Match Document Document Title
6393603 Circuit design method calculating antenna size of conductive member connected to gate oxide film of transistor with approximate expression  
Antenna size of conductive members is calculated with respect to an area of a gate oxide film of a transistor using an expression which approximates an actual relationship of changes therein, not...
6392860 Electrostatic discharge protection circuit with gate-modulated field-oxide device  
An ESD (electrostatic discharge) protection circuit employs a field oxide region between the drain region and the source region to break a surface channel between the drain region and the source...
6388292 Distributed MOSFET structure with enclosed gate for improved transistor size/layout area ratio and uniform ESD triggering  
A MOSFET structure uses angled poly-gate segments positioned between drain and source diffusion regions such that the entire continuous gate element structure is within the active region in a...
6384452 Electrostatic discharge protection device with monolithically formed resistor-capacitor portion  
A semiconductor device comprising a silicon-on-insulator (SOI) substrate including a base substrate, an insulator layer, and a silicon layer, a trench capacitor including at least one trench...
6376881 Protective element formed in an SOI substrate for preventing a breakdown in an oxide film located below a diffused resistor  
A semiconductor device according to the invention of the present application comprises a first semiconductor layer, a first insulating layer formed over the first semiconductor layer, a second...
6373105 Latch-up protection circuit for integrated circuits biased with multiple power supplies  
A latch-up protection circuit is integrated with a CMOS circuitry, which is powered by a first voltage and a second voltage via a first power rail and a second power rail, respectively, on a...
6373104 Circuit method for reducing parasitic bipolar effects during electrostatic discharges  
A semiconductor device include a current source having a first node coupled to a first voltage reference node, and a second node for extracting a current in response to an electrostatic discharge...
6369427 Integrated circuitry, interface circuit of an integrated circuit device, and cascode circuitry  
The present invention includes integrated circuitry, an interface circuit of an integrated circuit device, cascode circuitry, method of protecting an integrated circuit, method of operating...
6365938 Integrated circuit devices that use antiparallel diodes to reduce damage during plasma processing  
An integrated circuit includes first and second diodes that are electrically connected to a conductive line in antiparallel, to dissipate both positive and negative charges on the conductive line...
6355959 Gate electrode controllable electrostatic discharge (ESD) protection structure having a MOSFET with source and drain regions in separate wells  
An ESD protection structure for use with ICs that can protect from ESD events of both positive and negative polarities, has a low snapback holding voltage and a high maximum snapback current, and...
6353237 ESD protection circuit triggered by diode  
The present invention provides an ESD protection circuit having at least one semiconductor-controlled rectifier and a diode. The SCR having a floating anode gate is connected between a first...
6353247 High voltage electrostatic discharge protection circuit  
A high voltage electrostatic discharge protection circuit having a virtual N+ region additionally formed according to the invention is disclosed. Due to the formation of the virtual N+ region, the...
6348716 Horizontal MOS gate type semiconductor device including zener diode and manufacturing method thereof  
A lateral MOS gate semiconductor device including Zener diodes has a structure in which the Zener diodes are integrated within the device. The Zener diodes are connected in parallel to a parasitic...
6339236 Light responsive semiconductor switch with shorted load protection  
An improved light responsive semiconductor switch with shorted load protection capable of successfully interrupting a load overcurrent. The switch is includes an output transistor which is...
6331726 SOI voltage dependent negative-saturation-resistance resistor ballasting element for ESD protection of receivers and driver circuitry  
A ballasting resistor incorporating therein an H-shaped gate structure reduces a current therethrough by utilizing a pinching effect. The ballasting resistor is formed on a silicon-on-insulator...
6329694 Semiconductor device with ESD protective circuit  
A semiconductor device with an electrostatic discharge (ESD) protective circuit is disclosed. In this semiconductor device with an ESD protective circuit, an n-well guard ring is formed around an...
6320229 Semiconductor device  
In a semiconductor substrate of a first conductivity type, first and second high-concentration layers of a second conductivity type are formed in spaced relation to each other. A reference voltage...
6313509 Semiconductor device and a MOS transistor for circuit protection  
A semiconductor device including an input protective circuit. A first transistor has a gate formed on the semiconductor substrate and a first and second conductive region is formed on each side of...
6310380 Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers  
A MOS transistor structure is provided for ESD protection in an integrated circuit device. A trench controls salicide deposition to prevent hot spot formation and allows control of the turn-on...
6308312 System and method for controlling leakage current in an integrated circuit using current limiting devices  
A circuit 10 is provided that comprises a source resistance transistor 12 connected to a common node 14. A word line driver circuit 18 receives current if it is the word line driver selected from...
6288428 Semiconductor integrated circuit device for disk drive apparatus  
A semiconductor integrated circuit device for a magnetic drive apparatus has a driver for supplying an electric current to a motor including an inductance coil, a pad for receiving or outputting a...
6278157 Method and apparatus for elimination of parasitic bipolar action in logic circuits including complementary oxide semiconductor (CMOS) silicon on insulator (SOI) elements  
The present invention is an apparatus and method to overcome the unwanted effects of parasitic bipolar discharge in silicon-on-insulator (SOI) field effect transistors (FET) by expanding a stack...
6274911 CMOS device with deep current path for ESD protection  
In this invention a current block is implanted into the drain of a transistor to provide for ESD protection and allow the shrinking of the transistor. The block increases the current path into the...
6274908 Semiconductor device having input-output protection circuit  
A semiconductor device having a SOI structure in which an ESD resistance can be enhanced is obtained. The semiconductor device comprises PMOS transistors Q21 and Q22 which are brought into a...
