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7615826 Electrostatic discharge protection semiconductor structure  
An electrostatic discharge (ESD) protection device with adjustable single-trigger or multi-trigger voltage is provided. The semiconductor structure has multi-stage protection semiconductor circuit...
7615810 Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus  
An electro-optical device includes first and second substrates that are bonded to each other, the first substrate having an extended portion extended from the second substrate on a first side...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7579658 Devices without current crowding effect at the finger's ends  
ESD protection devices without current crowding effect at the finger's ends. It is applied under MM ESD stress in sub-quarter-micron CMOS technology. The ESD discharging current path in the NMOS or...
7573080 Transient suppression semiconductor device  
The HBT-based transient suppression device contains a collector layer of a first conduction type, a base layer of a second conduction type, an emitter layer of the first conduction type, stacked in...
7554160 Semiconductor device  
A semiconductor device has a source region, a channel region and a drain region formed in order along a surface of a substrate, a vertical type bipolar transistor formed from the source region...
7550798 CMOS image sensor and method for manufacturing the same  
Provided is a CMOS image sensor and method for manufacturing the same. The CMOS image sensor includes a semiconductor substrate, a gate electrode formed on the semiconductor substrate, a conductive...
7525159 Turn-on-efficient bipolar structures for on-chip ESD protection  
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well...
7514751 SiGe DIAC ESD protection structure  
A diode for alternating current (DIAC) electrostatic discharge (ESD) protection circuit is formed in a silicon germanium (SiGe) hetrojunction bipolar transistor (HBT) process that utilizes a very...
7514750 Semiconductor device and fabrication method suitable therefor  
A semiconductor device according to the invention has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions....
7511345 Bulk resistance control technique  
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region...
7508038 ESD protection transistor  
An electrostatic discharge (ESD) transistor structure includes a self-aligned outrigger less than 0.4 microns from a gate electrode that is 50 microns wide. The outrigger is fabricated on ordinary...
7498615 Electro-static discharge protection circuit and semiconductor device having the same  
An electro-static discharge protection circuit includes a thyristor mode ensuring circuit and a thyristor rectifier circuit. The thyristor mode ensuring circuit includes a capacitive element...
7482642 Bipolar transistors having controllable temperature coefficient of current gain  
A bipolar transistor which has a base formed of a combination of shallow and deep acceptors species. Specifically, elements such as Indium, Tellurium, and Gallium are deep acceptors in silicon, and...
7473973 Semiconductor device including metal-oxide-silicon field-effect transistor as a trigger circuit  
A semiconductor device includes a silicon-controlled rectifier to protect an internal circuit from electrostatic discharge damage and a first metal-oxide-silicon field-effect transistor to apply a...
7465995 Resistor structure for ESD protection circuits  
A semiconductor device includes an ESD protection device on a substrate, and a resistor having a gate structure overlying a resistor well separating a first doped region coupled to the ESD...
7462885 ESD structure for high voltage ESD protection  
An electrostatic discharge-protected MOS structure is disclosed. An electrostatic discharge-protected MOS structure includes a semiconductor substrate of a first type, a first well of the first...
7439592 ESD protection for high voltage applications  
An ESD device includes a low doped well connected to a first contact and a diffusion area connected to a second contact. A substrate between the low doped well and the diffusion area has a dopant...
7439145 Tunable semiconductor diodes  
A diode structure fabrication method. In a P− substrate, an N+ layer is implanted. The N+ layer has an opening whose size affects the breakdown voltage of the diode structure. Upon the N+ layer,...
7427787 Guardringed SCR ESD protection  
Methods and circuits are disclosed for protecting an electronic circuit from ESD damage using an SCR ESD cell. An SCR circuit is coupled to a terminal of an associated microelectronic circuit for...
7405445 Semiconductor structure and method for ESD protection  
A semiconductor integrated circuit structure includes a plurality of diodes disposed in the substrate. These diodes are electrically coupled in series. At least one insertion region is disposed in...
7402846 Electrostatic discharge (ESD) protection structure and a circuit using the same  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
7397088 Electrostatic discharge protection device for radio frequency applications based on an isolated L-NPN device  
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high...
7382025 ESD protection structure with lower maximum voltage  
A semiconductor structure for protecting integrated circuits from ESD pulses includes a semiconductor substrate of a first conductivity type and with a first dopant concentration. A well of a...
7361957 Device for electrostatic discharge protection and method of manufacturing the same  
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes...
7355250 Electrostatic discharge device with controllable holding current  
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped...
