Matches 401 - 450 out of 466 < 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
4998146 High voltage thin film transistor  
A high voltage thin film transistor comprising a charge transport layer, source and drain electrodes laterally spaced from one another and each being in low electrical resistance contact with the...
4990982 Semiconductor device of high breakdown voltage  
The semiconductor device is of high break down voltage type and has a source, drain and a gate deposited therebetween on the semiconductor substrate. The gate oxide film has a thick portion and...
4968639 Process for manufacturing CMOS integrated devices with reduced gate lengths  
A process for manufacturing CMOS integrated devices with gate lengths of less than one micron and high supply voltage is described. In order to improve the resistance of CMOS devices to breakdown...
4951100 Hot electron collector for a LDD transistor  
A lightly-doped drain (LDD) structure has conductive shield overlying the lightly-doped drain and source portions to collect and/or remove hot carriers which can otherwise cause instabilities such...
4937642 Bidirectional MOS switch  
A bidirectional semiconductor switch is produced in a semiconductor layer, such as silicon, arranged on an insulating base of, for example, sapphire. The switch has two highly doped main contact...
4937643 Devices having tantalum silicide structures  
A method for fabricating a device which includes a tantalum silicide structure, and which is essentially free of conductive etch residues, is disclosed. The method includes the steps of depositing...
4933730 Semiconductor device having a high breakdown voltage characteristic  
A metal insulator semiconductor device having a high breakdown voltage characteristic and a fabricating method thereof. The device comprises a depletion region and an enhancement region formed in a...
4931850 Semiconductor device including a channel stop region  
An insulated gate SIT (IBCM-SIT) which is substantially free from punch-through and hot carriers and exhibits a triode characterisic. Also, an insulated gate SIT (ISIS-SIT) which exhibit a tetrode...
4931844 High power transistor with voltage, current, power, resistance, and temperature sensing capability  
One or more probe cells are use to sense voltage and current accurately and without affecting performance of the switching device (T 1 ) or the load. In addition, power, resistance, and temperature...
4924280 Semiconductor fet with long channel length  
In a semiconductor device having an external input terminal, a first insulated-gate field-effect transistor formed on a semiconductor substrate, and having a gate connected to the input terminal,...
4920393 Insulated-gate field-effect semiconductor device with doped regions in channel to raise breakdown voltage  
An insulated-gate field-effect semiconductor device comprising a silicon substrate of a first conductivity type, heavily doped source and drain regions of a second conductivity type in the...
4823173 High voltage lateral MOS structure with depleted top gate region  
The present invention provides an improved lateral drift region for both bipolar and MOS devices where improved breakdown voltage and low ON resistance are desired. A top gate of the same...
4819045 MOS transistor for withstanding a high voltage  
An improved lateral MOS transistor with higher withstand voltage is shown. The transistor is provided with a drift region (19) formed so as to surround a drain region (7) thereof. The curved...
4811075 High voltage MOS transistors  
An insulated-gate, field-effect transistor and a double-sided, junction-gate field-effect transistor are connected in series on the same chip to form a high-voltage MOS transistor. An extended...
4808544 LDD structure containing conductive layer between gate oxide and sidewall spacer  
A method for manufacturing a semiconductor device is disclosed in which two essential process steps of forming a side wall spacer insulating film on a side wall of the gate electrode layer by...
4796070 Lateral charge control semiconductor device and method of fabrication  
A lateral charge control semiconductor device is disclosed wherein a plurality of gate filled trenches are disposed in side-by-side relation within a partially processed semiconductor wafer to...
4794565 Electrically programmable memory device employing source side injection  
An electrically programmable and eraseable memory element using source-side hot-electron injection. A semi-conductor substrate of a first conductivity type is provided with a source region and a...
4794436 High voltage drifted-drain MOS transistor  
A heavily doped P region is formed at the end of a lightly doped P- drain extension adjacent to the channel of a P channel MOS transistor. If the PMOS transistor is fabricated in an N-well...
4777521 High voltage semiconductor devices  
A high voltage semiconductor device includes a two-dimensional array of polygonal regions in a higher resistivity body portion of the opposite conductivity type. The p-n junction between these...
4766474 High voltage MOS transistor  
A MOS transistor is featured by providing mult-layered covering elements for covering a channel region of the semiconductor device. Each of the covering elements is interposed by an insulating...
4757362 High voltage MOS transistor  
A MOS transistor is featured by the provision of a conductive covering element for covering a drift channel region of the semiconductor device. The covering element is interposed by an insulating...
4752814 High voltage thin film transistor  
A high voltage amorphous silicon thin film transistor including a gate electrode which controls the injection of charge carriers from a superimposed n+ doped amorphous silicon source electrode into...
4680605 High voltage depletion mode transistor with serpentine current path  
A depletion mode MOS transistor which can function like a constant current source, when its gate is connected to the source and its drain is held at a fixed voltage even above 40 volts. In addition...
4633292 Semiconductor component with planar structure  
Planar semiconductor component which has a substrate of one conduction type, and a contact-connected zone of opposite conductivity type embedded in the surface of the substrate in planar fashion...
