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8183553 Resistive switching memory element including doped silicon electrode  
A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a...
8178861 Semiconductor device  
A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer...
8173987 Integrated circuit 3D phase change memory array and manufacturing method  
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements...
8173486 Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same  
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element...
8173990 Memory array with a selector connected to multiple resistive cells  
An array includes a transistor comprising a first terminal, a second terminal and a third terminal; a first contact plug connected to the first terminal of the transistor; a second contact plug...
8173989 Resistive random access memory device and methods of manufacturing and operating the same  
Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first...
8168479 Resistance variable memory device and method of fabricating the same  
A method of fabricating a resistance variable device includes forming selection devices on a substrate, forming a conductive layer on the selection devices, patterning the conductive layer in a...
8164079 Phase change memory  
A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern...
8164949 Reducing drift in chalcogenide devices  
Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with...
8158965 Heating center PCRAM structure and methods for making  
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change...
8158966 Phase change memory device having protective layer and method for manufacturing the same  
A phase change memory device includes a plurality of phase change structures, each with a phase change material layer, disposed on a semiconductor substrate, a first protective layer formed to...
8154004 Hybrid MRAM array structure and operation  
This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and...
8154002 Nanoscale wire-based data storage  
The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode...
8154006 Controlling the circuitry and memory array relative height in a phase change memory feol process flow  
A CMOS logic portion embedded with a PCM portion is recessed by a gate structure height as measured by a thickness of a gate oxide and a polysilicon gate to provide planarity of the CMOS logic...
8154003 Resistive non-volatile memory device  
The present disclosure provides a memory cell. The memory cell includes a first electrode, a variable resistive material layer coupled to the first electrode, a metal oxide layer coupled the...
8148708 Resistive memory device and method of fabricating the same  
A resistive memory device includes a first conductive line on a substrate, a vertical selection diode comprising a nanowire or a nanotube and being arranged over the first conductive line, a...
8148710 Phase-change memory device using a variable resistance structure  
A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second...
8148709 Magnetic device with integrated magneto-resistive stack  
This magnetic device integrates a magneto-resistive stack, the stack comprising at least two layers made out of a ferromagnetic material, separated from each other by a layer of non-magnetic...
8143609 Three-terminal cascade switch for controlling static power consumption in integrated circuits  
A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM...
8143611 Phase-change memory element, phase-change memory cell, vacuum processing apparatus, and phase-change memory element manufacturing method  
A phase-change memory element includes a perovskite layer formed by a material having a perovskite structure, and a phase-change recording material layer which is formed on the perovskite layer,...
8143146 Method for manufacturing a nonvolatile storage device  
A method for manufacturing a nonvolatile storage device with a plurality of unit memory layers stacked therein is provided. Each of the unit memory layers includes: a first interconnect extending...
8143610 Semiconductor phase-change memory device  
A semiconductor phase-change memory device comprises a data line disposed on a semiconductor substrate and a data storage structure disposed under the data line and having a concave portion...
8138489 Non-volatile semiconductor storage device and method of manufacturing the same  
A non-volatile semiconductor storage device includes a plurality of memory element groups, each of the memory element groups having a plurality of memory elements, each of the memory elements...
8138490 Variable resistance non-volatile memory cells and methods of fabricating same  
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper...
8134860 Shunted phase change memory  
By using a resistive film as a shunt, the snapback exhibited when transitioning from the reset state or amorphous phase of a phase change material, may be reduced or avoided. The resistive film may...
8134140 Programmable metallization cell structure including an integrated diode, device including the structure, and method of forming same  
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable...
8133757 Method of manufacturing a phase changeable memory unit having an enhanced structure to reduce a reset current  
A phase changeable memory unit includes a lower electrode, an insulating interlayer structure having an opening, a phase changeable material layer and an upper electrode. The lower electrode is...
8134139 Programmable metallization cell with ion buffer layer  
A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting...
