Patents in Class 257/410

Matches 1 - 50 out of 569

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Match	Document	Document Title
1	7619272	Bi-axial texturing of high-K dielectric films to reduce leakage currents The present invention is directed to a method of fabricating a high-K dielectric films having a high degree of crystallographic alignment at grain boundaries of the film. A disclosed method...
2	7605436	Manufacture of semiconductor device having insulation film of high dielectric constant A method contains the steps of (a) heating a silicon substrate in a reaction chamber; and (b) supplying film-forming gas containing source gas, nitridizing gas, and nitridation enhancing gas to a...
3	7602030	Hafnium tantalum oxide dielectrics A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments...
4	7602016	Semiconductor apparatus and method of manufacturing the same A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film provided therebetween....
5	7602003	Semiconductor device structure for reducing hot carrier effect of MOS transistor A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The...
6	7598568	Semiconductor apparatus and method of manufacturing the same A semiconductor apparatus is disclosed. The semiconductor apparatus comprises a gate electrode formed on a surface of a semiconductor substrate with a gate insulating film provided therebetween....
7	7595538	Semiconductor device A P-type MOSFET 120 includes a semiconductor substrate (N-well 102 b ); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which...
8	7592678	CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof CMOS devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. A CMOS device is formed on a workpiece having a first region and a second...
9	7586163	Semiconductor device having an electrode containing boron and manufacturing method thereof A semiconductor device includes a semiconductor substrate; an insulation film provided on the semiconductor substrate; and an electrode provided on the insulation film, and containing boron and a...
10	7586159	Semiconductor devices having different gate dielectrics and methods for manufacturing the same A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate...
11	7582494	Device structures for reducing device mismatch due to shallow trench isolation induced oxides stresses A circuit and method are disclosed for reducing device mismatch due to trench isolation related stress. One or more extended active regions are formed on the substrate, wherein the active regions...
12	7579661	Semiconductor device, electronic device and electronic apparatus An semiconductor device ( 1 ) of the invention includes a semiconductor substrate provided with a channel region ( 21 ), a source region ( 22 ) and a drain region ( 23 ), a gate insulating film ( 3...
13	7579227	Semiconductor device and method for fabricating the same A semiconductor device includes: a high dielectric constant gate insulating film formed on an active region in a substrate; a gate electrode formed on the high dielectric constant gate insulating...
14	7573110	Method of fabricating semiconductor devices Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first...
15	7573081	Method to fabricate horizontal air columns underneath metal inductor A new method is provided for creating an inductor on the surface of a silicon substrate. The invention provides overlying layers of oxide fins beneath a metal inductor. The oxide fins provide the...
16	7573065	Semiconductor device evaluation method An apparatus for evaluating a field-effect transistor includes a pulse generator, a current/voltage converter, a switch and a first constant-voltage source. The pulse generator can be electrically...
17	7564108	Nitrogen treatment to improve high-k gate dielectrics A MOSFET having a nitrided gate dielectric and its manufacture are disclosed. The method comprises providing a substrate and depositing a non-high-k dielectric material on the substrate. The...
18	7560344	Semiconductor device having a pair of fins and method of manufacturing the same Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading...
19	7557416	Transistor and CVD apparatus used to deposit gate insulating film thereof In a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film, the concentration of fluorine contained in a gate insulating film ( 3 ) is...
20	7554161	HfAlO₃films for gate dielectrics A dielectric film containing HfAlO 3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO 2...
21	7554156	Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high...
22	7547951	Semiconductor devices having nitrogen-incorporated active region and methods of fabricating the same A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate...
23	7538376	Semiconductor integrated circuit device including a semiconductor device having a stable threshold characteristic A semiconductor integrated circuit device includes a substrate, a nonvolatile memory device formed in a memory cell region of the substrate, and a semiconductor device formed in a device region of...
24	7535067	Transistor in semiconductor devices and method of fabricating the same Disclosed are a transistor in the semiconductor device and method of fabricating the same. A gate oxide film is formed using a nitrification oxide film in a low voltage device region and a gate...
25	7535066	Gate structure and method A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition.
26	7535047	Semiconductor device containing an ultra thin dielectric film or dielectric layer An ultra thin dielectric film or dielectric layer on a semiconductor device is disclosed. In one embodiment, an oxide layer is formed over a substrate. A silicon-containing material is deposited...
27	7528434	Production process for a semiconductor component with a praseodymium oxide dielectric The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the...
