Patents in Class 257/384

Matches 1 - 50 out of 412

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Match	Document	Document Title
1	7633127	Silicide gate transistors and method of manufacture A method in which a gate and raised source/drain (S/D) regions are fully silicided in separate steps to avoid degrading the resistance or junction leakage is described. A gate dielectric layer,...
2	7629655	Semiconductor device with multiple silicide regions A system and method for forming a semiconductor device with a reduced source/drain extension parasitic resistance is provided. An embodiment comprises implanting two metals (such as ytterbium and...
3	7615828	CMOS devices adapted to prevent latchup and methods of manufacturing the same In a first aspect, a first apparatus is provided. The first apparatus is a semiconductor device on a substrate that includes (1) a first metal-oxide-semiconductor field-effect transistor (MOSFET);...
4	7615829	Elevated source and drain elements for strained-channel heterojuntion field-effect transistors A semiconductor structure having a surface layer disposed over a substrate, the surface layer including strained silicon. A contact layer is disposed over a portion of the surface layer, the...
5	7608898	One transistor DRAM cell structure A one-transistor dynamic random access memory (DRAM) cell includes a transistor which has a first source/drain region, a second source/drain region, a body region between the first and second...
6	7592669	Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channel With the objective of suppressing or preventing a kink effect in the operation of a semiconductor device having a high breakdown voltage field effect transistor, n + type semiconductor regions,...
7	7560351	Integrated circuit arrangement with low-resistance contacts and method for production thereof An integrated circuit arrangement and fabrication method is presented. The integrated circuit arrangement contains a semiconductor and a metal electrode. The contact area between a semiconductor...
8	7550808	Fully siliciding regions to improve performance Structures and related methods including fully silicided regions are disclosed. In one embodiment, a structure includes a substrate; a partially silicided region located in an active region of an...
9	7541653	Mask ROM devices of semiconductor devices and method of forming the same Disclosed are a mask ROM device and a method of forming the same. This device includes a plurality of cells. At least one among the plurality of cells is programmed. The programmed cell includes a...
10	7528450	Semiconductor device having NMOSFET and PMOSFET and manufacturing method therefor A element isolation insulating film is formed around the device regions in the silicon substrate. The device regions are formed an n-type diffusion layer region, a p-type diffusion layer region, a...
11	7514714	Thin film power MOS transistor, apparatus, and method A thin film power transistor includes a plurality of first doped regions over a substrate and a second doped region forming a body. At least a portion of the body is disposed between the plurality...
12	7511350	Nickel alloy silicide including indium and a method of manufacture therefor The invention provides a semiconductor device, a method of manufacture therefore and a method for manufacturing an integrated circuit including the same. The semiconductor device, among other...
13	7504698	Semiconductor device and manufacturing method thereof A semiconductor device and a manufacturing method thereof that can prevent mutual diffusion of impurity in a silicide layer and can decrease sheet resistance of an N-type polymetal gate electrode...
14	7498641	Partial replacement silicide gate A method of forming fully silicide gates having uniform gate silicide thickness is presented. A gate dielectric is formed over a substrate. A silicon-containing layer is formed over the gate...
15	7498640	Self-aligned silicide process for silicon sidewall source and drain contacts and structure formed thereby A method (and structure formed thereby) of forming a metal silicide contact on a non-planar silicon containing region having controlled consumption of the silicon containing region, includes...
16	7495293	Semiconductor device and method for manufacturing the same A semiconductor device includes a silicon region including Si, and a silicide film provided on the silicon region, the silicide film comprising a compound of Si with Ni, Co, Pd, or Pt and including...
17	7479682	Structure of a field effect transistor having metallic silicide and manufacturing method thereof A field effect transistor having metallic silicide layers is formed in a semiconductor layer on an insulating layer of an SOI substrate. The metallic silicide layers are composed of refractory...
18	7476973	Method of manufacturing a semiconductor device having a silicidation blocking layer A silicidation blocking layer (SBL) pattern is formed on a substrate including an active region and a field region. The SBL pattern covers the field region and exposes the active region. A silicide...
19	7476943	Semiconductor device having diffusion layers as bit lines and method for manufacturing the same A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a...
20	7465996	Semiconductor device and method for fabricating the same A semiconductor device includes: a semiconductor substrate divided into a first region and a second region; a first MIS transistor formed in the first region of the semiconductor substrate and...
21	7453120	Semiconductor structure A method for fabricating a semiconductor structure is described. A substrate is provided, having thereon a gate structure and a spacer on the sidewall of the gate structure and having therein an...
22	7446381	Semiconductor memory device and method for fabricating the same A semiconductor memory device has a memory region which is formed on a semiconductor substrate and in which a plurality of memory cells each including a memory transistor are arranged as a matrix...
23	7446379	Transistor with dopant-bearing metal in source and drain A transistor and method of manufacturing thereof. A gate dielectric and gate are formed over a workpiece, and the source and drain regions of a transistor are recessed. The recesses are filled with...
24	7439593	Semiconductor device having silicide formed with blocking insulation layer Some embodiments include an isolation layer defining an active region of a substrate, a gate pattern formed on the active region, and source/drain regions formed in the active region. Sidewall...
25	7439596	Transistors for semiconductor device and methods of fabricating the same The present invention discloses a transistor for a semiconductor device capable of preventing the generation of a depletion capacitance in a gate pattern due to the diffusion of impurity ions. The...
