Matches 1 - 50 out of 181 1 2 3 4 >

CobaltIP-faceted-search-demo
Match Document Document Title
8178926 Thin film field effect transistor and display  
A thin film field effect transistor including, on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein an electric...
8174078 Flat-panel display semiconductor process for efficient manufacturing  
An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process....
8148771 Semiconductor device and method to manufacture thereof  
A semiconductor device 100 includes a semiconductor substrate 14, a connection electrode 12 disposed on an upper surface of the semiconductor substrate 14 and connected to an integrated circuit...
8148722 Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer  
Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a...
8143674 Semiconductor devices having resistors  
A semiconductor device having a resistor and a method of fabricating the same are provided. The semiconductor device includes a semiconductor substrate having a first circuit region and a second...
8125032 Modified hybrid orientation technology  
A semiconductor process and apparatus includes forming first and second metal gate electrodes (151, 161) over a hybrid substrate (17) by forming the first gate electrode (151) over a first high-k...
8093585 Organic electro-luminescent display apparatus  
Each TFT for driving each of a plurality of pixels arranged in a matrix-like configuration is configured using a stagger-type polycrystalline-Si TFT. A gate electrode, which is composed of a...
8084830 Nonvolatile semiconductor memory device  
The memory cell is located at respective intersections between the first wirings and the second wirings. Each of the memory cells has a rectifier element and a variable resistance element connected...
8084842 Thermally stabilized electrode structure  
Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure...
8072030 Semiconductor device  
A semiconductor device, which is connected to a protected device and protects a protected device, includes a semiconductor layer provided on an insulating film; a plurality of source layers which...
8018060 Post passivation interconnection process and structures  
A system and method for forming post passivation metal structures is described. Metal interconnections and high quality electrical components, such as inductors, transformers, capacitors, or...
8013394 Integrated circuit having resistor between BEOL interconnect and FEOL structure and related method  
Integrated circuits (IC) and a method of fabricating an IC, where the structure of the IC incorporates a back-end-of-the-line (BEOL) thin film resistor below a first metal layer to achieve lower...
7994579 Thin film field-effect transistor and display using the same  
The present invention provides a thin film field-effect transistor comprising a substrate having thereon at least a gate electrode, a gate insulating film, an active layer, a source electrode, and...
7964469 Method of manufacturing semiconductor device having resistor formed of a polycrystalline silicon film  
In a method of manufacturing a semiconductor device, a first oxide film is formed in a convex shape on a field insulating film, a polycrystalline silicon film is formed on the first oxide film, and...
7952173 Nanometric device with a hosting structure of nanometric elements  
A nanometric device comprising a substrate; a plurality of conductive spacers of a conductive material, each conductive spacer being arranged on top of and transverse to the substrate, the...
7939888 Display device and television device using the same  
The invention provides a display device and a method for manufacturing thereof by increasing a material efficiently as well as simplifying steps. Also, the invention provides a technique for...
7919818 Semiconductor device  
A semiconductor device includes a principal IGBT controllable in accordance with a gate voltage applied to a gate electrode thereof, a current detecting IGBT connected to the principal IGBT in...
7880235 Semiconductor integrated circuit device  
A semiconductor integrated circuit device has an SOI substrate comprising an insulating film laminated on a semiconductor support substrate and a semiconductor thin film laminated on the insulating...
7880206 CMOS image sensor with asymmetric well structure of source follower  
Provided is a CMOS image sensor with an asymmetric well structure of a source follower. The CMOS image sensor includes: a well disposed in an active region of a substrate; a drive transistor having...
7876596 Memory element and method for manufacturing same  
A novel nonvolatile memory element, which can be manufactured by a simple and high yield process by using an organic material and has a high on/off ratio, and a method for manufacturing such...
7855112 Fabrication method of pixel structure  
A fabrication method of a pixel structure includes providing a substrate. A semiconductor layer and a first conductive layer are formed on the substrate in sequence and patterned to form a...
7851863 Static electricity countermeasure component  
A static electricity countermeasure component comprising; a ceramic substrate; at least two extractor electrodes opposingly disposed and mutually separated on the ceramic substrate; an over-voltage...
7825476 Method of fabricating polycrystalline silicon, TFT fabricated using the same, method of fabricating the TFT, and organic light emitting diode display device including the TFT  
A method of fabricating a polycrystalline silicon (poly-Si) layer includes providing a substrate, forming an amorphous silicon (a-Si) layer on the substrate, forming a thermal oxide layer to a...
7808048 System and method for providing a buried thin film resistor having end caps defined by a dielectric mask  
A buried thin film resistor having end caps defined by a dielectric mask is disclosed. A thin film resistor is formed on an integrated circuit substrate. A resistor protect layer is formed over the...
7804151 Integrated circuit structure, design structure, and method having improved isolation and harmonics  
Disclosed are embodiments of a semiconductor structure, a design structure for the semiconductor structure and a method of forming the semiconductor structure. The embodiments reduce harmonics and...
