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7619915 Resistive random access memory device  
Provided is a resistive random access memory (RRAM) device having a switching device and a storage node connected to the switching device, the storage node including a first electrode formed of a...
7619311 Memory cell device with coplanar electrode surface and method  
A memory device described herein includes a bit line having a top surface and a plurality of vias. The device includes a plurality of first electrodes each having top surfaces coplanar with the top...
7615771 Memory array having memory cells formed from metallic material  
Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality...
7615770 Integrated circuit having an insulated memory  
A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The...
7615769 Nonvolatile memory device and fabrication method thereof  
A nonvolatile memory device and a method for its fabrication may ensure uniform operating characteristics of ReRAM. The ReRam may include a laminated resistance layer that determines phase of ReRAM...
7615401 Methods of fabricating multi-layer phase-changeable memory devices  
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second...
7612359 Microelectronic devices using sacrificial layers and structures fabricated by same  
A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are...
7612358 Nonvolatile nanochannel memory device using mesoporous material  
A nonvolatile nanochannel memory device using a mesoporous material. Specifically, a memory device is composed of a mesoporous material that is able to form nanochannels, in which a memory layer...
7608851 Switch array circuit and system using programmable via structures with phase change materials  
A programmable via structure that includes at least two phase change material vias each directly contacting a heating element, the via structure further including a first terminal in contact with a...
7608850 Phase change memory device in which a distance between a lower electrode and a ground line is increased to secure the sensing margin of a cell and method for manufacturing the same  
A phase change memory device includes a semiconductor substrate having active regions and an isolation structure; gate lines extending in a direction perpendicular to the active regions; a source...
7608849 Non-volatile switching element, method for manufacturing the same, and integrated circuit having non-volatile switching elements  
The present invention provides a non-volatile switching element having a novel structure that operates at a high speed and enables high integration, and an integrated circuit that includes such...
7602633 Non-volatile memory device, method of manufacturing the same, and method of operating the same  
A non-volatile memory device includes a substrate, resistance patterns, a gate dielectric layer, a gate electrode pattern, a first impurity region and a second impurity region. The substrate has...
7598113 Phase change memory device and fabricating method therefor  
A phase change memory device and fabricating method are provided. A disk-shaped phase change layer is buried within the insulating material. A center via and ring via are formed by a lithography....
7592649 Memory word lines with interlaced metal layers  
A memory device with improved word line structure is disclosed. The memory device includes a plurality of polysilicon strips substantially parallel to each other on the substrate, the plurality of...
7592617 Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method  
A horizontal electrode having a small cross-section makes electrical contact with a chalcogenide memory element. The dimensions of the cross-section are controlled by conventional deposit/etch...
7589344 Semiconductor device and method of producing the same  
In a semiconductor device, a phase change layer is formed as a side wall and is therefore reduced in volume. Even if the number of times of rewriting is small, the phase change layer is entirely...
7589343 Memory and access device and method therefor  
Briefly, in accordance with an embodiment of the invention, a memory and a method to manufacture the memory is provided. The memory may include a phase change material over a substrate. The memory...
7589342 Phase change memory device having carbon nano tube lower electrode material and method of manufacturing the same  
Disclosed is a phase change memory device including: a semiconductor substrate formed with a first insulating interlayer having a first contact hole; a contact plug formed in such a manner so as to...
7586777 Resistance variable memory with temperature tolerant materials  
A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb 2 Se 3 , and a metal-chalcogenide layer and methods of...
7582890 Magnetic tunnel junction structures having bended tips at both ends thereof, magnetic random access memory cells employing the same and photomasks used in formation thereof  
Provided are magnetic tunnel junction structures having bended tips at both ends thereof, magnetic RAM cells employing the same and photo masks used in formation thereof. The magnetic tunnel...
7582889 Electrically rewritable non-volatile memory element and method of manufacturing the same  
A non-volatile memory element includes a lower electrode, an upper electrode, a recording layer arranged between the lower electrode and the upper electrode and containing a phase change material,...
7582546 Device with damaged breakdown layer  
A device utilizing a breakdown layer in combination with a programmable resistance material, a phase-change material or a threshold switching material. The breakdown layer having damage.
7580276 Nonvolatile memory element  
A nonvolatile memory element in which Rb 1-y Mb y MnO 3 having higher insulation properties than Ra 1-x Ma x MnO 3 is inserted between the Ra 1-x Ma x MnO 3 and a metal having a shallow work...
7579614 Magnetic random access memory  
A magnetic random access memory includes a semiconductor substrate having a projection projecting from a substrate surface, first and second gate electrodes and a first source diffusion layer...
7579612 Resistive memory device having enhanced resist ratio and method of manufacturing same  
Disclosed herein are new resistive memory devices having one or more buffers layer surrounding a dielectric layer. By inserting one or more buffer layers around the dielectric layer of the device,...
