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Match Document Document Title
8980679 Apparatus and methods for forming phase change layer and method of manufacturing phase change memory device  
Provided are apparatus and methods for forming phase change layers, and methods of manufacturing a phase change memory device. A source material is supplied to a reaction chamber, and purges from...
RE45356 Phase-change memory device using Sb-Se metal alloy and method of fabricating the same  
Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory...
8933430 Variable resistance memory device and method of manufacturing the same  
A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of...
8927329 Method for manufacturing oxide semiconductor device with improved electronic properties  
The amount of water and hydrogen contained in an oxide semiconductor film is reduced, and oxygen is supplied sufficiently from a base film to the oxide semiconductor film in order to reduce oxygen...
8927957 Sidewall diode driving device and memory using same  
A memory device includes a first conductor, a diode, a memory element, and a second conductor arranged in series. The diode includes a first semiconductor layer over and in electrical...
8916847 Variable resistance memory device and method for fabricating the same  
A variable resistance memory device includes a plurality of first conductive lines extended in a first direction, a plurality of second conductive lines arranged over or under the first conductive...
8916414 Method for making memory cell by melting phase change material in confined space  
To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole....
8847192 Resistive switching devices having alloyed electrodes and methods of formation thereof  
In accordance with an embodiment of the present invention, a resistive switching device comprises a bottom electrode, a switching layer disposed over the bottom electrode, and a top electrode...
8847386 Electrical contact for a cadmium tellurium component  
An electrical contact for a detector, the electrical component, comprising a cadmium tellurium component, a first layer formed onto the cadmium tellurium component, wherein the first layer...
8841646 Semiconductor storage device and method for manufacturing same  
Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word...
8828774 Method for a single precursor ionic exchange to prepare semiconductor nanocrystal n-type thermoelectric material  
Herein disclosed is a method of forming a thermoelectric material having an optimized stoichiometry, the method comprising: reacting a precursor material including a population of nanocrystals...
8809829 Phase change memory having stabilized microstructure and manufacturing method  
A memory device having a phase change material element with a modified stoichiometry in the active region does not exhibit drift in set state resistance. A method for manufacturing the memory...
8803141 Hydrazine-free solution deposition of chalcogenide films  
A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
8785230 Localized surface plasmon resonance sensor using chalcogenide materials and method for manufacturing the same  
A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material...
8772077 Method of forming chalcogenide thin film  
The present invention concerns a method of forming a chalcogenide thin film for a phase-change memory. In the method of forming a chalcogenide thin film according to the present invention, a...
8729543 Multi-nary group IB and VIA based semiconductor  
Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor...
8685291 Variable resistance materials with superior data retention characteristics  
Variable resistance memory compositions and devices exhibiting superior data retention characteristics at elevated temperature. The compositions are composite materials that include a variable...
8674334 Memory elements using self-aligned phase change material layers and methods of manufacturing same  
A memory element and method of forming the same. The memory element includes a substrate supporting a first electrode, a dielectric layer over the first electrode having a via exposing a portion...
8673401 Gallium ink and methods of making and using same  
A method for depositing gallium using a gallium ink, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; is...
8653515 Thin film transistor and thin film transistor array panel  
Provided is a thin film transistor and thin film transistor panel array. The thin film transistor includes: a substrate; a gate electrode disposed on the substrate; a semiconductor layer disposed...
8653616 Photoelectric conversion device  
It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A...
8624236 Phase change memory cell having vertical channel access transistor  
A device includes a substrate having a first region and a second region. The first region comprises a first field effect transistor having a horizontal channel region within the substrate, a gate...
8624219 Variable impedance memory element structures, methods of manufacture, and memory devices containing the same  
A memory device can include at least one cathode formed in first opening of a first insulating layer; at least one anode formed in a second opening of second insulating layer, the second...
8614135 Methods of manufacturing phase change memory devices  
A phase change memory is manufactured by providing a substrate including a layer of phase-change material, forming a damascene pattern on the layer of phase-change material, and forming both a top...
8598576 Magnetic random access memory with field compensating layer and multi-level cell  
A spin toque transfer magnetic random access memory (STTMRAM) element comprises a reference layer, formed on a substrate, with a fixed perpendicular magnetic component. A junction layer is formed...
8563844 Thin-film heterostructure thermoelectrics in a group IIA and IV-VI materials system  
Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI...