28	7525144	Insulating film and semiconductor device An insulating film includes an oxide of a metal selected from Hf and Zr, the oxide being doped by at least one of Ba, Sr and Mg. And the insulating film satisfies the following formula (1): ...
29	7521325	Semiconductor device and method for fabricating the same A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film ...
30	7511326	ALD of amorphous lanthanide doped TiO_xfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiO x ) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and...
31	7511321	Method for forming a dielectric layer and related devices A dielectric layer may be formed by depositing the dielectric layer to an intermediate thickness and applying a nitridation process to the dielectric layer of intermediate thickness. The dielectric...
32	7507629	Semiconductor devices having an interfacial dielectric layer and related methods A semiconductor device includes a semiconductor substrate including silicon and an oxide layer on the substrate. The oxide layer includes silicon. An interfacial dielectric layer is disposed on the...
33	7504700	Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method A semiconductor structure and method of forming the same, comprising forming a uniform buffer layer of diffusion-controlling stable material on top of a base gate dielectric layer, and then forming...
34	7504699	Fabrication of a semiconductor device with air gaps for ultra-low capacitance interconnections A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a...
35	7501683	Integrated circuit with protected implantation profiles and method for the formation thereof An integrated circuit structure includes providing a semiconductor substrate and forming at least one oxide-nitride-oxide dielectric layer above the semiconductor substrate. At least one...
36	7498643	Semiconductor device and method for manufacturing the same It is possible to prevent the deterioration of device characteristic as much as possible. A semiconductor device includes: a semiconductor substrate; a gate insulating film provided above the...
37	7492006	Semiconductor transistors having surface insulation layers and methods of fabricating such transistors Semiconductor devices having a transistor and methods of fabricating such devices are disclosed. The device may include a gate pattern formed on a substrate, spacers formed on sidewalls of the gate...
38	7482623	Organic semiconductor film and organic semiconductor device An organic semiconductor device includes a substrate, a gate electrode formed directly on the substrate , gate insulating film formed directly on the gate electrode, a source electrode and a drain...
39	7479684	Field effect transistor including damascene gate with an internal spacer structure A MOSFET is disclosed that comprises a channel between a source extension and a drain extension, a dielectric layer over the channel, a gate spacer structure formed on a peripheral portion of the...
40	7473652	Organic polymers, electronic devices, and methods Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R 1 is independently H, an aryl group, Cl, Br, I, or an organic group...
41	7462554	Method for forming semiconductor device with modified channel compressive stress A method for forming a semiconductor device provides for forming a gate region on top of a substrate. Gate sidewall liners are formed on opposed sides of the gate region, the sidewall liners having...
42	7459757	Transistor structures The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce...
43	7456468	Semiconductor device including high-k insulating layer and method of manufacturing the same A semiconductor memory device a first dopant area and a second dopant area, the first dopant area and the second dopant area disposed in a semiconductor substrate, an insulating layer disposed in...
44	7449756	Semiconductor device with a high-k gate dielectric and a metal gate electrode A semiconductor device is described. That semiconductor device comprises a high-k gate dielectric layer that is formed on a substrate that applies strain to the high-k gate dielectric layer, and a...
45	7446367	Reliable gap-filling process and apparatus for performing the process in the manufacturing of semiconductor devices A reliable gap-filling process is performed in the manufacturing of a semiconductor device. An apparatus for performing the gap-filling process includes a chamber in which a wafer chuck is...
46	7436034	Metal oxynitride as a pFET material A compound metal comprising MO x N y which is a p-type metal having a workfunction of about 4.75 to about 5.3, preferably about 5, eV that is thermally stable on a gate stack comprising a high k...
47	7427791	Method of forming a CMOS structure having gate insulation films of different thicknesses The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the...
48	7427573	Forming composite metal oxide layer with hafnium oxide and titanium oxide A metal oxide alloy layer comprises a first layer including a first metal oxide and having a first thickness, and a second layer formed on the first layer, the second layer including a second metal...
49	7423326	Integrated circuits with composite gate dielectric CMOS gate dielectric made of high-k metal silicates by passivating a silicon surface with nitrogen compounds prior to high-k dielectric deposition. Optionally, a silicon dioxide monolayer may be...
50	7417290	Air break for improved silicide formation with composite caps Disclosed is a structure and method for tuning silicide stress and, particularly, for developing a tensile silicide region on a gate conductor of an n-FET in order to optimize n-FET performance....

Matches 1 - 50 out of 569

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