7577024 Streaming mode programming in phase change memories  
A streaming programming mode may be implemented on user command in a phase change memory. In the streaming programming mode, accelerated programming may be achieved by ramping up to a voltage that...
7576350 Programmable resistance memory element with multi-regioned contact  
An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has...
7573058 Phase change materials, phase change random access memories having the same and methods of operating phase change random access memories  
A phase change memory device includes a switch and a storage node connected to the switch. The storage node includes a first electrode, a phase change layer and a second electrode. The phase change...
7572666 Reduced area intersection between electrode and programming element  
A method comprising forming a first dielectric layer over an electrode formed to a first contact point on a substrate, the electrode having a contact area; patterning the first dielectric layer...
7569846 Phase-change memory device including nanowires and method of manufacturing the same  
A phase-change random access memory (PRAM) device including a plurality of nanowires and a method of manufacturing the same include: a lower structure including a plurality of contact plugs; the...
7569844 Memory cell sidewall contacting side electrode  
A memory cell includes a memory cell layer over a memory cell access layer. The memory cell access layer comprises a bottom electrode. The memory cell layer comprises a dielectric layer and a side...
7566895 Phase change memory device and method for fabricating the same  
A phase change memory device is provided. The phase change memory device includes a substrate comprising a stacked structure. The stacked structure comprises a plurality of insulating layers and...
7560724 Storage device with reversible resistance change elements  
It is intended to provide a storage element having an arrangement which becomes able to be manufactured easily with high density. A storage element includes resistance changing elements 10 having...
7560722 Optimized solid electrolyte for programmable metallization cell devices and structures  
A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable...
7551473 Programmable resistive memory with diode structure  
Programmable resistive memory cells are accessed by semiconductor diode structures. Manufacturing methods and integrated circuits for programmable resistive elements with such diode structures are...
7550756 Semiconductor memory  
In a semiconductor memory comprising a matrix of memory cells each composed of one transistor and one chalcogenide layer as a memory element, no chalcogenide layer is disposed at a joint between an...
7550380 Electroless plating of metal caps for chalcogenide-based memory devices  
A method of forming a metal cap over a conductive interconnect in a chalcogenide-based memory device is provided and includes, forming a layer of a first conductive material over a substrate,...
7547906 Multi-functional chalcogenide electronic devices having gain  
Multi-functional electronic switching and current control device comprising a chalcogenide material. The devices include a load terminal, a reference terminal and a control terminal. Application of...
7545668 Mushroom phase change memory having a multilayer electrode  
An integrated circuit includes a first electrode including at least two electrode material layers and a resistivity changing material including a first portion and a second portion. The first...
7541609 Phase change memory cell having a sidewall contact  
A memory cell includes a first electrode and a second electrode forming an opening. The opening is defined by a first sidewall, a second sidewall, and a surface extending between the first sidewall...
7541608 Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells  
Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two...
7541607 Electrically rewritable non-volatile memory element and method of manufacturing the same  
A non-volatile memory element includes a bottom electrode 12 , a bit line 14 provided on the bottom electrode 12 , and a recording layer 15 containing phase change material connected between...
7538338 Memory using variable tunnel barrier widths  
A memory using a tunnel barrier is disclosed. A memory element includes a tunneling barrier and two conductive materials. The conductive material typically has mobile ions that either move towards...
7531825 Method for forming self-aligned thermal isolation cell for a variable resistance memory array  
A non-volatile method with a self-aligned RRAM element. The method includes a lower electrode element, generally planar in form, having an inner contact surface. At the top of the device is a upper...
7531824 High value inductor with conductor surrounded by high permeability polymer formed on a semiconductor substrate  
An apparatus and method for fabricating high value inductors embedded on semiconductor integrated circuit. The apparatus and method involve forming a conductor on the semiconductor substrate. Once...
7531378 Forming an intermediate electrode between an ovonic threshold switch and a chalcogenide memory element  
An intermediate electrode between an ovonic threshold switch and a memory element may be formed in the same pore with the memory element. This may have many advantages including, in some...
7529123 Method of operating a multi-terminal electronic device  
A method of operating a multi-terminal electronic device. The device includes an active material in electrical communication with three or more electrical terminals. The active material is able to...
7527985 Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas  
A method for manufacturing a memory device comprises patterning a dielectric layer and a conductive layer to align near the center of the top surface of a first contact drain plug and near the...
7525117 Chalcogenide devices and materials having reduced germanium or telluruim content  
A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid...
7521706 Phase change memory devices with contact surface area to a phase changeable material defined by a sidewall of an electrode hole and methods of forming the same  
Phase change memory devices and methods of making phase changeable memory devices including a heating electrode disposed on a substrate are provided. The heating electrode includes an electrode...
Matches 1 - 50 out of 306 1 2 3 4 5 6 7 >