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7400017 Reverse conducting semiconductor device and a fabrication method thereof  
To provide a reverse conducting semiconductor device in which an insulated gate bipolar transistor and a free wheeling diode excellent in recovery characteristic are monolithically formed on a...
7372109 Diode and applications thereof  
A diode with low substrate current leakage and suitable for BiCMOS process technology. A buried layer is formed on a semiconductor substrate. A connection region and well contact the buried layer....
7355248 Metal oxide semiconductor (MOS) device, metal oxide semiconductor (MOS) memory device, and method of manufacturing the same  
A semiconductor device includes a first semiconductor layer that is formed on a first insulating layer; a second insulating layer that is formed on the first semiconductor layer; a second...
7329570 Method for manufacturing a semiconductor device  
An exemplary method of manufacturing a semiconductor device according to an embodiment of the present invention includes forming a P-well and an N-well for high voltage (HV) devices and a first...
7323750 Bipolar transistor and semiconductor device using same  
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed...
7309883 Semiconductor device capable of preventing current flow caused by latch-up and method of forming the same  
A semiconductor device includes first, second, and third wells. The first well is connected to a pad to which an external pin is connected and includes a first-type diffusion region that receives a...
7307328 Semiconductor device with temperature sensor  
A semiconductor device is disclosed. In one embodiment the semiconductor device includes a semiconductor body of which is integrated a temperature sensor for measuring the temperature prevailing in...
7304353 Formation of standard voltage threshold and low voltage threshold MOSFET devices  
Wells are formed in a substrate where standard Vt and low Vt devices of both a first and second type are to be fabricated. Wells defining the locations of first type standard Vt devices are masked,...
7304334 Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same  
Bipolar junction transistors (BJTs) are provided including silicon carbide (SiC) substrates. An epitaxial SiC base region is provided on the SiC substrate. The epitaxial SiC base region has a first...
7285837 Electrostatic discharge device integrated with pad  
A structure of an electrostatic discharge (ESD) device integrated with a pad is provided. The ESD device is integrated with the pad and formed under the pad. By using the area under the pad, the...
7285830 Lateral bipolar junction transistor in CMOS flow  
An improved lateral bipolar junction transistor and a method of forming such a lateral bipolar transistor without added mask in CMOS flow on a p-substrate are disclosed. The CMOS flow includes...
7279931 High voltage tolerance output stage  
An output stage structure includes first and second PMOS transistors and first and second NMOS transistors, wherein the MOS transistors are manufactured with a twin well process. The first PMOS...
7279753 Floating base bipolar ESD devices  
The present invention includes a bipolar ESD device for protecting an integrated circuit from ESD damage. The bipolar ESD device includes a collector connected to a terminal of the integrated...
7244993 Driving circuit  
A driving circuit and a data-line driver is provided which are capable of improving the tolerance to noise between adjacent terminals by using a conventional CMOS process while keeping the chip...
7221036 BJT with ESD self protection  
A ballasting region is placed between the base region and the collector contact of a bipolar junction transistor to relocate a hot spot away from the collector contact of the transistor. Relocating...
7202536 Modular bipolar-CMOS-DMOS analog integrated circuit and power transistor technology  
A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms...
7198998 Method of manufacturing bipolar-complementary metal oxide semiconductor  
A method of manufacturing a bipolar-complementary metal oxide semiconductor (BiCMOS) is provided. A gate in a CMOS area and a conductive layer pattern defining an opening, which opens an active...
7164174 Single poly-emitter PNP using dwell diffusion in a BiCMOS technology  
A method of forming a bipolar transistor device, and more particularly a vertical poly-emitter PNP transistor, as part of a BiCMOS type manufacturing process is disclosed. The formation of the PNP...
7157785 Semiconductor device, the method of manufacturing the same, and two-way switching device using the semiconductor devices  
A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the...
7145206 MOS field effect transistor with reduced parasitic substrate conduction  
A MOS field effect transistor includes an auxiliary diffusion formed in the drain region where the auxiliary diffusion has a conductivity type opposite to the drain region and is electrically...
7122866 Semiconductor memory device with a stacked gate including a floating gate and a control gate and method of manufacturing the same  
A semiconductor memory device includes first and second MOS transistors. The first MOS transistor is formed on a region enclosed by a first element isolating region and includes a first gate...
7115965 Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation  
The present invention provides a “subcollector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped subcollector. Instead, the inventive vertical SOI...
7109551 Semiconductor device  
A semiconductor structure with device trench and a semiconductor device in the device trench, that enables realization of high integration, lowered on-resistance, reduction in switching losses and...
7091554 Semiconductor device  
A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and...
7071516 Semiconductor device and driving circuit for semiconductor device  
A PMOS transistor (Q 2 ) provided for developing a short circuit between the base and emitter of an N-type IGBT during turn-OFF includes a P diffusion region ( 5 ), a P diffusion region ( 6 ), and...
7057240 Semiconductor circuit, especially for ignition purposes, and the use of the same  
A semiconductor circuit configuration is described, in particular for ignition applications, having a semiconductor power switching device which has a first main terminal, a second main terminal...
7026690 Memory devices and electronic systems comprising integrated bipolar and FET devices  
The invention includes BIFETRAM devices. Such devices comprise a bipolar transistor in combination with a field effect transistor (FET) in a three-dimensional stacked configuration. The memory...
7026211 Semiconductor component and method of manufacture  
A semiconductor component having smooth, void-free conductive layers and a method for manufacturing the semiconductor component. Surface features such as gate structures are formed on a...
7023055 CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding  
A method in which semiconductor-to-semiconductor direct wafer bonding is employed to provide a hybrid substrate having semiconductor layers of different crystallographic orientations that are...
7023053 Differential transistor pair  
A differential transistor pair comprises a plurality of transistor cells in a substrate. Each cell comprises first drain regions at the respective edge of the cell, and a second drain region in...
7015551 Semiconductor device and method of fabricating same  
A semiconductor device ( 100 ) according to the present invention comprises a vertical PNP bipolar transistor ( 20 ), an NMOS transistor ( 50 ) and a PMOS transistor ( 60 ) that are of high...
7009259 Semiconductor device and method of fabricating same  
A semiconductor device ( 100 ) according to the present invention comprises a vertical PNP bipolar transistor ( 20 ), an NMOS transistor ( 50 ) and a PMOS transistor ( 60 ) that are of high...
6995435 Apparatus and circuit having reduced leakage current and method therefor  
Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor...
6995432 Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions  
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are...
6982491 Sensor semiconductor package and method of manufacturing the same  
A process for fabricating an integrated circuit package includes: providing a substrate having conductive traces therein, the substrate including a cavity therein; mounting a semiconductor die to a...
6974999 Semiconductor device and method of manufacturing the same  
It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard...
6972466 Bipolar transistors with low base resistance for CMOS integrated circuits  
Complementary metal-oxide-semiconductor (CMOS) integrated circuits with bipolar transistors and methods for fabrication are provided. A bipolar transistor may have a lightly-doped base region. To...
6972460 Semiconductor device and manufacturing method thereof  
A semiconductor device including a drift layer of a first conductivity type formed on a surface of a semiconductor substrate. A surface of the drift layer has a second area positioned on an outer...
6965151 Device including a resistive path to introduce an equivalent RC circuit  
Structures for providing devices that include resistive paths specifically designed to provide a predetermined resistance between the bulk material of the device and a well tie contact. By...
6965133 Method of base formation in a BiCMOS process  
Methods for fabricating a heterojunction bipolar transistor having a raised extrinsic base is provided in which the base resistance is reduced by forming a silicide atop the raised extrinsic base...
6958506 High-dielectric constant insulators for feol capacitors  
Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a...
6952027 Semiconductor integrated circuit device and electronic card using the same  
A semiconductor integrated circuit device includes a semiconductor region of a first conductivity type. A first insulated-gate field effect transistor having a source/drain region of a second...
6949764 Fully-depleted-collector silicon-on-insulator (SOI) bipolar transistor useful alone or in SOI BiCMOS  
A bipolar transistor structure is described incorporating an emitter, base, and collector having a fully depleted region on an insulator of a Silicon-On-Insulator (SOI) substrate without the need...
6949424 Single poly-emitter PNP using DWELL diffusion in a BiCMOS technology  
A method of forming a bipolar transistor device, and more particularly a vertical poly-emitter PNP transistor, as part of a BiCMOS type manufacturing process is disclosed. The formation of the PNP...
6930360 Semiconductor device and manufacturing method of the same  
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent...
6930359 Semiconductor device and method of manufacturing the same  
In a semiconductor device having a semiconductor element having a plurality of SOI-Si layers, the height of element isolation regions from the surface of the semiconductor substrate are...
6924534 Semiconductor device having MOS transistors and bipolar transistors on a single semiconductor substrate  
The invention is directed to reducing of the number of steps in a BiCMOS process. A first N-well 3 A and a second N-well 3 B are formed deeply on a surface of a P-type semiconductor substrate. A...
6917080 Bipolar transistor and semiconductor device using same  
A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed...
6914305 Circuits and methods for electrostatic discharge protection in integrated circuits  
An output circuit of an integrated circuit device includes first and second MOS transistors including respective spaced apart pairs of source and drain regions in a substrate, arranged such that...
6911681 Method of base formation in a BiCMOS process  
Disclosed is a bipolar complementary metal oxide semiconductor (BiCMOS) or NPN/PNP device that has a collector, an intrinsic base above the collector, shallow trench isolation regions adjacent the...
Matches 1 - 50 out of 570 1 2 3 4 5 6 7 8 9 10 11 12 >