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9041110 Semiconductor device for electrostatic discharge protection  
A semiconductor device includes a substrate, a gate positioned on the substrate, a drain region and a source region formed at respective two sides of the gate in the substrate, at least a first...
9041113 Semiconductor integrated device  
A semiconductor integrated device in which electrostatic discharge damage can be reliably prevented, includes a semiconductor substrate in which an electrostatic protection circuit including a...
9041112 Semiconductor device including a current mirror circuit  
In a semiconductor device, where, with respect to a parasitic resistor in a current mirror circuit, a compensation resistor for compensating the parasitic resistor is provided in the current...
9006838 High sheet resistor in CMOS flow  
An integrated circuit containing CMOS gates and a counterdoped polysilicon gate material resistor which has a body region that is implanted concurrently with the NSD layers of the NMOS transistors...
8994068 ESD protection device  
An electrostatic discharge protection clamp adapted to limit a voltage appearing across protected terminals of an integrated circuit to which the electrostatic discharge protection clamp is...
8981484 Ballast resistor for super-high-voltage devices  
An integrated circuit (IC) including a well region of the IC having a first doping level and a plurality of semiconductor regions implanted in the well region. Each of the plurality of...
8963253 Bi-directional bipolar junction transistor for high voltage electrostatic discharge protection  
A bi-directional electrostatic discharge (ESD) protection device may include a substrate, an N+ doped buried layer, an N-type well region and two P-type well regions. The N+ doped buried layer may...
8963277 Semiconductor structure and method of manufacturing the same  
A semiconductor structure with a high voltage area and a low voltage area includes a substrate of a first conductivity type accommodating the high voltage area and the low voltage area. A resistor...
8952457 Electrostatic discharge protection circuit  
An ESD protection circuit including a substrate of a first conductivity type, an annular well region of a second conductivity type, two first regions of the first conductivity type and at least...
8946822 Apparatus and method for protection of precision mixed-signal electronic circuits  
Apparatus and methods for precision mixed-signal electronic circuit protection are provided. In one embodiment, an apparatus includes a p-well, an n-well, a poly-active diode structure, a p-type...
8941181 Compensated well ESD diodes with reduced capacitance  
An integrated circuit with a shallow trench isolated, low capacitance, ESD protection diode. An integrated circuit with a gate space isolated, low capacitance, ESD protection diode. An integrated...
8933514 Transistor with MIM (Metal-Insulator-Metal) capacitor  
The orientation polarization (positive and negative) of the Si—N bonds and the Si—O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a...
8927356 Removal of nitride bump in opening replacement gate structure  
Methods for opening polysilicon NFET and PFET gates for a replacement gate process are disclosed. Embodiments include providing a polysilicon gate with a nitride cap; defining PFET and NFET...
8927869 Semiconductor structures and methods of manufacture  
Wire-bonded semiconductor structures using organic insulating material and methods of manufacture are disclosed. The method includes forming a metal wiring layer in an organic insulator layer. The...
8928043 High voltage FET device with voltage sensing  
A high voltage FET device provides drain voltage information with less overall silicon area consumption by forming a spiral resistance poly structure over a drift region of the high voltage FET...
8916935 ESD clamp in integrated circuits  
A device includes a High-Voltage N-Well (HVNW) region have a first edge, and a High-Voltage P-Well (HVPW) region having a second edge adjoining the first edge. A first Shallow N-well (SHN) region...
8890250 Electrostatic discharge protection structure  
An electrostatic discharge protection structure includes a semiconductor substrate, a first well region, a gate structure, a second well region, a second well region, a second conductive region,...
8878296 Electrostatic discharge protection circuitry  
Integrated circuits with electrostatic discharge (ESD) protection circuitry are provided. The ESD protection circuitry does not include polysilicon resistors. The ESD protection circuitry may...
8872273 Integrated gate controlled high voltage divider  
An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift...
8866229 Semiconductor structure for an electrostatic discharge protection circuit  
An embodiment of a semiconductor structure for an electrostatic discharge (“ESD”) protection circuit is disclosed. For this embodiment, there is a substrate of a first polarity type. A device area...
8842400 Initial-on SCR device on-chip ESD protection  
A semiconductor device for electrostatic discharge (ESD) protection includes a silicon controlled rectifier (SCR) including a semiconductor substrate, a first well formed in the substrate, a...
8836034 Semiconductor device  
A protection circuit used for a semiconductor device is made to effectively function and the semiconductor device is prevented from being damaged by a surge. A semiconductor device includes a...
8816436 Method and structure for forming fin resistors  
A fin resistor and method of fabrication are disclosed. The fin resistor comprises a plurality of fins arranged in a linear pattern with an alternating pattern of epitaxial regions. An anneal...
8803206 3D semiconductor device and structure  
A 3D semiconductor device, including: a first layer including first transistors; a second layer including second transistors; where the second transistors are aligned to the first transistors, and...
8786020 Method of fabricating a semiconductor device including a gate having a plurality of fingers extended over a plurality of isolation regions  
Embodiments of the present invention describe a semiconductor device implementing the reduced-surface-field (RESURF) effect. The semiconductor device comprises a source/drain region having a...
