Matches 301 - 350 out of 572 < 1 2 3 4 5 6 7 8 9 10 11 12 >
Match Document Document Title
6236088 Semiconductor device gate structure for thermal overload protection  
An arrangement for providing thermal overload protection for a gated electrode power semiconductor device comprises connecting the gate electrode of the device in a series circuit between the gate...
6229183 ESD damage immunity buffer  
The present invention discloses an ESD damage immunity buffer, comprising: a gate, a first doped region, a second doped region, a third doped region, and a resist layer. The ESD damage immunity...
6229182 Semiconductor device having protection against electrostatic discharge  
To improve the robustness of a protection against ESD, a transistor structure is proposed in which breakdown does not occur at the surface of the silicon body but in the bulk of the silicon at a...
6222237 Structure of electrostatic discharge protection device  
A structure of an ESD protection device located between a pad and an internal circuit. The structure comprises a transistor with a source and a drain connecting to the ground, and an N+ resistor...
6222236 Protection circuit and method for protecting a semiconductor device  
An electrostatic discharge (ESD) protection circuit (20) includes an active load circuit (22) connected to a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor (21) having a Lightly...
6218706 Integrated circuit with improved electrostatic discharge protection circuitry  
An MOS integrated circuit device with improved electrostatic protection capability includes high and low voltage rails for bringing externally-supplied power to points within the chip. Input...
6218705 Semiconductor device having protective element to conduct current to substrate  
A semiconductor device includes a protective element which is formed on a semiconductor substrate and conducts current to the semiconductor substrate at a voltage lower than the breakdown voltage...
6215156 Electrostatic discharge protection device with resistive drain structure  
A transistor formed in a semiconductor substrate having improved ESD protection. The transistor includes a gate structure formed atop of a semiconductor substrate. First and second sidewall spacers...
6207997 Thin film transistor for antistatic circuit and method for fabricating the same  
A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density...
6207996 Semiconductor device and method for manufacturing the same  
A semiconductor device is provided without degrading the performance of an internal circuit, which has an SOI structure coexistingly having an SOI static electricity protection circuit to prevent...
6204537 ESD protection scheme  
An integrated circuit device is provided comprising an integrated circuit pad, an internal integrated circuit, and an ESD protection circuit. The internal integrated circuit is conductively coupled...
6198135 Semiconductor device having electrostatic discharge protection element and manufacturing method thereof  
A semiconductor device having an ESD protection element with an improved ESD resistance is obtainable even if it is formed on the same substrate together with an internal circuit. An SiGe--P well...
6194764 Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge  
An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor,...
6191454 Protective resistance element for a semiconductor device  
A semiconductor device includes a transistor and a protective resistance element. The transistor has first and second impurity regions of a first conductivity type formed on a surface of a...
6175394 Capacitively coupled field effect transistors for electrostatic discharge protection in flat panel displays  
A flat panel display includes a plurality of parallel row select lines and a plurality of column drive lines, with the row select lines and the column drive lines intersecting to define a matrix of...
6172404 Tuneable holding voltage SCR ESD protection  
An SCR provides for increased holding voltage by decoupling the pnp and npn parasitic bipolar transistors of the SCR. In one embodiment, a N+ region is placed between the n+ region and the p+...
6172378 Integrated circuit varactor having a wide capacitance range  
Integrated circuit varactor structures that include either an P-gate/N-well or N-gate/P-well layer configuration formed on an SOI substrate. The varactor structure is completely electrically...
6169312 Static protection circuit for use in a semiconductor integrated circuit device  
A static protection circuit has a first MOS transistor of a P-channel type whose source-drain channel is connected between a signal line leading to an external connection terminal and ground; it...
6163056 Semiconductor device having electrostatic discharge  
A semiconductor device includes a semiconductor substrate having a major surface, a source region of a second conductivity type, a drain region of the second conductivity type, and a first...
6157066 Semiconductor aggregate substrate and semiconductor device with fuse structure to prevent breakdown  
Electrostatic breakdown is avoided during fabrication of individual semiconductor devices using a semiconductor aggregate substrate. The semiconductor aggregate substrate is comprised of a large...
6157065 Electrostatic discharge protective circuit under conductive pad  
An electrostatic discharge protective circuit under an input pad. The electrostatic discharge protective circuit has at least a MOS, wherein the MOS comprises a drain region, a gate structure and a...
6153913 Electrostatic discharge protection circuit  
The invention provides an ESD protection circuit, which is formed on a semiconductor substrate. There is at least one MOS transistor branches out at a place between an I/O port and an internal...
6150671 Semiconductor device having high channel mobility and a high breakdown voltage for high power applications  
A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift...
6146951 Method of manufacturing semiconductor device for preventing electrostatic discharge  
A method of manufacturing a semiconductor device for preventing ESD damage is disclosed. A semiconductor device for preventing against ESD damage according to a first embodiment of the present...
6144070 High breakdown-voltage transistor with electrostatic discharge protection  
A transistor including a source region 506 in a semiconductor body 502; a bulk region 508 in the semiconductor body adjacent the source region; a drain region in the semiconductor body adjacent the...
6140683 Efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection  
A high voltage DENMOS transistor (10) having improved ESD protection. The transistor (10) is optimized to provide maximum substrate current in order to turn on the inherent lateral npn transistor...
