Matches 251 - 300 out of 572 < 1 2 3 4 5 6 7 8 9 10 11 12 >
Match Document Document Title
6476422 Electrostatic discharge protection circuit with silicon controlled rectifier characteristics  
An ESD protection circuit based on a modification of conventional silicon controlled rectifier (SCR) for preventing integrated circuits from ESD damage. A first N-well, which has a second N-type...
6472710 Field MOS transistor and semiconductor integrated circuit including the same  
A field MOS transistor having a high withstand voltage is disclosed. An island region of an epitaxial layer is surrounded by a heavily-doped isolation layer and a lightly-doped isolation layer...
6469354 Semiconductor device having a protective circuit  
A semiconductor device includes a protective circuit at an input/output port thereof, wherein the protective circuit includes a plurality of protective MOS transistors. A diffused region is...
6466423 Electrostatic discharge protection device for mixed voltage application  
A novel electrostatic discharge (ESD) protection device used for mixed voltage application is disclosed. A primary ESD device and a MOS transistor stack are respectively coupled to the input/output...
6462380 ESD protection circuit for advanced technologies  
A structure is designed with a lightly doped substrate ( 316 ) having a first conductivity type and a face. A first lightly doped region ( 314 ) has a second conductivity type and is formed within...
6462383 Semiconductor device with embedded protection element  
A semiconductor device includes an internal element and a protection element for protecting the internal element from entering static electricity. The both elements have the respective embedded...
6462384 Semiconductor device for ESD protection  
A semiconductor device for ESD protection is provided. The semiconductor device includes a plurality of transistors having a multi-fingered structure, a plurality of multilayer interconnections...
6462390 Multi-film capping layer for a salicide process  
A multi-film capping layer having a cobalt layer, a barrier layer, and a stuffing layer is disclosed, wherein the barrier layer isolates the cobalt layer from the stuffing layer. The multi-film...
6455897 Semiconductor device having electrostatic discharge protection circuit  
A semiconductor device, including an electrostatic discharge protection circuit capable of preventing current from being concentrated in a hot spot through a silicide layer, includes an N-type MOS...
6455898 Electrostatic discharge input protection for reducing input resistance  
An ESD protection structure for protecting an internal circuit comprising a primary protection device, a secondary protection device, and a substrate pickup is presented. The primary protection...
6448593 Type-1 polysilicon electrostatic discharge transistors  
The present invention provides a method and apparatus for providing a polysilicon type-1 ESD transistor in a flash memory chip. The method and apparatus include providing a select gate transistor...
6441437 Integrated semiconductor circuit with protective structure for protection against electrostatic discharge  
An integrated semiconductor circuit includes a protective structure for protection against electrostatic discharge. The protective structure is disposed between a terminal pad and the integrated...
6441460 Largely voltage-independent electrical resistor formed in an integrated semiconductor circuit  
An electrical resistor integrated in an integrated semiconductor circuit to have a useful resistor with two spaced-apart useful resistor terminal contact regions and a useful resistor region of...
6429505 SOI semiconductor controlled rectifier and diode for electrostatic discharge protection  
A diode (QN 1 ) is connected in parallel to one of two bipolar transistors (PB 1 , NB 1 ) constituting a semiconductor-controlled rectifier or SCR ( 400 ) in such a direction as to encourage...
6424013 Body-triggered ESD protection circuit  
A protection circuit is designed with an external terminal ( 300 ), a reference terminal ( 126 ) and a substrate ( 342 ). A semiconductor body ( 338 ) is formed by an isolation region ( 332, 340 )...
6420774 Low junction capacitance semiconductor structure and I/O buffer  
A low junction capacitance semiconductor structure and an I/O buffer are disclosed. The semiconductor structure includes a MOS transistor and a lightly doped region. The MOS transistor is formed in...
6417544 Diode-like plasma induced damage protection structure  
A novel structured for a diode-like PID protection (DLPP) device structure and process are described. An N-well, three associate N+ regions and a P+ region are formed on a P substrate. The DLPP is...
6414370 Semiconductor circuit preventing electromagnetic noise  
A semiconductor circuit or a semiconductor device has the current-voltage characteristic that, in a blocking-state of the semiconductor circuit or the semiconductor device, a current gently flows...
6404017 Protection circuit for semiconductor integrated circuit that can discriminate between program voltage and static electricity  
A current when static electricity intrudes is passed by a first circuit portion composed of a series circuit including a fuse element and a resistor until a program voltage is applied to a program...
6399991 Semiconductor integrated circuit  
In the guard ring section, four regions, p + diffusion region, n + diffusion region, n + diffusion region, and p + diffusion region, are formed to surround a hard macro and disposed in the...
6392860 Electrostatic discharge protection circuit with gate-modulated field-oxide device  
An ESD (electrostatic discharge) protection circuit employs a field oxide region between the drain region and the source region to break a surface channel between the drain region and the source...
6393603 Circuit design method calculating antenna size of conductive member connected to gate oxide film of transistor with approximate expression  
Antenna size of conductive members is calculated with respect to an area of a gate oxide film of a transistor using an expression which approximates an actual relationship of changes therein, not...
6388292 Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering  
A MOSFET structure uses angled poly-gate segments positioned between drain and source diffusion regions such that the entire continuous gate element structure is within the active region in a...
