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7615836 Magnetic self-assembly for integrated circuit packages  
An integrated circuit package may include a substrate and an integrated circuit. The substrate may include at least one region, and a first magnetic material associated with the at least one...
7612424 Nanoelectromechanical bistable cantilever device  
Nano-electromechanical device having an electrically conductive nano-cantilever wherein the nano-cantilever has a free end that is movable relative to an electrically conductive substrate such as...
7608901 Spin transistor using stray magnetic field  
Disclosed herein is a spin transistor including: a semiconductor substrate having a channel layer formed therein; first and second electrodes which are formed to be spaced apart from each other on...
7606063 Magnetic memory device  
A magnetic memory device includes a substrate, a magnetic tunneling junction (MTJ) structure disposed on the substrate, and a capping layer disposed on the MTJ structure. By adding a capping layer...
7605437 Spin-transfer MRAM structure and methods  
A spin-transfer MRAM bit includes a free magnet layer positioned between a pair of spin polarizers, wherein at least one of the spin polarizers comprises an unpinned synthetic antiferromagnet...
7602032 Memory having cap structure for magnetoresistive junction and method for structuring the same  
A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed...
7602000 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element  
A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy...
7598579 Magnetic tunnel junction (MTJ) to reduce spin transfer magnetization switching current  
A MTJ that minimizes spin-transfer magnetization switching current (Jc) in a Spin-RAM to <1×10 6 A/cm 2 is disclosed. The MTJ has a Co 60 Fe 20 B 20 /MgO/Co 60 Fe 20 B 20 configuration where...
7598578 Magnetic element and signal processing device  
A magnetic element includes a channel layer, a first magnetic electrode which is in contact with the channel layer, a second magnetic electrode which is in contact with the channel layer and is...
7598577 Magnetic memory device  
A magnetic memory device comprises magneto-resistance elements each including a cylindrical fixed magnetization layer, an insulating film which covers an external surface of the fixed magnetization...
7595520 Capping layer for a magnetic tunnel junction device to enhance dR/R and a method of making the same  
An MTJ in an MRAM array or TMR read head is disclosed in which a low magnetization capping layer is a composite having a NiFeHf inner layer formed on a NiFe or CoFeB/NiFe free layer, a Ta middle...
7582942 Planar flux concentrator for MRAM devices  
The present invention provides an MRAM that includes a conductive line for generating a magnetic field. The latter is enhanced by the addition of a flux concentrator made from a single plane of...
7582941 Magnetic memory device and method of fabricating the same  
A magnetic memory device includes a common line; a first write-in diode, a readout diode and a second write-in diode being connected to the common line in parallel. The magnetic memory device...
7582892 Optically controlled switching methods based upon the polarization of electromagnetic radiation incident upon carbon nanotubes and electrical-switch systems using such switch devices  
Described herein is an optically controlled electrical-switch device which includes a first current-conduction terminal and a second current-conduction terminal, and a carbon nanotube connected...
7579196 Interconnect connecting a diffusion metal layer and a power plane metal and fabricating method thereof  
A giant magnetoresistance (GMR) pad on the same level of GMR memory bit layer is used as an intermediate connection for plugs between the GMR pad and an underlying diffusion metal layer. A single...
7569902 Enhanced toggle-MRAM memory device  
A toggle-MRAM device is disclosed that uses an SAF composite and lowers the operating field substantially with a wide operating field margin and high thermal stability using specific magnetic...
7569877 System and method based on field-effect transistors for addressing nanometer-scale devices  
A system and method for selecting nanometer-scaled devices. The method includes a plurality of semiconductor wires. Two adjacent semiconductor wires of the plurality of semiconductor wires are...
7566941 Magnetoresistive memory cell and process for producing the same  
A magnetoresistive memory cell includes a tunnel barrier region between first and second electrode devices. The first electrode device includes a natural antiferromagnet region. A diffusion barrier...
7564110 Electrical lapping guides made from tunneling magnetoresistive (TMR) material  
Tunneling magnetoresistive (TMR) electrical lapping guides (ELG) are disclosed for use in wafer fabrication of magnetic sensing devices, such as magnetic recording heads using TMR read elements. A...
7564109 MRAM and method of manufacturing the same  
A magnetic memory device includes a first write wiring line including a wiring layer formed in a trench in an insulation layer, a barrier metal layer buried in the trench over the wiring layer. And...
7554837 Magnetic memory device  
A width and a thickness of a bit line are represented as W 1 and T 1 , respectively, a thickness of a digit line is represented as T 2 , and a distance from a center of the digit line in a...
7554145 Magnetic memory cells and manufacturing methods  
An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced...
7545672 Spin injection write type magnetic memory device  
A spin injection write type magnetic memory device includes memory cells which have a magnetoresistance effect element and a select transistor. The magnetoresistance effect element has one end...
