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7605431 Electrostatic discharge protection apparatus for semiconductor devices  
The present invention provides several embodiments with layout patterns for ESD protection. An apparatus with a layout pattern may be configured to protect I/O pads or the power rail. The layout...
7569894 Semiconductor device with NMOS transistors arranged continuously  
A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS...
7560782 Transistor structure with high input impedance and high current capability  
An integrated transistor device is formed in a chip of semiconductor material having an electrical-insulation region delimiting an active area accommodating a bipolar transistor of vertical type...
7521757 Semiconductor device with back surface electrode including a stress relaxation film  
A semiconductor device includes a semiconductor substrate which has first and second principal surface regions; an insulated gate structure which is formed in the first principal surface region; a...
7518194 Current amplifying integrated circuit  
Present invention proposes a dramatic improvement of CMOS IC technology by providing high speed bipolar current amplifiers compatible with CMOS technological process while retaining the footprint...
7514754 Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem  
A semiconductor device is provided. The semiconductor device includes a substrate, a first epitaxial layer, a first sinker, a first buried layer, a second epitaxial layer, a second sinker and a...
7511346 Design of high-frequency substrate noise isolation in BiCMOS technology  
A high-frequency noise isolation structure and a method for forming the same are provided. The noise isolation structure isolates a first device region and a second device region over a...
7498639 Integrated BiCMOS semiconductor circuit  
An integrated BiCMOS semiconductor circuit has active moat areas in silicon. The active moat areas include electrically active components of the semiconductor circuit, which comprise active window...
7485931 Semiconductor integrated circuit  
A semiconductor integrated circuit has complementary field-effect transistors, one formed in a semiconductor substrate, the other formed in a well in the substrate, and has four power-supply...
7482642 Bipolar transistors having controllable temperature coefficient of current gain  
A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon, and...
7476942 SOI lateral semiconductor device and method of manufacturing the same  
The SOI lateral semiconductor device includes a semiconductor region of a first conductivity type, a buried oxide film layer in the semiconductor region, a thin active layer on the buried oxide...
7473965 Structure of a high breakdown voltage element for use in high power applications  
The relationship between a distance Ls between a base layer and an n type buffer layer formed on the surface of a drift layer and the thickness t of a semiconductor substrate in contact with the...
7466008 BiCMOS performance enhancement by mechanical uniaxial strain and methods of manufacture  
A BiCMOS device with enhanced performance by mechanical uniaxial strain is provided. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar...
7462530 Method for manufacturing a semiconductor device having an element isolation region  
An n-type buried diffusion layer is formed on the surface layer of the prescribed area of a p-type silicon substrate, and a p-type first high-concentration isolation diffusion layer is formed in...
7449754 Single poly BiCMOS flash cell with floating body  
A BiCMOS integrated circuit (IC) includes a floating gate-type non-volatile memory (NVM) device that uses the polycrystalline silicon gate of a CMOS FET and the P-base and N-emitter diffusions of a...
7439140 Formation of standard voltage threshold and low voltage threshold MOSFET devices  
Wells are formed in a substrate where standard Vt and low Vt devices of both a first and second type are to be fabricated. Wells defining the locations of first type standard Vt devices are masked,...
7400017 Reverse conducting semiconductor device and a fabrication method thereof  
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a...
7372109 Diode and applications thereof  
A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer....
7355248 Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same  
A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second...
7323750 Bipolar transistor and semiconductor device using same  
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed...
7309883 Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same  
A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a...
7307328 Semiconductor device with temperature sensor  
A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in...
7285837 Electrostatic discharge device integrated with pad  
A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the...
7285830 Lateral bipolar junction transistor in CMOS flow  
An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes...
7279931 High voltage tolerance output stage  
An output stage structure includes first and second PMOS transistors and first and second NMOS transistors, wherein the MOS transistors are manufactured with a twin well process. The first PMOS...
7279753 Floating base bipolar ESD devices  
The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated...
7244993 Driving circuit  
A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip...
7221036 BJT with ESD self protection  
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating...
7202536 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology  
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms...
7198998 Method of manufacturing bipolar-complementary metal oxide semiconductor  
A method of manufacturing a bipolar-complementary metal oxide semiconductor (BiCMOS) is provided. A gate in a CMOS area and a conductive layer pattern defining an opening, which opens an active...
7164174 Single poly-emitter PNP using dwell diffusion in a BiCMOS technology  
A method of forming a bipolar transistor device, and more particularly a vertical poly-emitter PNP transistor, as part of a BiCMOS type manufacturing process is disclosed. The formation of the PNP...
7157785 Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices  
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the...
7145206 MOS field effect transistor with reduced parasitic substrate conduction  
A MOS field effect transistor includes an auxiliary diffusion formed in the drain region where the auxiliary diffusion has a conductivity type opposite to the drain region and is electrically...
7122866 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same  
A semiconductor memory device includes first and second MOS transistors. The first MOS transistor is formed on a region enclosed by a first element isolating region and includes a first gate...
7115965 Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation  
The present invention provides a “subcollector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped subcollector. Instead, the inventive vertical SOI...
7109551 Semiconductor device  
A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and...
7091554 Semiconductor device  
A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and...
7071516 Semiconductor device and driving circuit for semiconductor device  
A PMOS transistor (Q 2 ) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region ( 5 ), a P diffusion region ( 6 ), and...
7057240 Semiconductor circuit, especially for ignition purposes, and the use of the same  
A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal...
7026211 Semiconductor component and method of manufacture  
A semiconductor component having smooth, void-free conductive layers and a method for manufacturing the semiconductor component. Surface features such as gate structures are formed on a...
7023053 Differential transistor pair  
A differential transistor pair comprises a plurality of transistor cells in a substrate. Each cell comprises first drain regions at the respective edge of the cell, and a second drain region in...
7015551 Semiconductor device and method of fabricating same  
A semiconductor device ( 100 ) according to the present invention comprises a vertical PNP bipolar transistor ( 20 ), an NMOS transistor ( 50 ) and a PMOS transistor ( 60 ) that are of high...
6995435 Apparatus and circuit having reduced leakage current and method therefor  
Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor...
6995432 Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions  
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are...
6982491 Sensor semiconductor package and method of manufacturing the same  
A process for fabricating an integrated circuit package includes: providing a substrate having conductive traces therein, the substrate including a cavity therein; mounting a semiconductor die to a...
6974999 Semiconductor device and method of manufacturing the same  
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard...
6972460 Semiconductor device and manufacturing method thereof  
A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer...
6965151 Device including a resistive path to introduce an equivalent RC circuit  
Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By...
6965133 Method of base formation in a BiCMOS process  
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base...
6958506 High-dielectric constant insulators for feol capacitors  
Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a...
Matches 1 - 50 out of 493 1 2 3 4 5 6 7 8 9 10 >