Matches 351 - 400 out of 466 < 1 2 3 4 5 6 7 8 9 10 >
Match Document Document Title
5237196 Semiconductor device and method for manufacturing the same  
A poly-Si film is formed on a first insulating film overlying a semiconductor substrate. A second insulating film is formed on the poly-Si film. The poly-Si film comprises a layered structure of a...
5237193 Lightly doped drain MOSFET with reduced on-resistance  
Construction method and apparatus for lightly doped drain MOSFET that has low or minimum drift on-state resistance and maintains high voltage blocking in the off-state. Temperature sensitivity of...
5229633 High voltage lateral enhancement IGFET  
A method of manufacturing a semiconductor device including both an enhancement (1) insulated gate field effect transistor (IGFET) and a depletion (2) mode IGFET is described. Impurities are...
5225704 Field shield isolation structure for semiconductor memory device and method for manufacturing the same  
In a DRAM having stacked capacitor cells, elements are isolated by field shield isolating structure. The field shield isolating structure is formed surrounding both X and Y directions of the memory...
5223735 Semiconductor integrated circuit device in which circuit functions can be remedied or changed and the method for producing the same  
A semiconductor integrated circuit device in which circuit functions can be remedied or changed by severing at least a portion of a circuit pattern and a method for producting such semiconductor...
5221851 Controlled-turn-off high-power semiconductor component  
In a large-area controlled-turn-off high-power semiconductor component containing a multiplicity of finely structured individual components, a semiconductor device (12) is formed by a multiplicity...
5216272 High withstanding voltage MIS transistor  
A high withstanding voltage MIS transistor, including an offset region and a double offset region in a region of a semiconductor substrate. The region of the semiconductor substrate has a first...
5204545 Structure for preventing field concentration in semiconductor device and method of forming the same  
There is provided p diffusion regions (18a, 18b) in the surface of an end portion of the n island (7) formed on the p - substrate (12). The insulation film (14) is formed on the n island (7) to...
5200637 MOS transistor and differential amplifier circuit with low offset  
A MOS transistor includes a gate electrode layer formed on an insulation layer which is formed on an element formation region defined by a field insulation layer formed on a P-type semiconductor...
5187552 Shielded field-effect transistor devices  
Field-effect transistor devices are provided having a relatively substantial capability to withstand reverse bias voltages. This capability is provided through providing shields in these devices...
5181090 High voltage CMOS devices  
A semiconductor memory and method of manufacture which are particularly useful for a high breakdown voltage EEPROM wherein high breakdown voltage transistors which are employed in a relatively...
5168340 Semiconductor integrated circuit device with guardring regions to prevent the formation of an MOS diode  
This invention relates to a semiconductor integrated circuit device wherein guardring regions are formed between a first element region and a second element region so as to surround the first...
5164806 Element isolating structure of semiconductor device suitable for high density integration  
An element isolating structure employed for isolating the elements of a semiconductor substrate has an impurity region having a concentration lower than that of a source/drain and a channel stop...
5162888 High DC breakdown voltage field effect transistor and integrated circuit  
A field effect transistor device formed on an integrated circuit chip substrate and driven by the on-chip voltages having a well region formed in the substrate, and source and drain regions one of...
5162883 Increased voltage MOS semiconductor device  
The present invention relates to an increased operating voltage MOS semiconductor device. The device has a channel forming area between a source and extended drain area, a gate insulating film over...
5144388 Semiconductor device having a plurality of FETs formed in an element area  
According to this invention, in an element region formed in a semiconductor substrate, a plurality of regions for constituting one electrode of source and drain electrodes of an FET are formed. A...
5144389 Insulated gate field effect transistor with high breakdown voltage  
An MIS FET has an off-set gate structure in which a gate electrode and a drain region. The drain region is formed of an n type impurity region of a high concentration and has a pn junction region...
5140392 High voltage MOS transistor and production method thereof, and semiconductor device having high voltage MOS transistor and production method thereof  
A high voltage MOS transistor includes a semiconductor substrate (1) of a first semiconductor type, a gate electrode (14) formed on the semiconductor substrate via a gate oxide layer (13), first...
5138409 High voltage semiconductor device having silicon-on-insulator structure with reduced on-resistance  
A high-voltage metal-oxide-semiconductor transistor device having a semiconductor-on-insulator structure comprises a substrate, an insulator layer provided on the substrate, a semiconductor layer...
5130767 Plural polygon source pattern for mosfet  
A high power MOSFET has a plurality of closely packed polygonal sources spaced from one another on one surface of a semiconductor body. An elongated gate electrode is exposed in the spacing between...
5128730 Semiconductor device and a circuit suitable for use in an intelligent power switch  
A semiconductor device and a circuit suitable for use in an intelligent power switch include an insulated gate field effect transistor (IGFET) (T2) and a power semiconductor switch (T1). The...
5124763 Insulated-gate type integrated circuit  
A P-well region is provided in a semiconductor substrate of N-type. A P-channel MOSFET is arranged in the N-type substrate while an N-channel MOSFET is arranged in the P-well region. The drain...
5113230 Semiconductor device having a conductive layer for preventing insulation layer destruction  
On a semiconductor substrate between the source region and drain region, there is provided a gate electrode, through an insulation layer. There is further provided a conductive layer partially...
5109266 Semiconductor integrated circuit device having high breakdown-voltage to applied voltage  
A semiconductor integrated circuit device according to the present invention has a field plate disposed between the element isolation region which surrounds a semiconductor active element and an...