26	7429770	Semiconductor device and manufacturing method thereof A technique capable of reducing threshold voltage and reducing high-temperature heat treatment after forming a gate electrode is provided. An n-type MIS transistor or a p-type MIS transistor is...
27	7427796	Semiconductor device and method of manufacturing a semiconductor device A semiconductor device according to an embodiment of the present invention comprises a first transistor including: a first source layer and a first drain layer both formed in one surface of a...
28	7411258	Cobalt disilicide structure A structure relating to removal of an oxide of titanium generated as a byproduct of a process that forms cobalt disilicide within an insulated-gate field effect transistor (FET). The structure may...
29	7405449	Semiconductor device and method of manufacturing the same A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor...
30	7391089	Semiconductor device and method of manufacturing the same A semiconductor device which includes a field effect transistor having a gate electrode on the upper side of a semiconductor substrate, with a gate insulation film therebetween, wherein at least...
31	7385260	Semiconductor device having silicide thin film and method of forming the same The present invention provides a semiconductor device having a silicide thin film and method of forming the same. A semiconductor device comprises a gate insulation layer formed on an active region...
32	7372108	Semiconductor device and manufacturing method thereof The present invention discloses a semiconductor device and a manufacturing method thereof which improves its characteristics even though it is miniaturized. According to one aspect of the present...
33	7365404	Semiconductor device having silicide reaction blocking region A semiconductor device has a silicon substrate, an n-type well region formed in the silicon substrate, first and second source/drain regions constructed of a p-type diffusion layer formed on the...
34	7361959	CMOS circuits including a passive element having a low end resistance The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits, as well as methods for forming such CMOS circuits. More specifically, the present invention relates to CMOS...
35	7358574	Semiconductor device having silicide-blocking layer and fabrication method thereof A semiconductor device having a silicide-blocking layer is provided. The device includes a field oxide layer defining an active region, source/drain regions in the active region of a substrate, a...
36	7348233	Methods for fabricating a CMOS device including silicide contacts Methods are provided for fabricating a CMOS device having a silicon substrate including a first N-type region and a second P-type region. The method includes the steps of forming a first gate...
37	7326648	Semiconductor device and fabrication process of forming silicide layer on a polysilicon pattern by reducing thickness of metal layer before forming silicide layer on the polysilicon pattern A semiconductor device includes a substrate having first and second device regions separated from each other by a device isolation region, a first field effect transistor having a first polysilicon...
38	7317239	Method for manufacturing a resistor A method of manufacturing a resistor is provided. At first, a semiconductor layer including at least a high resistance region and a low resistance region is formed on a substrate. Following that, a...
39	7314789	Structure and method to generate local mechanical gate stress for MOSFET channel mobility modification A semiconductor structure and method that is capable of generating a local mechanical gate stress for channel mobility modification are provided. The semiconductor structure includes at least one...
40	7307322	Ultra-uniform silicide system in integrated circuit technology A structure of an integrated circuit is provided. A gate dielectric is formed on a semiconductor substrate, and a gate is formed over a gate dielectric on the semiconductor substrate. Source/drain...
41	7298011	Semiconductor device with recessed L-shaped spacer and method of fabricating the same A semiconductor device with a recessed L-shaped spacer and a method for fabricating the same. A recessed L-shaped spacer includes a vertical portion and a horizontal portion. The vertical portion...
42	7298012	Shallow junction semiconductor An integrated circuit with a semiconductor substrate is provided. A gate dielectric is on the semiconductor substrate, and a gate is on the gate dielectric. A silicide layer is on the semiconductor...
43	7294935	Integrated circuits protected against reverse engineering and method for fabricating the same using an apparent metal contact line terminating on field oxide Semiconducting devices, including integrated circuits, protected from reverse engineering comprising metal traces leading to field oxide. Metallization usually leads to the gate, source or drain...
44	7294890	Fully salicided (FUSA) MOSFET structure A method is described to form a MOSFET with a fully silicided gate electrode and fully silicided, raised S/D elements that are nearly coplanar to allow a wider process margin when forming contacts...
45	7271455	Formation of fully silicided metal gate using dual self-aligned silicide process An advanced gate structure that includes a fully silicided metal gate and silicided source and drain regions in which the fully silicided metal gate has a thickness that is greater than the...
46	7265400	Semiconductor device including field-effect transistor using salicide (self-aligned silicide) structure and method of fabricating the same An element isolation region for electrically isolating an element region where an element is to be formed is formed in a semiconductor substrate. A gate insulating film is formed on the...
47	7265425	Semiconductor device employing an extension spacer and a method of forming the same A semiconductor device formed on a semiconductor substrate and a method of forming the same. In one embodiment, the semiconductor device includes a gate over the semiconductor substrate and a...
48	7259432	Semiconductor device for reducing parasitic capacitance produced in the vicinity of a transistor located within the semiconductor device A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed...
49	7256498	Resistance-reduced semiconductor device and methods for fabricating the same Semiconductor devices and methods for fabricating the same. The semiconductor device includes a resistance-reduced transistor with metallized bilayer overlying source/drain regions and gate...
50	7253481	High performance MOS device with graded silicide A semiconductor device suffering fewer current crowding effects and a method of forming the same are provided. The semiconductor device includes a substrate, a gate over the substrate, a gate...

Matches 1 - 50 out of 412

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