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7615826 |
Electrostatic discharge protection semiconductor structure
An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit...
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7615810 |
Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus
An electro-optical device includes first and second substrates that are bonded to each other, the first substrate having an extended portion extended from the second substrate on a first side...
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7582938 |
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
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7579658 |
Devices without current crowding effect at the finger's ends
ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or...
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7573080 |
Transient suppression semiconductor device
The HBT-based transient suppression device contains a collector layer of a first conduction type, a base layer of a second conduction type, an emitter layer of the first conduction type, stacked in...
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7554160 |
Semiconductor device
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region...
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7550798 |
CMOS image sensor and method for manufacturing the same
Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive...
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7525159 |
Turn-on-efficient bipolar structures for on-chip ESD protection
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well...
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7514751 |
SiGe DIAC ESD protection structure
A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very...
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7514750 |
Semiconductor device and fabrication method suitable therefor
A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions....
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7511345 |
Bulk resistance control technique
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region...
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7508038 |
ESD protection transistor
An electrostatic discharge (ESD) transistor structure includes a self-aligned outrigger less than 0.4 microns from a gate electrode that is 50 microns wide. The outrigger is fabricated on ordinary...
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7498615 |
Electro-static discharge protection circuit and semiconductor device having the same
An electro-static discharge protection circuit includes a thyristor mode ensuring circuit and a thyristor rectifier circuit. The thyristor mode ensuring circuit includes a capacitive element...
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7482642 |
Bipolar transistors having controllable temperature coefficient of current gain
A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon, and...
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7473973 |
Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit
A semiconductor device includes a silicon-controlled rectifier to protect an internal circuit from electrostatic discharge damage and a first metal-oxide-silicon field-effect transistor to apply a...
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7465995 |
Resistor structure for ESD protection circuits
A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD...
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7462885 |
ESD structure for high voltage ESD protection
An electrostatic discharge-protected MOS structure is disclosed. An electrostatic discharge-protected MOS structure includes a semiconductor substrate of a first type, a first well of the first...
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7439592 |
ESD protection for high voltage applications
An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant...
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7439145 |
Tunable semiconductor diodes
A diode structure fabrication method. In a P− substrate, an N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of the diode structure. Upon the N+ layer,...
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7427787 |
Guardringed SCR ESD protection
Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for...
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7405445 |
Semiconductor structure and method for ESD protection
A semiconductor integrated circuit structure includes a plurality of diodes disposed in the substrate. These diodes are electrically coupled in series. At least one insertion region is disposed in...
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7402846 |
Electrostatic discharge (ESD) protection structure and a circuit using the same
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
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7397088 |
Electrostatic discharge protection device for radio frequency applications based on an isolated L-NPN device
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high...
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7382025 |
ESD protection structure with lower maximum voltage
A semiconductor structure for protecting integrated circuits from ESD pulses includes a semiconductor substrate of a first conductivity type and with a first dopant concentration. A well of a...
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7361957 |
Device for electrostatic discharge protection and method of manufacturing the same
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes...
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7355250 |
Electrostatic discharge device with controllable holding current
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped...
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7348643 |
Semiconductor dual guardring arrangement
A semiconductor dual guardring arrangement is provided which is useful during electrostatic discharge (ESD) events as well as during normal operating conditions. In particular, an inner guard that...
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7342282 |
Compact SCR device and method for integrated circuits
A semiconductor device and method for electrostatic discharge protection. The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled...
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7332778 |
Semiconductor device and method of manufacturing same
To refine a semiconductor device ( 100 ), in particular a S[ilicon]O[n]I[nsulator] device, comprising:
at least one isolating layer ( 10 ) made of a dielectric material; at least one silicon...
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7329925 |
Device for electrostatic discharge protection
A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor...
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7291888 |
ESD protection circuit using a transistor chain
An electrostatic discharge (ESD) protection circuit for dissipating an ESD current from a first pad to a second pad during an ESD event. The ESD protection circuit includes a first bipolar...
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7282768 |
MOS field-effect transistor
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a...
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7274071 |
Electrostatic damage protection device with protection transistor
This invention provides an electrostatic damage protection device which can protects a device to be protected enough from an electrostatic damage and prevents damages of protection transistors...
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7250660 |
ESD protection that supports LVDS and OCT
Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least...
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7244992 |
Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well...
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7217980 |
CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present...
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7215005 |
Bipolar ESD protection structure
The invention describes the fabrication and structure of an ESD protection device for integrated circuit semiconductor devices with improved ESD protection and resiliency. A vertical bipolar npn...
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7205613 |
Insulating substrate for IC packages having integral ESD protection
An IC package substrate having integral ESD protection features and elements and a method for construction of the same are disclosed
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7205612 |
Fully silicided NMOS device for electrostatic discharge protection
A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is...
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7202114 |
On-chip structure for electrostatic discharge (ESD) protection
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon...
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7164566 |
Electrostatic discharge protection device and method therefore
Methods and apparatus are provided an electrostatic discharge (ESD) protection device having a first terminal and a second terminal. The ESD protection device comprises a vertical transistor having...
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7136268 |
Tunable ESD trigger and power clamp circuit
A circuit and a method for the electrostatic discharge protection of integrated circuits. The electrostatic discharge protection circuit, including: an electrostatic discharge protection circuit,...
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7126191 |
Double-diffused semiconductor device
A DMOSFET and a method of fabricating the same, capable of keeping a desirable level of drain voltage resistance and, at the same time, of reducing the drain resistance. In a DMOSFET configured as...
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7115951 |
Low triggering voltage ESD protection structure and method for reducing the triggering voltage
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate...
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7112853 |
System for ESD protection with extra headroom in relatively low supply voltage integrated circuits
An ESD protection system providing extra headroom at an integrated circuit (IC) terminal pad. The system includes an ESD protection circuit having one or more first diodes coupled in series between...
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7112828 |
Semiconductor device
A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which...
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7109533 |
Electrostatic discharge protection device
There is provided an electrostatic discharge protection device comprising a P conductive type first P well region 101 formed in a P type epitaxial layer 31 being deposited on a surface of a P+...
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7098509 |
High energy ESD structure and method
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled...
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7075156 |
Collector structure for electrostatic discharge protection circuits
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first...
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7075123 |
Semiconductor input protection circuit
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D 1 is...
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