5101248 Semiconductor device  
An electrically erasable and programmable non-volatile semiconductor having a selection transistor, a memory transistor, and a logic transistor. The selection transistor has a first gate insulating...
5095343 Power MOSFET  
A VDMOS device includes a wafer of semiconductor material having first and second opposed major surfaces. A drain region of a first conductivity type extends along the one major surface. A...
5089871 Increased voltage MOS semiconductor device  
The present invention relates to an increased operating voltage MOS semiconductor device. The device has a channel forming area between a source and extended drain area, a gate insulating film over...
5087954 MOS-type integrated circuit  
In a MOS-type integrated circuit, a source and a gate of a double diffusion MOSFET of an n-channel type and a drain and a gate of a double diffusion MOSFET of a p-channel type are in an island...
5086332 Planar semiconductor device having high breakdown voltage  
A planar semiconductor device having a high breakdown voltage includes a semiconductor layer of a first conductivity type and a first semiconductor region of a second conductivity type selectively...
5086322 Input protection circuit and output driver circuit comprising MIS semiconductor device  
An MIS transistor comprises first and second concave grooves (17, 17) opposing to each other with a gate electrode (4, 39) provided therebetween. Source and drain regions (8a, 8b, 31, 34) are...
5072265 P-channel insulation gate type bipolar transistor  
A p-channel insulation gate type bipolar transistor, wherein the thickness and specific resistivity of the p + layer and p - layer, respectively, are constrained so as to avoid avalanche...
5072267 Complementary field effect transistor  
Complementary field effect transistors are provided wherein double-diffusion MOS FETs including an N-channel and a P-channel are formed on one and the same semiconductor substrate. These two...
5072268 MOS gated bipolar transistor  
A high voltage transistor includes a substrate of a first conductivity type. Within the substrate is a well region of a second conductivity type. A source region is within the substrate and adjoins...
5070377 Semiconductor device and method of manufacturing the same  
An N drift region (42) is provided in its surface with a P + well region (43) of a square ring shape and a P region (51) formed in the center of the square ring. The P region (51) is relatively...
5055896 Self-aligned LDD lateral DMOS transistor with high-voltage interconnect capability  
Our invention is an annular-shaped or rectangular-shaped lateral DMOS device which overcomes the problems of field crowding caused by a high voltage drain interconnect line creating an increased...
5049953 Schottky tunnel transistor device  
A semiconductor device includes a semiconductor substrate of a first conductivity type, in which a drain region is formed in the substrate, and a gate electrode is formed on the surface of the...
5047820 Semi self-aligned high voltage P channel FET  
An improved process to fabricate a high breakdown voltage MOSFET is disclosed. The process self-aligns the channel to the source and drain and semi self-aligns the gate electrode to the channel....
5045913 Bit stack compatible input/output circuits  
In accordance with the teachings of this invention a method for positioning components of input/output circuits is provided. These components are positioned on a semiconductor substrate. The...
5034790 MOS transistor with semi-insulating field plate and surface-adjoining top layer  
A lateral MOS transistor includes a semi-insulating field plate adjacent the surface of the device, over the drift region and extending laterally from the drain electrode toward the gate and source...
5031010 Semiconductor memory device and method of manufacturing the same  
In a semiconductor memory device having a floating gate structure, the floating gate electrode is composed of 2 to 10 silicon grains. With the floating gate electrode, the insulation film, formed...
5028548 Method of manufacturing a planar semiconductor device having a guard ring structure  
A method of manufacturing a semiconductor device of the "planar" type comprising a highly doped substrate having a doping concentration c o and an epitaxial surface layer having a carrier...
5025296 Center tapped FET  
A FET structure has first and second active areas separated by an inactive area with a gate bus located thereon. Gate fingers extend from the gate bus between source and drain contacts on the...
5023678 High power MOSFET and integrated control circuit therefor for high-side switch application  
A lateral conduction high power MOSFET chip with integrated control circuits in disclosed for high-side switching applications. A first surface field reduction region disposed between drain and...
5021851 NMOS source/drain doping with both P and As  
A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so...
5019882 Germanium channel silicon MOSFET  
An alloy layer comprising germanium and silicon is grown on top of a silicon substrate. The alloy layer is kept thin enough for proper pseudomorphic, dislocation free growth. A layer of silicon is...
5017996 Semiconductor device and production method thereof  
This invention relates to a BiMOS IC, such as BiCMOS IC, and production method thereof. The present invention forms an impurity layer for preventing field concentration in a bipolar transistor by...
5012312 Semiconductor integrated circuit and a process for producing the same  
The impurity concentration in a channel stopper in contact with a second fine active area is selected to be lower than the impurity concentration in a first active area that is wider than the...
5003372 High breakdown voltage semiconductor device  
A semiconductor device having a grooved field plate(s), a grooved field limiting ring(s) or a combination of a grooved field plate(s) and grooved field limiting ring(s) is disclosed. The grooved...
5003362 Integrated circuit with high-impedance well tie  
An integrated circuit which includes a series resistor in the well tie. This resistor permits the wall to be used for clamping, without large current consumption due to the parastic bipolar device...
5001540 Thin-film transistor operable at high voltage and a method for manufacturing the same  
There are disclosed a structure and a manufacturing method of a MOS-type thin-film field effect transistor composed of a substrate having an insulating main surface, a gate electrode formed on the...
Matches 351 - 400 out of 466 < 1 2 3 4 5 6 7 8 9 10 >