6268992 Displacement current trigger SCR  
Circuits, device structures and methods are disclosed which protect CMOS semiconductor devices, having oxides as thin as 32 Angstrom, from electrostatic discharge (ESD) by utilizing a parasitic...
6265756 Electrostatic discharge protection device  
An electrostatic discharge protection device for reducing electrostatic discharge spikes on a signal line is disclosed. The electrostatic discharge protection device includes first and second...
6259140 Silicide blocking process to form non-silicided regions on MOS devices  
A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of...
6255696 Retrograde ESD protection apparatus  
A retrograde ESD (electrostatic discharge) protection apparatus is disclosed. In a MOSFET (metal-oxide-semiconductor field effect transistor) having a source region, a drain region, a gate region,...
6236094 Low resistance gate electrodes  
Provided is a transistor device, and a process for fabricating such a device, in which a top portion of a polysilicon gate electrode is removed and replaced by a low resistance metal material...
6236088 Semiconductor device gate structure for thermal overload protection  
An arrangement for providing thermal overload protection for a gated electrode power semiconductor device comprises connecting the gate electrode of the device in a series circuit between the gate...
6236073 Electrostatic discharge device  
An electrostatic discharge protective circuit formed on a substrate is described. A gate electrode is formed over the substrate. A drain region is formed in the substrate at one side of the gate...
6229183 ESD damage immunity buffer  
The present invention discloses an ESD damage immunity buffer, comprising: a gate, a first doped region, a second doped region, a third doped region, and a resist layer. The ESD damage immunity...
6229182 Semiconductor device having protection against electrostatic discharge  
To improve the robustness of a protection against ESD, a transistor structure is proposed in which breakdown does not occur at the surface of the silicon body but in the bulk of the silicon at a...
6222236 Protection circuit and method for protecting a semiconductor device  
An electrostatic discharge (ESD) protection circuit (20) includes an active load circuit (22) connected to a Laterally Diffused Metal Oxide Semiconductor (LDMOS) transistor (21) having a Lightly...
6222237 Structure of electrostatic discharge protection device  
A structure of an ESD protection device located between a pad and an internal circuit. The structure comprises a transistor with a source and a drain connecting to the ground, and an N+ resistor...
6218705 Semiconductor device having protective element to conduct current to substrate  
A semiconductor device includes a protective element which is formed on a semiconductor substrate and conducts current to the semiconductor substrate at a voltage lower than the breakdown voltage...
6218706 Integrated circuit with improved electrostatic discharge protection circuitry  
An MOS integrated circuit device with improved electrostatic protection capability includes high and low voltage rails for bringing externally-supplied power to points within the chip. Input...
6215156 Electrostatic discharge protection device with resistive drain structure  
A transistor formed in a semiconductor substrate having improved ESD protection. The transistor includes a gate structure formed atop of a semiconductor substrate. First and second sidewall...
6207997 Thin film transistor for antistatic circuit and method for fabricating the same  
A thin film transistor for an antistatic circuit includes: wells formed on a silicon substrate; insulating layers for electrical isolation between electrodes formed within the wells; low density...
6207996 Semiconductor device and method for manufacturing the same  
A semiconductor device is provided without degrading the performance of an internal circuit, which has an SOI structure coexistingly having an SOI static electricity protection circuit to prevent...
6204537 ESD protection scheme  
An integrated circuit device is provided comprising an integrated circuit pad, an internal integrated circuit, and an ESD protection circuit. The internal integrated circuit is conductively...
6198135 Semiconductor device having electrostatic discharge protection element and manufacturing method thereof  
A semiconductor device having an ESD protection element with an improved ESD resistance is obtainable even if it is formed on the same substrate together with an internal circuit. An SiGe--P well...
6194764 Integrated semiconductor circuit with protection structure for protecting against electrostatic discharge  
An integrated semiconductor circuit has a protection structure for protecting against electrostatic discharge. The protection element has at least one integrated vertical protection transistor,...
6191454 Protective resistance element for a semiconductor device  
A semiconductor device includes a transistor and a protective resistance element. The transistor has first and second impurity regions of a first conductivity type formed on a surface of a...
6175394 Capacitively coupled field effect transistors for electrostatic discharge protection in flat panel displays  
A flat panel display includes a plurality of parallel row select lines and a plurality of column drive lines, with the row select lines and the column drive lines intersecting to define a matrix...
6172404 Tuneable holding voltage SCR ESD protection  
An SCR provides for increased holding voltage by decoupling the pnp and npn parasitic bipolar transistors of the SCR. In one embodiment, a N+ region is placed between the n+ region and the p+...
6172378 Integrated circuit varactor having a wide capacitance range  
Integrated circuit varactor structures that include either an P-gate/N-well or N-gate/P-well layer configuration formed on an SOI substrate. The varactor structure is completely electrically...
6169312 Static protection circuit for use in a semiconductor integrated circuit device  
A static protection circuit has a first MOS transistor of a P-channel type whose source-drain channel is connected between a signal line leading to an external connection terminal and ground; it...
6163056 Semiconductor device having electrostatic discharge  
A semiconductor device includes a semiconductor substrate having a major surface, a source region of a second conductivity type, a drain region of the second conductivity type, and a first...
6157066 Semiconductor aggregate substrate and semiconductor device with fuse structure to prevent breakdown  
Electrostatic breakdown is avoided during fabrication of individual semiconductor devices using a semiconductor aggregate substrate. The semiconductor aggregate substrate is comprised of a large...