Patents in Class 257/411

Matches 1 - 50 out of 591

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Match	Document	Document Title
1	7615830	Transistors with multilayered dielectric films Transistors that include multilayered dielectric films on a channel region are provided. The multilayered dielectric comprises a lower dielectric film that may have a thickness that is at least 50%...
2	7612403	Low power non-volatile memory and gate stack Non-volatile memory devices and arrays are described that facilitate the use of band-gap engineered gate stacks with asymmetric tunnel barriers in reverse and normal mode floating node memory cells...
3	7608899	Semiconductor device Diffusion layers 2 - 5 are formed on a silicon substrate 1 , and gate dielectric films 6, 7 and gate lectrodes 8, 9 are formed on these diffusion layers 2 - 5 so as to be MOS transistors....
4	7605436	Manufacture of semiconductor device having insulation film of high dielectric constant A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a...
5	7605422	Semiconductor device A semiconductor device capable of realizing low-voltage drivability and large storage capacity (miniaturization) by achieving large threshold voltage shifts and long retention time while at the...
6	7602030	Hafnium tantalum oxide dielectrics A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments...
7	7602003	Semiconductor device structure for reducing hot carrier effect of MOS transistor A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The...
8	7598576	Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation,...
9	7595538	Semiconductor device A P-type MOSFET 120 includes a semiconductor substrate (N-well 102 b ); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which...
10	7592678	CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof CMOS devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. A CMOS device is formed on a workpiece having a first region and a second...
11	7592674	Semiconductor device with silicide-containing gate electrode and method of fabricating the same There is provided a semiconductor device which is capable of solving a problem of threshold control in CMOS transistor, accompanied with combination of a gate insulating film having a high...
12	7586159	Semiconductor devices having different gate dielectrics and methods for manufacturing the same A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate...
13	7585698	Thin film transistor having oxide semiconductor layer and manufacturing method thereof A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on...
14	7579661	Semiconductor device, electronic device and electronic apparatus An semiconductor device ( 1 ) of the invention includes a semiconductor substrate provided with a channel region ( 21 ), a source region ( 22 ) and a drain region ( 23 ), a gate insulating film ( 3...
15	7576656	Apparatuses and methods for high speed bonding Apparatuses and methods for high speed bonding for an RFID device are provided. A first substrate includes an antenna and is coupled to a strap assembly by an adhesive material. The adhesive...
16	7576398	Method of composite gate formation Methods for forming a nitride barrier film layer in semiconductor devices such as gate structures, and barrier layers, semiconductor devices and gate electrodes are provided. The nitride layer is...
17	7573110	Method of fabricating semiconductor devices Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first...
18	7566938	Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid;...
19	7566904	Thin film transistor having oxide semiconductor layer and manufacturing method thereof A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on...
20	7564114	Semiconductor devices and methods of manufacture thereof Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming an insulating material layer. The method includes forming an interface...
21	7564108	Nitrogen treatment to improve high-k gate dielectrics A MOSFET having a nitrided gate dielectric and its manufacture are disclosed. The method comprises providing a substrate and depositing a non-high-k dielectric material on the substrate. The...
22	7560361	Method of forming gate stack for semiconductor electronic device A method of forming a gate stack for semiconductor electronic devices utilizing wafer bonding of at least one structure containing a high-k dielectric material is provided. The method of the...
23	7554161	HfAlO₃films for gate dielectrics A dielectric film containing HfAlO 3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO 2...
24	7550823	Nonvolatile memory cell, array thereof, fabrication methods thereof and device comprising the same A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide...
25	7550802	Nonvolatile semiconductor memory device and manufacturing process of the same A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an...
26	7547951	Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate...
27	7545000	Schottky barrier tunnel transistor and method of manufacturing the same Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier...
28	7541246	Method of manufacturing semiconductor device A gate insulating film and a gate electrode are formed on a silicon substrate. The gate insulating film contains at least hafnium, oxygen, fluorine, and nitrogen. The fluorine concentration is high...
29	7535067	Transistor in semiconductor devices and method of fabricating the same Disclosed are a transistor in the semiconductor device and method of fabricating the same. A gate oxide film is formed using a nitrification oxide film in a low voltage device region and a gate...
30	7535066	Gate structure and method A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.
31	7531868	Non-volatile semiconductor memory device In a non-volatile semiconductor memory device typically of a MONOS type storing data by trapping charge in a multilayer film composed of a plurality of insulating films, which includes: source and...
32	7521346	Method of forming HfSiN metal for n-FET applications A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k...
33	7518199	Insulating film containing an additive element and semiconductor device An insulating film includes an oxide or an oxynitride of a constituent element having a positive valence. The oxide or the oxynitride contains an additive element having a larger valence than the...
34	7514758	Dual-oxide transistors for the improvement of reliability and off-state leakage The invention provides a transistor having low leakage currents and methods of fabricating the transistor on a semiconductor substrate. The transistor has a gate and a nonuniform gate oxide under...
35	7511326	ALD of amorphous lanthanide doped TiO_xfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
36	7511321	Method for forming a dielectric layer and related devices A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric...
37	7507629	Semiconductor devices having an interfacial dielectric layer and related methods A semiconductor device includes a semiconductor substrate including silicon and an oxide layer on the substrate. The oxide layer includes silicon. An interfacial dielectric layer is disposed on the...
38	7498643	Semiconductor device and method for manufacturing the same It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the...
39	7488634	Method for fabricating flash memory device A method for fabricating a flash memory device is disclosed that improves hot carrier injection efficiency by forming a gate after forming source and drain implants using a sacrificial insulating...
40	7485919	Non-volatile memory A non-volatile memory and a method of fabricating the same are described. First, a substrate is provided. Then, a plurality of stack structures is formed on the substrate. Each stack structure...
41	7482623	Organic semiconductor film and organic semiconductor device An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
42	7476936	Substrate, liquid crystal display having the substrate, and method for producing substrate The substrate ( 10 ) of the present invention includes: a first electrode ( 26 ) and a second electrode ( 30 ). The second electrode ( 30 ) is formed on an insulation film ( 52 ) covering at least...
43	7473625	LDMOS device and method of fabrication An LDMOS device and method of fabrication are provided. The LDMOS device has a substrate with a source region and a drain region formed in the substrate. An insulating layer is provided on a...
44	7470931	Thin film transistor and flat panel display using the same A thin film transistor, and a flat panel display with the same, including a gate electrode, source and drain electrodes, an organic semiconductor layer, and a gate insulating layer. A first...
45	7468301	PMOS transistor with increased effective channel length in the peripheral region and a multi-height substrate In manufacturing a PMOS transistor, a semiconductor substrate having an active region and a field region is formed with a hard mask layer, which covers a center portion of the active region on the...
46	7462915	Method and apparatus for increase strain effect in a transistor channel A semiconductor device having a transistor channel with an enhanced stress is provided. To achieve the enhanced stress transistor channel, a nitride film is preferentially formed on the device...
47	7459757	Transistor structures The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce...
48	7456468	Semiconductor device including high-k insulating layer and method of manufacturing the same A semiconductor memory device a first dopant area and a second dopant area, the first dopant area and the second dopant area disposed in a semiconductor substrate, an insulating layer disposed in...
49	7449756	Semiconductor device with a high-k gate dielectric and a metal gate electrode A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a...
50	7446380	Stabilization of flatband voltages and threshold voltages in hafnium oxide based silicon transistors for CMOS The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based...

Matches 1 - 50 out of 591

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