7348643 Semiconductor dual guardring arrangement  
A semiconductor dual guardring arrangement is provided which is useful during electrostatic discharge (ESD) events as well as during normal operating conditions. In particular, an inner guard that...
7342282 Compact SCR device and method for integrated circuits  
A semiconductor device and method for electrostatic discharge protection. The semiconductor device includes a first semiconductor controlled rectifier and a second semiconductor controlled...
7332778 Semiconductor device and method of manufacturing same  
To refine a semiconductor device ( 100 ), in particular a S[ilicon]O[n]I[nsulator] device, comprising: at least one isolating layer ( 10 ) made of a dielectric material; at least one silicon...
7329925 Device for electrostatic discharge protection  
A device for electrostatic discharge (ESD) protection is disclosed. The device for electrostatic discharge protection includes a lateral bipolar transistor and a diode. The semiconductor transistor...
7291888 ESD protection circuit using a transistor chain  
An electrostatic discharge (ESD) protection circuit for dissipating an ESD current from a first pad to a second pad during an ESD event. The ESD protection circuit includes a first bipolar...
7282768 MOS field-effect transistor  
A high-reliable depletion-type MOS field-effect transistor as a process monitor is provided. A diode formed in polycrystalline silicon and a diode formed in a semiconductor substrate form a...
7274071 Electrostatic damage protection device with protection transistor  
This invention provides an electrostatic damage protection device which can protects a device to be protected enough from an electrostatic damage and prevents damages of protection transistors...
7250660 ESD protection that supports LVDS and OCT  
Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least...
7244992 Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection  
A semiconductor device suitable for applications in an electrostatic discharge (ESD) protection circuit, including a semiconductor substrate, a first well formed in the substrate, a second well...
7217980 CMOS silicon-control-rectifier (SCR) structure for electrostatic discharge (ESD) protection  
An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor (CMOS) process is disclosed. in one embodiment of the present...
7215005 Bipolar ESD protection structure  
The invention describes the fabrication and structure of an ESD protection device for integrated circuit semiconductor devices with improved ESD protection and resiliency. A vertical bipolar npn...
7205613 Insulating substrate for IC packages having integral ESD protection  
An IC package substrate having integral ESD protection features and elements and a method for construction of the same are disclosed
7205612 Fully silicided NMOS device for electrostatic discharge protection  
A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is...
7202114 On-chip structure for electrostatic discharge (ESD) protection  
A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon...
7164566 Electrostatic discharge protection device and method therefore  
Methods and apparatus are provided an electrostatic discharge (ESD) protection device having a first terminal and a second terminal. The ESD protection device comprises a vertical transistor having...
7136268 Tunable ESD trigger and power clamp circuit  
A circuit and a method for the electrostatic discharge protection of integrated circuits. The electrostatic discharge protection circuit, including: an electrostatic discharge protection circuit,...
7126191 Double-diffused semiconductor device  
A DMOSFET and a method of fabricating the same, capable of keeping a desirable level of drain voltage resistance and, at the same time, of reducing the drain resistance. In a DMOSFET configured as...
7115951 Low triggering voltage ESD protection structure and method for reducing the triggering voltage  
In a triggering ESD protection structure, the triggering voltage is reduced by introducing one or more corners or spikes into the p-n breakdown junction. This may be done by providing a polygate...
7112853 System for ESD protection with extra headroom in relatively low supply voltage integrated circuits  
An ESD protection system providing extra headroom at an integrated circuit (IC) terminal pad. The system includes an ESD protection circuit having one or more first diodes coupled in series between...
7112828 Semiconductor device  
A semiconductor device that permits an increase in static destruction resistance while preventing an increase in the chip size includes a protective element formed by a polysilicon layer in which...
7109533 Electrostatic discharge protection device  
There is provided an electrostatic discharge protection device comprising a P conductive type first P well region 101 formed in a P type epitaxial layer 31 being deposited on a surface of a P+...
7098509 High energy ESD structure and method  
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled...
7075156 Collector structure for electrostatic discharge protection circuits  
Electrostatic discharge (ESD) devices for protection of integrated circuits are described. ESD devices may be configured to provide uniform breakdown of finger regions extending through a first...
7075123 Semiconductor input protection circuit  
A lateral PNP transistor PB and a lateral NPN transistor NB are serially connected between an input terminal and a reference potential (ground potential). In the transistor PB, a diode D 1 is...
Matches 1 - 50 out of 315 1 2 3 4 5 6 7 >