin film 14 of 0.1 μm to 10 μm thickness formed as a magnetic field sensing portion on a substrate 12 overlaying an...
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4905318 |
Semiconductor hall element with magnetic powder in resin
A highly magnetic Hall element comprising a substrate, a Hall element chip mounted on the substrate, and a magnetic member interposed between the substrate and the chip. The magnetic member...
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4698522 |
Structure for Hall device for compensation of first and second order voltage offsets
A Hall device is formed from a generally rectangular body of material exhibiting the Hall effect, with two excitation electrodes disposed along opposite edges of the device. Two Hall output voltage...
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4587509 |
Hall effect device with overlapping flux concentrators
A Hall effect device for responding to weak magnetic fields uses a small chip of gallium arsenide located between the overlapped ends of two flux concentrators. The spacing between the...
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4568905 |
Magnetoelectric transducer
A magnetoelectric transducer having a substrate of magnetic or non-magnetic material is improved by providing a thin film of crystalline semiconductor In 1 -x Ga x Sb (0<x≤0.2) on the...
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4450460 |
Magnetic-infrared-emitting diode
A plate of a semiconductor having a narrow energy gap such as InSb, is applied with a magnetic field in parallel therewith and further supplied with a current in parallel therewith also as well as...
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4401966 |
Magnetoelectric transducer and fabrication method therefor
A mold-packaged magnetoelectric transducer element such as a Hall element or a magnetoresistance element comprises a magnetosensitive thin layer, electrodes formed on the thin layer for lead-out...
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4398342 |
Method of making a Hall effect device
A Hall effect device comprises a thin substrate free epitaxially grown semiconductor body mounted in a magnetically permeable, e.g. ferrite, housing. The layer, which is preferably gallium arsenide...
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4315273 |
Compound semiconductor Hall effect element
A hall effect element of the type having a semi-insulating substrate of a single crystal of a compound semiconductor such as GaAs and an either n-type or p-type conducting layer which is formed on...
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4236165 |
Planar semiconductor device
Planar semiconductor device including a crystalline layer of Ga x Al 1 -x Sb compound semiconductor (0.1<x<0.3) grown on a GaSB substrate and a narrow energy band gap semiconductor grown as...
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4224594 |
Deep diode magnetoresistor
A semiconductor magnetoresistor device embodies a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by thermal gradient zone melting to maximize the increase in...
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4223292 |
Hall element
A basically cross-shaped semiconductor Hall element comprises a pair of current-supplying electrodes as well as a pair of Hall electrodes. The structure includes trapezoidal semiconductor regions...
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4217547 |
Method for determining the compensation density in n-type narrow-gap semiconductors
A method for determining the compensation density of narrow-gap semiconductors. Photo-excited carriers are generated by uniformily irradiating a sample with a laser pulse of a particular density...
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4168991 |
Method for making a deep diode magnetoresistor
Thermal gradient zone melting (TGZM) is employed to make a semiconductor magnetoresistor device embodying a plurality of spaced highly conductive planar metallic-like electrodes formed in situ by...
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4028718 |
Semiconductor Hall element
A semiconductor Hall element consists of a substantially rectangular main island and at least one small island of semiconductor material, one conductivity type disposed in an epitaxial...
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3972035 |
Detection of magnetic domains by tunnel junctions
Tunnel junctions are used to detect magnetic domains, such as bubble domains, using the change in Fermi level of one (or both) electrodes due to the magnetic field of the domain. The Fermi level...
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3895391 |
Magnetosensitive thin film semiconductor element and a process for manufacturing same
A magnetosensitive thin film semiconductor element having the structure in which said element is comprised of a substrate of a material exhibiting a high magnetic permeability, the surface of which...
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3849875 |
HALL EFFECT MAGNETOMETER
A magnetometer utilizing a single crystal of Bi 2 Se 3 having a rhombohedral crystal structure is described along with a method for making such a device. The Bi 2 Se 3 has a positive or...
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3850685 |
THIN LAYER SEMICONDUCTOR DEVICE
A thin layer semiconductor device comprising a mixed crystal, InSb (1 -x ) As x composed of indium, In, antimony, Sb, and arsenic, As, in a compounding ratio in which x satisfies the following...
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3840728 |
MAGNETO-REACTANCE DEVICE
A magneto-reactance element comprising a semiconductor, a pair of current terminals at opposite ends thereof, and at least one reactive component at angles to the current path of the...
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3818328 |
FERROMAGNETIC HETEROJUNCTION DIODE
A magnetically controllable electronic diode formed of a pair of electrodes spaced apart from one another by a layer of a ferromagnetic semiconductor material in contact with one of the electrodes...
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3789311 |
HALL EFFECT DEVICE
A Hall effect device provided with input terminal sections at both ends and output terminal sections, which are projected, at both sides of the center wherein at least one through hole is provided...
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3691502 |
SEMICONDUCTOR TYPE POTENTIOMETER DEVICE
Various improvements of a semiconductor type potentiometer device comprising one or more three electrode semiconductor elements each having two end electrodes and an intermediate electrode provided...
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3624553 |
CYCLOTRON RESONATOR LASER IN A P-TYPE SEMICONDUCTOR
There is disclosed a cyclotron resonance laser of the type in which the Landau-level ladder is truncated either by the optical phonon or unequal spacings of the levels, in which the semiconductive...
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3617975 |
TWO-LAYER MAGNETORESISTORS
Thin film and bulk magnetoresistors having sensitivity improved by a factor greater than two by coating the magnetoresistor element with a thin conductive layer which short circuits the Hall effect...
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3579820 |
METHOD OF MAKING GALVANOMAGNETIC RESISTOR UTILIZING GRID FOR SHORT-CIRCUITING HALL VOLTAGE
A metal grid is placed on the surface of a semiconductor layer for short-circuiting Hall voltage in the semiconductor layer. The semiconductor layer is placed on a carrier plate with the grid...
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3567946 |
RADIATION DETECTOR HAVING SEMICONDUCTOR BODY EXHIBITING A PHOTOTHERMOMAGNETIC EFFECT
A layer of SiO x is provided on a surface of a semiconductor body of indium antimonide to which radiation is directed. x is equal to or less than 2 and equal to or greater than 1. The indium...
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3525023 |
MULTILAYER THIN FILM MAGNETIC MEMORY ELEMENT
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3490070 |
GALVANOMAGNETIC RESISTOR UTILIZING GRID FOR SHORT-CIRCUITING HALL VOLTAGE
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3425945 |
NOVEL ZINC MANGANESE ARSENIDE SEMICONDUCTING MATERIALS
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3410721 |
GALVANO-MAGNETIC RESISTOR WITH SEMICONDUCTOR TOP LAYER
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3409847 |
Solid state plasma structures
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3341358 |
Fabrication of magnetoresistive semiconductor film devices
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3339129 |
Hall effect apparatus
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3327247 |
Nonreciprocal solid state waveguide and devices utilizing same
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