7545013 Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics  
A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of...
7539051 Memory storage devices comprising different ferromagnetic material layers, and methods of making and using the same  
A memory storage device that contains alternating first and second ferromagnetic material layers is provided. Each first ferromagnetic material layer has a first layer thickness (L 1 ) and a first...
7538402 Magnetoresistive device and magnetic memory using the same  
A magnetic film stack is composed of a synthetic antiferromagnet including a plurality of ferromagnetic layers, adjacent two of which are antiferromagnetically coupled through a non-magnetic layer;...
7535070 Spin-wave architectures  
Nano-scale and multi-scale computational architectures using spin waves as a physical mechanism for device interconnection are provided. Solid-state spin-wave computing devices using nano-scale and...
7535069 Magnetic tunnel junction with enhanced magnetic switching characteristics  
A semiconductor device formed between a wordline and a bitline comprises a growth layer, an antiferromagnetic layer formed on the growth layer, a pinned layer formed on the antiferromagnetic layer,...
7531883 Magneto-resistance transistor and method thereof  
A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between...
7531882 Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization  
A method and system for providing a magnetic element that can be used in a magnetic memory is disclosed. The magnetic element includes pinned, nonmagnetic spacer, and free layers. The spacer layer...
7528457 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R  
An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX...
7528456 Nano-scale computational architectures with spin wave bus  
New kinds of nano-scale computational architectures using spin waves as a physical mechanism for device interconnection are described. A method for operating a logic device having a spin wave bus...
7527983 Ferromagnetic material  
A method is provided for producing a doped dilute ferromagnetic semiconductor material, by doping Zinc Oxide in bulk form with manganese to a maximum level of 5 atomic percent concentration. The...
7525166 Memory element and memory  
A memory element is provided. The memory element includes a memory layer that retains information based on a magnetization state of a magnetic material, in which a magnetization pinned layer is...
7521743 Nonvolatile magnetic memory device and photomask  
Disclosed is a nonvolatile magnetic memory device including a magntoresistance device having a recording layer formed of a ferromagnetic material for storing information by use of variation in...
7511351 Semiconductor device and method for fabricating the same  
In a semiconductor device having a WCSP type construction package, to increase inductance without increasing further an area conventionally occupied by a coil. A pseudo-post part 27 comprising a...
7510883 Magnetic tunnel junction temperature sensors and methods  
Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction (“MTJ”)...
7508700 Method of magnetic tunneling junction pattern layout for magnetic random access memory  
An MTJ pattern layout for a memory device is disclosed that includes two CMP assist features outside active MTJ device blocks. A first plurality of dummy MTJ devices is located in two dummy bands...
7508042 Spin transfer MRAM device with magnetic biasing  
The addition of segmented write word lines to a spin-transfer MRAM structure serves to magnetically bias the free layer so that the precessional motion of the magnetization vector that is set in...
7505308 Systems involving spin-transfer magnetic random access memory  
An exemplary magnetic random access memory system comprising, a spin-current generating portion including, a ferromagnetic film layer, and a conductance layer, a first write portion in electrical...
7504898 High-frequency oscillator with a stacked film including a magnetization pinned layer  
A high-frequency oscillator includes a high-frequency oscillation element having a magnetization pinned layer whose magnetization direction is pinned substantially in one direction, an oscillation...
7501688 Spin injection magnetization reversal element  
A spin injection magnetization reversal element includes a ferromagnetic fixed layer, an isolation layer and a ferromagnetic free layer. The area of contact between the ferromagnetic fixed layer...
7495303 Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements  
A method and system include providing a single pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured...
7492022 Non-magnetic semiconductor spin transistor  
A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the...
7485937 Tunnel junction device  
A tunnel junction device capable of controlling its spin retention is provided. The tunnel junction device includes a La 0.6 Sr 0.4 MnO 3-δ electrode ( 12 ), a La 0.6 Sr 0.4 Mn 1-y Ru y O 3-δ ...
7476954 TMR device with Hf based seed layer  
A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may...
7476953 Integrated sensor having a magnetic flux concentrator  
An integrated sensor has a magnetic field sensing element and first and second relatively high magnetically permeable members forming a gap, wherein the magnetic field element is disposed within...
7476919 MRAM cell structure and method of fabrication  
An MRAM structure is disclosed where the distance from a bit line or word line to an underlying free layer in an MTJ is small and well controlled. As a result, the bit line or word line switching...
7476413 Low magnetization materials for high performance magnetic memory devices  
Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device comprising one or more free magnetic layers is provided. The one or more free...
7471492 Magnetoresistive element, magnetic head and magnetic recording/reproducing apparatus  
A magnetoresistive element has a first magnetic layer and a second magnetic layer separate from each other, the first magnetic layer and the second magnetic layer each having a magnetization whose...
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