Patents in Class 257/408

Matches 1 - 50 out of 844

Match	Document	Document Title
1	7635898	Methods for fabricating semiconductor devices Semiconductor devices and methods for fabricating a semiconductor devices are disclosed. A disclosed method comprises: forming a first gate electrode functioning as a flash memory; forming first...
2	7633124	Semiconductor device and method of manufacturing thereof A silicon nitride film having a thickness of 3 nm or less is formed on the surfaces of a P-well and N-well, as well as on the upper and side surfaces of a gate electrode, in which the silicon...
3	7602029	Configuration and method of manufacturing the one-time programmable (OTP) memory cells This invention discloses an one time programmable (OTP) memory. The OTP memory includes a first and a second metal oxide semiconductor (MOS) transistors connected in parallel and controlled by a...
4	7602019	Drive circuit and drain extended transistor for use therein A transistor comprises a source region of a first conductivity type and electrically communicating with a first semiconductor region. The transistor also comprises a drain region of the first...
5	7598575	Semiconductor die with reduced RF attenuation The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
6	7554156	Semiconductor device having a field effect transistor using a high dielectric constant gate insulating film and manufacturing method of the same In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high...
7	7547592	PMOS depletable drain extension made from NMOS dual depletable drain extensions In accordance with an embodiment of the invention, there is an integrated circuit device having a complementary integrated circuit structure comprising a first MOS device. The first MOS device...
8	7545006	CMOS devices with graded silicide regions A semiconductor device includes a semiconductor substrate, a gate stack overlying the semiconductor substrate, a spacer on a sidewall of the gate stack, a lightly doped source/drain (LDD) region...
9	7544996	Methods of fabricating a semiconductor device having a metal gate pattern A method of fabricating a semiconductor device having a metal gate pattern is provided in which capping layers are used to control the relative oxidation rates of portions of the metal gate pattern...
10	7541653	Mask ROM devices of semiconductor devices and method of forming the same Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a...
11	7538387	Stack SiGe for short channel improvement A semiconductor structure includes a first compound layer including an element, and a first impurity having a first impurity concentration; and a second compound layer including the element and a...
12	7535065	Thin film transistor device utilizing transistors of differing material characteristics A first insulating film is formed. Then, a gate electrode of a low voltage drive thin film transistor and a mask film for covering a region constituting a channel of a high voltage drive thin film...
13	7528445	Wing gate transistor for integrated circuits A system is provided for forming a semiconductor device. Layers of gate dielectric material, gate material, and cap material are formed on a semiconductor substrate. The cap material and a portion...
14	7528442	Semiconductor device and manufacturing method thereof In this invention, the semiconductor device is provided with a gate electrode formed on a gate insulating film in a region sectioned by an element isolation formed on a semiconductor layer of the...
15	7525165	Light emitting device and manufacturing method thereof The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions...
16	7525158	Semiconductor device having pixel electrode and peripheral circuit A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film....
17	7521767	MOS transistor in a semiconductor device Methods of forming a MOS transistor and a MOS transistor fabricated thereby are provided. The MOS transistor includes a semiconductor substrate of a first conductivity type, and an insulated gate...
18	7521768	Electric device comprising an LDMOS transistor The LDMOS transistor ( 99 ) of the invention is provided with a stepped shield structure ( 50 ) and/or with a first ( 25 ) and a second ( 26 ) drain extension region having a higher dopant...
19	7518198	Transistor and method for manufacturing the same A transistor including a semiconductor substrate defined with an active region and a device isolation region, a gate formed on the semiconductor substrate, an insulating spacers formed on...
20	7514744	Semiconductor device including carrier accumulation layers A semiconductor device includes a gate structure on a channel region of a semiconductor substrate adjacent to a source/drain region therein and a surface insulation layer directly on the...
21	7511340	Semiconductor devices having gate structures and contact pads that are lower than the gate structures Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate...
22	7498642	Profile confinement to improve transistor performance A semiconductor device having well-defined profiles is disclosed. A p-type pocket/halo region is preferably formed along a channel-side border of the heavily doped source/drain region to neutralize...
23	7495295	Semiconductor device and method for fabricating the same In a semiconductor device according to the present invention, the power source voltage Vdd 1 of a core transistor Tr 1, the power source voltage Vdd 2 of an I/O transistor Tr 2, and the power...
24	7495297	Semiconductor device and method for manufacturing the same A semiconductor device, comprising: a first transistor of a second electric conductivity type formed in a substrate including impurities of a first electric conductivity type; and a second...
25	7491988	Transistors with increased mobility in the channel zone and method of fabrication A semiconductor transistor structure with increased mobility in the channel zone and a method of its fabrication are described. A semiconductor substrate having a first dopant is formed. A...
