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7642611 |
Sensor device, sensor system and methods for manufacturing them
A sensor system includes a sensor device ( 10 ) and an integrated circuit ( 20 ) for driving the device ( 10 ). The device ( 10 ) includes a sensor body ( 1 ) of a silicon-based material, an upper...
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7642576 |
Rotational MEMS device having piezo-resistor sensor
A rotational micro-electromechanical system (MEMS) having a piezo-resistor sensor is provided. The rotational MEMS device includes a pair of torsion springs that support a stage, four resistors, at...
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7627943 |
Method of manufacturing a pressure sensor
A method of manufacturing a pressure sensor is provided whereby the pressure sensor includes a joint, a diaphragm, and an adapter disposed between the joint and the diaphragm. The adapter includes...
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7626237 |
Non-volatile MEMS memory cell and method of forming such memory cell
A memory cell for storing a bit having one of two logic states. The memory cell includes a structure comprises a pair of electrically conductive shape memory alloy members separated by a...
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7615834 |
Capacitive micromachined ultrasonic transducer(CMUT) with varying thickness membrane
Structure for capacitive micromachined ultrasonic transducer (CMUT) device or other vibrating membrane device having non-uniform membrane so that membrane mass and stiffness characteristics may be...
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7608900 |
Semiconductor device and method of manufacturing and inspection thereof
An accelerator sensor includes a semiconductor substrate having a main front surface and a main rear surface, a first groove portion being formed along a front surface pattern, in the main front...
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7579662 |
MEMS resonator and method of enhancing an output signal current from a MEMS resonator
The resonator comprises two capacitively coupled electrodes. One of the electrodes is made of a p-type doped semiconductor material, whereas the other electrode is made of an n-type doped...
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7540191 |
Angular rate sensor and method of manufacturing the same
An angular rate sensor 100 comprises a first structure 110 which includes a fixed portion 111 having an opening 114, a displacing portion 112 placed in the opening 114, and a connecting...
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7521276 |
Compliant terminal mountings with vented spaces and methods
A method of making chip assemblies includes providing an in-process assembly including a semiconductor wafer, a wafer compliant structure overlying a front surface of the wafer and cavities, and...
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7471548 |
Structure of static random access memory with stress engineering for stability
An integrated circuit (IC) is provided that includes at least one static random access memory (SRAM) cell wherein performance of the SRAM cell is enhanced, yet with good stability and writability....
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7462522 |
Method and structure for improving device performance variation in dual stress liner technology
A method for making a semiconductor structure that overcome the dual stress liner boundary problem, without significantly increasing the overall size of the integrated circuit, is provided. In...
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7436037 |
Moisture resistant pressure sensors
A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements...
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7432542 |
Semiconductor device with electrostrictive layer in semiconductor layer and method of manufacturing the same
A semiconductor device includes a first semiconductor layer, and a first insulated-gate field-effect transistor of a first conductivity type that is provided in a major surface region of the first...
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7427797 |
Semiconductor device having actuator
A semiconductor device having a surface MEMS element, includes a semiconductor substrate, and an actuator which is arranged above the semiconductor substrate via a space and has a lower electrode,...
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7425749 |
MEMS pixel sensor
A MEMS pixel sensor is provided with a thin-film mechanical device having a mechanical body, with a mechanical state responsive to a proximate environment. A thin-film electronic device converts...
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7388267 |
Selective stress engineering for SRAM stability improvement
An integrated circuit (IC) structure including a SRAM cell is provided in which the performance of the pass-gate transistors is degraded in order to increase the beta ratio of the transistors...
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7372115 |
Thermally isolated membrane structure
An MEMS device including a semiconductor substrate having an upper and lower surface, and a support structure disposed at least partially in the semiconductor substrate. The support structure...
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7354787 |
Electrode design and positioning for controlled movement of a moveable electrode and associated support structure
A MEMS system including a fixed electrode and a suspended moveable electrode that is controllable over a wide range of motion. In traditional systems where an fixed electrode is positioned under...
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7355268 |
High reflector tunable stress coating, such as for a MEMS mirror
An optical device having a high reflector tunable stress coating includes a micro-electromechanical system (MEMS) platform, a mirror disposed on the MEMS platform, and a multiple layer coating...
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7339214 |
Methods and apparatus for inducing stress in a semiconductor device
Methods and apparatus are disclosed for selectively inducing stress in a semiconductor device, wherein a first region of a substrate is implanted so as to induce stress in a second region. An...
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7326974 |
Sensor for measuring a gas concentration or ion concentration
A field-effect transistor used as a sensor for measuring a gas or ion concentration utilizes a surface structure such as rings along with surface profiling, for example elevations of the rings and...
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7312485 |
CMOS fabrication process utilizing special transistor orientation
Complementary metal oxide semiconductor transistors are formed on a silicon substrate. The substrate has a {100} crystallographic orientation. The transistors are formed on the substrate so that...
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7309902 |
Microelectronic device with anti-stiction coating
One embodiment of a microelectronic device includes a movable plate including a lower surface, a bump positioned on the lower surface, and an anti-stiction coating positioned only on the bump.
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7304358 |
MOS transistor with a deformable gate
A MOS transistor with a deformable gate formed in a semiconductor substrate, including source and drain areas separated by a channel area extending in a first direction from the source to the drain...
