Matches 1 - 50 out of 463 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
7612371 Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors  
The present invention addresses detection of charge-induced defects through test structures that can be easily incorporated on a wafer to detect charge-induced damage in the back-end-of-line...
7605446 Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation  
A bipolar high voltage/power semiconductor device has a drift region having adjacent its ends regions of different conductivity types respectively. High and low voltage terminals are provided. A...
7595537 MOS type semiconductor device having electrostatic discharge protection arrangement  
In a semiconductor device, a well region is formed in a semiconductor substrate, a transistor-formation region is defined in the well region. An electrostatic discharge protection device is...
7589378 Power LDMOS transistor  
A laterally diffused metal-oxide-semiconductor transistor device includes a substrate having a first conductivity type with a semiconductor layer formed over the substrate. A source region and a...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7566935 ESD structure without ballasting resistors  
An electrostatic discharge (ESD) structure connected to a bonding pad in an integrated circuit comprising: a P-type substrate with one or more first P+ regions connected to a low voltage supply...
7566915 Guard ring extension to prevent reliability failures  
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal...
7564107 Power semiconductor device including a terminal structure  
A semiconductor device is disclosed, which comprises a terminal section formed to surround a device active region. The terminal section includes a trench formed in the semiconductor layer, and a...
7563685 Bipolar-transistor and method for the production of a bipolar-transistor  
The invention relates to NPN and PNP bipolar transistors and to a method for the production thereof, said transistors being characterised by a particularly high collector-emitter and collector-base...
7560787 Trench field plate termination for power devices  
In accordance with an embodiment of the invention, a semiconductor power device includes an active region configured to conduct current when the semiconductor device is biased in a conducting...
7557394 High-voltage transistor fabrication with trench etching technique  
A lateral high-voltage depletion-mode device structure in which fingers of semiconductor material are interdigitated with trench gates. Since the effective channel area is proportional to the depth...
7554164 Semiconductor device having a gap between a gate electrode and a dummy gate electrode  
A method of deforming a pattern comprising the steps of: forming, over a substrate, a layered-structure with an upper surface including at least one selected region and at least a re-flow stopper...
7554154 Bottom source LDMOSFET structure and method  
This invention discloses bottom-source lateral diffusion MOS (BS-LDMOS) device. The device has a source region disposed laterally opposite a drain region near a top surface of a semiconductor...
7538346 Semiconductor device  
A semiconductor device is disclosed. The device includes a substrate and a first wiring layer overlying the substrate. The first wiring layer comprises a first wiring area surrounded by a first...
7537983 MOSFET  
In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first...
7528724 On die RFID tag antenna  
Wirelessly testing an RFID tag before it is packaged or otherwise entered into a process reserved for “working” RFID tags is described. Various processes that employ such wireless testing as...
7528442 Semiconductor device and manufacturing method thereof  
In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the...
7525178 Semiconductor device with capacitively coupled field plate  
A termination region of a semiconductor die is provided, which includes one or more field rings arranged in the termination region, one or more metal field plates, and an insulation layer disposed...
7521768 Electric device comprising an LDMOS transistor  
The LDMOS transistor ( 99 ) of the invention is provided with a stepped shield structure ( 50 ) and/or with a first ( 25 ) and a second ( 26 ) drain extension region having a higher dopant...
7521755 Trench semiconductor device of improved voltage strength, and method of fabrication  
A trench IGBT is disclosed which includes a semiconductor substrate having formed therein a set of cell trenches formed centrally and a set of annular guard trenches concentrically surrounding the...
7517762 Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse area  
A fuse area of a semiconductor device capable of preventing moisture-absorption and a method for manufacturing the fuse area are provided. When forming a guard ring for preventing permeation of...
7498664 Semiconductor package having increased resistance to electrostatic discharge  
Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate having an integrated circuit die attached thereto. The package includes a ESD shield...
7495286 High-voltage semiconductor device structure  
A high-voltage semiconductor device structure is provided, which includes a drain structure having two curved structures that are insulatedly adjacent to each other and alternatively arranged, and...
7492029 Asymmetric field effect transistors (FETs)  
A semiconductor structure. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source...
7492018 Isolating substrate noise by forming semi-insulating regions  
An integrated circuit structure for isolating substrate noise and a method of forming the same are provided. In the preferred embodiment of the present invention, a semi-insulating region is formed...
7489011 Semiconductor device containing dielectrically isolated PN junction for enhanced breakdown characteristics  
A semiconductor device includes a field shield region that is doped opposite to the conductivity of the substrate and is bounded laterally by dielectric sidewall spacers and from below by a PN...