8129709 Nonvolatile memory device  
A nonvolatile memory device (21) is provided with a semiconductor substrate, a plurality of active regions (3) formed on the semiconductor substrate and extending in a band, a plurality of select...
8129706 Structures and methods of a bistable resistive random access memory  
Structures and methods to form a bistable resistive random access memory for reducing the amount of heat dissipation from electrodes by confining a heating region in the memory cell device are...
8129707 Semiconductor integrated circuit device  
With a high-speed nonvolatile phase change memory, reliability in respect of the number of refresh times is enhanced. In a memory cell forming area of a phase change memory using a MISFET as a...
8129705 Nonvolatile memory device and method of manufacturing the same  
Provided is a nonvolatile memory device including a phase-change memory configured with cross-point memory cells in which memory elements formed of a phase-change material and selection elements...
8129218 Self-aligned, planar phase change memory elements and devices, systems employing the same and method of forming the same  
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material...
8124954 Conductive bridging random access memory device and method of manufacturing the same  
A conductive bridging random access memory (CBRAM) device and a method of manufacturing the same are provided. The CBRAM device includes a first electrode layer, a dielectric layer, a solid...
8124968 Non-volatile memory device  
Provided are a non-volatile memory device which can be extended in a stack structure and thus can be highly integrated, and a method of manufacturing the non-volatile memory device. The...
8124950 Concentric phase change memory element  
A memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase...
8124955 Memory devices and methods of forming the same  
Memory devices having a plurality of memory cells, with each memory cell including a phase change material having a laterally constricted portion thereof. The laterally constricted portions of...
8124956 Phase change memory devices  
A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material....
8124952 Programmable resistive memory cell with filament placement structure  
Programmable metallization memory cells having a first metal contact and a second metal contact with an ion conductor solid electrolyte material between the metal contacts. The first metal contact...
8125021 Non-volatile memory devices including variable resistance material  
A non-volatile memory device includes a first oxide layer, a second oxide layer and a buffer layer formed on a lower electrode. An upper electrode is formed on the buffer layer. In one example, the...
8120003 Nanowire magnetic random access memory  
An integrated array of non volatile magnetic memory devices, each having a first magnetic layer (10) with a fixed magnetization direction; a free magnetic layer (20) with a changeable magnetization...
8120007 Phase-change memory device, phase-change channel transistor and memory cell array  
A phase-change channel transistor includes a first electrode; a second electrode; a memory layer provided between the first and second electrodes; and a third electrode provided for the memory...
8120006 Non-volatile memory device  
Provided is a non-volatile memory device having a stacked structure that is easily highly integrated and a method of economically fabricating the non-volatile memory device. The non-volatile memory...
8120005 Phase change memory devices and their methods of fabrication  
In an embodiment, a phase change memory device includes a semiconductor substrate of a first conductivity type and a first interlayer insulating layer disposed on the semiconductor substrate. A...
8120951 Memory devices, memory device constructions, constructions, memory device forming methods, current conducting devices, and memory cell programming methods  
Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a...
8120004 Storage node, phase change memory device and methods of operating and fabricating the same  
A storage node, a phase change memory device, and methods of operating and fabricating the same are provided. The storage node may include a lower electrode, a phase change layer on the lower...
8114468 Methods of forming a non-volatile resistive oxide memory array  
A method of forming a non-volatile resistive oxide memory array includes forming a plurality of one of conductive word lines or conductive bit lines over a substrate. Metal oxide-comprising...
8115188 Memory element and display device  
Disclosed herein is a memory element, including a parallel combination of a thin film transistor; and a resistance change element, the thin film transistor including a semiconductor thin film in...
8115586 Variable resistance element, and its manufacturing method  
Provided are a variable resistive element having a configuration that the area of an electrically contributing region in a variable resistor body is smaller than the area defined by an upper...
8115187 Triodes using nanofabric articles and methods of making the same  
Vacuum microelectronic devices with carbon nanotube films, layers, ribbons and fabrics are provided. The present invention discloses microelectronic vacuum devices including triode structures that...
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