26	7492029	Asymmetric field effect transistors (FETs) A semiconductor structure. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source...
27	7492017	Semiconductor transistor having a stressed channel A process is described for manufacturing an improved PMOS semiconductor transistor. Recesses are etched into a layer of epitaxial silicon. Source and drain films are deposited in the recesses. The...
28	7482233	Embedded non-volatile memory cell with charge-trapping sidewall spacers An IC includes both “volatile” CMOS transistors (FETs) and embedded non-volatile memory (NVM) cells, both including polysilicon gate structures, sidewall oxide layers, sidewall spacer...
29	7473976	Lateral power transistor with self-biasing electrodes A semiconductor power transistor includes a drift region of a first conductivity type and a well region of a second conductivity type in the drift region such that the well region and the drift...
30	7470956	Semiconductor device and manufacturing method thereof A semiconductor device has a semiconductor base, an anode electrode, and a cathode electrode. The semiconductor base includes a P type semiconductor substrate, an insulating film, an N − type...
31	7465978	Field effect transistor with a high breakdown voltage and method of manufacturing the same An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective...
32	7456448	Semiconductor device and method for producing the same A semiconductor device, including a first MIS-type transistor formed in a first region of a semiconductor region, the first region being of a first conductivity type, the first MIS-type transistor...
33	7446375	Quasi-vertical LDMOS device having closed cell layout A low voltage power device includes a plurality of quasi-vertical LDMOS device cells. A conductive trench sinker is formed through the epitaxial layer and adjacent a selected one of the source and...
34	7446377	Transistors and manufacturing methods thereof Transistors and manufacturing methods thereof are disclosed. An example transistor includes a semiconductor substrate divided into device isolation regions and a device active region. The example...
35	7436035	Method of fabricating a field effect transistor structure with abrupt source/drain junctions Microelectronic structures embodying the present invention include a field effect transistor (FET) having highly conductive source/drain extensions. Formation of such highly conductive source/drain...
36	7436026	Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions A semiconductor device may include a semiconductor substrate and at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may include spaced apart source and...
37	7429771	Semiconductor device having halo implanting regions A MIS-type semiconductor device includes a p-type semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film, and...
38	RE40486	Self-aligned non-volatile memory cell Disclosed is a self-aligned non-volatile memory cell including a small sidewall spacer electrically coupled and being located next to a main floating gate region. Both the small sidewall spacer and...
39	7420250	Electrostatic discharge protection device having light doped regions Provided are an electrostatic discharge (ESD) protection device and a method for making such a device. In one example, the ESD protection device includes a Zener diode region formed in a substrate...
40	7414292	Semiconductor device and its manufacturing method A semiconductor device manufacturing method includes, forming isolation region having an aspect ratio of 1 or more in a semiconductor substrate, forming a gate insulating film, forming a silicon...
41	7408234	Semiconductor device and method for manufacturing the same An object of the present invention is to provide a semiconductor device that is able to realize a low on-resistance maintaining a high drain-to-source breakdown voltage, and a method for...
42	7408233	Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are...
43	7405443	Dual gate lateral double-diffused MOSFET (LDMOS) transistor Method and apparatus for providing a lateral double-diffused MOSFET (LDMOS) transistor having a dual gate. The dual gate includes a first gate and a second gate. The first gate includes a first...
44	7405458	Asymmetric field transistors (FETs) A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the...
45	7405450	Semiconductor devices having high conductivity gate electrodes with conductive line patterns thereon Semiconductor devices that include a semiconductor substrate and a gate line are provided. The gate line is on the semiconductor substrate and includes a gate insulation pattern and a gate...
46	7402872	Method for forming an integrated circuit A method is described for manufacturing an n-MOS semiconductor transistor. Recesses are formed in a semiconductor substrate adjacent a gate electrode structure. Silicon is embedded in the recesses...
47	7400018	End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping A method for incorporating carbon into a wafer at the interstitial a-c silicon interface of the halo doping profile is achieved. A bulk silicon substrate is provided. A carbon-doped silicon layer...
48	7388264	Semiconductor device having LDD-type source/drain regions and fabrication method thereof A semiconductor device having LDD-type source/drain regions and a method of fabricating the same are provided. The semiconductor device includes at least a pair of gate patterns disposed on a...
49	7388228	Display device and method of manufacturing the same Thin film transistors for a display device each include a semiconductor layer made of polysilicon having a channel region, drain and source regions at both sides of the channel region and doped...
50	7388265	Thin film transistor and fabrication method thereof A thin film transistor (TFT) with a self-aligned lightly-doped region and a fabrication method thereof. An active layer has a channel region, a first doped region and a second doped region, in...

Matches 1 - 50 out of 844

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