Patents in Class 257/368

Matches 1 - 50 out of 714

Match	Document	Document Title
1	7618869	Manufacturing method for increasing product yield of memory devices suffering from source/drain junction leakage A DRAM device includes contact pads having a bottom in contact with a corresponding source/drain region 21 and a top in contact with a bottom of an overlying contact plug. The source/drain region...
2	7612412	Semiconductor device and boost circuit A semiconductor device, includes: a field-effect transistor that configures a charge-pump circuit; and a supporting substrate that supports the field-effect transistor so that the field-effect...
3	7612411	Dual-gate device and method A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing...
4	7608895	Modular CMOS analog integrated circuit and power technology A family of semiconductor devices is formed in a substrate that contains no epitaxial layer. In one embodiment the family includes a 5V CMOS pair, a 12V CMOS pair, a 5V NPN, a 5V PNP, several forms...
5	7608869	Thin film transistor and method of fabricating the same A thin film transistor and a method of fabricating the same are disclosed. The method includes: sequentially depositing an amorphous silicon layer, a capping layer, and a metal catalyst layer;...
6	7608858	Spacing architecture for liquid crystal display and spacing method thereof A liquid crystal display is provided. A liquid crystal display includes a first substrate having color filters therewith; a second substrate having plural first signal lines and plural second...
7	7605430	Nonvolatile memory devices having a fin shaped active region and methods of fabricating the same A nonvolatile memory device includes a semiconductor substrate and a device isolation layer on the semiconductor substrate. A fin-shaped active region is formed between portions of the device...
8	7601993	Semiconductor device having ohmic recessed electrode The present invention provides a semiconductor device having a recess-structured ohmic electrode, in which the resistance is small and variation in the resistance value caused by manufacturing...
9	7595538	Semiconductor device A P-type MOSFET 120 includes a semiconductor substrate (N-well 102 b ); a gate insulating film formed on the semiconductor substrate, composed of a high-dielectric-constant film 108 which...
10	7595533	Thin film semiconductor device and manufacturing method When n-channel thin film transistors(TFTs) and p-channel TFTs are formed on a polycrystalline silicon film formed on a glass substrate, a process is included in which P-dopant or N-dopant is...
11	7595233	Gate stress engineering for MOSFET Methods of stressing a channel of a transistor as a result of a material volume change in a gate structure and a related structure are disclosed. In one embodiment, a method includes forming a gate...
12	7592676	Semiconductor device with a transistor having different source and drain lengths A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second...
13	7586160	Method of manufacturing a semiconductor integrated circuit and semiconductor integrated circuit A semiconductor integrated circuit is provided in which a CMOS transistor is formed on a first conductivity type semiconductor film provided on a first conductivity type supporting substrate...
14	7586130	Vertical field effect transistor using linear structure as a channel region and method for fabricating the same A vertical field effect transistor includes: an active region with a bundle of linear structures functioning as a channel region; a lower electrode, functioning as one of source and drain regions;...
15	7579669	Semiconductor device including power MOS field-effect transistor and driver circuit driving thereof A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has...
16	7579661	Semiconductor device, electronic device and electronic apparatus An semiconductor device ( 1 ) of the invention includes a semiconductor substrate provided with a channel region ( 21 ), a source region ( 22 ) and a drain region ( 23 ), a gate insulating film ( 3...
17	7576362	Semiconductor device having EL element, integrated circuit and adhesive layer therebetween To realize a high-performance liquid crystal display device or light-emitting element using a plastic film. A CPU is formed over a first glass substrate and then, separated from the first...
18	7564061	Field effect transistor and production method thereof A field effect transistor having a gate, a source, and a drain formed from metallic materials is disclosed that is able to supply a high driving current. In the field effect transistor, a source...
19	7561047	Noncontact tag and method for producing the same A noncontact IC tag 1 comprises a base film 11 , an antenna pattern 2 and an IC chip 3 that are on the base film 11 , and a surface-protective member 4 covering the antenna pattern 2 ...
20	7557436	Semiconductor device and IC card including supply voltage wiring lines formed in different areas and having different shapes Wiring lines for the supply of a voltage to feed a drive voltage to an integrated circuit formed in a semiconductor chip are disposed so as to cover a main surface of the semiconductor chip, so...
21	7554161	HfAlO₃films for gate dielectrics A dielectric film containing HfAlO 3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO 2...
22	7554139	Semiconductor manufacturing method and semiconductor device A production method for a semiconductor device according to the present invention includes: step (A) of providing a substrate including a semiconductor layer having a principal face, the substrate...
23	7554134	Integrated CMOS porous sensor A single chip wireless sensor ( 1 ) comprises a microcontroller ( 2 ) connected by a transmit/receive interface ( 3 ) to a wireless antenna ( 4 ). The microcontroller ( 2 ) is also connected to an...
24	7547956	Thick oxide P-gate NMOS capacitor for use in a low-pass filter of a circuit and method of making same A circuit with dielectric thicknesses is presented that includes a low-pass filter including one or more semiconductor devices having a thick gate oxide layer, while further semiconductor devices...
