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7598575 |
Semiconductor die with reduced RF attenuation
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
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7582938 |
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
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7521761 |
Variable layout structure for producing CMOS circuit
A layout structure for a CMOS circuit comprises a transistor layer forming P-type transistors 11 and 21 and N-type transistors 12 and 22, and a resistor layer which includes a resistor 13 ...
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7514713 |
Liquid crystal display panel
A liquid crystal display panel including an active device array substrate, a second substrate, a sealant, and a liquid crystal layer is provided. The active device array substrate has a display...
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7511345 |
Bulk resistance control technique
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region...
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7492012 |
Light emitting device and method of manufacturing the same
A light emitting device is provided which has a structure for preventing degradation of a light emitting element due to water and oxygen contained in an interlayer insulating film formed between a...
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7485933 |
Semiconductor integrated circuit device having polycrystalline silicon resistor circuit
A semiconductor device has a first insulating film formed on a semiconductor substrate and resistors disposed on the first insulating film. Each of the resistors is formed of a polycrystalline...
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7479666 |
Driving circuit of a liquid crystal display panel
A driving circuit of a liquid crystal display panel includes a substrate, a plurality of driver IC chips located on the substrate, a current supplier, and a first conductive wire set. The first...
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7459793 |
Methods for forming contact hole, for manufacturing circuit board and for manufacturing electro-optical device
A method for forming a contact hole, a method for manufacturing a circuit board and a method for manufacturing an electro-optical device that increase the reliability of electrical coupling via a...
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7456478 |
MOS transistor circuit
A reduction of a current capability of a MOS transistor (P 1 ) is compensated by dynamically changing a substrate bias of the MOS transistor (P 1 ) in response to a fluctuation of the power supply,...
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7408225 |
Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the...
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7402846 |
Electrostatic discharge (ESD) protection structure and a circuit using the same
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
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7394134 |
Semiconductor device with electrostatic discharge protection
A semiconductor device is provided having a high performance resistance element. In an N-type well isolated by an insulating film, two higher concentration N-type regions are formed. An interlayer...
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7365397 |
Semiconductor device
The semiconductor device comprises a resistance element 26 formed of polysilicon film formed on a silicon substrate 10 , which includes a resistor part 26 a having a resistance value set at a...
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7361957 |
Device for electrostatic discharge protection and method of manufacturing the same
The present invention relates to a device for electrostatic discharge protection (ESD). According to an embodiment of the present invention, a device for electrostatic discharge protection includes...
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7355250 |
Electrostatic discharge device with controllable holding current
An electrostatic discharge (ESD) device with a parasitic silicon controlled rectifier (SCR) structure and controllable holding current is provided. A first distance is kept between a first N+ doped...
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7326999 |
Chip resistor and method for manufacturing same
A chip resistor (R 1 ) includes a resistor element ( 1 ) having a first surface ( 1 a ) and a second surface ( 1 b ) opposite to the first surface. Two main electrodes ( 21 ), spaced from each...
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7323751 |
Thin film resistor integration in a dual damascene structure
A thin film resistor and at least one metal interconnect are formed in an integrated circuit. A first dielectric layer is formed over a metal interconnect layer. A thin film resistor is formed on...
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7312515 |
Semiconductor apparatus including a thin-metal-film resistor element and a method of manufacturing the same
A semiconductor apparatus includes a wiring pattern, an insulating film, and a thin-metal-film resistor element. The insulating film is formed on the wiring pattern having connection holes...
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7298010 |
Radiation-hardened transistor and integrated circuit
A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking...
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7294875 |
Nanoscale programmable structures and methods of forming and using same
A programmable structure and device and methods of forming and using the structure and device are disclosed. The structure includes a soluble electrode, an ion conductor, and an inert electrode....
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7282769 |
Thin film transistor device and method of making the same
The electronic device comprises a thin-film transistor ( 10 ) and can be obtained from two substrates ( 1, 11 ). In order to preclude delamination at a non-adhesive interface between a metal...
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7276767 |
Thin film resistor device and a method of manufacture therefor
The present invention provides a thin film resistor and method of manufacture therefor. The thin film resistor comprises a resistive layer located on a first dielectric layer, first and second...
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7274047 |
Silicon controlled rectifier electrostatic discharge protection device for power supply lines with powerdown mode of operation
An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection circuit includes a silicon controlled rectifier (SCR)...
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7250660 |
ESD protection that supports LVDS and OCT
Circuits are described that provide electrostatic discharge protection for I/O circuits that support the low voltage differential signaling (LVDS) and on-chip termination (OCT) standards. At least...
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7235846 |
ESD protection structure with SiGe BJT devices
The present invention provides an ESD protection device or structure that exploits the high conductivity of a heavily doped heterojunction base of a standard SiGe bipolar junction transistor (BJT)...
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7221026 |
Computer systems containing resistors which include doped silicon/germanium
The invention includes semiconductor constructions having a thin film stacked resistor in electrical connection with a source/drain region of a transistor device. The resistor includes first and...
