Patents in Class 257/396

Matches 1 - 50 out of 229

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Match	Document	Document Title
1	8164138	Recessed channel transistor A recessed channel transistor includes an isolation layer provided in a semiconductor substrate to define an active region. A trench is provided in the semiconductor substrate to extend across the...
2	8154087	Multi-component strain-inducing semiconductor regions A multi-component strain-inducing semiconductor region is described. In an embodiment, formation of such a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results...
3	8115254	Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same A stack pad layers including a first pad oxide layer, a pad nitride layer, and a second pad oxide layer are formed on a semiconductor-on-insulator (SOI) substrate. A deep trench extending below a...
4	8110879	Controlling lateral distribution of air gaps in interconnects Properties of a hard mask liner are used against the diffusion of a removal agent to prevent air cavity formation in specific areas of an interconnect stack. According to one embodiment, there is...
5	8088660	Method for producing a plug in a semiconductor body A method for producing an electrode in a semiconductor layer includes providing a substrate with a first surface and a second surface, forming a first trench having sidewalls and extending into the...
6	8084832	Semiconductor device Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor. In embodiments, the method may include a first exposure step of performing an exposure process for...
7	8084833	Semiconductor device Provided is a LOCOS offset MOS field-effect transistor in which a first lightly-doped N-type drain offset region with a LOCOS oxide film and a second lightly-doped N-type drain offset region...
8	8084831	Semiconductor device A semiconductor device according to one embodiment includes: an n-type transistor comprising a first gate electrode formed on a semiconductor substrate via a first gate insulating film, a first...
9	8058177	Winged vias to increase overlay margin Winged via structures to increase overlay margin are generally described. In one example, a method comprises depositing a sacrificial layer to an interlayer dielectric, the interlayer dielectric...
10	8049286	Semiconductor device and semiconductor device manufacturing method In the present invention, there is provided a semiconductor device including: element isolation regions formed in a state of being buried in a semiconductor substrate such that an element formation...
11	8004048	Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same A semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage is presented. The semiconductor device includes a semiconductor substrate, a buried gate, and...
12	7989362	Hafnium lanthanide oxynitride films Electronic apparatus and methods of forming the electronic apparatus include a hafnium lanthanide oxynitride film on a substrate for use in a variety of electronic systems. The hafnium lanthanide...
13	7977233	Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium A semiconductor device has first wiring layers 30 and a plurality of dummy wiring layers 32 that are provided on the same level as the first wiring layers 30. The semiconductor device defines a row...
14	7968951	Interconnecting bit lines in memory devices for multiplexing An embodiment of a memory device has a plurality of conductive plugs formed on a semiconductor substrate and a pair of successively adjacent first and second bit lines overlying and in contact with...
15	7968950	Semiconductor device having improved gate electrode placement and decreased area design A semiconductor device includes a gate electrode having ends that overlap isolation regions, wherein the gate electrode is located over an active region located within a semiconductor substrate. A...
16	7964910	Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Disclosed is a transistor that incorporates epitaxially deposited source/drain semiconductor films and a method for forming the transistor. A crystallographic etch is used to form recesses between...
17	7960798	Structure and method to form multilayer embedded stressors A multilayer embedded stressor having a graded dopant profile for use in a semiconductor structure for inducing strain on a device channel region is provided. The inventive multilayer stressor is...
18	7948038	Non-volatile semiconductor memory device and process of manufacturing the same In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost...
19	7948028	DRAM device having a gate dielectric layer with multiple thicknesses A transistor device employed in a support circuit of a DRAM includes a semiconductor substrate having thereon a gate trench, a recessed gate embedded in the gate trench, a source doping region...
20	7943992	Metal gate structures with recessed channel Methods and associated structures of forming a microelectronic device are described. Those structures may comprise a transistor comprising a metal gate disposed on a gate dielectric that is...
21	7928504	Semiconductor memory device and method for manufacturing the same A semiconductor memory device and a method for manufacturing the same are disclosed, which reduce parasitic capacitance generated between a storage node contact and a bit line of a high-integration...
22	7902613	Self-alignment for semiconductor patterns Various systems and methods related to semiconductor devices having a plurality of layers and having a first conductive trace on a first layer electrically connected to a second conductive trace on...
23	7898024	Semiconductor device and method for manufacturing the same In a MIS-type semiconductor device having a trench gate structure, a withstand voltage is ensured without changing the thickness of a drift layer and on-resistance can be reduced without applying a...
24	7838361	Method for fabricating recess gate in semiconductor device A method for fabricating a recess gate in a semiconductor device includes etching a silicon substrate to form a trench that defines an active region, forming a device isolation layer that gap-fills...
25	7838929	Semiconductor devices having a recessed active edge A semiconductor device having a recessed active edge is provided. The semiconductor devices include an isolation layer disposed in a substrate to define an active region. A gate electrode is...