6384452 Electrostatic discharge protection device with monolithically formed resistor-capacitor portion  
A semiconductor device comprising a silicon-on-insulator (SOI) substrate including a base substrate, an insulator layer, and a silicon layer, a trench capacitor including at least one trench formed...
6376881 Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor  
A semiconductor device according to the invention of the present application comprises a first semiconductor layer, a first insulating layer formed over the first semiconductor layer, a second...
6373104 Circuit method for reducing parasitic bipolar effects during electrostatic discharges  
A semiconductor device include a current source having a first node coupled to a first voltage reference node, and a second node for extracting a current in response to an electrostatic discharge...
6373105 Latch-up protection circuit for integrated circuits biased with multiple power supplies  
A latch-up protection circuit is integrated with a CMOS circuitry, which is powered by a first voltage and a second voltage via a first power rail and a second power rail, respectively, on a...
6369427 Integrated circuitry, interface circuit of an integrated circuit device, and cascode circuitry  
The present invention includes integrated circuitry, an interface circuit of an integrated circuit device, cascode circuitry, method of protecting an integrated circuit, method of operating...
6365938 Integrated circuit devices that use antiparallel diodes to reduce damage during plasma processing  
An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line...
6355959 Gate electrode controllable electrostatic discharge (ESD) protection structure having a MOSFET with source and drain regions in separate wells  
An ESD protection structure for use with ICs that can protect from ESD events of both positive and negative polarities, has a low snapback holding voltage and a high maximum snapback current, and...
6353247 High voltage electrostatic discharge protection circuit  
A high voltage electrostatic discharge protection circuit having a virtual N + region additionally formed according to the invention is disclosed. Due to the formation of the virtual N + region,...
6353237 ESD protection circuit triggered by diode  
The present invention provides an ESD protection circuit having at least one semiconductor-controlled rectifier and a diode. The SCR having a floating anode gate is connected between a first...
6348716 Horizontal MOS gate type semiconductor device including zener diode and manufacturing method thereof  
A lateral MOS gate semiconductor device including Zener diodes has a structure in which the Zener diodes are integrated within the device. The Zener diodes are connected in parallel to a parasitic...
6339236 Light responsive semiconductor switch with shorted load protection  
An improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load overcurrent. The switch is includes an output transistor which is...
6331726 SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry  
A ballasting resistor incorporating therein an H-shaped gate structure reduces a current therethrough by utilizing a pinching effect. The ballasting resistor is formed on a silicon-on-insulator...
6329694 Semiconductor device with ESD protective circuit  
A semiconductor device with an electrostatic discharge (ESD) protective circuit is disclosed. In this semiconductor device with an ESD protective circuit, an n-well guard ring is formed around an...
6320229 Semiconductor device  
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage...
6313509 Semiconductor device and a MOS transistor for circuit protection  
A semiconductor device including an input protective circuit. A first transistor has a gate formed on the semiconductor substrate and a first and second conductive region is formed on each side of...
6310380 Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers  
A MOS transistor structure is provided for ESD protection in an integrated circuit device. A trench controls salicide deposition to prevent hot spot formation and allows control of the turn-on...
6306695 Modified source side inserted anti-type diffusion ESD protection device  
An ESD protection circuit that will prevent internal circuits of an integrated circuit is formed on a semiconductor substrate to prevent damage during extreme voltage levels from an ESD voltage...
6288428 Semiconductor integrated circuit device for disk drive apparatus  
A semiconductor integrated circuit device for a magnetic drive apparatus has a driver for supplying an electric current to a motor including an inductance coil, a pad for receiving or outputting a...
6278157 Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements  
The present invention is an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by expanding a stack...
6274908 Semiconductor device having input-output protection circuit  
A semiconductor device having a SOI structure in which an ESD resistance can be enhanced is obtained. The semiconductor device comprises PMOS transistors Q21 and Q22 which are brought into a...
6274911 CMOS device with deep current path for ESD protection  
In this invention a current block is implanted into the drain of a transistor to provide for ESD protection and allow the shrinking of the transistor. The block increases the current path into the...
6268992 Displacement current trigger SCR  
Circuits, device structures and methods are disclosed which protect CMOS semiconductor devices, having oxides as thin as 32 Angstrom, from electrostatic discharge (ESD) by utilizing a parasitic...
6265756 Electrostatic discharge protection device  
An electrostatic discharge protection device for reducing electrostatic discharge spikes on a signal line is disclosed. The electrostatic discharge protection device includes first and second...
6259140 Silicide blocking process to form non-silicided regions on MOS devices  
A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of silicide...
6255696 Retrograde ESD protection apparatus  
A retrograde ESD (electrostatic discharge) protection apparatus is disclosed. In a MOSFET (metal-oxide-semiconductor field effect transistor) having a source region, a drain region, a gate region,...
6236073 Electrostatic discharge device  
An electrostatic discharge protective circuit formed on a substrate is described. A gate electrode is formed over the substrate. A drain region is formed in the substrate at one side of the gate...
6236094 Low resistance gate electrodes  
Provided is a transistor device, and a process for fabricating such a device, in which a top portion of a polysilicon gate electrode is removed and replaced by a low resistance metal material using...
Matches 251 - 300 out of 572 < 1 2 3 4 5 6 7 8 9 10 11 12 >