25	7545003	Defect-free source/drain extensions for MOSFETS having germanium based channel regions A process for forming defect-free source and drain extensions for a MOSFET built on a germanium based channel region deposits a first silicon germanium layer on a semiconductor substrate, deposits...
26	7545002	Low noise and high performance LSI device, layout and manufacturing method In semiconductor devices in which both NMOS devices and PMOS devices are used to perform in different modes such as analog and digital modes, stress engineering is selectively applied to particular...
27	7541650	Gate electrode structures Gate electrode structures used in field effect transistors and integrated circuits and methods of manufacture are disclosed. Improved work function and threshold modulation are provided by the...
28	7541649	Semiconductor device having SOI substrate A semiconductor device includes first semiconductor layers with a first conductivity, second to fifth semiconductor layers with a second conductivity, gate electrodes, and a first wiring layer. The...
29	7538377	Semiconductor memory device In a cell contact pad method, a consecutive dummy cell contact pad intersecting with a cell gate electrode is formed at an outer peripheral portion of the memory cell array. The dummy cell contact...
30	7535064	Semiconductor device having a fin and method of manufacturing the same A semiconductor device includes a Fin, a source region and a drain region, a first extension region, a second extension region and a channel region. The Fin is formed on a major surface of a...
31	7535061	Fin-field effect transistors (Fin-FETs) having protection layers Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is...
32	7531880	Semiconductor device and manufacturing method thereof A device includes a semiconductor layer on an insulating layer; a gate insulator on the semiconductor layer; a comb-shaped gate electrode on the gate insulator, including a base portion extending...
33	7518196	Field effect transistor with narrow bandgap source and drain regions and method of fabrication A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer formed on a silicon layer. A pair of...
34	7514731	Switch elements and a DC/DC converter using the same A semiconductor device in which the self-turn-on phenomenon is prevented that can significantly improve power conversion efficiency. The semiconductor device is a system-in-package for power supply...
35	7511998	Non-volatile memory device and method of fabricating the same A non-volatile memory device, and method of forming the same, increases or maximizes the performance of an ultramicro-structured device. In one embodiment, a non-volatile memory device comprises a...
36	7511360	Semiconductor device having stressors and method for forming N channel and P channel transistors are enhanced by applying stressor layers of tensile and compressive, respectively, over them. A previously unknown problem was discovered concerning the two...
37	7508031	Enhanced segmented channel MOS transistor with narrowed base regions By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor...
38	7504695	SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cell An SRAM memory cell has at least one memory node and at least one selection transistor, which is electrically connected to the memory node, a first bit line and a first word line. Furthermore, the...
39	7501668	Semiconductor memory devices having contact pads with silicide caps thereon An integrated circuit device having a semiconductor substrate includes a gate structure on the semiconductor substrate. Source/drain regions are on opposite sides of the gate structure. A contact...
40	7498605	Flat panel display An organic light emitting device that improves contrast by forming a gate wiring and a data wiring of a black matrix with a concentration gradient between a conductive material of high...
41	7495295	Semiconductor device and method for fabricating the same In a semiconductor device according to the present invention, the power source voltage Vdd 1 of a core transistor Tr 1, the power source voltage Vdd 2 of an I/O transistor Tr 2, and the power...
42	7494858	Transistor with improved tip profile and method of manufacture thereof Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to...
43	7492029	Asymmetric field effect transistors (FETs) A semiconductor structure. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source...
44	7492013	Systems and arrangements to interconnect components of a semiconductor device Systems and arrangements to interconnect cells and structures within cells of an integrated circuit to enhance cell density. Embodiments comprise an adjusted polysilicon gate pitch to metal wire...
45	7489009	Multiple-gate MOSFET device with lithography independent silicon body thickness Multi-gate MOS transistors and fabrication methods are described, in which the transistor semiconductor body thickness or width is lithography independent, allowing scaled triple and quad-gate...
46	7486541	Resistive cell structure for reducing soft error rate A memory cell for reducing soft error rate and the method for forming same are disclosed. The memory cell comprises a first bit line signal (BL), a second bit line signal complementary to the first...
47	7482644	Integrated semiconductor memory and method for electrically stressing an integrated semiconductor memory Semiconductor memories ( 1 ) have segmented word lines ( 5 a, 5 b ), which in each case have a main word line ( 10 a, 10 b ) made of a conductive metal and a plurality of interconnect segments (...
48	7482628	Array substrate for liquid crystal display device and method of fabricating the same An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor...
49	7482615	High performance MOSFET comprising stressed phase change material The present invention relates to semiconductor devices that each comprises at least one field effect transistor (FET) containing an intrinsically stressed phase change material layer. The...
50	7476942	SOI lateral semiconductor device and method of manufacturing the same The SOI lateral semiconductor device includes a semiconductor region of a first conductivity type, a buried oxide film layer in the semiconductor region, a thin active layer on the buried oxide...

Matches 1 - 50 out of 714

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