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7300815 |
Method for fabricating a gold contact on a microswitch
Described is a process to pattern adhesion and top contact layers in such a way that at least some portion of the top contact layers overlaps the adhesion layer, while another portion of the top...
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7279760 |
Nanotube relay device
The present invention relates to a nanotube device ( 100, 600 ), comprising a nanotube with a longitudinal and a lateral extension, a structure for supporting at least a first part of the nanotube,...
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7270868 |
Micromechanical component
A component having a surface micromechanical structure containing both movable elements and immovable elements, and a method of manufacturing same are described. The surface micromechanical...
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7253488 |
Piezo-TFT cantilever MEMS
A piezo-TFT cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method comprises: providing a substrate, such as glass for example; forming...
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7183620 |
Moisture resistant differential pressure sensors
A differential pressure sensor has a semiconductor wafer having a top and bottom surface. The top surface of the wafer has a central active area containing piezoresistive elements. These elements...
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7176540 |
Method for producing micromechanical structures and a micromechanical structure
A method for producing micromechanical structures, in which a functional layer is deposited onto a sacrificial layer, and the sacrificial layer is removed again for the production of at least one...
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7138693 |
Barrier layers for microelectromechanical systems
A method for processing microelectromechanical devices is disclosed herein. The method prevents the diffusion and interaction between sacrificial layers and structure layers of the...
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7135749 |
Pressure sensor
A pressure sensor includes a silicon-on-insulator (SOI) substrate, a glass substrate bonded to the SOI substrate by anode bonding, a silicon island formed on a part of a silicon layer of the SOI...
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7122396 |
Semiconductor acceleration sensor and process for manufacturing the same
The present invention provides a semiconductor acceleration sensor wherein a semiconductor element is prevented from being damaged even when at least part of a weight is disposed in an internal...
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7109561 |
Method of manufacturing a semiconductor device and a method for fixing the semiconductor device using substrate jig
The present invention relates to a method of manufacturing a semiconductor substrate including the back grind step, the dicing step, the pick up step, and the die bonding step of the wafer; and to...
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7084517 |
Semiconductor device connecting structure, liquid crystal display unit based on the same connecting structure, and electronic apparatus using the same display unit
A semiconductor device connecting structure is provided for connecting a semiconductor IC to a substrate. A bonding layer is placed between the substrate and the semiconductor IC to accomplish...
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7075162 |
Electrostatic/electrostrictive actuation of elastomer structures using compliant electrodes
A valve structure includes an elastomeric block formed with first and second microfabricated recesses separated by a membrane portion of the elastomeric block. The valve is actuated by positioning...
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7056759 |
Method for making a microelectromechanical system using a flexure protection layer
A microelectromechanical system is made by establishing a flexure protection layer over a portion of at least one flexure which is located on a substrate. The flexure protection layer is deposited...
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7057247 |
Combined absolute differential transducer
There is disclosed a combined absolute differential pressure transducer which consists of two sensors made from the same wafer silicon and selected to be adjacent to each other on the wafer. Since...
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7038285 |
Very high sensitivity magnetic sensor
A magnetic sensor includes a thin deformable membrane made of a conductive material forming a first plate of a capacitor which conducts an electric current therethrough. A second capacitor plate of...
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7034370 |
MEMS scanning mirror with tunable natural frequency
In one embodiment of the invention, a MEMS structure includes a first electrode, a second electrode, and a mobile element. The first electrode is coupled to a first voltage source. The second...
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7002439 |
Switchable capacitor and method of making the same
A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive...
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6967362 |
Flexible MEMS transducer and manufacturing method thereof, and flexible MEMS wireless microphone
A flexible wireless MEMS microphone includes a substrate of a flexible polymeric material, a flexible MEMS transducer structure formed on the substrate by PECVD, an antenna printed on the substrate...
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6960814 |
Reflecting device and method of fabricating the same
Reflecting layers in first, second and third regions are separated from a reflecting layer in the surrounding region by a separating groove. The first region is folded in a valley shape from a...
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6952042 |
Microelectromechanical device with integrated conductive shield
A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate...
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6943391 |
Modification of carrier mobility in a semiconductor device
Tensile or compressive stress may be added in one or more selected locations to the biaxial residual stress existing in the channel of a semiconductor device, such as a MOSFET. The periphery of the...
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6936902 |
Sensor with at least one micromechanical structure and method for production thereof
A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that...
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6930368 |
MEMS having a three-wafer structure
A microelectromechanical system includes a first wafer, a second wafer including a moveable portion, and a third wafer. The movable portion is movable between the first wafer and the third wafer....
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6849912 |
Vertical transistor comprising a mobile gate and a method for the production thereof
What is proposed is a vertical field effect transistor produced from a semiconductor wafer, comprising a residual transistor composed of a source zone, a channel zone and a drain zone, as well as a...
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6847090 |
Silicon capacitive microphone
The present invention is directed to a process for the manufacture of a plurality of integrated capacitive transducers. The process comprises the steps of supplying a first substrate of a...
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6841838 |
Microelectromechanical tunneling gyroscope and an assembly for making a microelectromechanical tunneling gyroscope therefrom
A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and...
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