6140682 Self protected stacked NMOS with non-silicided region to protect mixed-voltage I/O pad from ESD damage  
A self-protected output driver for an integrated circuit utilizing cascode configured MOSFET transistors is formed in a single active region, allowing a smaller layout area without sacrificing...
6133602 Method of reducing dielectric damage due to charging in the fabrication of stacked gate structures  
A method of fabricating structures to reduce dielectric damage due to charging is easily incorporated into existing stacked gate fabrication processes. The conductive layers are patterned to form...
6130460 Interconnect track connecting, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit, and process for producing such a track  
An interconnect track connects, on several metallization levels, an insulated gate of a transistor to a discharge diode within an integrated circuit. The interconnect track comprises a first track...
6118155 Integrated ESD structures for use in ESD circuitry  
Apparatus for use in ESD circuitry are provided that comprise a substrate layer on a dielectric wherein the substrate layer includes a first geometric region comprising alternating regions of first...
6118154 Input/output protection circuit having an SOI structure  
An I/O protection circuit includes a P-channel MOS transistor connected between an input terminal and a power supply line, and an N-channel MOS transistor connected between the input terminal and a...
6114731 Low capacitance ESD structure having a source inside a well and the bottom portion of the drain inside a substrate  
Disclosed is an electrostatic discharge protection transistor having low input capacitance and method for making the same. The electrostatic discharge protection transistor includes a semiconductor...
6097066 Electro-static discharge protection structure for semiconductor devices  
The structure includes a plurality of first ring shape structure formed on a semiconductor wafer to act as the gates of the MOS devices. The areas in the inner side of the first ring shape...
6091114 Method and apparatus for protecting gate oxide from process-induced charging effects  
A semiconductor device includes a first transistor (52) and gated diode (50) formed at a face of a semiconductor layer (56). The first transistor (52) includes a source region (60a), a drain region...
6081015 Semiconductor device having improved protective circuits  
In a semiconductor device, in order to protect an interior of the device, protective circuits are provided. The protective circuits include a first circuit connected between the first terminal and...
6078083 ESD protection circuit for dual 3V/5V supply devices using single thickness gate oxides  
An ESD protection circuit for dual 3V/5V supply devices. ESD protection circuit 10 comprises a switching element 12 connected between a bond pad 14 and primary protection device 16. Primary...
6064093 Protection circuit with clamping feature for semiconductor device  
In order to protect an internal circuit from high voltages caused by static electricity applied to a pad of a semiconductor device, a protection circuit is configured of a clamping circuit portion...
6057579 Transistor structure of ESD protection device  
A transistor structure for an ESD protection device, which includes a gate structure constituted by a connecting part and a plurality of protecting parts on a substrate. The protecting parts...
6057577 Component of protection of an integrated MOS power transistor against voltage gradients  
The present invention relate to a device of protection against voltage gradients of a monolithic component including a vertical MOS power transistor and logic circuits. The protection circuit has...
6051856 Voltage-controlled resistor utilizing bootstrap gate FET  
An improved FET for use as a voltage-controlled resistor includes a p-type control gate and a high-resistance connection to receive a control signal. The bootstrap frequency for the device is much...
6046480 Protection circuit for semiconductor devices  
An object is to realize a protection circuit for protecting a semiconductor device from an ESD or other surge, said protection circuit having its improved reliability with a reduced scale of...
6043538 Device structure for high voltage tolerant transistor on a 3.3 volt process  
An integrated circuit which includes a first transistor device portion having an N+ doped region drain terminal in an N- well in a P- substrate, an N+ doped region source terminal in the P-...
6037636 Electrostatic discharge protection circuit and method  
An electrostatic discharge (ESD) protection circuit for the output pads of an integrated circuit. The protection circuit includes an NMOS output transistor, an NMOS protection transistor and an...
6031270 Methods of protecting a semiconductor device  
The present invention includes differential devices and methods of protecting a semiconductor device. One aspect of the present invention provides a differential device adapted to be coupled to a...
6028338 Semiconductor integrated circuit device with electrostatic damage protection  
A semiconductor integrated circuit device has a peripheral transistor having a strengthened ESD resistance for external connection. The peripheral transistor has a channel structure effective to...
6015992 Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits  
A bistable SCR-like switch (41) protects a signal line (65) of an SOI integrated circuit (40) against damage from ESD events. The bistable SCR-like switch (41) is provided by a first and a second...
6008508 ESD Input protection using a floating gate neuron MOSFET as a tunable trigger element  
Disclosed is a floating gate neuron MOS transistor that may be incorporated into devices such as low voltage silicon control rectifiers for protection of internal circuits against electrostatic...
5977595 Apparatus and method for electrostatic discharge protection with improved current dispersion  
The present invention relates to an apparatus and method for protecting a semiconductor device, and more particularly to an n-type metal-oxide semiconductor (NMOS) transistor with a ladder...
5973359 MOS type semiconductor device  
A MOS type semiconductor device is provided which includes a series Zener diode array for overvoltage protection, which is provided between source regions and an electrode having substantially the...
5973358 SOI device having a channel with variable thickness  
A semiconductor device is provided by forming an insulating film on a supporting substrate and a semiconductor layer on the insulating film, forming an MOS semiconductor component having a source,...
Matches 301 - 350 out of 572 < 1 2 3 4 5 6 7 8 9 10 11 12 >