26	7824984	Method of fabricating a trench DMOS (double diffused MOS) transistor Disclosed is a method of fabricating a semiconductor device. The method can include forming a gate material layer on an inner surface of a trench which extends into a part of a semiconductor...
27	7816758	Integrated circuit having laterally dielectrically isolated active regions above an electrically contacted buried material, and method for producing the same An integrated circuit is disclosed that includes a first layer made of active semiconductor material and extending along a first side of a buried layer, and trench structures, which cut through the...
28	7808055	Methods and apparatus for semiconductor memory devices manufacturable using bulk CMOS process manufacturing The present invention discloses semiconductor devices that can be manufactured utilizing standard process of manufacturing and that can hold information. In accordance with a presently preferred...
29	7804140	Field effect transistor with reduced shallow trench isolation induced leakage current Edges of source and drain regions along the direction of a channel of a field effect transistor are formed within an active area offset from the boundary between the active area and a shallow...
30	7804139	Device having conductive material disposed in a cavity formed in an isolation oxide disposed in a trench Devices, such as transistors, having vertical junction edges. More specifically, shallow trenches are formed in a substrate and filled with an isolation oxide. Cavities are formed in the isolation...
31	7795670	Semiconductor device and method for fabricating the same The semiconductor device includes an active region, a recess channel region, a storage node junction region, a gate insulating film, and a gate electrode. The active region is defined by a device...
32	7777294	Semiconductor device including a high-breakdown voltage MOS transistor On a semiconductor substrate, a well is formed. In the well, one MOS transistor including a gate electrode, a source region, a source field limiting layer and a source/drain region, and another MOS...
33	7772672	Semiconductor constructions The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom portions and upper wide portions over...
34	7772646	Method of manufacturing a semiconductor device and such a semiconductor device There is a method of manufacturing a semiconductor device with a semiconductor body comprising a semiconductor substrate and a semiconductor region which are separated from each other with an...
35	7768111	Card adapter for use with a storage apparatus A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of...
36	7736991	Method of forming isolation layer of semiconductor device A method of forming an isolation layer of a semiconductor device includes forming first trenches in an isolation region of a semiconductor substrate. A spacer is formed on sidewalls of each of the...
37	7732873	Non-volatile semiconductor memory device and process of manufacturing the same In device isolation trenches, a first device-isolation insulator film is formed to have recesses thereon and a second device-isolation insulator film is formed in the recesses. The uppermost...
38	7728380	Semiconductor device Embodiments relate to a semiconductor device. In embodiments, a semiconductor device may include a semiconductor substrate having isolation layers and a well region, a gate electrode formed within...
39	7709905	Dual damascene wiring and method A structure and method of fabricating a dual damascene interconnect structure, the structure including a dual damascene wire in a dielectric layer, the dual damascene wires extending a distance...
40	7709906	Semiconductor device and method of fabricating the same A semiconductor device includes a gate insulation film provided on a semiconductor substrate, a gate electrode provided on the gate insulation film, a pair of first diffusion layers, a pair of...
41	7705407	High voltage semicondutor transistor device having small size and long electron flow path Embodiments relate to a high voltage semiconductor device. The device includes a substrate having impurities of a first conductivity and having a first surface and a second surface, a gate...
42	7687371	Method of forming isolation structure of semiconductor device for preventing excessive loss during recess gate formation An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined...
43	7659607	Accessible electronic storage apparatus for use with support frame A storage apparatus 10 is disclosed, that comprises a wiring substrate 11 having a first surface and a second surface, a flat type external connection terminal 12a disposed on the first surface of...
44	7655976	Field effect transistors having protruded active regions and methods of fabricating such transistors Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which...
45	7655522	Metal oxide semiconductor (MOS) transistor having a recessed gate electrode and methods of fabricating the same A metal oxide semiconductor (MOS) includes an isolation layer disposed in a semiconductor substrate to define an active region. A source region and a drain region are disposed on both sides of the...
46	7652331	Semiconductor device and method for fabricating the same A semiconductor device includes a device isolation structure formed on a semiconductor substrate to define an active region. A first Si-based epitaxial pattern is formed over the active region...
47	7649233	High performance transistor with a highly stressed channel A MOS transistor having a highly stressed channel region and a method for forming the same are provided. The method includes forming a first semiconductor plate over a semiconductor substrate,...
48	7648878	Method for fabricating semiconductor device with recess gate A pad oxide layer is formed on a substrate. A pad nitride layer is formed on the pad oxide layer. The pad nitride layer and the pad oxide layer are patterned. Predetermined portions of the...
49	7626235	NAND nonvolatile semiconductor memory device and method of manufacturing NAND nonvolatile semiconductor memory device A NAND nonvolatile semiconductor memory device that has a memory cell array region and a selection gate region, has a semiconductor layer; a gate insulating film disposed on said semiconductor...
50	7601993	Semiconductor device having ohmic recessed electrode The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing...

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