Patents in Class 257/42

Matches 1 - 50 out of 182

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Match	Document	Document Title
1	8169053	Resistive random access memories and methods of manufacturing the same Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to...
2	8153471	Method for forming a reduced active area in a phase change memory structure A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region...
3	8148710	Phase-change memory device using a variable resistance structure A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second...
4	8148709	Magnetic device with integrated magneto-resistive stack This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic...
5	8148707	Ovonic threshold switch film composition for TSLAGS material A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the...
6	8143619	Methods of combinatorial processing for screening multiple samples on a semiconductor substrate In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of...
7	8134150	Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
8	8134139	Programmable metallization cell with ion buffer layer A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
9	8124968	Non-volatile memory device Provided are a non-volatile memory device which can be extended in a stack structure and thus can be highly integrated, and a method of manufacturing the non-volatile memory device. The...
10	8124955	Memory devices and methods of forming the same Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of...
11	8110828	Real time process monitoring and control for semiconductor junctions A method of manufacturing a semiconductor layer is provided. In a first deposition during a first period of time, at least one Group IIIA element and at least one Group VIA element are deposited on...
12	8106394	Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a...
13	8097871	Low operational current phase change memory structures Memory cells described herein have an increased current density at lateral edges of the active region compared to that of conventional mushroom-type memory cells, resulting in improved operational...
14	8093576	Chemical-mechanical polish termination layer to build electrical device isolation A method of forming a semiconductor device may comprise forming a memory portion, forming a carbon film, depositing insulation to at least partially cover the carbon film, and terminating patterned...
15	8067766	Multi-level memory cell A multi-level memory cell having a bottom electrode, a first dielectric layer, a plurality of memory material layers, a plurality of second dielectric layers, and an upper electrode is provided....
16	8053772	Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
17	8013318	Phase change random access memory for actively removing residual heat and method of manufacturing the same A phase change random access memory for actively removing residual heat and a method of manufacturing the same are presented. The phase change random access memory includes a semiconductor...
18	7999255	Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
19	7977674	Phase change memory device and method of fabricating the same A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium...
20	7968876	Phase change memory cell having vertical channel access transistor Memory devices are described along with methods for manufacturing. A device as described herein includes a substrate having a first region and a second region. The first region comprises a first...
21	7968862	Phase change memory elements using self-aligned phase change material layers A phase change memory element and method of forming the same. The memory element includes a substrate supporting a first electrode. An insulating material element is positioned over the first...
22	7960726	Hydrazine-free solution deposition of chalcogenide films A method of depositing a film of a metal chalcogenide including the steps of: contacting an isolated hydrazinium-based precursor of a metal chalcogenide and a solvent having therein a solubilizing...
23	7939816	Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor...
24	7927911	Wafer bonded access device for multi-layer phase change memory using lock-and-key alignment A method for fabricating a multi-layer phase change memory device includes forming a phase change memory layer including a plurality of phase change memory elements on a word line formed on a...
25	7888166	Method to form high efficiency GST cell using a double heater cut Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a...
26	7858980	Reduced active area in a phase change memory structure A phase change memory structure and method for forming the same, the method including providing a substrate comprising a conductive area; forming a spacer having a partially exposed sidewall region...
27	7851791	Thin film transistor having N-type and P-type CIS thin films and method of manufacturing the same Provided is a thin film transistor (TFT) which uses CIS (CuInSe2), including Se, which is a chalcogen-based material, and can provide a rectifying function, and electric and optical switching...
28	7834337	Memory device A phase-change memory device including a memory cell having a memory element and a select transistor is improved in heat resistance so that it may be operable at 145° C. or higher. The memory ...
29	7825405	Devices comprising coated semiconductor nanocrystals heterostructures A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be...
30	7816660	Lateral phase change memory A lateral phase change memory includes a pair of electrodes separated by an insulating layer. The first electrode is formed in an opening in an insulating layer and is cup-shaped. The first...
31	7804086	Phase change memory device having decreased contact resistance of heater and method for manufacturing the same A phase change memory device includes a silicon substrate having cell and peripheral regions. A first insulation layer with a plurality of holes is formed in the cell region. Recessed cell...
32	7803669	Organic thin-film transistor substrate and fabrication method therefor An organic thin film transistor substrate includes a gate line formed on a substrate, a data line intersecting the gate line and defining a subpixel area, an organic thin film transistor including...
33	7803657	Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing...
34	7791060	Semiconductor memory device and method of controlling the same A semiconductor memory device comprising: first and second wirings arranged in a matrix; and a memory cell being provided at an intersecting point of the first and second wirings and including a...
35	7772583	Memory devices and methods of forming the same Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of...
36	7768031	Light emitting device and method of producing a light emitting device To provide a DC drive type inorganic light emitting device excellent in luminous efficiency, provided is a light emitting device, including: a substrate; and a first layer and a second layer...
37	7763886	Doped phase change material and pram including the same Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization...
38	7741636	Programmable resistive RAM and manufacturing method Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid...
39	7718988	Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same Provided are a multi-bit memory device having resistive material layers as a storage node, and methods of manufacturing and operating the same. The memory device includes a substrate, a transistor...
40	7709835	Method to form high efficiency GST cell using a double heater cut Embodiments of the present invention provide a method that includes providing wafer including multiple cells, each cell including at least one emitter. The method further includes performing a...
41	7696509	Solid state electrolyte memory device and method of fabricating the same A method of fabricating a solid state electrolytes memory device is provided. An insulator layer is formed on a substrate. A conductive layer is formed on the insulator layer. At least two openings...
42	7687779	Electro-medical imaging apparatus having chalcogen-thin film transistor array Provided is an electro-medical imaging apparatus manufactured using a thin film transistor (TFT) array including chalcogen-based semiconductor elements that can generate and store an electric...
43	7678605	Method for chemical mechanical planarization of chalcogenide materials A method and associated composition for chemical mechanical planarization of a chalcogenide-containing substrate (e.g., germanium/antimony/tellurium (GST)-containing substrate) are described. The...
44	7671360	Semiconductor device and method of producing the same A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater...
45	7670887	Field-effect transistors with weakly coupled layered inorganic semiconductors A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic...
46	7642549	Phase change memory cells delineated by regions of modified film resistivity A Phase Change Memory (PCM) cell structure comprises both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM layer is protected from damage by...
47	7633079	Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a...
48	7589342	Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same Disclosed is a phase change memory device including: a semiconductor substrate formed with a first insulating interlayer having a first contact hole; a contact plug formed in such a manner so as to...
49	7563639	Phase-changeable memory device and method of manufacturing the same In a semiconductor memory device and a method of manufacturing the same, an insulating layer is formed on a substrate having a logic region on which a first pad is provided and a cell region on...
50	7547913	Phase-change memory device using Sb-Se metal alloy and method of fabricating the same Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory...

Matches 1 - 50 out of 182

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