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8171441 Integrated circuit devices and methods and apparatuses for designing integrated circuit devices  
Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is...
8169039 Semiconductor device  
A disclosed semiconductor device includes an MOS transistor having an N-type low-concentration drain region, a source region, an ohmic drain region, a P-type channel region, an ohmic channel...
8169038 Semiconductor device and method of manufacturing the same  
A semiconductor device and a method of manufacturing the same are disclosed. The method includes forming ion impurity regions of a first conductivity type by forming a trench in a semiconductor...
8164139 MOSFET structure with guard ring  
A trench Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) structure with guard ling, includes: a substrate including an epi layer region on the top thereof a plurality of source and body...
8166434 Integrated circuit devices and methods and apparatuses for designing integrated circuit devices  
Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is...
8159024 High voltage (>100V) lateral trench power MOSFET with low specific-on-resistance  
In one aspect, a lateral MOS device is provided. The lateral MOS device includes a gate electrode disposed at least partially in a gate trench to apply a voltage to a channel region, and a drain...
8161442 Integrated circuit devices and methods and apparatuses for designing integrated circuit devices  
Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is...
8148788 Semiconductor device and method of manufacturing the same  
The invention is directed to reduction of a manufacturing cost and enhancement of a breakdown voltage of a PN junction portion abutting on a guard ring. An N− type semiconductor layer is formed o...
8148783 Semiconductor device  
Semiconductor device including semiconductor layer, first impurity region on surface layer portion of semiconductor layer, body region at interval from first impurity region, second impurity region...
8143679 Termination structure for power devices  
A semiconductor power device includes an active region configured to conduct current when the semiconductor device is biased in a conducting state, and a termination region along a periphery of the...
8143680 Gated diode with non-planar source region  
A gated-diode semiconductor device or similar component and a method of fabricating the device. The device features a gate structure disposed on a substrate over a channel and adjacent a source and...
8133773 Apparatus and method for reducing photo leakage current for TFT LCD  
In one aspect of the invention, the method of forming a TFT array panel includes forming a patterned first conductive layer on a substrate, forming a gate insulating layer on the patterned first...
8134207 High breakdown voltage semiconductor circuit device  
In a high breakdown voltage semiconductor element among elements integrated together on an SOI substrate in which its rated voltage is shared between an embedded oxide layer and a drain region...
8125052 Seal ring structure with improved cracking protection  
An integrated circuit structure includes a semiconductor chip comprising a plurality of dielectric layers, wherein the plurality of dielectric layers includes a top dielectric layer; and a first...
8119460 Semiconductor device and method of forming the same  
A semiconductor device includes a plurality of transistors disposed on a semiconductor substrate, a device isolation layer disposed around the transistors, a guard ring disposed to surround the...
8122412 Shelding mesh design for an integrated circuit device  
Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is...
8115253 Ultra high voltage MOS transistor device  
An ultra high voltage MOS transistor device includes a substrate having a first conductive type, a first well having a second conductive type and a second well having the first conductive type...
8110449 Semiconductor device and method of manufacturing the same  
The HVIC includes a dielectric layer and an SOI active layer stacked on a silicon substrate, a transistor formed in the surface of the SOI active layer, and a trench isolation region formed around...
8110853 Guard ring structures for high voltage CMOS/low voltage CMOS technology using LDMOS (lateral double-diffused metal oxide semiconductor) device fabrication  
A semiconductor structure. The semiconductor structure includes a semiconductor substrate, a first transistor on the semiconductor substrate, and a guard ring on the semiconductor substrate. The...
8097925 Integrated circuit guard rings  
Integrated circuits with guard rings are provided. Integrated circuits may include internal circuitry that is sensitive to external noise sources. A guard ring may surround the functional circuitry...
8093676 Semiconductor component including an edge termination having a trench and method for producing  
A semiconductor component includes a semiconductor body having a first side, a second side, an edge delimiting the semiconductor body in a lateral direction, an inner region and an edge region. A...
8093145 Methods for operating and fabricating a semiconductor device having a buried guard ring structure  
Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation....
8080846 Semiconductor device having improved breakdown voltage and method of manufacturing the same  
A semiconductor device is disclosed which improves the breakdown voltage of a planar-type junction edge terminating structure. The device includes an n-type semiconductor substrate layer common to...
8072035 Semiconductor device and method of manufacturing the same  
In an LCD driver, in a high voltage resistant MISFET, end portions of a gate electrode run onto electric field relaxing insulation regions. Wires to become source wires or drain wires are formed on...
8074197 Shielding mesh design for an integrated circuit device  
Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is...
8063445 Semiconductor device and method of manufacturing the same  
Provided is a semiconductor device which includes a metal oxide semiconductor (MOS) transistor having high driving performance and high withstanding voltage with a thick gate oxide film. In the...