7800114 Semiconductor device and manufacturing method thereof  
Manufacture of TFTs corresponding to various circuits makes structures thereof complex, which involves a larger number of manufacturing steps. Such an increase in the number of the manufacturing...
7795685 Method of manufacturing a thin film transistor substrate and stripping composition  
A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a...
7795701 Semiconductor device and manufacturing method thereof  
A first insulation film is provided on a semiconductor substrate. A high resistance element formed from polysilicon is provided on the first insulation film. A second insulation film is provided on...
7763942 Pixel structure  
A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process....
7750407 Strapping contact for charge protection  
A semiconductor device includes a substrate and a memory cell formed on the substrate. The memory cell includes a word line. The semiconductor device also includes a protection area formed in the...
7746608 Methodology to guard ESD protection circuits against precharge effects  
An ESD protection circuit (710) is guarded by a parallel first precharge elimination circuit (720) relative to an I/O pad (721) and a parallel second precharge elimination circuit (730) relative to...
7709862 Ion implantation mask and method for manufacturing same, silicon carbide semiconductor device using ion implantation mask, and method for manufacturing same  
A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate;...
7705419 Fuse box of semiconductor device formed using conductive oxide layer and method for forming the same  
A fuse box of a semiconductor device includes a plurality of metal fuses formed on a first interlayer dielectric of a semiconductor substrate and previously removed in blowing regions thereof; a...
7701134 Active matrix display device with improved operating performance  
An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure,...
7687862 Semiconductor devices with active regions of different heights  
Semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a semiconductor device includes a first transistor having a first active area, and a second transistor...
7667245 Driving circuit of a liquid crystal display panel  
A driving circuit of a liquid crystal display panel includes a substrate, a plurality of driver IC chips located on the substrate, a current supplier, and a first conductive wire set. The first...
7646067 Complementary metal-oxide-semiconductor transistor including multiple gate conductive layers and method of manufacturing the same  
A CMOS transistor and a method of manufacturing the CMOS transistor are disclosed. An NMOS transistor is formed on a first region of a semiconductor substrate. A PMOS transistor is formed on a...
7638847 ESD protection structure  
An ESD protection structure includes, in part, a NMOS transistor having a source and drain in a well in a substrate and a gate on the substrate with the source and drain being connected between...
7615775 Semiconductor apparatus and process for fabricating same  
A semiconductor apparatus in which a conducting path formed from organic semiconductor molecules as a material has a novel structure and exhibits high mobility, and a manufacturing method for...
7598575 Semiconductor die with reduced RF attenuation  
The attenuation of an RF signal on a metal trace in a semiconductor die is substantially reduced by utilizing a number of RF blocking structures that lie on the surface of the substrate directly...
7582938 I/O and power ESD protection circuits by enhancing substrate-bias in deep-submicron CMOS process  
A technique to enhancing substrate bias of grounded-gate NMOS fingers (ggNMOSFET's) has been developed. By using this technique, lower triggering voltage of NMOS fingers can be achieved without...
7521761 Variable layout structure for producing CMOS circuit  
A layout structure for a CMOS circuit comprises a transistor layer forming P-type transistors 11 and 21 and N-type transistors 12 and 22, and a resistor layer which includes a resistor 13 formed to...
7514713 Liquid crystal display panel  
A liquid crystal display panel including an active device array substrate, a second substrate, a sealant, and a liquid crystal layer is provided. The active device array substrate has a display...
7511345 Bulk resistance control technique  
The present invention provides a MOS transistor device for providing ESD protection including at least one interleaved finger having a source, drain and gate region formed over a channel region...
7485933 Semiconductor integrated circuit device having polycrystalline silicon resistor circuit  
A semiconductor device has a first insulating film formed on a semiconductor substrate and resistors disposed on the first insulating film. Each of the resistors is formed of a polycrystalline...
7459754 Semiconductor device having ESD protection circuit with time delay  
Provided is a semiconductor device in which a resistor and a capacitor are inserted in an input/output signal line that connects an input/output pad and an internal circuit at an input/output...
7459793 Methods for forming contact hole, for manufacturing circuit board and for manufacturing electro-optical device  
A method for forming a contact hole, a method for manufacturing a circuit board and a method for manufacturing an electro-optical device that increase the reliability of electrical coupling via a...
7456478 MOS transistor circuit  
A reduction of a current capability of a MOS transistor (P1) is compensated by dynamically changing a substrate bias of the MOS transistor (P1) in response to a fluctuation of the power supply, and...
7408225 Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms  
A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the...
7402846 Electrostatic discharge (ESD) protection structure and a circuit using the same  
An electrostatic discharge (ESD) protection structure is disclosed. The ESD protection structure includes an active device. The active device includes a plurality of drains. Each of the drains has...
Matches 1 - 50 out of 181 1 2 3 4 >