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7605391 |
Optically coupled resonator
An optically coupled resonator includes a resonator body having at least one resonator sidewall and a laterally offset photodiode formed in a semiconductor substrate adjacent to the resonator body....
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7477884 |
Tri-state RF switch
A tri-state RF MEMS switch includes: a first well formed in a first substrate; a first input signal line and a first output signal line forming a first gap therebetween in the first well; a post...
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7375406 |
Thermoplastic overmolding for small package turbocharger speed sensor
A sensor package apparatus includes a lead frame substrate that supports one or more electrical components, which are connected to and located on the lead frame substrate. A plurality of wire bonds...
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7355261 |
Thin film device, thin film device module, and method of forming thin film device module
A thin film device includes a thin film element disposed on a surface of a substrate for high voltage formed of a material having an electric resistivity in the range of 10 8 Ω·cm to 10 10 ...
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7339245 |
Hall sensor
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor...
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7339214 |
Methods and apparatus for inducing stress in a semiconductor device
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An...
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7309888 |
Spin based electronic device
A thin film sensing device operates based on a spin polarized current. The spin device includes ferromagnetic layers characterized by different coercivities and/or magnetization states, and one or...
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7253490 |
Magnetic sensor having vertical hall device and method for manufacturing the same
A vertical Hall device includes: a substrate; a semiconductor region having a first conductive type and disposed in the substrate; and a magnetic field detection portion disposed in the...
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7239000 |
Semiconductor device and magneto-resistive sensor integration
A magnetic-sensing apparatus and method of making and using thereof is provided. The sensing apparatus may be fabricated from semiconductor circuitry and a magneto-resistive sensor. A dielectric...
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7208808 |
Magnetic random access memory with lower switching field
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel...
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7129534 |
Magneto-resistive memory and method of manufacturing the same
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
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6921953 |
Self-aligned, low-resistance, efficient MRAM read/write conductors
The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor...
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6903429 |
Magnetic sensor integrated with CMOS
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two...
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6861718 |
Spin valve transistor, magnetic reproducing head and magnetic information storage system
A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a...
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6833599 |
Sensitivity enhancement of semiconductor magnetic sensor
A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate....
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6815784 |
Magneto-resistive random access memory
A magneto-resistive random access memory includes a MOS transistor having a first gate and source and drain junctions on a substrate, a lower electrode connected to the source junction, a first...
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6803638 |
Semiconductor hall sensor
A semiconductor Hall sensor can reduce measuring error due to an unbalanced voltage by decreasing the unbalanced voltage, and improve resistance to electrostatic by suppressing maximum electric...
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6744086 |
Current switched magnetoresistive memory cell
A ferromagnetic thin-film based digital memory cell with a memory film of an anisotropic ferromagnetic material and with a source layer positioned on one side thereof so that a majority of...
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6727537 |
Magnetic memory cell
A magnetic memory device based on easy domain wall propagation and the extraordinary Hall effect includes a perpendicular-to-plane a magnetic electrically conductive element ( 2 ) that includes a...
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6683359 |
Hall effect device with multiple layers
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high...
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6646315 |
Conductive film layer for hall effect device
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility...
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6509620 |
Flexure coupling block for motion sensor
A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a...
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6388299 |
Sensor assembly and method
A sensor device that provides a relatively uniform electric field between a diaphragm and a substrate, regardless of the displacement of the diaphragm is disclosed. The sensor device provides a...
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6211559 |
Symmetric magnetic tunnel device
A symmetric magnetic tunnel device including first and second magnetic tunnel junctions each including a pinned magnetic layer, an insulating tunnel layer and a free magnetic layer stacked in...
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6114719 |
Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell
A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to...
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5874749 |
Polarized optical emission due to decay or recombination of spin-polarized injected carriers
A device for producing circularly polarized optical emission includes a light emitting semiconductor heterostructure, further including at least one semiconducting layer; a ferromagnetic contact...
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5763928 |
Hall effect modulation of resistor values
A semiconductor structure is disclosed in which two regions of semiconductor material positioned adjacent to each other have different electron mobilities. By application of a magnetic field to the...
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5631488 |
Semiconductor integrated circuit device
There is disclosed a semiconductor integrated circuit device in which a semiconductor integrated circuit substrate provided with an electromagnetic coil from which lead wires are drawn out is...
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5173758 |
Hall generator with four arms
A Hall generator includes a substrate body of single crystalline semi-insulating gallium arsenide having a surface. A thin layer, no greater than about 5 micrometers in thickness, of single...
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4929993 |
Hall element device with depletion region protection barrier
An integrated circuit Hall element is disclosed. At least two current connection contacts and two sensor connection contacts are formed on the surface of the semiconductor body incorporating the...
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4926226 |
Magnetic field sensors
A magnetodiode for use in a magnetic sensor using a semiconductive element (advantageously of a direct band-gap, high mobility material such as gallium arsenide) that has a superlattice formed by...
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4843444 |
Magnetic field sensor
A magnetic sensor is formed by a diode that includes a silicon element whose bulk is of high resistivity and low recombination velocity material and which includes spaced apart on its top surface...
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4823177 |
Method and device for magnetizing thin films by the use of injected spin polarized current
A device and method for magnetizing a material having a magnetic constituent. In a preferred embodiment, a ferromagnetic film and a first film are selectively deposited at first and second...
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4017884 |
Magnetic field sensitive diode and method of making same
A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed...
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3758871 |
ARRANGEMENTS FOR CONTROLLING THE OUTPUT OF AMPLIFIERS
An arrangement for controlling the output of an amplifier in which an element determining the output value or gain factor comprises a semiconductor element with magnetic field dependent resistance...
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3731123 |
MAGNETIC FIELD DETECTING APPARATUS
A magnetic field detecting apparatus comprises a semiconductor substrate, preferably of a substantially intrinsic material, having at least first, second and third spaced apart regions of...
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3657576 |
CONTACTLESS SWITCH USING MAGNETIC DIODES
A contactless switch comprises a controllable active switching element connected through a threshold responsive circuit element to a voltage divide including two series connected magnetic field...
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3549967 |
BRUSHLESS MOTOR UTILIZING MAGNETORESISTANCE MEANS HAVING RECOMBINATION REGIONS
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3519899 |
MAGNETO-RESISTANCE ELEMENT
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3512017 |
SUPERCONDUCTIVE SEMICONDUCTOR DEVICES
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3202912 |
Method of utilizing tunnel diodes to detect changes in magnetic fields
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2980860 |
Hall effect device
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3747201 |
Title is not available
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3584377 |
Title is not available
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