8779519 Semiconductor device having two-way conduction characteristics, and electrostatic discharge protection circuit incorporating the same  
A semiconductor device includes an n-type first doped region for receiving an external voltage, an n-type second doped region and a p-type third doped regions all formed in a p-type substrate, and...
8779516 Semiconductor device  
A second conduction-type MIS transistor in which a source is coupled to a second power source over the surface of a first conduction-type well and a drain is coupled to the open-drain signal...
8772871 Partially depleted dielectric resurf LDMOS  
An partially depleted Dieler LDMOSFET transistor (100) is provided which includes a substrate (150), a drift region (110) surrounding a drain region (128), a first well region (107) surrounding...
8766365 Circuit-protection devices  
In an embodiment, a circuit-protection device has first and second circuit-protection units, each comprising first and second nodes. A gate is between the first nodes of first and second...
8723263 Electrostatic discharge protection device  
An electrostatic discharge (ESD) includes a semiconductor substrate having the first conductive type, a well having the first conductive type, a buried layer having the second conductive type and...
8717724 Diode for electrostatic protection  
Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that...
8716802 Semiconductor device structure and fabricating method thereof  
A semiconductor device structure including a substrate, a resistor, and a first gate structure is provided. The substrate includes a resistor region and a metal-oxide-semiconductor (MOS)...
8710590 Electronic component and a system and method for producing an electronic component  
In a method for producing an electronic component, a substrate is doped by introducing doping atoms. In the doped substrate, at least one connection region of the electronic component is formed by...
8704328 High-voltage integrated circuit device  
A high-voltage integrated circuit device has formed therein a high-voltage junction terminating region that is configured by a breakdown voltage region formed of an n-well region, a ground...
8703552 Method and structure for forming capacitors and memory devices on semiconductor-on-insulator (SOI) substrates  
A device is provided that includes memory, logic and capacitor structures on a semiconductor-on-insulator (SOI) substrate. In one embodiment, the device includes a semiconductor-on-insulator (SOI)...
8692330 Semiconductor device  
A semiconductor device equally turns on the parasitic bipolar transistors in the finger portions of the finger form source and drain electrodes when a surge voltage is applied, even with the P+...
8686478 Methods of forming and programming an electronically programmable resistor  
Methods of electrically programming a diffusion resistor by using trapped charge in a trapped charge region adjacent to the resistor to vary the resistance of the resistor, and the resistor, are...
8686508 Structures, methods and applications for electrical pulse anneal processes  
Structures and methods are provided for nanosecond electrical pulse anneal processes. The method of forming an electrostatic discharge (ESD) N+/P+ structure includes forming an N+ diffusion on a...
8680620 Bi-directional blocking voltage protection devices and methods of forming the same  
Bi-directional blocking voltage protection devices and methods of forming the same are disclosed. In one embodiment, a protection device includes an n-well and first and second p-wells disposed on...
8664741 High voltage resistor with pin diode isolation  
Provided is a high voltage semiconductor device that includes a PIN diode structure formed in a substrate. The PIN diode includes an intrinsic region located between a first doped well and a...
8664725 Strain enhanced transistors with adjustable layouts  
A transistor may include a semiconductor region such as a rectangular doped silicon well. Gate fingers may overlap the silicon well. The gate fingers may be formed from polysilicon and may be...
8659086 ESD protection for bipolar-CMOS-DMOS integrated circuit devices  
An Electro-Static Discharge (ESD) protection device is formed in an isolated region of a semiconductor substrate. The ESD protection device may be in the form of a MOS or bipolar transistor or a...
8653598 Electrical switch using gated resistor structures and three-dimensional integrated circuits using the same  
An electrical switch using a gated resistor structure includes an isolation layer, a doped silicon layer arranged on the isolation layer and having a recessed portion with reduced thickness, the...
8648421 Electrostatic discharge (ESD) device and semiconductor structure  
An electrostatic discharge (ESD) device is described, including a gate line, a source region at a first side of the gate line, a comb-shaped drain region disposed at a second side of the gate line...
8648420 Semiconductor device  
A semiconductor device includes an input/output pad, and a data transfer unit configured to form a parasitic diode between the input/output pad and a power supply terminal thereof to discharge an...
8643111 Electrostatic discharge (ESD) protection device  
An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes an epitaxy layer disposed on a semiconductor substrate. An isolation pattern is disposed on the...
8633538 Semiconductor device  
A semiconductor device comprises a vertical MOS transistor including a semiconductor substrate having a silicon pillar, a gate electrode formed along a sidewall of the silicon pillar, a gate...
8633543 Electro-static discharge protection circuit and semiconductor device  
An electro-static discharge protection circuit includes: a PNPN junction, a P-type side of the PNPN junction being coupled to a terminal, an N-type side of the PNPN junction being coupled to...
8610169 Electrostatic discharge protection circuit  
The invention discloses an ESD protection circuit, comprising a P-type substrate; an N-well formed on the P-type substrate; a P-doped region formed on the N-well, wherein the P-doped region is...
8610216 Structure for protecting an integrated circuit against electrostatic discharges  
A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell...