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7595520 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same  
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
7569903 Component arrangement having a transistor and an open-load detector  
One embodiment of the invention relates to a component arrangement including a load and an open-load detector. The load transistor has a first transistor region arranged in a semiconductor body, a...
7531883 Magneto-resistance transistor and method thereof  
A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between...
7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization  
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer...
7492022 Non-magnetic semiconductor spin transistor  
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the...
7476953 Integrated sensor having a magnetic flux concentrator  
An integrated sensor has a magnetic field sensing element and first and second relatively high magnetically permeable members forming a gap, wherein the magnetic field element is disposed within...
7453084 Spin transistor with ultra-low energy base-collector barrier  
A transistor has an emitter, a spin-selective base, a collector, a first barrier interposed between the spin-selective base and the emitter, a second barrier interposed between the spin-selective...
7420228 Bipolar transistor comprising carbon-doped semiconductor  
A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further...
7367111 Method for producing a spin valve transistor with stabilization  
A method and structure for a spin valve transistor (SVT) comprises a magnetic field sensor, an insulating layer adjacent the magnetic field sensor, a bias layer adjacent the insulating layer, a...
7339245 Hall sensor  
A Hall sensor on a semiconductor substrate includes a Hall plate in the semiconductor substrate, where the Hall plate includes a first zone having a first conduction type. The semiconductor...
7315071 Magnetic RAM  
A memory element for a magnetic RAM, contained in a recess of an insulating layer, the recess including a portion with slanted sides extending down to the bottom of the recess, the memory element...
7242042 Solid state image sensing device and manufacturing and driving methods thereof  
A solid state image sensing device is composed of a second conductive type well area 33 , a photoelectric conversion area 40 , a ring shaped gate electrode 35 , a transfer gate electrode 41 , a...
7235851 Spin transistor and method thereof  
A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base...
7230805 Semiconductor slider with an integral spin valve transistor structure and method for making same without a bonding step  
A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage...
7230306 Microelectromechanical thin-film device  
Processing and systems to create, and resulting products related to, very small-dimension singular, or monolithically arrayed, semiconductor mechanical devices. Processing is laser performed on...
7217975 Lateral type semiconductor device  
A lateral semiconductor device includes: a semiconductor substrate formed on a base region therein; a plurality of emitter regions with a triangle arrangement in an upper part of the base layer and...
7208808 Magnetic random access memory with lower switching field  
A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel...
7202544 Giant magnetoresistance structure  
The present invention relates to a method for producing a GMR structure in which a metallic multiple layer is applied onto a carrier and in which the metallic multiple layer is patterned to produce...
7193288 Magnetoelectric transducer and its manufacturing method  
A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The...
7173320 High performance lateral bipolar transistor  
A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is connected to the gate for applying a bias...
7141859 Porous gas sensors and method of preparation thereof  
Devices including conductometric porous silicon gas sensors, methods of fabricating conductometric porous silicon gas sensors, methods of selecting a device, methods of detecting a concentration of...
7141843 Integratable polarization rotator  
Embodiments of the invention provide a polarization rotator. The polarization rotator may be integrated with a waveguide on a substrate, and may include a ferromagnetic semiconductor layer on the...
7129534 Magneto-resistive memory and method of manufacturing the same  
A method of forming a magneto-resistive memory element includes forming a groove in a layer of insulating material. A liner is formed conformably within the groove and the groove is filled with...
6960816 System and method for sensing a magnetic field  
A magnetic field sensor includes a transistor device having a base region, an emitter region, and a collector region. A barrier region disposed between the emitter region and the collector region...
6930370 Memory with conductors between or in communication with storage units  
A memory includes an array of magnetic memory cells, each magnetic memory cell being adapted to store a bit of information, interconnects in communication with the magnetic memory cells, and...
6921953 Self-aligned, low-resistance, efficient MRAM read/write conductors  
The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor...
6919608 Spin transistor  
A spin transistor ( 10 ) comprises a spin injector ( 50 ) formed of a ferromagnetic material and constituting the emitter ( 20 ) of a three-terminal device, a spin filter ( 70 ) also formed of a...
6911663 Transmission circuit and semiconductor device  
There is provided a transmission circuit which can certainly perform transmission of data of digital form between two circuits operating in synchronization with two clock signals having the same...
6903429 Magnetic sensor integrated with CMOS  
A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two...
6890770 Magnetoresistive random access memory device structures and methods for fabricating the same  
A method for fabricating an MRAM device structure includes providing a substrate on which is formed a first transistor and a second transistor. An operative memory element device is formed in...
6861718 Spin valve transistor, magnetic reproducing head and magnetic information storage system  
A spin valve transistor, magnetic reproducing head including a spin valve transistor and a magnetic information storage system having the spin valve transistor. The spin valve transistor has a...
6833599 Sensitivity enhancement of semiconductor magnetic sensor  
A semiconductor magnetic sensor includes a semiconductor substrate, a source, a drain, a gate, and a carrier condensing means. The source and the drain are located in a surface of the substrate....
6798041 Method and system for providing a power lateral PNP transistor using a buried power buss  
A power lateral PNP device is disclosed which includes an epitaxial layer; a first and second collector region embedded in the epitaxial layer, an emitter region between the first and second...
6777766 Device for sensing a magnetic field, magnetic field meter and an ammeter  
Proposed are a device, a magnetic-field sensor and a current sensor, the device having the feature that provision is made for a first magnetic-field sensing means, for a second magnetic-field...
6753592 Multi-technology complementary bipolar output using polysilicon emitter and buried power buss with low temperature processing  
A dual polysilicon emitter, complementary output is provided which utilizes a buried power buss. While providing these advantages, the process is not complicated. The process has the speed...
6724059 Magnetoelectric transducer and method for producing the same  
The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test...
6696737 Unipolar spin transistor and the applications of the same  
The unipolar spin transistor includes a first semiconductor region having a conductivity type and a first spin polarization, and a second semiconductor region having a conductivity type that is the...
6683359 Hall effect device with multiple layers  
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface: and (b) a ferromagnetic multilayer, where the conductive film or layer is composed of high...
6653704 Magnetic memory with tunnel junction memory cells and phase transition material for controlling current to the cells  
A magnetic random access memory (MRAM) array includes a plurality of magnetic tunnel junction (MTJ) memory cells and a plurality of non-electronic switching elements, each MTJ memory cell and an...
6646315 Conductive film layer for hall effect device  
A Hall effect device comprising: (a) an electrically-conductive layer or plate having a top surface; and (b) a ferromagnetic layer, where the conductive film or layer is composed of high mobility...
6509620 Flexure coupling block for motion sensor  
A microelectromechanical system (MEMS) device is disclosed for determining the position of a mover. The MEMS device has a bottom layer connected to a mover layer. The mover layer is connected to a...
6504197 Magnetic memory element and magnetic memory using the same  
A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an...
6501109 Active CMOS pixel with exponential output based on the GIDL mechanism  
A structure of a new active pixel sensor cell formed in a semiconductor substrate is disclosed. An n-type region is formed in the substrate extending to the surface. Two p+ regions are formed in...
6208012 Zener zap diode and method of manufacturing the same  
The invention provides a zener zap diode having a high reliability and a method of manufacturing the same that can remove the problems accompanied with the zener zap trimming. In order to attain...
6114719 Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell  
A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to...
5962905 Magnetoresistive element  
A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an...
5821596 Batch fabricated semiconductor micro-switch  
A micro-switch having a flexible conductive membrane which is moved by an external force, such as pressure from an air flow, to establish a connection between contact pads. The conductive membrane...
5679973 Lateral hall element  
A lateral Hall element includes a substrate, a first-conductivity type active layer formed on the substrate, a first second-conductivity type semiconductor layer formed to surround the...
5572058 Hall effect device formed in an epitaxial layer of silicon for sensing magnetic fields parallel to the epitaxial layer  
A vertical Hall element is formed within the epitaxial layer of a semiconductor and isolated from other components by a P type isolation diffusion. A position defining diffusion is used to...
5514899 Dual-emitter lateral magnetometer  
A magnetometer or magnetic field sensor includes semiconductor material deposited laterally on an insulating substrate. The semiconductor material is alternating regions of n- and p-type silicon...
Matches 1 - 50 out of 98 1 2 >