4614959 Improved high voltage MOS transistor with field plate layers for preventing reverse field plate effect  
A metal oxide semiconductor device is featured by the provision of at least two field plate elements interposed by an insulating layer. The field plate elements are connected from a drain electrode...
4612465 Lateral bidirectional notch FET with gates at non-common potentials  
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and...
4597159 Method of manufacturing SiO.sub.2 -Si interface for floating gate semiconductor device  
A semiconductor device is manufactured by forming a first insulating film on a surface of a semiconductor substrate of a first conductivity type, and a first nonmonocrystalline silicon film is...
4574209 Split gate EFET and circuitry  
Lateral FET structure is disclosed for bidirectional power switching. A split gate structure is provided to prevent unwanted formation of potential conduction channels in the OFF state of the FET....
4574208 Raised split gate EFET and circuitry  
Lateral FET structure is disclosed for bi-directional power switching. A raised gate structure enables distal gate electrode portions to be in close proximity to FET channels and the remainder of...
4574207 Lateral bidirectional dual notch FET with non-planar main electrodes  
Lateral FET structure is disclosed for bidirectional power switching, including AC appliction. Main electrodes extend downwardly into and through respective source regions and at least into regions...
4571512 Lateral bidirectional shielded notch FET  
Lateral FET structure is disclosed for bidirectional power switching, including AC application. Voltage blocking capability is substantially increased by a shielding electrode insulated between...
4571513 Lateral bidirectional dual notch shielded FET  
Lateral FET Structure is disclosed for bidirectional power switching, including AC application. A pair of notches, each with a gate electrode, extend downwardly from a top major surface to separate...
4529456 Method of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layer  
The present invention relates to a method of manufacturing a semiconductor integrated circuit device, especially a Bi-MOS IC. It comprises: 1. introducing an impurity of a first conductivity...
4490629 High voltage circuits in low voltage CMOS process  
A CMOS push-pull output buffer (171) is constructed utilizing a plurality of N channel transistors (74, 75, 76) and a plurality of P channel transistors (71, 72, 73) connected in series. The...
4471373 Semiconductor integrated circuit device with memory MISFETS and thin and thick gate insulator MISFETS  
A semiconductor integrated circuit device and a method of manufacturing the same, wherein an MIS type memory transistor of a two-layered gate electrode structure is formed on the surface of a...
4461072 Method for preparing an insulated gate field effect transistor  
Disclosed here is an IGFET formed on the single crystal silicon substrate where the major plane surface is deviated within the range from 22 degree to 34 degree toward the crystallographic surface...
4429237 High voltage on chip FET driver  
High voltage tolerant FET circuits are characterized by the use of shield structures surrounding source/drain diffusion pockets, with the shields tied to apropriate potentials, which in some cases...
4414560 Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region  
A high-voltage, high current switching device is formed of two D-MOS transistors which are merged together to have a common drain and insulated metal gate. At the time P-type regions for the two...
4385947 Method for fabricating CMOS in P substrate with single guard ring using local oxidation  
CMOS transistors are fabricated in a P substrate by applying a first mask with an opening for introducing N type impurities to form a well, applying a second mask layer of oxidation inhibiting...
4322822 High density VMOS electrically programmable ROM  
An electrically programmable memory array is made by a process in which the memory elements are capacitor devices formed in anisotropically etched V-grooves to provide enhanced dielectric breakdown...
4317274 Method of producing a semiconductor device  
This invention relates to a method of producing a semiconductor device, and more particularly to a method of leading out an electrode for a semiconductor substrate. A conductor layer of...
4313768 Method of fabricating improved radiation hardened self-aligned CMOS having Si doped Al field gate  
A radiation hardened CMOS formed by applying a radiation hard gate oxide layer on a silicon substrate, by applying silicon doped aluminum gates on the gate oxide, and by ion implanting and...
4308549 High voltage field effect transistor  
A circular high voltage field effect transistor suitable for inclusion in LSI circuits, and the process for making said transistor, are described. The transistor comprises a central drain and...
4290077 High voltage MOSFET with inter-device isolation structure  
Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for inter-device isolation are able to function as...
4290078 High voltage MOSFET without field plate structure  
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect Transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers...
4288802 HVMOSFET Driver with single-poly gate structure  
Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for inter-device isolation are able to function as...
4288806 High voltage MOSFET with overlapping electrode structure  
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers...
4288801 Monolithic HVMOSFET active switch array  
Integrated monolithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers...
4288803 High voltage MOSFET with doped ring structure  
Integrated monlithic arrays of high voltage metal oxide semiconductor field effect transistors having closed geometry grounded peripheries for interdevice isolation are able to function as drivers...
4285117 Method of manufacturing a device in a silicon wafer  
Portions of a doped silicon body 22 are covered with an oxide dielectric 26 leaving the active areas 25 on the silicon body exposed. A polysilicon layer 28 having a predetermined resistance...
Matches 401 - 450 out of 466 < 1 2 3 4 5 6 7 8 9 10 >