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7211868 |
Protection circuit device using MOSFETs and a method of manufacturing the same
A protection circuit device using a MOSFET has a plural of conductive paths separated electrically, a MOSFET chip integrating two power MOSFETs in one chip where a gate electrode and a source...
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7208814 |
Resistive device and method for its production
A resistive device includes a resistive region of a semiconductor material that includes a first region and a second region, wherein the first region has a higher dopant concentration than the...
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7205612 |
Fully silicided NMOS device for electrostatic discharge protection
A device and method are described for forming a grounded gate NMOS (GGNMOS) device used to provide protection against electrostatic discharge (ESD) in an integrated circuit (IC). The device is...
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7202165 |
Electronic device having a stacked wiring layer including Al and Ti
In the case that a stacked layer, in which another metal layer is stacked on an Al layer or Al alloy layer having a low resistance, is used as a wiring material, an etchant is provided which can...
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7196377 |
MOS type semiconductor device having electrostatic discharge protection arrangement
In a semiconductor device having an electrostatic discharge protection arrangement, a semiconductor substrate exhibits a first conductivity type. First and second impurity regions each exhibiting a...
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7176489 |
Thin-film transistor and method of making same
A thin-film transistor includes a substrate, and a gate including a double-layered structure having first and second metal layers provided on the substrate, the first metal layer being wider than...
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7148556 |
High performance diode-implanted voltage-controlled poly resistors for mixed-signal and RF applications
A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes...
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7145204 |
Guardwall structures for ESD protection
A semiconductor circuit for protecting an I/O pad against ESD events comprising a pMOS transistor ( 510 ) in a first n-well ( 511 ) having its source connected to Vdd and the first n-well, and its...
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7112867 |
Resistive isolation between a body and a body contact
A high resistance region may be used to isolate the body of a first transistor from a body contact.
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7102198 |
Organic electroluminescent display device
An organic electroluminescent display device includes a first substrate, a second substrate spaced apart and facing the first substrate, a switching thin film transistor disposed on an inner...
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7098522 |
High voltage device with ESD protection
A high voltage device. A high voltage MOS transistor is applied in the ESD protection device to the structure of which a doped region is added, generating a parasitic semiconductor controlled...
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7098509 |
High energy ESD structure and method
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled...
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7061052 |
Input protection circuit connected to protection circuit power source potential line
An input protection circuit capable of precisely bypassing a surge current to a power source terminal and protecting the gate of a protective transistor from an electrostatic surge. The input...
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7020857 |
Method and apparatus for providing noise suppression in a integrated circuit
A method and apparatus for analyzing an integrated circuit design for pnpn structures which are likely to latchup or cause injection of noise into the substrate. Once qualifying pnpn structures are...
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7002219 |
Electrical fuse for integrated circuits
An electrically programmable fuse includes a metal-oxide-semiconductor (MOS) programmable transistor that is gate-source coupled by a resistive element. The resistive element can comprise a...
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6995432 |
Semiconductor device having a gate oxide film with some NTFTS with LDD regions and no PTFTS with LDD regions
A MIS type semiconductor device and a method for fabricating the same characterized in that impurity regions are selectively formed on a semiconductor substrate or semiconductor thin film and are...
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6992651 |
Signal dividing circuit and semiconductor device
To provide a constitution capable of reducing production cost in a semiconductor device for display of a type integrally formed with a drive circuit with a digital signal as an input signal and a...
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6963111 |
Efficient pMOS ESD protection circuit
A pMOS transistor ( 601 ) is located in an n-well ( 602 ) and has at least one gate ( 603 ). Transistor ( 601 ) is connected between power pad Vdd or I/O pad ( 604 ) and ground potential Vss ( 605...
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6921962 |
Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer
A thin film resistor ( 60 ) is contained between two metal interconnect layers ( 40, 100 ) of an integrated circuit. Contact may be made to the resistor ( 60 ) through vias ( 95 ) from the metal...
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6909117 |
Semiconductor display device and manufacturing method thereof
A semiconductor display device which includes the polycrystalline silicon TFTs is constructed by a pixel region and a peripheral circuit and TFT characteristics required for each circuit are...
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6873028 |
Surge current chip resistor
A chip resistor comprising a substrate having opposite parallel symmetrical first and second surfaces, a central longitudinal plane of symmetry, separate and spaced first and second resistive...
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6858902 |
Efficient ESD protection with application for low capacitance I/O pads
A semiconductor device for ESD protection of an input/output pad ( 301 ) of an integrated circuit built in a substrate of a first conductivity type comprising a multi-finger MOS transistor ( 304 ),...
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6858900 |
ESD protection devices and methods to reduce trigger voltage
ESD protection devices and methods of forming them are provided in this invention. By employing the thin gate oxide fabricated by a dual gate oxide process and breakdown-enhanced layers, ESD...
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