7485921 Trench gate type MOS transistor semiconductor device  
This semiconductor device comprises a first semiconductor layer of a first conductivity type, an epitaxial layer of a first conductivity type formed in the surface on the first semiconductor layer,...
7479678 Semiconductor element and method of manufacturing the same  
A semiconductor element is provided, comprising a first semiconductor layer of the first conduction type; and a pillar layer including first semiconductor pillars of the first conduction type and...
7456451 Ultra high voltage MOS transistor device  
An ultra high voltage MOS transistor device includes a substrate of a first conductivity type; a source region of a second conductivity type formed in the substrate; a first doping region of the...
7453128 Semiconductor device and method for fabricating the same  
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in...
7449748 Semiconductor device  
The invention is directed to a method for manufacturing a field plate of a high voltage device. The field plate is located on a drift region of a substrate, wherein an isolation structure is...
7446374 High density trench FET with integrated Schottky diode and method of manufacture  
A monolithically integrated trench FET and Schottky diode includes a pair of trenches terminating in a first silicon region of first conductivity type. Two body regions of a second conductivity...
7446373 Semiconductor component and method for producing it  
A semiconductor component and also a method for producing it are disclosed. In one embodiment, the semiconductor component includes a surface region or a modified doping region is provided...
7432551 SOI semiconductor device including a guard ring region  
An object is to increase the amount of substrate noise absorbed in a guard ring, and to prevent a malfunction caused by the substrate noise in a semiconductor device including an SOI substrate...
7423299 Semiconductor devices with a field shaping region  
A semiconductor device, for example a diode ( 200 ), having a pn junction ( 101 ) has an insulating material field shaping region ( 201 ) adjacent, and possibly bridging, the pn junction. The field...
7420255 Semiconductor device incorporating protective diode with stable ESD protection capabilities  
A semiconductor device provided with stable ESD protection capabilities, incorporating a transistor and a protective diode to form a power control IC. The semiconductor device includes a...
7419877 Methods of fabricating silicon carbide devices including multiple floating guard ring edge termination  
Edge termination for silicon carbide devices has a plurality of concentric floating guard rings in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide-based...
7411257 Semiconductor device having guard ring and manufacturing method thereof  
An interlayer insulation film is etched to form contact holes in an integrated circuit part. At this time, a trench is not formed in a guard ring part. Subsequently, ion implantation is carried out...
7409660 Method and end cell library for avoiding substrate noise in an integrated circuit  
A method of avoiding substrate noise in an integrated circuit includes steps of receiving as input an integrated circuit design that includes at least a portion of a block for placement and routing...
7408234 Semiconductor device and method for manufacturing the same  
An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for...
7408206 Method and structure for charge dissipation in integrated circuits  
Methods and structures and methods of designing structures for charge dissipation in an integrated circuit on an SOI substrate. A first structure includes a charge dissipation ring around a...
7405458 Asymmetric field transistors (FETs)  
A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the...
7397083 Trench fet with self aligned source and contact  
A trench type power MOSgated device has a plurality of spaced trenches lined with oxide and filled with conductive polysilicon. The tops of the polysilicon fillers are below the top silicon surface...
7394137 Semiconductor device  
A semiconductor device including: a semiconductor layer; a gate insulating layer; a gate electrode; a channel region; a source region and a drain region; a guard ring region; an offset insulating...
7391093 Semiconductor device with a guard-ring structure and a field plate formed of polycrystalline silicon film embedded in an insulating film  
A semiconductor device has a semiconductor device chip with upper and lower terminal electrodes, and upper and lower frames bonded to the upper and lower terminal electrodes, respectively, with...
7388266 Structure for leakage prevention of a high voltage device  
A structure for preventing leakage of a high voltage device is provided. The structure comprises a conductive layer, for shielding the features beneath thereof, located under a conductive line...
7382030 Integrated metal shield for a field effect transistor  
The present invention relates to a semiconductor device having an integrated metal shield. The shield, created as part of a MOSFET, is formed about a gate electrode of the MOSFET to effectively...
7375398 High voltage FET gate structure  
A FET device for operation at high voltages includes a substrate, a first well and a second well within the substrate that are doped with implants of a first type and second type, respectively. The...
7372103 MOS field plate trench transistor device  
A MOS field plate trench transistor device is disclosed. In one embodiment, in order to obtain a lowest possible on resistance, in the case of a MOS field plate trench transistor device having a...
7368793 HEMT transistor semiconductor device  
The semiconductor device of the present invention includes a device formation region formed on a substrate and including at least one semiconductor region, and a first electrode and a second...
Matches 1 - 50 out of 463 1 2 3 4 5 6 7 8 9 10 >