8563088 Selenium/group 1B ink and methods of making and using same  
A method for preparing a Group 1a-1b-3a-6a material using a selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component...
8563961 Semiconductor storage device and method for manufacturing same  
Disclosed are a semiconductor storage device and a method for manufacturing the semiconductor storage device, whereby the bit cost of memory using a variable resistance material is reduced. The...
8531867 Conductive filament based memory elements and methods with improved data retention and/or endurance  
A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the...
8513050 Bi-Se doped with Cu, p-type semiconductor  
A Bi—Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred...
8466534 Radiation detector, and a radiographic apparatus having the same  
The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate...
8440991 Phase change memory device having a heater with a temperature dependent resistivity, method of manufacturing the same, and circuit of the same  
A phase change memory device having a heater that exhibits a temperature dependent resistivity which provides a way of reducing a reset current is presented. The phase change memory device...
8415197 Phase change memory device having an improved word line resistance, and methods of making same  
A phase change memory device having an improved word line resistance and a fabrication method of making the same are presented. The phase change memory device includes a semiconductor substrate, a...
8415662 Radiation detector having a plurality of amorphous selenium layers  
An X-ray detector 1 includes: an X-ray conversion layer 17 which is made of amorphous selenium and absorbs incident radiation and generates charges; a common electrode 23 provided on a surface on...
8372687 System, method and apparatus for forming multiple layers in a single process chamber  
A method for forming multiple layers in a single process chamber includes placing a substrate in the process chamber having multiple processing sources and iteratively forming a copper indium...
8372485 Gallium ink and methods of making and using same  
A gallium ink is provided, comprising, as initial components: a gallium component comprising gallium; a stabilizing component; an additive; and, a liquid carrier; wherein the gallium ink is a...
8361823 Light-emitting nanocomposite particles  
A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle...
8349646 Semiconductor wafer for semiconductor components and production method  
A semiconductor wafer for semiconductor components and to a method for its production is disclosed. In one embodiment, the semiconductor wafer includes a front side with an adjoining near-surface...
8344349 Electronic component, and a method of manufacturing an electronic component  
Provided is an electronic component that includes a first bi-layer stack including a first silicon oxide layer and a first silicon nitride layer, a second bi-layer stack including a second silicon...
8329480 Test pattern for detecting piping in a memory array  
A method of detecting manufacturing defects at a memory array may include disposing an active area of a first width in communication with a first conductive member of the memory array to define a...
8319204 Semiconductor device  
A recording layer 52 made of a chalcogenide material which stores a high-resistance state of a high electrical resistance value and a low-resistance state of a low electrical resistance value is...
8318531 Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates  
thermal management for large scale processing of CIS and/or CIGS based thin film is described. The method includes providing a plurality of substrates, each of the substrates having a copper and...
8309179 Selenium/group 1b ink and methods of making and using same  
A selenium/Group 1b ink comprising, as initial components: a selenium component comprising selenium, an organic chalcogenide component having a formula selected from RZ—Z′R′ and R2—SH, a Group 1b...
8282995 Selenium/group 1b/group 3a ink and methods of making and using same  
A selenium/Group Ib/Group 3a ink is provided, comprising, as initial components: (a) a selenium/Group Ib/Group 3a system which comprises a combination of, as initial components: a selenium; an...
8277894 Selenium ink and methods of making and using same  
A selenium ink comprising selenium stably dispersed in a liquid medium is provided, wherein the selenium ink is hydrazine free and hydrazinium free. Also provided are methods of preparing the...
8247795 Interfused nanocrystals and method of preparing the same  
Interfused nanocrystals including two or more materials, further including an alloy layer formed of the two or more materials. In addition, a method of preparing the interfused nanocrystals. In...
8231848 One-pot synthesis of chalcopyrite-based semi-conductor nanoparticles  
Ternary and quaternary Chalcopyrite CuInxGa1-xSySe2-y (CIGS, where 0≦x and y≦1) nanoparticles were synthesized from molecular single source precursors (SSPs) by a one-pot reaction in a high...
8211757 Organic thin film transistor substrate and fabrication method therefor  
An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including...
8211742 Lateral phase change memory  
A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first...
8169053 Resistive random access memories and methods of manufacturing the same  
Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to...

Matches 1 - 50 out of 231 1 2 3 4 5 >