8053848 Semiconductor device and method of forming the same  
A semiconductor device includes a plurality of transistors disposed on a semiconductor substrate, a device isolation layer disposed around the transistors, a guard ring disposed to surround the...
8049295 Coupling well structure for improving HVMOS performance  
A semiconductor structure includes a substrate, a first well region of a first conductivity type overlying the substrate, a second well region of a second conductivity type opposite the first...
8039905 Semiconductor device  
A semiconductor device includes a substrate having a first area and a second area, a first transistor in the first area, a second transistor in the second area, an isolation layer between the first...
8039906 High-voltage metal oxide semiconductor device and fabrication method thereof  
A high-voltage metal oxide semiconductor device comprising a main body of a first conductivity type, a conductive structure, a first well of a second conductivity type, a source region of the first...
8030702 Trenched MOSFET with guard ring and channel stop  
A trenched MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) with a guard ring and a channel stop, including: a substrate including an epi layer region on the top thereof; a plurality of...
8021984 Method for manufacturing semiconductor  
A method for manufacturing a semiconductor includes forming an active region for an ESD device, an active region for a first polygate and the semiconductor, and a second polygate having a form of a...
8022480 Semiconductor device and method for manufacturing the same  
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device includes at least two of first and second conductive-type high-voltage transistors and first...
8008734 Power semiconductor device  
A power semiconductor device is provided having a field plate that employs a thick metal film in an edge termination structure and which permits edge termination structure width reduction even with...
8004051 Lateral trench MOSFET having a field plate  
One embodiment relates to an integrated circuit that includes a lateral trench MOSFET disposed in a semiconductor body. The lateral trench MOSFET includes source and drain regions having a body...
8004039 Field effect transistor with trench-isolated drain  
A MOS transistor includes a body region of a first conductivity type, a conductive gate and a first dielectric layer, a source region of a second conductivity type formed in the body region, a...
7999317 Semiconductor device and manufacturing method thereof  
A p-type body region and an n-type buffer region are formed on an n− drift region. An n++ emitter region and a p++ contact region are formed on the p-type body region in contact with each other. A...
7999333 Semiconductor device  
In a conventional semiconductor device, there has been a problem that, in a region where a wiring layer to which a high electric potential is applied traverses a top surface of an isolation region,...
7994589 Semiconductor device and method for fabricating the same  
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in...
7973361 High breakdown voltage semiconductor device and fabrication method of the same  
A high breakdown voltage semiconductor device is formed using an SOI substrate comprising a support substrate, an insulating film, and an active layer. The high breakdown voltage semiconductor...
7968936 Quasi-vertical gated NPN-PNP ESD protection device  
Fashioning a quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection device is disclosed. The QVGNP ESD protection device has a well having one conductivity type formed...
7968976 Guard ring extension to prevent reliability failures  
An embodiment of the present invention is a technique to prevent reliability failures in semiconductor devices. A trench is patterned in a polyimide layer over a guard ring having a top metal...
7964912 High-voltage vertical transistor with a varied width silicon pillar  
In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and...
7964931 Semiconductor device  
A semiconductor device 1 includes a square substrate 2, first RESURF structures 3 in the shape of planar stripes on an element area 10 of a main surface of the substrate 2, a transistor T arranged...
7960198 Method of making a semiconductor device with surge current protection  
A wide bandgap semiconductor device with surge current protection and a method of making the device are described. The device comprises a low doped n-type region formed by plasma etching through...
7960781 Semiconductor device having vertical charge-compensated structure and sub-surface connecting layer and method  
In one embodiment, a semiconductor device is formed having vertical localized charge-compensated trenches, trench control regions, and sub-surface doped layers. The vertical localized...
7952145 MOS transistor device in common source configuration  
A semiconductor device includes a semiconductor substrate, a first p-channel laterally diffused metal oxide semiconductor (LDMOS) transistor formed over the semiconductor substrate and additional...
7948039 Semiconductor device and method for fabricating the same  
A seal ring structure is formed through a multilayer structure of a plurality of dielectric films in a peripheral part of a chip region to surround the chip region. A dual damascene interconnect in...
7936042 Field effect transistor containing a wide band gap semiconductor material in a drain  
A field effect transistor comprising a silicon containing body is provided. After formation of a gate dielectric, gate electrode, and a first gate spacer, a drain side trench is formed and filled...
7927887 Method of fabricating a dielectric-modulated field effect transistor comprising a biomolecules layer formed in a space where a sacrificial layer has been removed  
The present invention relates to a Field-Effect Transistor (FET) and, more particularly, to a Dielectric-Modulated Field-Effect Transistor (DMFET) and a method of fabricating the same. A DMFET...
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